NTE467
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, VDS 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Drain–Gate Voltage, VDG 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Gate–Source Voltage, VGSR 30V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Gate Current, IG(f) 10mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (TA = +25°C), PD310mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 2.82mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, TJ–65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, Tstg –65° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Gate–Source Breakdown Voltage V(BR)GSS IG = 10µA, VDS = 0 30 – – V
Gate Reverse Current IGSS VGS = –15V, VDS = 0 – – 1.0 nA
VGS = –15V, VDS = 0, TA = +100°C – – 1.0 µA
Drain Cutoff Current ID(off) VDS = 15V, VGS = –12V – – 1.0 nA
VDS = 15V, VGS = –12V, TA = +100°C – – 1.0 µA
ON Characteristics
Zero–Gate Voltage Drain Current IDSS VDS = 20V, VGS = 0, Note 1 50 – – mA
Drain–Source ON–Voltage VDS(on) ID = 12mA, VGS = 0 – – 0.5 V
Static Drain–Source ON Resistance rDS(on) ID = 1mA, VGS = 0 – – 30 Ω
Input Capacitance Ciss VGS = –12V, VDS = 0, f = 1MHz – – 10 pF
Reverse Transfer Capacitance Crss VGS = –12V, VDS = 0, f = 1MHz – – 4 pF
Switching Characteristics
Turn–On Delay T ime td(on) VDD = 10V, VGS(on) = 0, – – 4 ns
Rise Time trVGS(off) = 10V, ID(on) = 12mA,
RG = 50Ω– – 5 ns
Turn–Off Delay Time td(off)
RG = 50
Ω
– – 5 ns
Fall Time tf– – 10 ns
Note 1. Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 3%.
.021 (.445) Dia Max
D S G
Seating Plane
.135 (3.45) Min
.100 (2.54)
.050 (1.27)
.105 (2.67) Max
.105 (2.67) Max
.205 (5.2) Max
.210
(5.33)
Max
.500
(12.7)
Min
.165
(4.2)
Max
