FDD6N50 / FDU6N50 — N-Channel UniFETTM MOSFET
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2
Package Marking and Ordering Information
Electrical Characteristics TC = 25°C unless otherwise noted.
Notes:
1. Repetitive rating: pulse-width limited by maximum junction temperature.
2. IAS = 6 A, VDD = 50 V, L=13.5 mH, RG = 25 Ω, starting TJ = 25°C.
3. ISD ≤ 6 A, di/dt ≤ 200 A/µs, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
Part Number Top Mark Package Packing Method Reel Size Tape Width Quantity
FDD6N50TM FDD6N50 DPAK Tape and Reel 330 mm 16 mm 2500 units
FDD6N50TM-WS FDD6N50S DPAK Tape and Reel 330 mm 16 mm 2500 units
FDU6N50TU FDU6N50 IPAK Tube N/A N/A 75 units
Symbol Parameter Conditions Min. Typ. Max Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 500 -- -- V
∆BVDSS
/ ∆TJ
Breakdown Voltage Temperature
Coefficient ID = 250 µA, Referenced to 25°C--0.5--V/°C
IDSS Zero Gate Voltage Drain Current VDS = 500 V, VGS = 0 V
VDS = 400 V, TC = 125°C
--
--
--
--
1
10
µA
µA
IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA
IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA
On Characteristics
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA3.0--5.0V
RDS(on) Static Drain-Source
On-Resistance VGS = 10 V, ID = 3 A -- 0.76 0.9 Ω
gFS Forward Transconductance VDS = 40 V, ID = 3 A -- 2.5 -- S
Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 720 940 pF
Coss Output Capacitance -- 95 190 pF
Crss Reverse Transfer Capacitance -- 9 13.5 pF
Switching Characteristics
td(on) Turn-On Delay Time VDD = 250 V, ID = 6 A,
VGS = 10 V, RG = 25 Ω
(Note 4)
-- 6 20 ns
trTurn-On Rise Time -- 55 120 ns
td(off) Turn-Off Delay Time -- 25 60 ns
tfTurn-Off Fall Time -- 35 80 ns
QgTotal Gate Charge VDS = 400 V, ID = 6 A,
VGS = 10 V
(Note 4)
-- 12.8 16.6 nC
Qgs Gate-Source Charge -- 3.7 -- nC
Qgd Gate-Drain Charge -- 5.8 -- nC
Drain-Source Diode Characteristics and Maximum Ratings
ISMaximum Continuous Drain-Source Diode Forward Current -- -- 6 A
ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 24 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A -- -- 1.4 V
trr Reverse Recovery Time VGS = 0 V, IS = 6 A,
dIF/dt =100 A/µs
-- 275 -- ns
Qrr Reverse Recovery Charge -- 1.7 -- µC