General Purpose Transistors
NPN Silicon
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–323/SC–70 which is
designed for low power surface mount applications.
MAXIMUM RATINGS
Rating Symbol BC846 BC847 BC848 Unit
Collector–Emitter Voltage VCEO 65 45 30 V
Collector–Base Voltage VCBO 80 50 30 V
Emitter–Base V oltage VEBO 6.0 6.0 5.0 V
Collector Current — Continuous IC100 100 100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation FR–5 Board, (1)
TA = 25°CPD150 mW
Thermal Resistance, Junction to Ambient RJA 833 °C/W
Total Device Dissipation PD2.4 mW/°C
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
DEVICE MARKING
BC846AWT1 = 1A; BC846BWT1 = 1B; BC847AWT1 = 1E; BC847BWT1 = 1F;
BC847CWT1 = 1G; BC848AWT1 = 1J; BC848BWT1 = 1K; BC848CWT1 = 1L
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage BC846 Series
(IC = 10 mA) BC847 Series
BC848 Series
V(BR)CEO 65
45
30
—
—
—
—
—
—
V
Collector–Emitter Breakdown Voltage BC846 Series
(IC = 10 µA, VEB = 0) BC847 Series
BC848 Series
V(BR)CES 80
50
30
—
—
—
—
—
—
V
Collector–Base Breakdown Voltage BC846 Series
(IC = 10 A) BC847 Series
BC848 Series
V(BR)CBO 80
50
30
—
—
—
—
—
—
V
Emitter–Base Breakdown Voltage BC846 Series
(IE = 1.0 A) BC847 Series
BC848 Series
V(BR)EBO 6.0
6.0
5.0
—
—
—
—
—
—
V
Collector Cutoff Current (VCB = 30 V)
(VCB = 30 V, TA = 150°C) ICBO —
——
—15
5.0 nA
µA
1. FR–5 = 1.0 x 0.75 x 0.062 in
ON Semiconductor
Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 2 279 Publication Order Number:
BC846AWT1/D
BC846AWT1
Series,
BC847AWT1
Series,
BC848AWT1
Series
CASE 419–02, STYLE 3
SOT–323/SC–70
12
3
COLLECTOR
3
1
BASE
2
EMITTER
BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series
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280
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS
DC Current Gain BC846A, BC847A, BC848A
(IC = 10 µA, VCE = 5.0 V) BC846B, BC847B, BC848B
BC847C, BC848C
(IC = 2.0 mA, VCE = 5.0 V) BC846A, BC847A, BC848A
BC846B, BC847B, BC848B
BC847C, BC848C
hFE —
—
—
110
200
420
90
150
270
180
290
520
—
—
—
220
450
800
—
Collector–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Collector–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VCE(sat) —
——
—0.25
0.6 V
Base–Emitter Saturation Voltage (IC = 10 mA, IB = 0.5 mA)
Base–Emitter Saturation Voltage (IC = 100 mA, IB = 5.0 mA) VBE(sat) —
—0.7
0.9 —
—V
Base–Emitter Voltage (IC = 2.0 mA, VCE = 5.0 V)
Base–Emitter Voltage (IC = 10 mA, VCE = 5.0 V) VBE(on) 580
—660
—700
770 mV
SMALL–SIGNAL CHARACTERISTICS
Current–Gain — Bandwidth Product
(IC = 10 mA, VCE = 5.0 Vdc, f = 100 MHz) fT100 — — MHz
Output Capacitance (VCB = 10 V, f = 1.0 MHz) Cobo — — 4.5 pF
Noise Figure (IC = 0.2 mA, VCE = 5.0 Vdc, RS = 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz) NF — — 10 dB
Figure 13.
BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series
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281
BC847 SERIES & BC848 SERIES
Figure 1. Normalized DC Current Gain
IC, COLLECTOR CURRENT (mAdc)
2.0
Figure 2. “Saturation” and “On” Voltages
IC, COLLECTOR CURRENT (mAdc)
0.2 0.5 1.0 10 20 50
0.2 100
Figure 3. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 4. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
2.0 5.0 200
0.6
0.7
0.8
0.9
1.0
0.5
0
0.2
0.4
0.1
0.3
1.6
1.2
2.0
2.8
2.4
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
hFE, NORMALIZED DC CURRENT GAIN
V, VOLTAGE (VOLTS)
VCE, COLLECTOR-EMITTER VOLTAGE (V)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
1.5
1.0
0.8
0.6
0.4
0.3
0.2 0.5 1.0 10 20 50
2.0 10070
307.05.03.00.70.30.1
0.2 1.0 10 100
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE(on) @ VCE = 10 V
VCE = 10 V
TA = 25°C
-55°C to +125°CTA = 25°C
IC = 50 mA IC = 100 mA
IC = 200 mA
IC =
20 mA
IC =
10 mA
1.0
Figure 5. Capacitances
VR, REVERSE VOLTAGE (VOLTS)
10
Figure 6. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mAdc)
0.4 0.6 1.0 10 20
1.0 2.0 6.0 40
80
100
200
300
400
60
20
40
30
7.0
5.0
3.0
2.0
0.7 1.0 10 202.0 50
307.05.03.00.5
VCE = 10 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
T
0.8 4.0 8.0
TA = 25°C
Cob
Cib
BC846AWT1 Series, BC847AWT1 Series, BC848AWT1 Series
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282
BC846 SERIES
Figure 7. DC Current Gain
IC, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltage
IC, COLLECTOR CURRENT (mA)
0.8
1.0
0.6
0.2
0.4
1.0
2.0
0.1 1.0 10 100
0.2
0.2
0.5
0.2 1.0 10 200
TA = 25°C
VBE(sat) @ IC/IB = 10
VCE(sat) @ IC/IB = 10
VBE @ VCE = 5.0 V
Figure 9. Collector Saturation Region
IB, BASE CURRENT (mA)
Figure 10. Base–Emitter Temperature Coefficient
IC, COLLECTOR CURRENT (mA)
-1.0
1.2
1.6
2.0
0.02 1.0 10
020
0.1
0.4
0.8
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
VB, TEMPERATURE COEFFICIENT (mV/ C)°θ
0.2 2.0 10 200
1.0
TA = 25°C
200 mA
50 mA
IC =
10 mA
hFE, DC CURRENT GAIN (NORMALIZED)
V, VOLTAGE (VOLTS)
VCE = 5 V
TA = 25°C
00.5 2.0 5.0 20 50 100
0.05 0.2 0.5 2.0 5.0
100 mA
20 mA
-1.4
-1.8
-2.2
-2.6
-3.0 0.5 5.0 20 50 100
-55°C to 125°C
θVB for VBE
Figure 11. Capacitance
VR, REVERSE VOLTAGE (VOLTS)
40
Figure 12. Current–Gain – Bandwidth Product
IC, COLLECTOR CURRENT (mA)
0.1 0.2 1.0 50
2.0 2.0 10 100
100
200
500
50
20
20
10
6.0
4.0
1.0 10 50 100
5.0
VCE = 5 V
TA = 25°C
C, CAPACITANCE (pF)
f, CURRENT-GAIN - BANDWIDTH PRODUCT
T
0.5 5.0 20
TA = 25°C
Cob
Cib