0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
1
General Description
The AP2822 is an integrated high-side power switch
that consists of N-Channel MOSFET, charge pump,
over current & temperature and other related protection
circuits. The switch’s low RDS(ON), 85m, is designed
to meet USB voltage drop requirements. The IC
includes soft-start to limit inrush current, over-current
protection, load short protection with fold-back, and
thermal shutdown to avoid switch failure during hot
plug-in. Under voltage lockout (UVLO) function is
used to ensure the device remain off unless there is a
valid input voltage present. A FLAG output is
available to indicate fault conditions to the local USB
controller.
The AP2822 is available in the standard package of
SOT-23-5.
Applications
USB Power Management
USB Bus/Self Powered Hubs
Hot-plug Power Supplies
Battery-charger Circuits
Notebooks, Motherboard PCs
Features
Low MOSFET On Resistance: 85m
Compliant to USB Specifications
Available 4 Versions of Continuous Load:
0.5A/1.0A/1.5A/2.0A
Logic Level Enable Pin: Available with
Active-high or Active-low Version
Operating Voltage Range: 2.7V to 5.5V
Low Supply Current: 68µA (Typ.)
Low Shutdown Current: 1.0µA (Max)
Under-voltage Lockout
Soft Start-up
Over-current Protection
Over Temperature Protection
Load Short Protection with Fold-back
No Reverse Current When Power Off
Deglitched FLAG Output with Open Drain
With Output Shutdown Pull-low Resistor
Figure 1. Package Type of AP2822
SOT-23-5
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
2
Pin Configuration
K/KA/KB/KE Package
SOT-23-5
K KA
K
B KE
Figure 2. Pin Configuration of AP2822 (Top View)
1
2
34
5
FLAG
GND
EN
VOUT
VIN
1
2
34
5
GND
FLAG
VOUT
VIN
EN
1
2
34
5
GND
VIN
VOUT
EN
VOUT 1
2
34
5
GND
FLAG EN
VOUT VIN
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
3
Pin Descriptions
Pin Number Pin Name Function
1(K)
FLAG Fault flag pin, output with open drain, need a pull-up resistor
in application, active low to indicate OCP or OTP
3(KA/KE)
2 GND Ground
3(K)
EN Chip enable control input, active low or high
1(KA)
4(KB/KE)
4(K/KA)
VIN Supply input pin
3(KB)
5(KE)
5(K/KA)
VOUT Switch output voltage
1,5(KB)
1(KE)
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
4
Functional Block Diagram
Clock
Band Gap
Reference
UVLO
Gate Control
Over Current
Limiting
Thermal
Sense
FLAG
Deglitch Logic
Current
Sense
CMP
VIN
VOUT
GND
EN 3(1){4}[4]
2(2){2}[2]
4(4){3}[5]
5(5){1,5}[1]
FLAG
Shutdown
Signal
1(3)[3]
A(B){C}[D]
A: SOT-23-5(K Package)
B: SOT-23-5(KA Package)
C: SOT-23-5(KB Package)
D: SOT-23-5(KE Package)
Figure 3. Functional Block Diagram of AP2822
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
5
Ordering Information
AP2822 -
Circuit Type
Package Temperature
Range Condition Part Number Marking ID Packing
Type
SOT-23-5 -40 to 85°C
Active High
(Continuous 0.5A) AP2822AKTR-G1GCQ Tape & Reel
Active Low
(Continuous 0.5A) AP2822BKTR-G1 GCR Tape & Reel
Active High
(Continuous 1.0A) AP2822CKTR-G1GCS Tape & Reel
Active Low
(Continuous 1.0A) AP2822DKTR-G1GCT Tape & Reel
Active High
(Continuous 1.5A) AP2822EKTR-G1GCU Tape & Reel
Active Low
(Continuous 1.5A) AP2822FKTR-G1GCV Tape & Reel
Active High
(Continuous 2.0A) AP2822GKTR-G1GCW Tape & Reel
Active Low
(Continuous 2.0A) AP2822HKTR-G1GCZ Tape & Reel
Package
K/KA/KB/KE: SOT-23-5
Condition
A: Active High (Continuous 0.5A)
B: Active Low (Continuous 0.5A)
C: Active High (Continuous 1.0A)
D: Active Low (Continuous 1.0A)
E: Active High (Continuous 1.5A)
F: Active Low (Continuous 1.5A)
G: Active High (Continuous 2.0A)
H: Active Low (Continuous 2.0A)
G1: Green
TR: Tape & Reel
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
6
Ordering Information (Continued)
Package Temperature
Range Condition Part Number Marking ID Packing
Type
SOT-23-5 -40 to 85°C
Active High
(Continuous 0.5A) AP2822AKATR-G1 GDQ Tape & Reel
Active Low
(Continuous 0.5A) AP2822BKATR-G1 GDR Tape & Reel
Active High
(Continuous 1.0A) AP2822CKATR-G1 GDS Tape & Reel
Active Low
(Continuous 1.0A) AP2822DKATR-G1 GDT Tape & Reel
Active High
(Continuous 1.5A) AP2822EKATR-G1 GDU Tape & Reel
Active Low
(Continuous 1.5A) AP2822FKATR-G1 GDV Tape & Reel
Active High
(Continuous 2.0A) AP2822GKATR-G1 GDW Tape & Reel
Active Low
(Continuous 2.0A) AP2822HKATR-G1 GDZ Tape & Reel
SOT-23-5 -40 to 85°C
Active High
(Continuous 0.5A) AP2822AKBTR-G1 GLATape & Reel
Active Low
(Continuous 0.5A) AP2822BKBTR-G1 GLB Tape & Reel
Active High
(Continuous 1.0A) AP2822CKBTR-G1 GLC Tape & Reel
Active Low
(Continuous 1.0A) AP2822DKBTR-G1 GLDTape & Reel
Active High
(Continuous 1.5A) AP2822EKBTR-G1 GLE Tape & Reel
Active Low
(Continuous 1.5A) AP2822FKBTR-G1 GLF Tape & Reel
Active High
(Continuous 2.0A) AP2822GKBTR-G1 GLGTape & Reel
Active Low
(Continuous 2.0A) AP2822HKBTR-G1 GLHTape & Reel
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
7
Ordering Information (Continued)
Package Temperature
Range Condition Part Number Marking ID Packing
Type
SOT-23-5 -40 to 85°C
Active High
(Continuous 0.5A) AP2822AKETR-G1 GLITape & Reel
Active Low
(Continuous 0.5A) AP2822BKETR-G1 GLJ Tape & Reel
Active High
(Continuous 1.0A) AP2822CKETR-G1 GLK Tape & Reel
Active Low
(Continuous 1.0A) AP2822DKETR-G1 GLLTape & Reel
Active High
(Continuous 1.5A) AP2822EKETR-G1 GLM Tape & Reel
Active Low
(Continuous 1.5A) AP2822FKETR-G1 GLN Tape & Reel
Active High
(Continuous 2.0A) AP2822GKETR-G1 GLOTape & Reel
Active Low
(Continuous 2.0A) AP2822HKETR-G1 GLPTape & Reel
BCD Semiconductor's Pb-free products, as designated with "G1" suffix in the part number, are RoHS compliant
and green.
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
8
Absolute Maximum Ratings (Note 1)
Parameter Symbol Value Unit
Power Supply Voltage VIN 6.0 V
Operating Junction Temperature
Range TJ150 ºC
Storage Temperature Range TSTG -65 to 150 ºC
Lead Temperature (Soldering, 10sec) TLEAD 260 ºC
Thermal Resistance
(Junction to Ambient) θJA TBD oC/W
ESD (Machine Model) 200 V
ESD (Human Body Model) 2000 V
Note 1: Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. These are stress ratings only, and functional operation of the device at these or any other conditions
beyond those indicated under “Recommended Operating Conditions” is not implied. Exposure to “Absolute
Maximum Ratings” for extended periods may affect device reliability.
Recommended Operating Conditions
Parameter Symbol Min Max Unit
Supply Voltage VIN 2.7 5.5 V
Operating Ambient Temperature
Range TA-40 85 °C
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
9
Electrical Characteristics
(VIN=5.0V, CIN=2.2µF, COUT=1.0µF, Typical TA=25°C, unless otherwise specified)
Parameter Symbol Condition Min Typ Max Unit
Supply Voltage VIN 2.7 5.5 V
Switch On Resistance RDS(ON) V
IN=5.0V, IOUT=2.0A 85 110 m
Current Limit ILIMIT
AP2822A/B(0.5A) , VOUT=4.0V 0.7 1.0 1.4
A
AP2822C/D(1.0A), VOUT=4.0V 1.1 1.5 2.1
AP2822E/F(1.5A), VOUT=4.0V 1.65 2.2 2.8
AP2822G/H(2.0A), VOUT=4.0V 2.2 2.7 3.2
Supply Current ISUPPLY V
IN=5.0V, No Load 68 95 µA
Fold-back Short Current ISHORT
AP2822 A/B/C/D, VOUT=0V 0.7
A
AP2822 E/F/G/H, VOUT=0V 1.1
Shutdown Supply Current ISHUTDOWN Chip Disable, Shutdown Mode 0.1 1.0 µA
Enable High Input Threshold VENH 1.6 5.5 V
Enable Low Input Threshold VENL 0 1.0 V
Enable Pin Input Current IEN Force 0V to 5.0V at EN Pin -1.0 1.0 µA
Under Voltage Lockou
t
Threshold Voltage VUVLO V
IN Increasing from 0V 2.2 2.5 3.0 V
Under Voltage Hysteresis VUVLOHY 0.2 V
Reverse Current IREVERSE Chip Disable, VOUT>VIN 0.1 1.0 µA
Output Pull Low Resistance
after Shutdown RDISCHARGE 100 200
Output Turn-on Time tON From Enable Active to 90% o
f
Output 500 µs
FLAG Pin Delay Time tDFLG From Over Current Fault Condition
to Flag Active 5 10 15 ms
FLAG Pin Low Voltage VFLG I
SINK=5.0mA 35 70 mV
FLAG Pin Leakage Current ILEAKAGE FLAG Disable, Force 5.0V 1.0 µA
Thermal Shutdown
Temperature TOTSD 150 oC
Thermal Shutdown Hysteresis THYOTSD 30
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
10
Typical Performance Characteristics
Figure 4. Supply Current vs. Ambient Temperature Figure 5. Supply Current vs. Supply Voltage
Figure 6. RDS(ON) vs. Ambient Temperature Figure 7. RDS(ON) vs. Supply Voltage
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
0
10
20
30
40
50
60
70
80
90
100
Supply Current (μA)
VIN=5V
Enable Active
No Load
Ambient Temperature (OC)
1.01.52.02.53.03.54.04.55.05.5
-10
0
10
20
30
40
50
60
70
80
90
100
Supply Current (μA)
Supply Voltage (V)
TA=-40OC
TA=25OC
TA=85OC
Enable Active
-40-20 0 20406080
0
20
40
60
80
100
120
140
160
180
200
IOUT=1.0A
RDS(ON) (mΩ)
Ambient Temperature (OC)
VIN=5.0V
VIN=3.3V
3.0 3.5 4.0 4.5 5.0 5.5
30
40
50
60
70
80
90
100
110
120
130
140
150
160
170
180
TA=-40OC
TA=25OC
TA=85OC
IOUT=1.0A
RDS(ON) (mΩ)
Supply Voltage (V)
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
11
Typical Performance Characteristics (Continued)
Figure 8. Current Limit vs. Supply Voltage Figure 9. Current Limit vs. Ambient Temperature
Figure 10. Current Limit vs. Supply Voltage Figure 11. Current Limit vs. Ambient Temperature
3.0 3.5 4.0 4.5 5.0 5.5
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
For AP2822C/D
TA=-40oC
TA=250C
TA=850C
Current Limit (A)
Supply Voltage (V)
3.0 3.5 4.0 4.5 5.0 5.5
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4 For AP2822A/B
Current Limit (A)
Supply Voltage (V)
TA= -40OC
TA= 25OC
TA= 85OC
-40-200 20406080
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4 For AP2822A/B
Current Limit (A)
Ambient Temperature (OC)
VIN=5.0V
VIN=3.3V
-40-20 0 20406080
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
For AP2822C/D
Current Limit (A)
Ambient Temperature (OC)
VIN=5.0V
VIN=3.3V
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
12
Typical Performance Characteristics (Continued)
Figure 12. Current Limit vs. Supply Voltage Figure 13. Current Limit vs. Ambient Temperature
Figure 14. Current Limit vs. Supply Voltage Figure 15. Current Limit vs. Ambient Temperature
-40-200 20406080
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
Current Limit (A)
Ambient Temperature (OC)
VIN=5.0V
VIN=3.3V
For AP2822G/H
3.0 3.5 4.0 4.5 5.0 5.5
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
For AP2822G/H
Current Limit (A)
Supply Voltage (V)
TA=-40oC
TA=25oC
TA=85oC
3.0 3.5 4.0 4.5 5.0 5.5
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
For AP2822E/F
Current Limit (A)
Supply Voltage (V)
TA=-40OC
TA=25OC
TA=85OC
-40-20 0 20406080
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
For AP2822E/F
Current Limit (A)
Ambient Temperature (OC)
VIN=5.0V
VIN=3.3V
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
13
Typical Performance Characteristics (Continued)
Figure 16. UVLO Voltage vs. Ambient Temperature Figure 17. Flag Delay Time during Over Current
vs. Ambient Temperature
Figure 18. Flag Delay Time during Over Current Figure 19. Output Short to GND Current
vs. Supply Voltage vs. Supply Voltage
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
2.20
2.25
2.30
2.35
2.40
2.45
2.50
2.55
2.60
2.65
2.70
Ambient Temperature (OC)
Enable Active
VIN Rising
VIN Falling
Under Voltage Lockout Threshold Voltage (V)
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
5
6
7
8
9
10
11
12
13
14
15
VIN=5V
Enable Active
Flag Delay Time during Over Current (ms)
Ambient Temperature (OC)
3.0 3.5 4.0 4.5 5.0 5.5
6
8
10
12
14
Supply Voltage (V)
TA=25OC
VIN=5V
Enable Active
Flag Delay Time during Over Current (ms)
3.0 3.5 4.0 4.5 5.0
1.00
1.02
1.04
1.06
1.08
1.10
1.12
1.14
1.16
1.18
1.20
1.22
1.24
1.26
1.28
1.30
For AP2822 E/F/G/H
Supply Voltage (V)
Output Short to GND Current (A)
VIN=5V
Enable Active
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
14
Typical Performance Characteristics (Continued)
Figure 20. Output Short to GND Current Figure 21. Enable Threshold Voltage
vs. Ambient Temperature vs. Ambient Temperature
Figure 22. Enable Threshold Voltage Figure 23. Output Turn On and Rise Time
vs. Supply Voltage (CIN=1.0μF, COUT=1.0μF, No Load)
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
1.0
1.1
1.2
1.3
1.4
1.5
For AP2822 E/F/G/H
Ambient Temperature (OC)
Output Short to GND Current (A)
VIN=5V
Enable Active
-40.0 -20.0 0.0 20.0 40.0 60.0 80.0
1.0
1.1
1.2
1.3
1.4
1.5
1.6
VENH
VENL
Ambient Temperature (OC)
VIN=5V
Enable Threshold Voltage (V)
3.0 3.5 4.0 4.5 5.0 5.5
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Supply Voltage (V)
VENH
VENL
TA=25OC
Enable Threshold Voltage (V)
VEN
5V/div
IINRUSH
20mA/div
VOUT
1V/div
Time 500μs/div
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
15
Typical Performance Characteristics (Continued)
Figure 24. Output Turn On and Rise Time Figure 25. Output Turn On and Rise Time
(CIN=1.0μF, COUT=1.0μF, RL=3.3Ω) (C
IN=1.0μF, C OUT=100μF, No Load)
Figure 26. Output Turn Off and Fall Time Figure 27. Output Turn Off and Fall Time
(VIN=5V, CIN=1.0μF, No Load) (V
IN=5V, CIN=1.0μF, COUT=470μF, RL=3.3Ω)
VEN
5V/div
IINRUSH
1A/div
Time 500μs/div Time 500μs/div
Time 5ms/div Time 500μs/div
VOUT
1V/div
VEN
5V/div
IINRUSH
1A/div
VOUT
1V/div
VEN
5V/div
VOUT
1V/div
VEN
5V/di
v
VOUT
1V/div
COUT=100μF
COUT=22μF
COUT=1μF
COUT=470μF
COUT=220μF
IOUT
1A/div
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
16
Typical Performance Characteristics (Continued)
Figure 28. Output Short to GND Current Figure 29. FLAG Response during Over Current
(VIN=5V, CIN=1.0μF)
Figure 30. FLAG Response during
Over Temperature (TA=125 ºC)
VEN
5V/div
IOUT
1A/div
Time 20ms/div Time 5ms/div
VOUT
1V/div
VFLAG
1V/div
IOUT
1A/div
VOUT
1V/div
Time 5ms/div
VFLAG
1V/div
IOUT
1A/div
VOUT
1V/div
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
17
Typical Application
CIN
(Note2)
2.2µF
VIN
VOUT
FLAG
GND
AP2822
EN
VIN=5V
Enable
USB Controller
VBUS
GND
D+
D-
COUT
1µF
R
10k
1(3)[3]
2(2){2}[2]
3(1){4}[4]
4(4){3}[5]
5(5){1,5}[1]
A(B){C}[D]
A: SOT-23-5(K Package)
B: SOT-23-5(KA Package)
C: SOT-23-5(KB Package)
D: SOT-23-5(KE Package)
Note 2: 2.2µF input capacitor is enough in most application cases.
If the VOUT is short to ground frequently during usage, large size input capacitor is necessary, recommend
22µF.
Figure 31. Typical Application of AP2822
0.5A to 2.0A High-side Power Distribution Switches AP2822
Dec.
2012 Rev 1. 1 BCD Semiconductor Manufacturing Limited
18
Mechanical Dimensions
SOT-23-5 Unit:
mm(inch)
2.820(0.111)
0.000(0.000)
0.300(0.012)
0.950(0.037)
0.900(0.035)
0.100(0.004)
0.200(0.008)
8°
0°
3.020(0.119)
0.400(0.016)
0.150(0.006)
1.300(0.051)
0.200(0.008)
1.800(0.071)
2.000(0.079)
0.700(0.028)
REF
TYP
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility fo r use of any its products for any
particular purpose, nor does BCD Semiconductor Man ufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Limited
800, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
BCD Semiconductor Manufacturing Limited
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd. Shenzhen Office
Advanced Analog Circuits (Shanghai) Corporation Shenzhen Office
Room E, 5F, Noble Center, No.1006, 3rd Fuzhong Road, Futian District, Shenzhen 518026, China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corporation
30920 Huntwood Ave. Hayward,
CA 94544, U.S.A
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- IC Design Group
Advanced Analog Circuits (Shanghai) Corporation
8F, Zone B, 900, Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6495 9539, Fax: +86-21-6485 9673
BCD Semiconductor Manufacturing Limited
http://www.bcdsemi.com
BCD Semiconductor Manufacturing Limited
IMPORTANT NOTICE
BCD Semiconductor Manufacturing Limited reserves the right to make changes without further notice to any products or specifi-
cations herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for use of any its products for any
particular purpose, nor does BCD Semiconductor Manufacturing Limited assume any liability arising out of the application or use
of any its products or circuits. BCD Semiconductor Manufacturing Limited does not convey any license under its patent rights or
other rights nor the rights of others.
- Wafer Fab
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd.
800 Yi Shan Road, Shanghai 200233, China
Tel: +86-21-6485 1491, Fax: +86-21-5450 0008
MAIN SITE
REGIONAL SALES OFFICE
Shenzhen Office
Shanghai SIM-BCD Semiconductor Manufacturing Co., Ltd., Shenzhen Office
Unit A Room 1203, Skyworth Bldg., Gaoxin Ave.1.S., Nanshan District, Shenzhen,
China
Tel: +86-755-8826 7951
Fax: +86-755-8826 7865
Taiwan Office
BCD Semiconductor (Taiwan) Company Limited
4F, 298-1, Rui Guang Road, Nei-Hu District, Taipei,
Taiwan
Tel: +886-2-2656 2808
Fax: +886-2-2656 2806
USA Office
BCD Semiconductor Corp.
30920 Huntwood Ave. Hayward,
CA 94544, USA
Tel : +1-510-324-2988
Fax: +1-510-324-2788
- Headquarters
BCD Semiconductor Manufacturing Limited
No. 1600, Zi Xing Road, Shanghai ZiZhu Science-based Industrial Park, 200241, China
Tel: +86-21-24162266, Fax: +86-21-24162277