e ADVANCED LINEAR DEVICES, INC. TM EPAD EN (R) AB LE D ALD110808A/ALD110808/ALD110908A/ALD110908 QUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD(R) VGS(th)= +0.80V PRECISION MATCHED PAIR MOSFET ARRAY GENERAL DESCRIPTION APPLICATIONS ALD110808A/ALD110808/ALD110908A/ALD110908 are high precision monolithic quad/dual enhancement mode N-Channel MOSFETs matched at the factory using ALD's proven EPAD(R) CMOS technology. These devices are intended for low voltage, small signal applications. * Precision current mirrors * Precision current sources * Voltage choppers * Differential amplifier input stage * Voltage comparator * Voltage bias circuits * Sample and Hold * Analog inverter * Level shifters * Source followers and buffers * Current multipliers * Analog switches / multiplexers These MOSFET devices are built on the same monolithic chip, so they exhibit excellent temperature tracking characteristics. They are versatile as circuit elements and are useful design component for a broad range of analog applications. They are basic building blocks for current sources, differential amplifier input stages, transmission gates, and multiplexer applications. For most applications, connect the V+ pin to the most positive voltage and the V- and IC pins to the most negative voltage in the system. All other pins must have voltages within these voltage limits at all times. ALD110808/ALD110908 devices are built for minimum offset voltage and differential thermal response, and they are suited for switching and amplifying applications in +1.0V to +10V (+/-5V) systems where low input bias current, low input capacitance and fast switching speed are desired. As these are MOSFET devices, they feature very large (almost infinite) current gain in a low frequency, or near DC, operating environment. PIN CONFIGURATION These devices are suitable for use in precision applications which require very high current gain, beta, such as current mirrors and current sources. The high input impedance and the high DC current gain of the Field Effect Transistors result from extremely low current loss through the control gate. The DC current gain is limited by the gate input leakage current, which is specified at 30pA at room temperature. For example, DC beta of the device at a drain current of 3mA and input leakage current of 30pA at 25C is = 3mA/30pA = 100,000,000. FEATURES * Enhancement-mode (normally off) * Standard Gate Threshold Voltages: +0.80V * Matched MOSFET to MOSFET characteristics * Tight lot to lot parametric control * Low input capacitance * VGS(th) match to 2mV and 10mV * High input impedance -- 1012 typical * Positive, zero, and negative VGS(th) temperature coefficient * DC current gain >108 * Low input and output leakage currents ALD110808ASCL ALD110808SCL ALD110808APCL ALD110808PCL 8-Pin SOIC Package ALD110908ASAL ALD110908SAL 1 GN1 2 V- V- M1 M2 16 IC* 15 GN2 14 DN2 13 V+ 12 S34 11 DN3 GN3 DN1 3 S12 4 V- 5 DN4 6 GN4 7 10 IC* 8 9 V- V+ VM4 M3 V- IC* ALD110908 Operating Temperature Range* 0C to +70C 0C to +70C 16-Pin Plastic Dip Package IC* SCL, PCL PACKAGES ORDERING INFORMATION ("L" suffix denotes lead-free (RoHS)) 16-Pin SOIC Package ALD110808 8-Pin Plastic Dip Package ALD110908APAL ALD110908PAL IC* 1 GN1 2 DN1 3 S12 4 V- V- M1 M2 V- 8 IC* 7 GN2 6 DN2 5 V- SAL, PAL PACKAGES *IC pins are internally connected. Connect to V- * Contact factory for industrial temp. range or user-specified threshold voltage values. (c)2016 Advanced Linear Devices, Inc., Vers. 2.3 www.aldinc.com 1 of 12 ABSOLUTE MAXIMUM RATINGS Drain-Source voltage, VDS 10.6V Gate-Source voltage, VGS 10.6V Power dissipation 500 mW Operating temperature range SCL, PCL, SAL, PAL 0C to +70C Storage temperature range -65C to +150C Lead temperature, 10 seconds +260C CAUTION: ESD Sensitive Device. Use static control procedures in ESD controlled environment. OPERATING ELECTRICAL CHARACTERISTICS V+ = +5V V- = GND TA = 25C unless otherwise specified ALD110808A/ALD110908A Parameter Symbol Gate Threshold Voltage VGS(th) Offset Voltage VGS(th)1-VGS(th)2 Min 0.78 Typ Max ALD110808/ALD110908 Min Max Unit 0.80 0.82 V 3 10 Test Conditions 0.80 0.82 VOS 1 2 Offset Voltage Tempco TCVOS 5 5 V/C VDS1 = VDS2 Gate Threshold Voltage Tempco TCVGS(th) -1.7 0.0 +1.6 -1.7 0.0 +1.6 mV/C IDS = 1A, VDS = 0.1V IDS = 20A, VDS = 0.1V IDS = 40A, VDS = 0.1V Drain Source On Current IDS(ON) 12.0 3.0 12.0 3.0 mA VGS = +10.3V, VDS = +5V VGS = +4.8V, VDS = +5V Forward Transconductance GFS 1.4 1.4 mmho VGS = +4.8V VDS = +9.8V Transconductance Mismatch GFS 1.8 1.8 % Output Conductance GOS 68 68 mho VGS = +4.8V VDS = +9.8V Drain Source On Resistance RDS(ON) 500 500 VGS = +4.8V VDS = +0.1V Drain Source On Resistance Mismatch RDS(ON) 0.5 0.5 % Drain Source Breakdown Voltage BVDSX Drain Source Leakage Current1 IDS(OFF) 10 0.78 Typ 400 10 4 mV V V- = VGS = -1.0V IDS = 1.0A 400 pA 4 nA VGS = -0.2V, VDS = +5V V- = -5V TA = 125C 200 1 pA nA VGS = +5V, VDS = 0V TA =125C 10 10 IDS =1A, VDS = 0.1V Gate Leakage Current1 IGSS 3 Input Capacitance CISS 2.5 2.5 pF Transfer Reverse Capacitance CRSS 0.1 0.1 pF Turn-on Delay Time ton 10 10 ns V+ = 5V, RL= 5K Turn-off Delay Time toff 10 10 ns V+ = 5V, RL= 5K 60 60 dB f = 100KHz Crosstalk Notes: 1 200 1 3 Consists of junction leakage currents ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 Advanced Linear Devices 2 of 12 PERFORMANCE CHARACTERISTICS OF EPAD(R) PRECISION MATCHED PAIR MOSFET FAMILY ALD1108xx/ALD1109xx/ALD1148xx/ALD1149xx are monolithic quad/dual N-Channel MOSFETs matched at the factory using ALD's proven EPAD(R) CMOS technology. These devices are intended for low voltage, small signal applications. ALD's Electrically Programmable Analog Device (EPAD) technology provides a family of matched transistors with a range of precision threshold values. All members of this family are designed and actively programmed for exceptional matching of device electrical characteristics. Threshold values range from -3.50V Depletion to +3.50V Enhancement devices, including standard products specified at -3.50V, -1.30V, -0.40V, +0.00V, +0.20V, +0.40V, +0.80V, +1.40V, and +3.30V. ALD can also provide any customer desired value between -3.50V and +3.50V. For all these devices, even the depletion and zero threshold transistors, ALD EPAD technology enables the same well controlled turn-off, subthreshold, and low leakage characteristics as standard enhancement mode MOSFETs. With the design and active programming, even units from different batches and different dates of manufacture have well matched characteristics. As these devices are on the same monolithic chip, they also exhibit excellent tempco tracking. This EPAD MOSFET Array product family (EPAD MOSFET) is available in the three separate categories, each providing a distinctly different set of electrical specifications and characteristics. The first category is the ALD110800/ALD110900 Zero-ThresholdTM mode EPAD MOSFETs. The second category is the ALD1108xx/ ALD1109xx enhancement mode EPAD MOSFETs. The third category is the ALD1148xx/ALD1149xx depletion mode EPAD MOSFETs. (The suffix "xx" denotes threshold voltage in 0.1V steps, for example, xx = 08 denotes 0.80V). The ALD110800/ALD110900 (quad/dual) are EPAD MOSFETs in which the individual threshold voltage of each MOSFET is fixed at zero. The threshold voltage is defined as IDS = 1A @ VDS = 0.1V when the gate voltage VGS = 0.00V. Zero threshold devices operate in the enhancement region when operated above threshold voltage and current level (VGS > 0.00V and IDS > 1A) and subthreshold region when operated at or below threshold voltage and current level (VGS <= 0.00V and IDS < 1A). This device, along with other very low threshold voltage members of the product family, constitute a class of EPAD MOSFETs that enable ultra low supply voltage operation and nanopower type of circuit designs, applicable in either analog or digital circuits. The ALD1108xx/ALD1109xx (quad/dual) product family features precision matched enhancement mode EPAD MOSFET devices, which require a positive bias voltage to turn on. Precision threshold values such as +1.40V, +0.80V, +0.20V are offered. No conductive channel exists between the source and drain at zero applied gate voltage for these devices, except that the +0.20V version has a subthreshold current at about 20nA. The ALD1148xx/ALD1149xx (quad/dual) features depletion mode EPAD MOSFETs, which are normally-on devices when the gate bias voltage is at zero volts. The depletion mode threshold voltage is at a negative voltage level at which the EPAD MOSFET turns off. Without a supply voltage and/or with VGS = 0.0V the EPAD MOSFET device is already turned on and exhibits a defined and controlled on-resistance between the source and drain terminals. The ALD1148xx/ALD1149xx depletion mode EPAD MOSFETs are different from most other types of depletion mode MOSFETs and certain types of JFETs in that they do not exhibit high gate leakage currents and channel/junction leakage currents. When negative ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 signal voltages are applied to the gate terminal, the designer/user can depend on the EPAD MOSFET device to be controlled, modulated and turned off precisely. The device can be modulated and turned-off under the control of the gate voltage in the same manner as the enhancement mode EPAD MOSFET and the same device equations apply. EPAD MOSFETs are ideal for minimum offset voltage and differential thermal response, and they are used for switching and amplifying applications in low voltage (1V to 10V or +/-0.5V to +/-5V) or ultra low voltage (less than 1V or +/-0.5V) systems. They feature low input bias current (less than 30pA max.), ultra low power (microWatt) or Nanopower (power measured in nanoWatt) operation, low input capacitance and fast switching speed. These devices can be used where a combination of these characteristics are desired. KEY APPLICATION ENVIRONMENT EPAD MOSFET Array products are for circuit applications in one or more of the following operating environments: * Low voltage: 1V to 10V or +/-0.5V to +/-5V * Ultra low voltage: less than 1V or +/-0.5V * Low power: voltage x current = power measured in microwatt * Nanopower: voltage x current = power measured in nanowatt * Precision matching and tracking of two or more MOSFETs ELECTRICAL CHARACTERISTICS The turn-on and turn-off electrical characteristics of the EPAD MOSFET products are shown in the Drain-Source On Current vs Drain-Source On Voltage and Drain-Source On Current vs GateSource Voltage graphs. Each graph shows the Drain-Source On Current versus Drain-Source On Voltage characteristics as a function of Gate-Source voltage in a different operating region under different bias conditions. As the threshold voltage is tightly specified, the Drain-Source On Current at a given gate input voltage is better controlled and more predictable when compared to many other types of MOSFETs. EPAD MOSFETs behave similarly to a standard MOSFET, therefore classic equations for a n-channel MOSFET applies to EPAD MOSFET as well. The Drain current in the linear region (VDS < VGS - VGS(th)) is given by: IDS = u . COX . W/L . [VGS - VGS(th) - VDS/2] . VDS where: u = Mobility COX = Capacitance / unit area of Gate electrode VGS = Gate to Source voltage VGS(th) = Turn-on threshold voltage VDS = Drain to Source voltage W = Channel width L = Channel length In this region of operation the IDS value is proportional to VDS value and the device can be used as a gate-voltage controlled resistor. For higher values of VDS where VDS >= VGS - VGS(th), the saturation current IDS is now given by (approx.): Advanced Linear Devices IDS = u . COX . W/L . [VGS - VGS(th)]2 3 of 12 PERFORMANCE CHARACTERISTICS OF EPAD(R) PRECISION MATCHED PAIR MOSFET FAMILY (cont.) SUB-THRESHOLD REGION OF OPERATION ZERO TEMPERATURE COEFFICIENT (ZTC) OPERATION Low voltage systems, namely those operating at 5V, 3.3V or less, typically require MOSFETs that have threshold voltage of 1V or less. The threshold, or turn-on, voltage of the MOSFET is a voltage below which the MOSFET conduction channel rapidly turns off. For analog designs, this threshold voltage directly affects the operating signal voltage range and the operating bias current levels. For an EPAD MOSFET in this product family, there exist operating points where the various factors that cause the current to increase as a function of temperature balance out those that cause the current to decrease, thereby canceling each other, and resulting in net temperature coefficient of near zero. One of these temperature stable operating points is obtained by a ZTC voltage bias condition, which is 0.55V above a threshold voltage when VGS = VDS, resulting in a temperature stable current level of about 68A. For other ZTC operating points, see ZTC characteristics. At or below threshold voltage, an EPAD MOSFET exhibits a turnoff characteristic in an operating region called the subthreshold region. This is when the EPAD MOSFET conduction channel rapidly turns off as a function of decreasing applied gate voltage. The conduction channel induced by the gate voltage on the gate electrode decreases exponentially and causes the drain current to decrease exponentially. However, the conduction channel does not shut off abruptly with decreasing gate voltage. Rather, it decreases at a fixed rate of approximately 116mV per decade of drain current decrease. Thus, if the threshold voltage is +0.20V, for example, the drain current is 1A at VGS = +0.20V. At VGS = +0.09V, the drain current would decrease to 0.1A. Extrapolating from this, the drain current is 0.01A (10nA) at VGS = -0.03V, 1nA at VGS = -0.14V, and so forth. This subthreshold characteristic extends all the way down to current levels below 1nA and is limited by other currents such as junction leakage currents. PERFORMANCE CHARACTERISTICS Performance characteristics of the EPAD MOSFET product family are shown in the following graphs. In general, the threshold voltage shift for each member of the product family causes other affected electrical characteristics to shift with an equivalent linear shift in VGS(th) bias voltage. This linear shift in VGS causes the subthreshold I-V curves to shift linearly as well. Accordingly, the subthreshold operating current can be determined by calculating the gate voltage drop relative to its threshold voltage, VGS(th). RDS(ON) AT VGS = GROUND At a drain current to be declared "zero current" by the user, the VGS voltage at that zero current can now be estimated. Note that using the above example, with VGS(th) = +0.20V, the drain current still hovers around 20nA when the gate is at zero volts, or ground. LOW POWER AND NANOPOWER When supply voltages decrease, the power consumption of a given load resistor decreases as the square of the supply voltage. So one of the benefits in reducing supply voltage is to reduce power consumption. While decreasing power supply voltages and power consumption go hand-in-hand with decreasing useful AC bandwidth and at the same time increases noise effects in the circuit, a circuit designer can make the necessary tradeoffs and adjustments in any given circuit design and bias the circuit accordingly. With EPAD MOSFETs, a circuit that performs a specific function can be designed so that power consumption can be minimized. In some cases, these circuits operate in low power mode where the power consumed is measure in micro-watts. In other cases, power dissipation can be reduced to the nano-watt region and still provide a useful and controlled circuit function operation. ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 Several of the EPAD MOSFETs produce a fixed resistance when their gate is grounded. For ALD110800, the drain current is 1A at VDS = 0.1V and VGS = 0.0V. Thus, just by grounding the gate of the ALD110800, a resistor with RDS(ON) = ~100K is produced. When an ALD114804 gate is grounded, the drain current IDS = 18.5A @ VDS = 0.1V, producing RDS(ON) = 5.4K. Similarly, ALD114813 and ALD114835 produce drain currents of 77A and 185A, respectively, at VGS = 0.0V, and RDS(ON) values of 1.3K and 540, respectively. MATCHING CHARACTERISTICS A key benefit of using a matched pair EPAD MOSFET is to maintain temperature tracking. In general, for EPAD MOSFET matched pair devices, one device of the matched pair has gate leakage currents, junction temperature effects, and drain current temperature coefficient as a function of bias voltage that cancel out similar effects of the other device, resulting in a temperature stable circuit. As mentioned earlier, this temperature stability can be further enhanced by biasing the matched-pairs at Zero Tempco (ZTC) point, even though that could require special circuit configuration and power consumption design consideration. Advanced Linear Devices 4 of 12 TYPICAL PERFORMANCE CHARACTERISTICS OUTPUT CHARACTERISTICS DRAIN-SOURCE ON RESISTANCE vs. DRAIN-SOURCE ON CURRENT TA = +25C VGS - VGS(th) = +5V 4 VGS - VGS(th) = +4V 3 VGS - VGS(th) = +3V 2 VGS - VGS(th) = +2V 1 VGS - VGS(th) = +1V 0 0 2 4 6 8 2500 DRAIN-SOURCE ON RESISTANCE () DRAIN-SOURCE ON CURRENT (mA) 5 TA = +25C 2000 1500 VGS = VGS(th) + 4V 1000 500 VGS = VGS(th) + 6V 0 10 100 10 DRAIN-SOURCE ON VOLTAGE (V) 2.5 20 VGS(th) = -3.5V TA = +25C VDS = +10V 15 TRANSCONDUCTANCE ( m A/V) DRAIN-SOURCE ON CURRENT (mA) 10000 TRANSCONDUCTANCE vs. AMBIENT TEMPERATURE FORWARD TRANSFER CHARACTERISTICS VGS(th) = -1.3V VGS(th) = -0.4V 10 VGS(th) = 0.0V VGS(th) = +0.2V 5 VGS(th) = +0.8V 2.0 1.5 1.0 0.5 VGS(th) = +1.4V 0 -4 -2 0 2 6 4 0 -50 10 8 -25 DRAIN-SOURCE ON CURRENT (nA) 100000 TA = +25C VDS = +0.1V VGS (th) = +1.4V VGS (th) = +0.8V VGS (th) = +0.2V VGS (th) = 0.0V 1 VGS (th) = -0.4V 10 VGS (th) = -1.3V VGS (th) = -3.5V 1000 100 25 50 75 100 125 SUBTHRESHOLD FORWARD TRANSFER CHARACTERISTICS SUBTHRESHOLD FORWARD TRANSFER CHARACTERISTICS 10000 0 AMBIENT TEMPERATURE (C) GATE-SOURCE VOLTAGE (V) DRAIN-SOURCE ON CURRENT (nA) 1000 DRAIN-SOURCE ON CURRENT (A) 0.1 10000 0.01 1000 100 VDS = +0.1V ~ 110mV/decade Slope = 10 1 0.1 0.01 -4 -3 -2 -1 0 1 2 GATE-SOURCE VOLTAGE (V) ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 VGS(th)-0.5 VGS(th)-0.4 VGS(th)-0.3 VGS(th)-0.2 VGS(th)-0.1 VGS(th) GATE-SOURCE VOLTAGE (V) Advanced Linear Devices 5 of 12 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) DRAIN-SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE DRAIN-SOURCE ON CURRENT, BIAS CURRENT vs. AMBIENT TEMPERATURE 100 -55C 4 -25C 3 0C 2 1 +70C 0 VGS(th)-1 VGS(th) VGS(th)+1 +125C +125C 50 -25C 0 VGS(th)+3 VGS(th)+4 VGS(th)+2 VGS(th) VGS(th)+0.2 VGS(th)+0.6 VGS(th)+0.8 GATE- AND DRAIN-SOURCE VOLTAGE (VGS = VDS) (V) DRAIN-SOURCE ON CURRENT vs. DRAIN-SOURCE ON RESISTANCE GATE-SOURCE VOLTAGE vs. DRAIN-SOURCE ON CURRENT VGS(th)+1.0 1000 100 VDS = +10V 10 VDS = +0.1V 1 VDS = +5V VDS = +1V 0.1 GATE-SOURCE VOLTAGE (V) VGS(th)+4 TA = +25C VGS = -4.0V to +5.4V 10000 VDS = RON * IDS(ON) VGS(th)+3 D VGS(th)+2 VDS VGS VDS = +0.5V TA = +125C VDS = +0.5V TA = +25C IDS(ON) S VDS = +5V TA = +125C VGS(th)+1 VDS = +5V TA = +25C VGS(th) VGS(th)-1 0.01 0.1 1 10 100 1000 1 0.1 10000 10 100 1000 10000 DRAIN-SOURCE ON CURRENT (A) DRAIN-SOURCE ON RESISTANCE (K) OFFSET VOLTAGE vs. AMBIENT TEMPERATURE DRAIN-SOURCE ON CURRENT vs. OUTPUT VOLTAGE 5 4 3 VDS = +10V 4 TA = +25C 3 VDS = +5V 2 1 OFFSET VOLTAGE (mV) DRAIN-SOURCE ON CURRENT (mA) VGS(th)+0.4 GATE- AND DRAIN-SOURCE VOLTAGE (VGS = VDS) (V) 100000 DRAIN-SOURCE ON CURRENT (A) Zero Temperature Coefficient (ZTC) DRAIN-SOURCE ON CURRENT (A) DRAIN-SOURCE ON CURRENT (mA) 5 REPRESENTATIVE UNITS 2 1 0 -1 -2 VDS = +1V -3 0 -4 VGS(th) VGS(th)+1 VGS(th)+2 VGS(th)+3 VGS(th)+4 VGS(th)+5 -25 0 25 50 75 100 125 AMBIENT TEMPERATURE (C) OUTPUT VOLTAGE (V) ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 -50 Advanced Linear Devices 6 of 12 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) GATE SOURCE VOLTAGE vs. DRAIN-SOURCE ON RESISTANCE GATE LEAKAGE CURRENT vs. AMBIENT TEMPERATURE VGS(th)+4 GATE-SOURCE VOLTAGE (V) GATE LEAKAGE CURRENT (pA) 10000 1000 100 10 1 IGSS 0.1 0.0V VDS 5.0V VGS(th)+3 +125C D VGS(th)+2 -50 S VGS(th)+1 -25 0 25 50 75 100 0 125 2 4 6 8 DRAIN-GATE DIODE CONNECTED VOLTAGE TEMPCO vs. DRAIN-SOURCE ON CURRENT TRANSFER CHARACTERISTICS 1.6 5 TRANSCONDUCTANCE (m-1) -55C TA +125C 2.5 0 -2.5 VGS(th) = -3.5V TA = +25C VDS = +10V VGS(th) = -1.3V 1.2 VGS(th) = -0.4V 0.8 VGS(th) = 0.0V VGS(th) = +0.2V 0.4 VGS(th) = +0.8V VGS(th) = +1.4V 0.0 -5 1 100 10 10 DRAIN-SOURCE ON RESISTANCE (K) AMBIENT TEMPERATURE (C) DRAIN-GATE DIODE CONNECTED VOLTAGE TEMPCO (mV/C) IDS(ON) VGS +25C VGS(th) 0.01 1000 -4 2 0 -2 4 6 8 DRAIN-SOURCE ON CURRENT (A) GATE-SOURCE VOLTAGE (V) ZERO TEMPERATURE COEFFICIENT CHARACTERISTICS SUBTHRESHOLD CHARACTERISTICS 0.6 10 2.5 VGS(th) = -3.5V GATE-SOURCE VOLTAGE (V) GATE-SOURCE VOLTAGE (V) VDS 0.5 VGS(th) = -1.3V, -0.4V, 0.0V, +0.2V, +0.8V, +1.4V 0.3 0.2 0.0 2.0 1.5 0.2 0.5 1.0 2.0 5.0 DRAIN-SOURCE ON VOLTAGE (V) ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 Advanced Linear Devices VGS(th) = +0.4V TA = +55C 0.5 0.0 -0.5 0.1 VGS(th) = +0.4V TA = +25C 1.0 VGS(th) = +0.2V TA = +25C 100000 10000 VGS(th) = +0.2V TA = +55C 1000 100 10 1 0.1 DRAIN-SOURCE ON CURRENT (nA) 7 of 12 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) THRESHOLD VOLTAGE vs. AMBIENT TEMPERATURE TRANCONDUCTANCE vs. DRAIN-SOURCE ON CURRENT 4.0 TA = +25C VDS = +10V THRESHOLD VOTAGE (V) TARNCONDUCTANCE (m-1) 1.2 0.9 0.6 0.3 IDS = +1A VDS = +0.1V 3.0 2.0 Vt = +1.4V 1.0 Vt = 0.0V Vt = +0.8V Vt = +0.2V Vt = +0.4V 0.0 0.0 0 2 4 6 8 -50 10 0 25 50 75 100 AMBIENT TEMPERATURE (C) NORMALIZED SUBTHRESHOLD CHARACTERISTICS RELATIVE TO GATE THRESHOLD VOLTAGE SUBTHRESHOLD FORWARD TRANSFER CHARACTERISTICS 125 2.0 0.3 0.2 THRESHOLD VOLTAGE (V) GATE-SOURCE VOLTAGE VGS - VGS(th) (V) -25 DRAIN-SOURCE ON CURRENT (mA) VDS = +0.1V 0.1 0 -0.1 +25C -0.2 +55C -0.3 IDS = +1A VDS = +0.1V 1.0 VGS(th) = 0.0V 0.0 VGS(th) = -0.4V -1.0 VGS(th) = -1.3V -2.0 -3.0 VGS(th) = -3.5V -4.0 -0.4 10000 1000 100 10 1 0.1 DRAIN-SOURCE ON CURRENT (nA) ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 Advanced Linear Devices -25 25 75 125 AMBIENT TEMPERATURE (C) 8 of 12 SOIC-16 PACKAGE DRAWING 16 Pin Plastic SOIC Package E Millimeters S (45) D Dim Min A 1.35 Max 1.75 Min 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-16 9.80 10.00 0.385 0.394 E 3.50 4.05 0.140 0.160 1.27 BSC e A A1 e Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 o 0 8 0 8 S 0.25 0.50 0.010 0.020 b S (45) H L ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 C o Advanced Linear Devices 9 of 12 PDIP-16 PACKAGE DRAWING 16 Pin Plastic DIP Package E E1 Millimeters Dim D S A2 A1 e b A L Inches A Min 3.81 Max 5.08 Min 0.105 Max 0.200 A1 0.38 1.27 0.015 0.050 A2 1.27 2.03 0.050 0.080 b 0.89 1.65 0.035 0.065 b1 0.38 0.51 0.015 0.020 c 0.20 0.30 0.008 0.012 D-16 18.93 21.33 0.745 0.840 E 5.59 7.11 0.220 0.280 E1 7.62 8.26 0.300 0.325 e 2.29 2.79 0.090 0.110 e1 L 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 S-16 0.38 1.52 0.015 0.060 o 0 15 0 15 b1 c e1 o ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 Advanced Linear Devices 10 of 12 SOIC-8 PACKAGE DRAWING 8 Pin Plastic SOIC Package E Millimeters Dim S (45) D A Min 1.35 Max 1.75 Min 0.053 Max 0.069 A1 0.10 0.25 0.004 0.010 b 0.35 0.45 0.014 0.018 C 0.18 0.25 0.007 0.010 D-8 4.69 5.00 0.185 0.196 E 3.50 4.05 0.140 0.160 1.27 BSC e A A1 e b Inches 0.050 BSC H 5.70 6.30 0.224 0.248 L 0.60 0.937 0.024 0.037 o 0 8 0 8 S 0.25 0.50 0.010 0.020 S (45) H L ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 C o Advanced Linear Devices 11 of 12 PDIP-8 PACKAGE DRAWING 8 Pin Plastic DIP Package E E1 Millimeters D S A2 A1 e b b1 A L Inches Dim Min Max Min Max A 3.81 5.08 0.105 0.200 A1 0.38 1.27 0.015 0.050 A2 1.27 2.03 0.050 0.080 b 0.89 1.65 0.035 0.065 b1 0.38 0.51 0.015 0.020 c 0.20 0.30 0.008 0.012 D-8 9.40 11.68 0.370 0.460 E 5.59 7.11 0.220 0.280 E1 7.62 8.26 0.300 0.325 e 2.29 2.79 0.090 0.110 e1 L 7.37 7.87 0.290 0.310 2.79 3.81 0.110 0.150 S-8 1.02 2.03 0.040 0.080 0 15 0 15 o c e1 o ALD110808A/ALD110808/ ALD110908A/ALD110908, Vers. 2.3 Advanced Linear Devices 12 of 12