BCP69-25 PNP Silicon AF Transistor * For general AF applications 4 * High collector current 3 2 * High current gain 1 * Low collector-emitter saturation voltage * Complementary type: BCP68 (NPN) * Pb-free (RoHS compliant) package * Qualified according AEC Q101 Type Marking BCP69-25 ...-25* Pin Configuration 1=B 2=C 3=E 4=C - Package - SOT223 * Marking is the same as type-name Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCEO 20 Collector-emitter voltage VCES 25 Collector-base voltage VCBO 25 Emitter-base voltage VEBO 5 Collector current IC 1 Peak collector current, tp 10 ms ICM 2 Base current IB 100 Peak base current IBM 200 Total power dissipation- Ptot 3 W 150 C V A mA TS 114 C Junction temperature Tj Storage temperature Tstg -65 ... 150 Thermal Resistance Parameter Symbol Junction - soldering point1) RthJS 1 Value Unit 12 K/W 2011-09-19 BCP69-25 Electrical Characteristics at TA = 25C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)CEO 20 - - V(BR)CBO 25 - - V(BR)CES 25 - - V(BR)EBO 5 - - DC Characteristics Collector-emitter breakdown voltage V IC = 30 mA, IB = 0 Collector-base breakdown voltage IC = 10 A, IE = 0 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 Emitter-base breakdown voltage IE = 10 A, IC = 0 Collector-base cutoff current A ICBO VCB = 25 V, IE = 0 - - 0.1 VCB = 25 V, IE = 0 , TA = 150 C - - 100 DC current gain2) - hFE IC = 5 mA, VCE = 10 V 50 - - IC = 500 mA, VCE = 1 V, BCP69-16 100 160 250 IC = 500 mA, VCE = 1 V, BCP69-25 160 250 375 IC = 1 A, VCE = 1 V 60 - - - - 0.5 IC = 5 mA, VCE = 10 V - 0.6 - IC = 1 A, VCE = 1 V - - 1 - 100 - Collector-emitter saturation voltage2) VCEsat V IC = 1 A, IB = 100 mA Base-emitter voltage2) VBE(ON) AC Characteristics Transition frequency fT MHz IC = 100 mA, VCE = 5 V, f = 100 MHz 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) 2Pulse test: t < 300s; D < 2% 2 2011-09-19 BCP69-25 DC current gain hFE = (IC) VCE = 1 V 10 3 h FE Collector-emitter saturation voltage IC = (VCEsat ), hFE = 10 BCP 69 EHP00285 BCP 69 10 4 5 C EHP00286 mA 100 C 10 3 25 C 10 2 5 100 C 25 C -50 C -50 C 5 10 2 5 10 1 10 1 5 5 10 0 10 0 10 0 10 1 10 2 mA 10 4 0 0.2 0.6 0.4 C Collector cutoff current ICBO = (TA) VCBO = 25 V IC = (VBEsat), hFE = 10 BCP 69 EHP00287 10 5 mA CBO C 10 BCP 69 EHP00284 nA 10 4 100 C 25 C -50 C 3 0.8 V CEsat Base-emitter saturation voltage 10 4 V max 10 3 10 2 typ 10 2 10 1 10 1 10 0 0 0.2 0.4 0.6 0.8 V 10 0 1.2 V BEsat 0 50 100 C 150 TA 3 2011-09-19 BCP69-25 Transition frequency fT = (IC) VCE = 5 V 10 3 BCP 69 Total power dissipation P tot = (TS) EHP00283 3.5 MHz fT W 5 Ptot 2.5 2 10 2 1.5 5 1 0.5 10 1 0 10 10 1 10 2 mA 0 0 10 3 15 30 45 60 90 105 120 C 75 150 ts C Permissible Pulse Load RthJS = (tp) Permissible Pulse Load Ptotmax/PtotDC = (tp ) 10 3 Ptotmax/PtotDC RthJS 10 2 10 1 D = 0,5 0,2 0,1 0,05 0,02 0,01 0,005 0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 4 2011-09-19 Package SOT223 1.60.1 6.5 0.2 A 0.1 MAX. 3 0.1 7 0.3 3 2 0.5 MIN. 1 2.3 0.7 0.1 B 15 MAX. 4 3.5 0.2 Package Outline BCP69-25 4.6 0.28 0.04 0...10 0.25 M A 0.25 M B Foot Print 1.4 4.8 1.4 3.5 1.2 1.1 Marking Layout (Example) Manufacturer 2005, 24 CW Date code (YYWW) BCP52-16 Type code Pin 1 Packing Reel o180 mm = 1.000 Pieces/Reel Reel o330 mm = 4.000 Pieces/Reel 0.3 MAX. 7.55 12 8 Pin 1 1.75 6.8 5 2011-09-19 BCP69-25 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany 2009 Infineon Technologies AG All Rights Reserved. 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