Nonvolatile Memory,
Dual 256-Position Digital Potentiometer
Data Sheet AD5232
Rev. B
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responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
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FEATURES
Dual-channel, 256-position resolution
10 kΩ, 50 kΩ, and 100 kΩ nominal terminal resistance
Nonvolatile memory maintenance of wiper settings
Predefined linear increment/decrement instructions
Predefined ±6 dB step log taper increment/decrement
instructions
SPI-compatible serial interface
Wiper settings and EEMEM readback
3 V to 5 V single-supply operation
±2.5 V dual-supply operation
14 bytes of general-purpose user EEMEM
Permanent memory write protection
100-year typical data retention (TA = 55°C)
APPLICATIONS
Mechanical potentiometer replacement
Instrumentation: gain and offset adjustment
Programmable voltage-to-current conversion
Programmable filters, delays, and time constants
Programmable power supply
Low resolution DAC replacement
Sensor calibration
FUNCTIONAL BLOCK DIAGRAM
RDAC2
RDAC1
REGISTER
EEMEM1
RDAC2
REGISTER
EEMEM2
14 BYTES
USER
EEMEM
RDAC1
ADDR
DECODE
SERIAL
INTERFACE
POWER-ON
RESET
EEMEM
CONTROL
AD5232
V
DD
V
SS
GND
A1
W1
B1
A2
W2
B2
RDY
WP
PR
S
DO
SDI
CLK
CS
02618-001
Figure 1.
GENERAL DESCRIPTION
The AD5232 device provides a nonvolatile, dual-channel,
digitally controlled variable resistor (VR) with 256-position
resolution. This device performs the same electronic adjustment
function as a mechanical potentiometer with enhanced resolution,
solid state reliability, and superior low temperature coefficient
performance. The versatile programming of the AD5232, per-
ormed via a microcontroller, allows multiple modes of operation
and adjustment.
In the direct program mode, a predetermined setting of the RDAC
registers (RDAC1 and RDAC2) can be loaded directly from the
microcontroller. Another important mode of operation allows
the RDACx register to be refreshed with the setting previously
stored in the corresponding EEMEM register (EEMEM1 and
EEMEM2). When changes are made to the RDACx register to
establish a new wiper position, the value of the setting can be
saved into the EEMEMx register by executing an EEMEM save
operation. After the settings are saved in the EEMEMx register,
these values are automatically transferred to the RDACx register
to set the wiper position at system power-on. Such operation is
enabled by the internal preset strobe. The preset strobe can also
be accessed externally.
All internal register contents can be read via the serial data
output (SDO). This includes the RDAC1 and RDAC2 registers,
the corresponding nonvolatile EEMEM1 and EEMEM2 registers,
and the 14 spare USER EEMEM registers that are available for
constant storage.
The basic mode of adjustment is the increment and decrement
command instructions that control the wiper position setting
register (RDACx). An internal scratch pad RDACx register can
be moved up or down one step of the nominal resistance between
Terminal A and Terminal B. This step adjustment linearly changes
the wiper to Terminal B resistance (RWB) by one position segment
of the device’s end-to-end resistance (RAB). For exponential/
logarithmic changes in wiper setting, a left/right shift command
instruction adjusts the levels in ±6 dB steps, which can be useful
for audio and light alarm applications.
The AD5232 is available in a thin, 16-lead TSSOP package.
All parts are guaranteed to operate over the extended industrial
temperature range of −40°C to +85°C. An evaluation board, the
EVAL-AD5232-10EBZ, is available.
AD5232 Data Sheet
Rev. B | Page 2 of 24
TABLE OF CONTENTS
Features .............................................................................................. 1
Applications....................................................................................... 1
Functional Block Diagram .............................................................. 1
General Description......................................................................... 1
Revision History ............................................................................... 2
Specifications..................................................................................... 3
Electrical Characteristics—10 kΩ, 50 kΩ, 100 kΩ Versions .. 3
Interface Timing Characteristics................................................ 5
Absolute Maximum Ratings............................................................ 7
Thermal Resistance ...................................................................... 7
ESD Caution.................................................................................. 7
Pin Configuration and Function Descriptions............................. 8
Typical Performance Characteristics ............................................. 9
Test Circuits..................................................................................... 12
Theory of Operation ...................................................................... 14
Scratch Pad and EEMEM Programming................................. 14
Basic Operation .......................................................................... 14
EEMEM Protection.................................................................... 14
Digital Input/Output Configuration........................................ 14
Serial Data Interface................................................................... 15
Daisy-Chaining Operation........................................................ 15
Advanced Control Modes ......................................................... 17
Using Additional Internal, Nonvolatile EEMEM................... 18
Terminal Voltage Operating Range ......................................... 18
Detailed Potentiometer Operation .......................................... 18
Programming the Variable Resistor......................................... 19
Programming the Potentiometer Divider............................... 20
Operation from Dual Supplies ................................................. 20
Application Programming Examples ...................................... 20
Equipment Customer Start-up Sequence
for a PCB Calibrated Unit with Protected Settings................ 21
Flash/EEMEM Reliability.......................................................... 21
Evaluation Board........................................................................ 21
Outline Dimensions ....................................................................... 22
Ordering Guide .......................................................................... 22
REVISION HISTORY
09/11—Rev. A to Rev. B
Change to Resistor Noise Voltage Parameter in Table 1.............. 4
10/09—Rev. 0 to Rev. A
Updated Format..................................................................Universal
Changes to Data Sheet Title ............................................................ 1
Changes to Features Section............................................................ 1
Changes to Applications Section.................................................... 1
Change to Wiper Resistance Parameter, Table 1 .......................... 3
Changes to CS Rise to RDY Fall Time Parameter, Table 2 ..........5
Changes to Figure 2 and Figure 3....................................................6
Changes to Figure 24...................................................................... 12
Added Figure 32 ............................................................................. 13
Changes to Serial Data Interface Section .................................... 15
Changes to Programming the Variable Resistor Section .......... 19
Changes to Ordering Guide.......................................................... 22
10/01—Revision 0: Initial Version
Data Sheet AD5232
Rev. B | Page 3 of 24
SPECIFICATIONS
ELECTRICAL CHARACTERISTICS—10 kΩ, 50 kΩ, 100 kΩ VERSIONS
VDD = 3 V ± 10% or 5 V ± 10% and VSS = 0 V, VA = +VDD, VB = 0 V, −40°C < TA < +85°C, unless otherwise noted.
Table 1.
Parameter Symbol Conditions Min Typ1 Max Unit
DC CHARACTERISTICS,
RHEOSTAT MODE
Specifications apply to all VRs
Resistor Differential Nonlinearity2 R-DNL RWB, VA = NC −1 ±1/2 +1 LSB
Resistor Nonlinearity2 R-INL RWB, VA = NC −0.4 +0.4 % FS
Nominal Resistor Tolerance ∆RAB −40 +20 %
Resistance Temperature Coefficient ∆RAB/∆T 600 ppm/°C
Wiper Resistance RW IW = 100 μA, VDD = 5.5 V, code = 0x1E 50 100 Ω
I
W = 100 μA, VDD = 3 V, code = 0x1E 200 Ω
POTENTIOMETER DIVIDER MODES
Resolution N 8 Bits
Differential Nonlinearity3 DNL −1 ±1/2 +1 LSB
Integral Nonlinearity3 INL −0.4 +0.4 % FS
Voltage Divider Temperature
Coefficient
∆VW/ΔT Code = half scale 15 ppm/°C
Full-Scale Error VWFSE Code = full scale −3 0 % FS
Zero-Scale Error VWZSE Code = zero scale 0 3 % FS
RESISTOR TERMINALS
Terminal Voltage Range4 VA, VB, VW V
SS VDD V
Capacitance Ax, Bx5 C
A, CB f = 1 MHz, measured to GND, code = half-scale 45 pF
Capacitance Wx5 C
W f = 1 MHz, measured to GND, code = half scale 60 pF
Common-Mode Leakage Current5, 6 I
CM VW = VDD/2 0.01 1 μA
DIGITAL INPUTS AND OUTPUTS
Input Logic High VIH With respect to GND, VDD = 5 V 2.4 V
Input Logic Low VIL With respect to GND, VDD = 5 V 0.8 V
Input Logic High VIH With respect to GND, VDD= 3 V 2.1 V
Input Logic Low VIL With respect to GND, VDD = 3 V 0.6 V
Input Logic High VIH With respect to GND, VDD = +2.5 V, VSS = −2.5 V 2.0 V
Input Logic Low VIL With respect to GND, VDD = +2.5 V, VSS = −2.5 V 0.5 V
Output Logic High (SDO and RDY) VOH RPULL-UP = 2.2 kΩ to 5 V 4.9 V
Output Logic Low VOL IOL = 1.6 mA, VLOGIC = 5 V 0.4 V
Input Current IIL VIN = 0 V or VDD ±2.5 μA
Input Capacitance5 CIL 4 pF
POWER SUPPLIES
Single-Supply Power Range VDD V
SS = 0 V 2.7 5.5 V
Dual-Supply Power Range VDD/VSS ±2.25 ±2.75 V
Positive Supply Current IDD VIH = VDD or VIL = GND 3.5 10 μA
Programming Mode Current IDD(PG) V
IH = VDD or VIL = GND 35 mA
Read Mode Current7 IDD(XFR) V
IH = VDD or VIL = GND 0.9 3 9 mA
Negative Supply Current ISS VIH = VDD or VIL = GND,
V
DD = +2.5 V, VSS = −2.5 V 3.5 10 μA
Power Dissipation8 P
DISS VIH = VDD or VIL = GND 0.018 0.05 mW
Power Supply Sensitivity5 PSS ∆VDD = 5 V ± 10% 0.002 0.01 %/%
AD5232 Data Sheet
Rev. B | Page 4 of 24
Parameter Symbol Conditions Min Typ1 Max Unit
DYNAMIC CHARACTERISTICS5, 9
Bandwidth −3 dB, BW_10kΩ, R = 10 kΩ 500 kHz
Total Harmonic Distortion THDw V
A = 1 V rms, VB = 0 V, f = 1 kHz, RAB = 10 kΩ 0.022 %
V
A = 1 V rms, VB = 0 V, f = 1 kHz, RAB = 50 kΩ, 100 kΩ 0.045 %
VW Settling Time tS V
DD = 5 V, VSS = 0 V, VA = VDD, VB = 0 V, 0.65/3/6 μs
V
W = 0.50% error band, Code 0x00 to Code 0x80
for RAB = 10 kΩ/50 kΩ/100 kΩ
Resistor Noise Voltage eN_WB R
WB = 5 kΩ, f= 1 kHz 9 nV/√Hz
Crosstalk (CW1/CW2) CT V
A = VDD, VB = 0 V, measure VW with −5 nV-sec
adjacent VR making full-scale code change
Analog Crosstalk (CW1/CW2) CTA V
A1 = VDD, VB1 = 0 V, measure VW1 with VW2 = −70 dB
5 V p-p @ f = 10 kHz; Code1 = 0x80; Code2 = 0xFF
FLASH/EE MEMORY RELIABILITY
Endurance10 100
kCycles
Data Retention11 100
Years
1 Typical parameters represent average readings at 25°C and VDD = 5 V.
2 Resistor position nonlinearity (R-INL) error is the deviation from an ideal value measured between the maximum resistance and the minimum resistance wiper
positions. R-DNL measures the relative step change from ideal between successive tap positions. Parts are guaranteed monotonic. IW ~ 50 μA @ VDD = 2.7 V and IW ~
400 μA @ VDD = 5 V for the RAB = 10 kΩ version, IW ~ 50 μA for the RAB = 50 kΩ version, and IW ~ 25 μA for the RAB = 100 kΩ version (see Figure 22).
3 INL and DNL are measured at VW with the RDACx configured as a potentiometer divider similar to a voltage output digital-to-analog converter. VA = VDD and VB = VSS.
DNL specification limits of ±1 LSB maximum are guaranteed monotonic operating conditions (see Figure 23).
4 The A, B, and W resistor terminals have no limitations on polarity with respect to each other. Dual supply operation enables ground-referenced bipolar signal
adjustment.
5 Guaranteed by design; not subject to production test.
6 Common-mode leakage current is a measure of the dc leakage from any A, B, or W terminal to a common-mode bias level of VDD/2.
7 Transfer (XFR) mode current is not continuous. Current is consumed while the EEMEMx locations are read and transferred to the RDACx register (see Figure 13).
8 PDISS is calculated from (IDD × VDD) + (ISS × VSS).
9 All dynamic characteristics use VDD = +2.5 V and VSS = −2.5 V, unless otherwise noted.
10 Endurance is qualified to 100,000 cycles per JEDEC Std. 22, Method A117 and measured at −40°C, +25°C, and +85°C. Typical endurance at +25°C is 700,000 cycles.
11 The retention lifetime equivalent at junction temperature (TJ) = 55°C, as per JEDEC Std. 22, Method A117. Retention lifetime, based on an activation energy of 0.6 eV,
derates with junction temperature as shown in Figure 44 in the Flash/EEMEM Reliability section. The AD5232 contains 9,646 transistors. Die size = 69 mil × 115 mil,
7,993 sq. mil.
Data Sheet AD5232
Rev. B | Page 5 of 24
INTERFACE TIMING CHARACTERISTICS
All input control voltages are specified with tR = tF = 2.5 ns (10% to 90% of 3 V) and are timed from a voltage level of 1.5 V. Switching
characteristics are measured using both VDD = 3 V and VDD = 5 V.
Table 2.
Parameter1, 2 Symbol Conditions Min Typ3 Max Unit
Clock Cycle Time (tCYC) t1 20 ns
CS Setup Time t2 10 ns
CLK Shutdown Time to CS Rise t3 1 tCYC
Input Clock Pulse Width t4, t5 Clock level high or low 10 ns
Data Setup Time t6 From positive CLK transition 5 ns
Data Hold Time t7 From positive CLK transition 5 ns
CS to SDO-SPI Line Acquire t8 40 ns
CS to SDO-SPI Line Release t9 50 ns
CLK to SDO Propagation Delay4 t
10 R
P = 2.2 kΩ, CL < 20 pF 50 ns
CLK to SDO Data Hold Time t11 R
P = 2.2 kΩ, CL < 20 pF 0 ns
CS High Pulse Width5 t12 10 ns
CS High to CS High5 t13 4 tCYC
RDY Rise to CS Fall t14 0 ns
CS Rise to RDY Fall Time t15 0.15 0.3 ms
Store/Read EEMEM Time6 t
16 Applies to Command Instruction 2, Command
Instruction 3, and Command Instruction 9
25 ms
CS Rise to Clock Rise/Fall Setup t17 10 ns
Preset Pulse Width (Asynchronous) tPRW Not shown in timing diagram 50 ns
Preset Response Time to RDY High tPRESP PR pulsed low to refresh wiper positions 70 μs
1 Guaranteed by design; not subject to production test.
2 See the Timing Diagrams section for the location of measured values.
3 Typicals represent average readings at 25°C and VDD = 5 V.
4 Propagation delay depends on the value of VDD, RPULL-UP, and CL.
5 Valid for commands that do not activate the RDY pin.
6 RDY pin low only for Command Instruction 2, Command Instruction 3, Command Instruction 8, Command Instruction 9, Command Instruction 10, and the PR hardware pulse:
CMD_8 ~ 1 ms, CMD_9 = CMD_10 ~ 0.12 ms, and CMD_2 = CMD_3 ~ 20 ms. Device operation at TA = −40°C and VDD < 3 V extends the save time to 35 ms.
AD5232 Data Sheet
Rev. B | Page 6 of 24
Timing Diagrams
CPOL = 1
t
12
t
13
t
3
t
17
t
9
t
11
t
5
t
4
t
2
t
1
CLK
t
8
B16*
B15
(MSB)
B15
(MSB)
HIGH
OR LOW
HIGH
OR LOW
B15 B0
B0
(LSB)
B0
(LSB)
RDY
CPHA = 1
t
10
t
7
t
6
t
14
t
15
t
16
SDO
SDI
02618-002
CS
NOTES
1. B24 IS AN EXTRA BIT THAT IS NOT DEFINED, BUT IT IS USUALLY THE LSB OF THE CHARACTER THAT WAS PREVIOUSLY TRANSMITTED.
2. THE CPOL = 1 MICROCONTROLLER COMMAND ALIGNS THE INCOMING DATA TO THE POSITIVE EDGE OF THE CLOCK.
Figure 2. CPHA = 1
t
12
t
13
t
3
t
17
t
9
t
11
t
5
t
4
t
2
t
1
CLK
CPOL = 0
t
8
SDO
B15 B0
HIGH
OR LOW
HIGH
OR LOW
SDI
RDY
CPHA = 0
t
10
t
7
t
6
t
14
t
15
t
16
*
02618-003
CS
B15
(MSB IN)
B15
(MSB)
B0
(LSB)
B15
(MSB OUT)
B0
(LSB)
B0
(LSB)
NOTES
1. THIS EXTRA BIT IS NOT DEFINED, BUT IT IS USUALLY THE MSB OF THE CHARACTER THAT WAS JUST RECEIVED.
2. THE CPOL = 0 MICROCONTROLLER COMMAND ALIGNS THE INCOMING DATA TO THE POSITIVE EDGE OF THE CLOCK.
Figure 3. CPHA = 0
Data Sheet AD5232
Rev. B | Page 7 of 24
ABSOLUTE MAXIMUM RATINGS
TA = 25°C, unless otherwise noted.
Table 3.
Parameter Rating
VDD to GND −0.3 V, +7 V
VSS to GND +0.3 V, −7 V
VDD to VSS 7 V
VA, VB, VW to GND VSS − 0.3 V, VDD + 0.3 V
AX − BX, AX − WX, BX − WX
Intermittent1 ±20 mA
Continuous ±2 mA
Digital Inputs and Output Voltage to GND −0.3 V, VDD + 0.3 V
Operating Temperature Range2 −40°C to +85°C
Maximum Junction Temperature (TJ max) 150°C
Storage Temperature Range −65°C to +150°C
Lead Temperature, Soldering
Vapor Phase (60 sec) 215°C
Infrared (15 sec) 220°C
Package Power Dissipation (TJ max − TA)/θJA
Stresses above those listed under Absolute Maximum Ratings
may cause permanent damage to the device. This is a stress
rating only; functional operation of the device at these or any
other conditions above those listed in the operational sections
of this specification is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect
device reliability.
THERMAL RESISTANCE
θJA is specified for the worst-case conditions, that is, a device
soldered in a circuit board for surface-mount packages.
Table 4. Thermal Resistance
Package Type θJA θ
JC Unit
16-Lead TSSOP (RU-16) 150 28 °C/W
ESD CAUTION
1 Maximum terminal current is bounded by the maximum current handling of
the switches, maximum power dissipation of the package, and maximum
applied voltage across any two of the A, B, and W terminals at a given
resistance.
2 Includes programming of nonvolatile memory.
AD5232 Data Sheet
Rev. B | Page 8 of 24
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
1
2
3
4
5
6
7
8
SDI
SDO
GND
W1
A1
V
SS
CLK
B1
16
15
14
13
12
11
10
9
CS
PR
WP
W2
B2
A2
V
DD
RDY
AD5232
TOP VIEW
(Not to Scale)
02618-004
Figure 4. Pin Configuration
Table 5. Pin Function Descriptions
Pin
No. Mnemonic Description
1 CLK Serial Input Register Clock. Shifts in one bit at a time on positive clock edges.
2 SDI Serial Data Input. The MSB is loaded first.
3 SDO Serial Data Output. This open-drain output requires an external pull-up resistor. Command Instruction 9 and Command
Instruction 10 activate the SDO output (see Table 8). Other commands shift out the previously loaded SDI bit pattern
delayed by 16 clock pulses, allowing daisy-chain operation of multiple packages.
4 GND Ground, Logic Ground Reference.
5 VSS Negative Power Supply. Connect to 0 V for single-supply applications.
6 A1 Terminal A of RDAC1.
7 W1 Wiper Terminal W of RDAC1, ADDR (RDAC1) = 0x0.
8 B1 Terminal B of RDAC1.
9 B2 Terminal B of RDAC2.
10 W2 Wiper Terminal W of RDAC2, ADDR (RDAC2) = 0x1.
11 A2 Terminal A of RDAC2.
12 VDD Positive Power Supply.
13 WP Write Protect. When active low, WP prevents any changes to the present register contents, except PR, Command
Instruction 1, and Command Instruction 8, which refresh the RDACx register from EEMEM. Execute an NOP instruction
(Command Instruction 0) before returning WP to logic high.
14 PR Hardware Override Preset. Refreshes the scratch pad register with current contents of the EEMEMx register. Factory
default loads Midscale 0x80 until EEMEMx is loaded with a new value by the user (PR is activated at the logic high
transition).
15 CS Serial Register Chip Select, Active Low. Serial register operation takes place when CS returns to logic high.
16 RDY Ready. This active-high, open-drain output requires a pull-up resistor. Identifies completion of Command Instruction 2,
Command Instruction 3, Command Instruction 8, Command Instruction 9, Command Instruction 10, and PR.
Data Sheet AD5232
Rev. B | Page 9 of 24
TYPICAL PERFORMANCE CHARACTERISTICS
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
–0.25
–0.50
–0.75
–1.00
–1.25
–1.50
–1.75
–2.00
0 64 128 192 256
DIGITAL CODE
INL ERROR (LSB)
02618-005
V
DD
= 2.7V
V
SS
= 0V
INL T
A
= –40°C
INL T
A
= +85°C
INL T
A
= +25°C
Figure 5. INL vs. Code; TA = −40°C, +25°C, +85°C Overlay
2.00
1.75
1.50
1.25
1.00
0.75
0.50
0.25
0
–0.25
–0.50
–0.75
–1.00
–1.25
–1.50
–1.75
–2.00
0 64 128 192 256
DIGITAL CODE
DNL ERROR (LSB)
02618-006
V
DD
= 2.7V
V
SS
= 0V
DNL T
A
= –40°C
DNL T
A
= +85°C
DNL T
A
= +25°C
Figure 6. DNL vs. Code; TA = −40°C, +25°C, +85°C Overlay
0.20
0.15
0.10
0.05
0
–0.05
–0.10
–0.15
–0.20
0 32 64 96 128 160 192 224 256
CODE (Decimal)
R-DNL (LSB)
02618-007
V
DD
= 5.5V
V
SS
= 0V
T
A
= 25°C
Figure 7. R-DNL vs. Code; RAB = 10 kΩ, 50 kΩ, 100 kΩ Overlay
2000
1500
1000
500
0
0 32 64 96 128 160 192 224 256
CODE (Decimal)
RHEOSTAT MODE TEMPCO (ppm/°C)
02618-008
V
DD
= 5V
T
A
= –40°C/+85°C
V
A
= NO CONNECT
R
WB
MEASURED
Figure 8. ΔRWB/ΔT vs. Code; RAB = 10 kΩ, VDD = 5 V
70
60
50
40
30
20
10
0
–10
0 32 64 96 128 160 192 224 256
CODE (Decimal)
POTENTIOMETER MODE TEMPCO (ppm/°C)
02618-009
VDD = 5V
TA = –40°C/+85°C
VA = 2V
VB = 0V
Figure 9. ΔVWB/ΔT vs. Code; RAB = 10 kΩ, VDD = 5 V
1
0.1
0.01
0.001
–50 –35 –20 –5 10
TEMPERATURE (°C)
25 40 55 70 85
I
CM
(µA)
02618-010
V
DD
= +2.5V
V
SS
= –2.5V
V
CM
= 0V
Figure 10. ICM vs. Temperature (See Figure 30)
AD5232 Data Sheet
Rev. B | Page 10 of 24
4
2
0
–50 –35 –20 –5 10
TEMPERATURE (°C)
25 40 55 70 85
I
DD
(µA)
02618-011
V
DD
= 5.5V
V
DD
= 2.7V
Figure 11. IDD vs. Temperature
02618-012
CH1 5.00V CH2 5.00V
CH3 5.00V CH4 10.00V
M 2.00ms
CS
CLK
SDI
I
DD
2mA/DIV
1
4
3
2
T
Figure 12. IDD vs. Time (Save) Program Mode
02618-013
CH1 5.00V CH2 5.00V
CH3 5.00V CH4 10.00V
M 2.00ms
CS
CLK
SDI
1
4
3
2
T
*
SUPPLY CURRENT RETURNS TO MINIMUM POWER CONSUMPTION
IF COMMAND INSTRUCTION 0 (NOP) IS EXECUTED IMMEDIATELY
AFTER COMMAND INSTRUCTION 1 (READ EEMEM).
I
DD
*
2mA/DIV
Figure 13. IDD vs. Time Read Mode
12
6
0
–6
–12
–18
–24
–30
–36
–42
1k 10k 100k 1M
FREQUENCY (Hz)
GAIN (dB)
02618-014
V
IN
= 100mV rms
V
DD
= +2.5V
V
SS
= –2.5V
R
L
= 1MΩ
T
A
= +25°C
f
–3dB
= 500kHz, R = 10kΩ
f
–3dB
= 45kHz, R = 100kΩ
f
–3dB
= 95kHz, R = 50kΩ
Figure 14. −3 dB Bandwidth vs. Resistance
10
1
0.1
0.01
0.001
10 100 1k 10k 100k
FREQUENCY (Hz)
THD + NOISE (%)
02618-015
V
DD
= 5V
T
A
= 25°C
FILTER = 22kHz
R
AB
= 10kΩ
R
AB
= 50kΩ, 100kΩ
Figure 15. Total Harmonic Distortion + Noise vs. Frequency
70
80
90
100
110
60
50
40
30
20
10
0
0 32 64 96 128 160 192 224 256
CODE (Decimal)
RW (Ω)
02618-016
VDD = 2.7V
TA = 25°C
Figure 16. Wiper On Resistance vs. Code
Data Sheet AD5232
Rev. B | Page 11 of 24
0
–6
–12
–18
–24
–30
–36
–42
–48
–54
–60
1k 10k 100k 1M
FREQUENCY (Hz)
GAIN (dB)
02618-017
RAB = 10kΩ
0x80
0x40
0x20
0x10
0x08
0x04
0x02
0x01
VDD = +2.7V
VSS = –2.7V
VA = 100mV rms
TA = 25°C
VA
80
60
40
20
0
1k 10k 100k 1M
FREQUENCY (Hz)
PSRR REJECTION (dB)
02618-020
R
AB
= 100kΩ
R
AB
= 10kΩ
R
AB
= 50kΩ
V
DD
= 5.5V ± 100mV AC
V
SS
= 0V
V
B
= 5V
V
A
= 0V
MEASURE AT V
W
WITH CODE = 0x80
T
A
= 25°C
Figure 17. Gain vs. Frequency vs. Code, RAB = 10 kΩ Figure 20. PSRR vs. Frequency
120
100
80
60
40
20
110 100
FREQUENCY (kHz)
C
TA
ANALOG CROSSTALK REJECTION (dB)
02618-021
R
AB
= 100kΩ
R
AB
= 10kΩ
R
AB
= 50kΩ
V
DD
= V
A2
= +2.75V
V
SS
= V
B2
= –2.75V
V
IN
= +5V
P-P
T
A
= 25°C
0
–6
–12
–18
–24
–30
–36
–42
–48
–54
–60
1k 10k 100k 1M
FREQUENCY (Hz)
GAIN (dB)
02618-018
RAB = 50kΩ
VDD = +2.7V
VSS = –2.7V
VA = 100mV rms
TA = 25°C
VA
0x80
0x40
0x20
0x10
0x08
0x04
0x02
0x01
Figure 18. Gain vs. Frequency vs. Code, RAB = 50 kΩ Figure 21. Analog Crosstalk vs. Frequency (See Figure 31)
0
–6
–12
–18
–24
–30
–36
–42
–48
–54
–60
1k 10k 100k 1M
FREQUENCY (Hz)
GAIN (dB)
02618-019
RAB = 100kΩ
VDD = +2.7V
VSS = –2.7V
VA = 100mV rms
TA = 25°C
VA
0x80
0x40
0x20
0x10
0x08
0x04
0x02
0x01
Figure 19. Gain vs. Frequency vs. Code, RAB = 100 kΩ
AD5232 Data Sheet
Rev. B | Page 12 of 24
TEST CIRCUITS
Figure 22 to Figure 32 define the test conditions that are used in the Specifications section.
A
W
B
NC
DUT
NC = NO CONNECT
02618-022
I
W
V
MS
Figure 22. Resistor Position Nonlinearity Error (Rheostat Operation; R-INL, R-DNL)
AW
B
DUT
V+
0
2618-023
V
+ = V
DD
1LSB = V+/2
N
V
MS
Figure 23. Potentiometer Divider Nonlinearity Error (INL, DNL)
AW
B
DUT I
W
= V
DD
/R
NOMINAL
02618-024
V
MS1
V
W
R
W
= [V
MS1
– V
MS2
]/I
W
V
MS2
Figure 24. Wiper Resistance
AW
B
V+ = V
DD
± 10%
PSS (%/%) =
~
V
A
V+
02618-025
PSRR (dB) = 20 LOG
∆V
MS
∆V
DD
( )
∆V
MS
%
∆V
DD
%
V
MS
V
DD
Figure 25. Power Supply Sensitivity (PSS, PSRR)
OFFSET BIAS
A
BDUT
W
5V
OP279
02618-026
V
OUT
V
IN
OFFSET
GND
Figure 26. Inverting Gain
OFFSET BIAS
ABDUT
W
5
V
02618-027
V
OUT
V
IN
OFFSET
GND
OP279
Figure 27. Noninverting Gain
A
B
DUT
W
+15
V
OP42
–15V
2.5V
0
2618-028
V
OUT
V
IN
OFFSET
GND
Figure 28. Gain vs. Frequency
+
–
DUT
CODE = 0x00
0.1V
V
SS
TO V
DD
W
B
A
A = NC
02618-029
R
SW
=0.1
V
I
SW
I
SW
Figure 29. Incremental On Resistance
Data Sheet AD5232
Rev. B | Page 13 of 24
DUT W
B
NC
NC
GND
A
NC = NO CONNECT
02618-030
I
CM
V
CM
V
SS
V
DD
Figure 30. Common-Mode Leakage Current
02618-031
A1
RDAC1 RDAC2
W1
NC
B1
A2
W2
B2
C
TA
= 20 LOG [V
OUT
/V
IN
]
NC = NO CONNECT
V
IN
V
OUT
V
SS
V
DD
Figure 31. Analog Crosstalk
02618-032
200µA I
OL
200µA I
OH
V
OH
(MIN)
OR
V
OL
(MAX)
TO OUTPUT
PIN C
L
50pF
NOTES
1. THE DIODE BRIDGE TEST CIRCUIT IS EQUIVALENT TO
THE APPLICATION CIRCUIT WITH R
PULL-UP
OF 2.2kΩ.
Figure 32. Load Circuit for Measuring VOH and VOL
AD5232 Data Sheet
Rev. B | Page 14 of 24
THEORY OF OPERATION
The AD5232 digital potentiometer is designed to operate as a
true variable resistor replacement device for analog signals that
remain within the terminal voltage range of VSS < VTERM < VDD.
The basic voltage range is limited to a |VDD − VSS| < 5.5 V. The
digital potentiometer wiper position is determined by the RDACx
register contents. The RDACx register acts as a scratch pad register,
allowing as many value changes as necessary to place the poten-
tiometer wiper in the correct position. The scratch pad register
can be programmed with any position value using the standard
SPI serial interface mode by loading the complete representative
data-word. When a desirable position is found, this value can be
saved into a corresponding EEMEMx register. Thereafter, the wiper
position is always set at that position for any future on-off-on
power supply sequence. The EEMEM save process takes approx-
imately 25 ms. During this time, the shift register is locked,
preventing any changes from taking place. The RDY pin indicates
the completion of this EEMEM save.
SCRATCH PAD AND EEMEM PROGRAMMING
The scratch pad register (RDACx register) directly controls the
position of the digital potentiometer wiper. When the scratch
pad register is loaded with all 0s, the wiper is connected to
Terminal B of the variable resistor. When the scratch pad register
is loaded with midscale code (1/2 of full-scale position), the wiper
is connected to the middle of the variable resistor. When the
scratch pad is loaded with full-scale code, which is all 1s, the
wiper connects to Terminal A. Because the scratch pad register
is a standard logic register, there is no restriction on the number
of changes allowed. The EEMEMx registers have a program
erase/write cycle limitation that is described in the Flash/EEMEM
Reliability section.
BASIC OPERATION
The basic mode of setting the variable resistor wiper position
(by programming the scratch pad register) is accomplished by
loading the serial data input register with Command Instruc-
tion 11, which includes the desired wiper position data. When
the desired wiper position is found, the user loads the serial
data input register with Command Instruction 2, which copies
the desired wiper position data into the corresponding non-
volatile EEMEMx register. After 25 ms, the wiper position is
permanently stored in the corresponding nonvolatile EEMEM
location. Table 6 provides an application programming example
listing the sequence of serial data input (SDI) words and the
corresponding serial data output appearing at the serial data
output (SDO) pin in hexadecimal format.
At system power-on, the scratch pad register is refreshed with
the last value saved in the EEMEMx register. The factory preset
EEMEM value is midscale. The scratch pad (wiper) register can
be refreshed with the current contents of the nonvolatile EEMEMx
register under hardware control by pulsing the PR pin.
The application programming example shown in Table 6 lists
two digital potentiometers set to independent data values. The
wiper positions are then saved in the corresponding nonvolatile
EEMEMx registers.
Table 6. Application Programming Example
SDI SDO Action
0xB040 0xXXXX1 Loads 0x40 data into the RDAC1 register;
Wiper W1 moves to 1/4 full-scale position.
0x20XX1 0xB040 Saves a copy of the RDAC1 register contents
into the corresponding EEMEM1 register.
0xB180 0x20XX1 Loads 0x80 data into the RDAC2 register;
Wiper W2 moves to 1/2 full-scale position.
0x21XX1 0xB180 Saves a copy of the RDAC2 register contents
into the corresponding EEMEM2 register.
1 X = don’t care.
Note that the PR pulse first sets the wiper at midscale when it is
brought to Logic 0. Then, on the positive transition to logic high,
it reloads the DAC wiper register with the contents of EEMEMx.
Many additional advanced programming commands are avail-
able to simplify the variable resistor adjustment process.
For example, the wiper position can be changed, one step at
a time, by using the software controlled increment/decrement
command instructions. The wiper position can be also be changed,
6 dB at a time, by using the shift left/right command instructions.
After an increment, decrement, or shift command instruction is
loaded into the shift register, subsequent CS strobes repeat this
command instruction. This is useful for push-button control appli-
cations (see the section). The SDO pin
is available for daisy chaining and for readout of the internal
register contents. The serial input data register uses a 16-bit
instruction/address/data-word.
Advanced Control Modes
EEMEM PROTECTION
The write protect (WP) pin disables any changes of the scratch
pad register contents, regardless of the software commands,
except that the EEMEM setting can be refreshed using Instruction
Command 8 and PR. Therefore, the WP pin provides a hardware
EEMEM protection feature. Execute an NOP command (Com-
mand Instruction 0) before returning WP to logic high.
DIGITAL INPUT/OUTPUT CONFIGURATION
All digital inputs are ESD protected, high input impedance that
can be driven directly from most digital sources. The PR and WP
pins, which are active at logic low, must be biased to VDD if they
are not being used. No internal pull-up resistors are present on
any digital input pins.
The SDO and RDY pins are open-drain, digital outputs when pull-
up resistors are needed, but only if these functions are in use.
A resistor value in the range of 1 kΩ to 10 kΩ optimizes the power
and switching speed trade-off.
Data Sheet AD5232
Rev. B | Page 15 of 24
SERIAL DATA INTERFACE
The AD5232 contains a 4-wire SPI-compatible digital interface
(SDI, SDO, CS, and CLK) and uses a 16-bit serial data-word
that is loaded MSB first. The format of the SPI-compatible word
is shown in . The chip select (Tabl e 7 CS) pin must be held low
until the complete data-word is loaded into the SDI pin. When
CS returns high, the serial data-word is decoded according to
the instructions in . The command bits (Cx) control the
operation of the digital potentiometer. The address bits (Ax)
determine which register is activated. The data bits (Dx) are the
values that are loaded into the decoded register. provides
an address map of the EEMEM locations. The last command
instruction executed prior to a period of no programming activity
should be the no operation (NOP) command instruction (Com-
mand Instruction 0). This instruction places the internal logic
circuitry in a minimum power dissipation state.
Table 8
Table 9
0
2618-033
COUNTER
CLK
SDI
5V
SDO
GND
PR WP
AD5232
CS
VALID
COMMAND
SERIAL
REGISTER
COMMAND
PROCESSOR
AND ADDRESS
DECODE
R
PULL-UP
Figure 33. Equivalent Digital Input/Output Logic
The AD5232 has an internal counter that counts a multiple of
16 bits (per frame) for proper operation. For example, the AD5232
works with a 16-bit or 32-bit word, but it cannot work properly
with a 15-bit or 17-bit word. To prevent data from mislocking
(due to noise, for example), the counter resets if the count is not
a multiple of 4 when CS goes high, but the data remains in the
register if the count is a multiple of 4. In addition, the AD5232 has
a subtle feature whereby, if CS is pulsed without CLK and SDI,
the part repeats the previous command (except during power-
up). As a result, care must be taken to ensure that no excessive
noise exists in the CLK or CS line that may alter the effective
number of bits pattern.
The equivalent serial data input and output logic is shown in
Figure 33. The open-drain SDO is disabled whenever CS is logic
high. The SPI interface can be used in two slave modes: CPHA = 1,
CPOL = 1; and CPHA = 0, CPOL = 0. CPHA and CPOL refer
to the control bits that dictate SPI timing in the following micro-
processors and MicroConverter® devices: the and the
, the M68HC11, and the MC68HC16R1/916R1. ESD
protection of the digital inputs is shown in and .
ADuC812
ADuC824
Figure 34 Figure 35
GND
02618-034
INPUTS
300Ω
V
DD
LOGIC
PINS
AD5232
Figure 34. Equivalent ESD Digital Input Protection
GND
02618-035
INPUTS
300Ω
V
DD
WP
AD5232
Figure 35. Equivalent WP Input Protection
DAISY-CHAINING OPERATION
The SDO pin serves two purposes: it can be used to read back
the contents of the wiper setting and the EEMEM using Command
Instruction 9 and Command Instruction 10 (see Table 8), or it can
be used for daisy-chaining multiple devices.The remaining com-
mand instructions are valid for daisy-chaining multiple devices in
simultaneous operations. Daisy chaining minimizes the number
of port pins required from the controlling IC (see Figure 36).
The SDO pin contains an open-drain N-channel FET that requires
a pull-up resistor if this function is used. As shown in Figure 36,
users must tie the SDO pin of one package to the SDI pin of the
next package. Users may need to increase the clock period because
the pull-up resistor and the capacitive loading at the SDO-to-SDI
interface may require additional time delay between subsequent
packages. If two AD5232s are daisy-chained, 32 bits of data are
required. The first 16 bits go to U2, and the second 16 bits with
the same format go to U1. The 16 bits are formatted to contain
the 4-bit instruction, followed by the 4-bit address, followed by
the eight bits of data. The CS pin should be kept low until all 32 bits
are locked into their respective serial registers. The CS pin is then
pulled high to complete the operation.
SDI SDO
CLK CLK
SDI SDO
AD5232
U1
AD5232
U2
02618-036
CS
CS
V
DD
MicroConverter
R
P
2.2kΩ
Figure 36. Daisy-Chain Configuration Using the SDO
AD5232 Data Sheet
Rev. B | Page 16 of 24
Command bits are identified as Cx, address bits are Ax, and
data bits are Dx. The command instruction codes are defined
in Table 8. The SDO output shifts out the last eight bits of data
clocked into the serial register for daisy-chain operation, with
the following exception: after Command Instruction 9 or Com-
mand Instruction 10, the selected internal register data is present
in Data Byte 0. The command instructions following Command
Instruction 9 and Command Instruction 10 must be full 16-bit
data-words to completely clock out the contents of the serial
register. The RDACx register is a volatile scratch pad register
that is refreshed at power-on from the corresponding nonvol-
atile EEMEMx register. The increment, decrement, and shift
command instructions ignore the contents of Data Byte 0 in the
shift register. Execution of the operation noted in Table 8 occurs
when the CS strobe returns to logic high. Execution of an NOP
instruction minimizes power dissipation.
Table 7. 16-Bit Serial Data Word
MSB LSB
B15 B14 B13 B12 B11 B10 B9 B8 B7 B6 B5 B4 B3 B2 B1 B0
C3 C2 C1 C0 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0
Table 8. Instruction/Operation Truth Table
Instruction Byte 1 Data Byte 0
B15 B8 B7 B0
Comm.
Inst.
No. C3 C2 C1 C0 A3 A2 A1 A0 D7 D6 D5 D4 D3 D2 D1 D0 Operation
0 0 0 0 0 X X X X X X X X X X X X No operation (NOP). Do nothing.
1 0 0 0 1 0 0 0 A0 X X X X X X X X Write contents of EEMEM (A0) to
the RDAC (A0) register. This com-
mand leaves the device in the read
program power state. To return
the part to the idle state, perform
Command Instruction 0 (NOP).
2 0 0 1 0 0 0 0 A0 X X X X X X X X Save wiper setting. Write
contents of RDAC (ADDR) to
EEMEM (A0).
3 0 0 1 1 ADDR D7 D6 D5 D4 D3 D2 D1 D0 Write contents of Serial Register
Data Byte 0 to EEMEM (ADDR).
4 0 1 0 0 0 0 0 A0 X X X X X X X X Decrement 6 dB right shift con-
tents of RDAC (A0). Stops at all 0s.
5 0 1 0 1 X X X X X X X X X X X X Decrement all 6 dB right shift
contents of all RDAC registers.
Stops at all 0s.
6 0 1 1 0 0 0 0 A0 X X X X X X X X Decrement contents of RDAC (A0)
by 1. Stops at all 0s.
7 0 1 1 1 X X X X X X X X X X X X Decrement contents of all RDAC
registers by 1. Stops at all 0s.
8 1 0 0 0 0 0 0 0 X X X X X X X X Reset. Load all RDACs with their
corresponding, previously saved
EEMEM values.
9 1 0 0 1 ADDR X X X X X X X X Write contents of EEMEM(ADDR)
to Serial Register Data Byte 0.
10 1 0 1 0 0 0 0 A0 X X X X X X X X Write contents of RDAC (A0) to
Serial Register Data Byte 0.
11 1 0 1 1 0 0 0 A0 D7 D6 D5 D4 D3 D2 D1 D0 Write contents of Serial Register
Data Byte 0 to RDAC (A0).
12 1 1 0 0 0 0 0 A0 X X X X X X X X Increment 6 dB left shift contents
of RDAC (A0). Stops at all 1s.
13 1 1 0 1 X X X X X X X X X X X X Increment all 6 dB left shift
contents of all RDAC registers.
Stops at all 1s.
14 1 1 1 0 0 0 0 A0 X X X X X X X X Increment contents of RDAC (A0)
by 1. Stops at all 1s.
15 1 1 1 1 X X X X X X X X X X X X Increment contents of all RDAC
registers by 1. Stops at all 1s.
Data Sheet AD5232
Rev. B | Page 17 of 24
ADVANCED CONTROL MODES
The AD5232 digital potentiometer contains a set of user program-
ming features to address the wide variety of applications avail-
able to these universal adjustment devices. Key programming
features include the following:
• Independently programmable read and write to all
registers
• Simultaneous refresh of all RDAC wiper registers from
corresponding internal EEMEM registers
• Increment and decrement command instructions for each
RDAC wiper register
• Left and right bit shift of all RDAC wiper registers to
achieve 6 dB level changes
• Nonvolatile storage of the present scratch pad RDACx
register values into the corresponding EEMEMx register
• Fourteen extra bytes of user-addressable, electrical erasable
memory
Increment and Decrement Commands
The increment and decrement command instructions (Command
Instruction 14, Command Instruction 15, Command Instruction 6,
and Command Instruction 7) are useful for the basic servo adjust-
ment application. These commands simplify microcontroller
software coding by eliminating the need to perform a readback
of the current wiper position and then add a 1 to the register
contents using the microcontroller adder. The microcontroller
sends an increment command instruction (Command Instruc-
tion 14) to the digital potentiometer, which automatically moves
the wiper to the next resistance segment position. The master
increment command instruction (Command Instruction 15)
moves all potentiometer wipers by one position from their present
position to the next resistor segment position. The direction of
movement is referenced to Terminal B. Thus, each Command
Instruction 15 moves the wiper tap position farther from
Terminal B.
Logarithmic Taper Mode Adjustment
Programming instructions allow decrement and increment wiper
position control by an individual potentiometer or in a ganged
potentiometer arrangement, where both wiper positions are
changed at the same time. These settings are activated by the
6 dB decrement and 6 dB increment command instructions
(Command Instruction 4 and Command Instruction 5, and
Command Instruction 12 and Command Instruction 13,
respectively). For example, starting with the wiper connected
to Terminal B, executing nine increment instructions (Command
Instruction 12) moves the wiper in 6 dB steps from the 0% of the
RBA (Terminal B) position to the 100% of the RBA position of the
AD5232 8-bit potentiometer. The 6 dB increment instruction
doubles the value of the RDACx register contents each time the
command is executed. When the wiper position is greater than
midscale, the last 6 dB increment command instruction causes
the wiper to go to the full-scale 255 code position. Any addi-
tional 6 dB instruction does not change the wiper position from
full scale (RDACx register code = 255).
Figure 37 illustrates the operation of the 6 dB shifting function
on the individual RDACx register data bits for the 8-bit AD5232
example. Each line going down the table represents a successive
shift operation. Note that the Left Shift 12 and Left Shift 13 com-
mand instructions were modified so that if the data in the RDACx
register is equal to 0 and is left shifted, it is then set to Code 1.
In addition, the left shift commands were modified so that if the
data in the RDAC register is greater than or equal to midscale and
is left shifted, the data is then set to full scale. This makes the left
shift function as close to ideally logarithmic as possible.
The Right Shift 4 and Right Shift 5 command instructions are
ideal only if the LSB is 0 (that is, ideal logarithmic, with no error).
If the LSB is a 1, the right shift function generates a linear half-
LSB error that translates to a code-dependent logarithmic error
for odd codes only, as shown in Figure 38. The plot shows the
errors of the odd codes.
LEFT SHIFT
0000 0000
0000 0001
0000 0010
0000 0100
0000 1000
0001 0000
0010 0000
0100 0000
1000 0000
1111 1111
1111 1111
RIGHT SHIFT
1111 1111
0111 1111
0011 1111
0001 1111
0000 0111
0000 0011
0000 0001
0000 0000
0000 0000
0000 0000
0000 0000
LEFT SHIFT
(+6dB)
RIGHT SHIFT
(–6dB)
02618-037
Figure 37. Detail Left and Right Shift Function
Actual conformance to a logarithmic curve between the data
contents in the RDACx register and the wiper position for each
Right Shift 4 and Right Shift 5 command execution contains an
error only for the odd codes. The even codes are ideal, with the
exception of zero right shift or greater than half-scale left shift.
Figure 38 shows plots of Log_Error, that is, 20 × log10
(error/code). For example, Code 3 Log_Error = 20 × log10 (0.5/3)
= −15.56 dB, which is the worst case. The plot of Log_Error is
more signifi-cant at the lower codes.
0
–10
–20
–30
–40
–50
–60
0 20 40 60 80 100 120 140 160 180 200 220 240 260
CODE, FROM 1 TO 255 BY 2
GAIN (dB)
02618-038
LOG_ERROR (CODE) FOR 8-BIT
Figure 38. Plot of Log_Error Conformance for Odd Codes Only
(Even Codes Are Ideal)
AD5232 Data Sheet
Rev. B | Page 18 of 24
USING ADDITIONAL INTERNAL, NONVOLATILE
EEMEM
The AD5232 contains additional internal user storage registers
(EEMEM) for saving constants and other 8-bit data. Table 9
provides an address map of the internal nonvolatile storage
registers, which are shown in the functional block diagram as
EEMEM1, EEMEM2, and bytes of USER EEMEM.
Note the following about EEMEM function:
• RDAC data stored in EEMEM locations are transferred to
their corresponding RDACx register at power-on or when
Command Instruction 1 and Command Instruction 8 are
executed.
• USERx refers to internal nonvolatile EEMEM registers that are
available to store and retrieve constants by using Command
Instruction 3 and Command Instruction 9, respectively.
• The EEMEM locations are one byte each (eight bits).
• Execution of Command Instruction 1 leaves the device in
the read mode power consumption state. When the final
Command Instruction 1 is executed, the user should perform
an NOP (Command Instruction 0) to return the device to
the low power idle state.
Table 9. EEMEM Address Map
EEMEM Address
(ADDR)
EEMEM Contents of Each Device
EEMEM (ADDR)
0000 RDAC1
0001 RDAC2
0010 USER 1
0011 USER 2
0100 USER 3
0101 USER 4
*** ***
1111 USER 14
TERMINAL VOLTAGE OPERATING RANGE
The positive VDD and negative VSS power supply of the digital
potentiometer defines the boundary conditions for proper
3-terminal programmable resistance operations. Signals present
on Terminal A, Terminal B, and Wiper Terminal W that exce ed
VDD or VSS are clamped by a forward biased diode (see Figure 39).
The ground pin of the AD5232 device is used primarily as
a digital ground reference that needs to be tied to the common
ground of the PCB. The digital input logic signals to the AD5232
must be referenced to the ground (GND) pin of the device and
satisfy the minimum input logic high level and the maximum
input logic low level that are defined in the Specifications section.
An internal level shift circuit between the digital interface and
the wiper switch control ensures that the common-mode voltage
range of the three terminals, Terminal A, Terminal B, and
Wiper Terminal W, extends from VSS to VDD.
V
SS
V
DD
A
W
B
02618-039
Figure 39. Maximum Terminal Voltages Set by VDD and VSS
Table 10. RDAC and Digital Register Address Map
Register Address (ADDR) Name of Register1
0000 RDAC1
0001 RDAC2
1 The RDACx registers contain data that determines the position of the
variable resistor wiper.
DETAILED POTENTIOMETER OPERATION
The actual structure of the RDACx is designed to emulate the
performance of a mechanical potentiometer. The RDACx contains
multiple strings of connected resistor segments, with an array of
analog switches that act as the wiper connection to several points
along the resistor array. The number of points is equal to the
resolution of the device. For example, the AD5232 has 256 con-
nection points, allowing it to provide better than 0.5% setability
resolution. Figure 40 provides an equivalent diagram of the con-
nections between the three terminals that make up one channel of
the RDACx. The SWA and SWB switches are always on, whereas
only one of the SW(0) to SW(2N–1) switches is on at a time,
depending on the resistance step decoded from the data bits. The
resistance contributed by RW must be accounted for in the output
resistance.
B
R
S
R
S
A
W
R
S
= R
AB
/2
N
R
S
02618-040
RDAC
WIPER
REGISTER
AND
DECODER
NOTES
1. DIGITAL CIRCUITRY
OMITTED FOR CLARITY
SW
A
SW
B
SW(2
N–
1)
SW(2
N–
2)
SW(1)
SW(2)
Figure 40. Equivalent RDAC Structure
Data Sheet AD5232
Rev. B | Page 19 of 24
Table 11. Nominal Individual Segment Resistor Values (Ω)
Segmented Resistor Size
for RAB End-to-End Values
Device
Resolution
10 kΩ
Version
50 kΩ
Version
100 kΩ
Version
8-Bit 78.10 390.5 781.0
PROGRAMMING THE VARIABLE RESISTOR
Rheostat Operation
The nominal resistances of the RDACx between Terminal A and
Terminal B are available with values of 10 kΩ, 50 kΩ, and 100 kΩ.
The final digits of the part number determine the nominal
resistance value; for example, 10 kΩ = 10; 100 kΩ = 100. The
nominal resistance (RAB) of the AD5232 VR has 256 contact
points accessed by Wiper Terminal W, plus the Terminal B contact.
The 8-bit data-word in the RDACx latch is decoded to select
one of the 256 possible settings.
The general transfer equation, which determines the digitally
programmed output resistance between Wx and Bx, is
W
AB
WB RR
D
DR +×=
256
)( (1)
where:
D is the decimal equivalent of the data contained in the RDACx
register.
RAB is the nominal resistance between Terminal A and Terminal B.
RW is the wiper resistance.
Table 12 lists the output resistance values that are set for the
RDACx latch codes shown for 8-bit, 10 kΩ potentiometers.
Table 12. Nominal Resistance Value at Selected Codes for
RAB = 10 kΩ
D (Dec) RWB (D) (Ω) Output State
255 10011 Full scale
128 5050 Midscale
1 89 1 LSB
0 50 Zero scale1 (wiper contact resistance)
1 Note that in the zero-scale condition, a finite wiper resistance of 50 Ω is
present. Care should be taken to limit the current flow between Wx and Bx
in this state to a maximum continuous value of 2 mA to avoid degradation
or possible destruction of the internal switch metallization. Intermittent
current operation to 20 mA is allowed.
Like the mechanical potentiometer that the RDACx replaces,
the AD5232 parts are totally symmetrical. The resistance between
the Wiper Termina l W and Terminal A also produces a digitally
controlled resistance, RWA . Figure 41 shows the symmetrical
programmability of the various terminal connections.
100
75
50
25
0
0 64 128 192 258
CODE (Decimal)
PERCENT OF NOMINAL
END-TO-END RESISTANCE (% R
AB
)
02618-041
R
WB
R
WA
Figure 41. Symmetrical RDAC Operation
When these terminals are used, Terminal B should be tied to
the wiper. Setting the resistance value for RWA starts at a maximum
value of resistance and decreases as the data loaded in the latch
is increased in value. The general transfer equation for this
operation is
W
ABWA RR
D
DR +×
−
=
256
256
)( (2)
where:
D is the decimal equivalent of the data contained in the RDAC
register.
RAB is the nominal resistance between Terminal A and Terminal B.
RW is the wiper resistance.
Table 13 lists the output resistance values that are set for the
RDACx latch codes shown for 8-bit, 10 kΩ potentiometers.
Table 13. Nominal Resistance Value at Selected Codes for
RAB = 10 kΩ
D (Dec) RWA (D) (Ω) Output State
255 89 Full scale
128 5050 Midscale
1 10011 1 LSB
0 10050 Zero scale
The multichannel AD5232 has a ±0.2% typical distribution of
internal channel-to-channel RBA match. Device-to-device matching
is dependent on process lot and exhibits a −40% to +20% variation.
The change in RBA with temperature has a 600 ppm/°C temperature
coefficient.
AD5232 Data Sheet
Rev. B | Page 20 of 24
PROGRAMMING THE POTENTIOMETER DIVIDER
Voltage Output Operation
The digital potentiometer easily generates an output voltage pro-
portional to the input voltage applied to a given terminal. For
example, connecting Terminal A to 5 V and Terminal B to GND
produces an output voltage at the wiper that can be any value
from 0 V to 5 V. Each LSB of voltage is equal to the voltage
applied across Terminal A to Terminal B, divided by the 2N
position resolution of the potentiometer divider. The general
equation defining the output voltage with respect to ground for
any given input voltage applied to Terminal A to Terminal B is
B
AB
WA
A
AB
WB
WV
R
DR
V
R
DR
DV ×+×= )(
)(
)( (3)
where RWB(D) can be obtained from Equation 1 and RWA(D)
can be obtained from Equation 2.
Operation of the digital potentiometer in the divider mode
results in more accurate operation over temperature. Here the
output voltage is dependent on the ratio of the internal resistors,
not the absolute value; therefore, the drift improves to 15 ppm/°C.
There is no voltage polarity restriction between Terminal A,
Terminal B, and Wiper Terminal W as long as the terminal voltage
(VTERM) stays within VSS < VTERM < VDD.
OPERATION FROM DUAL SUPPLIES
The AD5232 can be operated from dual supplies, enabling
control of ground-referenced ac signals (see Figure 42 for
a typical circuit connection).
AD5232
V
SS
GND
SDI
CLK
SS
SCLK
MOSI
GND
V
DD
±2V p-p
±1V p-p
V
DD
+2.5
V
–2.5V
CS
02618-042
MicroConverter
Figure 42. Operation from Dual Supplies
The internal parasitic capacitances and the external capacitive
loads dominate the ac characteristics of the RDACs. When
configured as a potentiometer divider, the −3 dB bandwidth of
the AD5232BRU10 (10 kΩ resistor) measures 500 kHz at half
scale. Figure 14 provides the large signal BODE plot character-
istics of the three resistor versions: 10 kΩ, 50 kΩ, and 100 kΩ (see
Figure 43 for a parasitic simulation model of the RDAC circuit).
A
W
02618-043
B
RDAC
10kΩ
C
A
45pF
C
B
45pF
C
W
60pF
Figure 43. RDAC Circuit Simulation Model for RDACx = 10 kΩ
The following code provides a macro model net list for the
10 kΩ RDAC:
.PARAM DW=255, RDAC=10E3
*
.SUBCKT DPOT (A,W,B)
*
CA A 0 {45E-12}
RAW A W {(1-DW/256)*RDAC+50}
CW W 0 60E-12
RBW W B {DW/256*RDAC+50}
CB B 0 {45E-12}
*
.ENDS DPOT
APPLICATION PROGRAMMING EXAMPLES
The command sequence examples shown in Table 14 to Table 18
have been developed to illustrate a typical sequence of events
for the various features of the AD5232 nonvolatile digital poten-
tiometer. Table 14 illustrates setting two digital potentiometers
to independent data values.
Table 14.
SDI SDO Action
0xB140 0xXXXX Loads 0x40 data into the RDAC2 register;
Wiper W2 moves to 1/4 full-scale position.
0xB080 0xB140 Loads 0x80 data into the RDAC1 register;
Wiper W1 moves to 1/2 full-scale position.
Table 15 illustrates the active trimming of one potentiometer,
followed by a save to nonvolatile memory (PCB calibrate).
Table 15.
SDI SDO Action
0xB040 0xXXXX Loads 0x40 data into the RDAC1 register;
Wiper W1 moves to 1/4 full-scale position.
0xE0XX 0xB040 Increments the RDAC1 register by 1, to 0x41;
Wiper W1 moves one resistor segment
away from Terminal B.
0xE0XX 0xE0XX Increments the RDAC1 register by 1, to 0x42;
Wiper W1 moves one more resistor segment
away from Terminal B. Continue until
desired the wiper position is reached.
0x20XX 0xE0XX Saves the RDAC1 register data into the
corresponding nonvolatile EEMEM1
memory: ADDR = 0x0.
Data Sheet AD5232
Rev. B | Page 21 of 24
During reliability qualification, Flash/EE memory is cycled
from 0x00 to 0xFF until a first fail is recorded, signifying the
endurance limit of the on-chip Flash/EE memory.
Table 16 illustrates using the left shift-by-one to change circuit
gain in 6 dB steps.
Table 16.
SDI As indicated in the Specifications section, the AD5232 Flash/EE
memory endurance qualification has been carried out in accor-
dance with JEDEC Std. 22, Method A117 over the industrial
temperature range of −40°C to +85°C. The results allow the
specification of a minimum endurance figure over supply and
temperature of 100,000 cycles, with an endurance figure of
700,000 cycles being typical of operation at 25°C.
SDO Action
0xC1XX 0xXXXX Moves Wiper W2 to double the present
data value contained in the RDAC2 register
in the direction of Terminal A.
0xC1XX 0xXXXX Moves Wiper W2 to double the present
data value contained in the RDAC2 register
in the direction of Terminal A.
Table 17 illustrates storing additional data in nonvolatile memory.
Table 17.
SDI
Retention quantifies the ability of the Flash/EE memory to retain its
programmed data over time. Again, the AD5232 has been qualified
in accordance with the formal JEDEC Retention Lifetime Specifi-
cation (A117) at a specific junction temperature of TJ = 55°C. As
part of this qualification procedure, the Flash/EE memory is cycled
to its specified endurance limit, as described previously, before
data retention is characterized. This means that the Flash/EE
memory is guaranteed to retain its data for its full specified
retention lifetime every time the Flash/EE memory is repro-
grammed. It should also be noted that retention lifetime, based
on an activation energy of 0.6 eV, derates with TJ, as shown in
Figure 44.
SDO Action
0x3280 0xXXXX
Stores 0x80 data in spare EEMEM location,
USER1.
0x3340 0xXXXX
Stores 0x40 data in spare EEMEM location,
USER2.
Table 18 illustrates reading back data from various memory
locations.
Table 18.
SDI SDO Action
0x94XX
300
250
200
150
100
50
0
40 50 60 70 80 90 100 110
T
J
JUNCTION TEMPERATURE (°C)
RETENTION (Years)
02618-044
ADI TYPICAL PERFORMANCE
AT T
J
= 55°C
0xXXXX
Prepares data read from USER3 location.
(USER3 is already loaded with 0x80.)
0x00XX 0xXX80
Instruction 0 (NOP) sends 16-bit word out
of SDO where the last eight bits contain
the contents of USER3 location. The NOP
command ensures that the device returns
to the idle power dissipation state.
EQUIPMENT CUSTOMER START-UP SEQUENCE
FOR A PCB CALIBRATED UNIT WITH PROTECTED
SETTINGS
1. For the PCB setting, tie WP to GND to prevent changes in
the PCB wiper set position.
2. Set power VDD and VSS with respect to GND.
3. As an optional step, strobe the PR pin to ensure full power-
on preset of the wiper register with EEMEM contents in
unpredictable supply sequencing environments.
Figure 44. Flash/EE Memory Data Retention
EVALUATION BOARD
Analog Devices, Inc., offers a user-friendly EVAL-AD5232-10EBZ
evaluation kit that can be controlled by a personal computer
through a printer port. The driving program is self-contained;
no programming languages or skills are needed.
FLASH/EEMEM RELIABILITY
The Flash/EE memory array on the AD5232 is fully qualified
for two key Flash/EE memory characteristics: namely, Flash/EE
memory cycling endurance and Flash/EE memory data retention.
Endurance quantifies the ability of the Flash/EE memory to be
cycled through many program, read, and erase cycles. In real
terms, a single endurance cycle is composed of four independent,
sequential events. These events are defined as follows:
1. Initial page erase sequence
2. Read/verify sequence
3. Byte program sequence
4. Second read/verify sequence
AD5232 Data Sheet
Rev. B | Page 22 of 24
OUTLINE DIMENSIONS
16 9
81
PIN 1
SEATING
PLANE
8°
0°
4.50
4.40
4.30
6.40
BSC
5.10
5.00
4.90
0.65
BSC
0.15
0.05
1.20
MAX
0.20
0.09 0.75
0.60
0.45
0.30
0.19
COPLANARITY
0.10
COMPLIANT TO JEDEC STANDARDS MO-153-AB
Figure 45. 16-Lead Thin Shrink Small Outline Package [TSSOP]
(RU-16)
Dimensions shown in millimeters
ORDERING GUIDE
Model1
Number of
Channels
End-to-End RAB
(kΩ)
Temperature
Range
Package
Description
Package
Option
Ordering
Quantity Branding2
AD5232BRU10 2 10 −40°C to +85°C 16-Lead TSSOP RU-16 96 5232B10
AD5232BRU10-REEL7 2 10 −40°C to +85°C 16-Lead TSSOP RU-16 1,000 5232B10
AD5232BRUZ10 2 10 −40°C to +85°C 16-Lead TSSOP RU-16 96 5232B10
AD5232BRUZ10-REEL7 2 10 −40°C to +85°C 16-Lead TSSOP RU-16 1,000 5232B10
AD5232BRU50 2 50 −40°C to +85°C 16-Lead TSSOP RU-16 96 5232B50
AD5232BRU50-REEL7 2 50 −40°C to +85°C 16-Lead TSSOP RU-16 1,000 5232B50
AD5232BRUZ50 2 50 −40°C to +85°C 16-Lead TSSOP RU-16 96 5232B50
AD5232BRUZ50-REEL7 2 50 −40°C to +85°C 16-Lead TSSOP RU-16 1,000 5232B50
AD5232BRU100 2 100 −40°C to +85°C 16-Lead TSSOP RU-16 96 5232BC
AD5232BRU100-REEL7 2 100 −40°C to +85°C 16-Lead TSSOP RU-16 1,000 5232BC
AD5232BRUZ100 2 100 −40°C to +85°C 16-Lead TSSOP RU-16 96 5232BC
AD5232BRUZ100-RL7 2 100 −40°C to +85°C 16-Lead TSSOP RU-16 1,000 5232BC
EVAL-AD5232-10EBZ 10 Evaluation Board 1
1 Z = RoHS Compliant Part.
2 Line 1 contains the Analog Devices logo, followed by the date code: YYWW. Line 2 contains the model number, followed by the end-to-end resistance value. (Note that
C = 100 kΩ).
OR
Line 1 contains the model number. Line 2 contains the Analog Devices logo, followed by the end-to-end resistance value. Line 3 contains the date code: YYWW.
Data Sheet AD5232
Rev. B | Page 23 of 24
NOTES
AD5232 Data Sheet
Rev. B | Page 24 of 24
NOTES
©2001–2011 Analog Devices, Inc. All rights reserved. Trademarks and
registered trademarks are the property of their respective owners.
D02618-0-9/11(B)