140 A
F AST RECOVER Y DIODES
Bulletin I27095 rev. A 08/97
1
IRK.L132.. SERIES
INT-A-pakä Power Modules
www.irf.com
Parameters IRK.L132.. Units
I F(AV) 140 (130) A
@ TC100 (105) °C
IF(RMS) 220 A
IFSM @ 50Hz 3000 A
@ 60Hz 3100 A
I2t @ 50Hz 44.2 KA2s
@ 60Hz 40.3 KA2s
I2t 442 KA2s
VRRM up to 1400 V
TJ- 40 to 150 oC
Features
Fast recovery time characteristics
Electrically isolated base plate
Industrial standard package
Simplified mechanical designs, rapid assembly
High surge capability
Large creepage distances
3000 VRMS isolating voltage
UL E78996 approved
Description
The IRK.L132 series of INT-A-pak uses fast recovery
power diodes in four basic configurations. The semicon-
ductors are electrically isolated from the metal base, al-
lowing common heatsinks and compact assemblies to be
built. Application includes power supplies, battery charg-
ers, welders, motor controls and general industrial current
rectification. These modules are intended for those appli-
cations where fast recovery characteristics are required.
Major Ratings and Characteristics
IRK.L132.. Series
2
Bulletin I27095 rev. A 08/97
www.irf.com
IF(AV) Max. average forward current 140 (130) A 180° conduction, half sine wave
@ Case temperature 100 (105) °C
IF(RMS) Max. RMS forward current 22 0 A as AC switch
IFSM Max. peak, one-cycle forward, 3000 t = 10ms No voltage
non-repetitive surge current 3100 t = 8.3ms reapplied
2500 t = 10ms 100% VRRM
2600 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 44.2 t = 10ms No voltage Initial TJ = TJ max.
40.3 t = 8.3ms reapplied
31.2 t = 10ms 100% VRRM
28.5 t = 8.3ms reapplied
I2t Maximum I2t for fusing 442 KA2s t = 0.1 to 10ms, no voltage reapplied
VF(TO)1 Low level value of threshold
voltage
VF(TO)2 High level value of threshold
voltage
rf1Low level value of forward
slope resistance
rf2High level value of forward
slope resistance
VFM Max. forward voltage drop 1.68 V IFM = π x IF(AV), TJ = 25°C
Av. power = VF(TO) x IF(AV) + rf x (IF(RMS))2
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Type number Voltage trr VRRM , maximum repetitive VRSM , maximum non-repetitive IRRM max.
Code Code peak reverse voltage peak reverse voltage @ 150°C
VVmA
06 S10 600 700
10 S10 1000 1100
12 S20 1200 1300
14 S20 1400 1500
Parameter IRK.L132.. Units Conditions
Forward Conduction
KA2s
A
1.12 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
1.52 (16.7% x π x IF(AV) < I < π x IF(AV)), TJ = TJ max.
m
V
0.71 (I > π x IF(AV)),TJ = TJ max.
1.51 (I > π x IF(AV)),TJ = TJ max.
IRK.L132.. 40
Test conditions Typ. values @ TJ
= 150oC
Code Ipk di/dt VrQrr Irr
(A) (A/µs) (V) (µC) (A)
S10 500 100 50 38 70
S20 500 100 50 68 95
t
IFM trr
Qrr
IRM (REC)
di
dt
Recovery Characteristics
IRK.L132.. Series
3
Bulletin I27095 rev. A 08/97
www.irf.com
TJMax. junction operating -40 to 150 ° C
temperature range
Tstg Max. storage temperature range -40 to 150 °C
RthJC Max. thermal resistance, 0.20 K/W Per junction, DC operation
junction to case
RthCS Max. thermal resistance, 0.035 K/W
case to heatsink
T Mounting torque ±10%
IAP to heatsink 4 t o 6 Nm
busbar to IAP 4 t o 6
wt Approximate weight 500 (17.8) g (oz)
IRK D L 13 2 - 14 S20 N
123
1- Module type
2- Circuit configuration (see Outline Table)
3- L = Fast recovery diode
4- Current rating: IF(AV) x 10 rounded
5- 1 = option with spacers and longer terminal screws
2 = option with standard terminal screws
6- Voltage code: Code x 100 = VRRM (see Voltage Rating Table)
7-t
rr code (see Recovery Characteristics Table)
8- None = Standard devices
N = Aluminum nitrade substrate
4
Device Code
Ordering Information Table
5 6
IRRM Max. peak reverse leakage
current
VINS RMS isolation voltage 3000 V 50 Hz, circuit to base, all terminals shorted, t = 1 sec
Blocking
40 mA TJ = 150oC
Parameter IRK.L132.. Units Conditions
7 8
S10 = 1000ns
S20 = 2000ns
Parameter IRK.L132.. Units Conditions
Thermal and Mechanical Specifications
A mounting compound is recommended and
the torque should be rechecked after a period
of 3 hours to allow for the spread of the
compound
Mounting surface flat, smooth and greased
Per module
RthJC Conduction
(The following table shows the increment of thermal resistence RthJC when devices operate at different conduction angles than DC)
180° 0.011 0.012 TJ = TJ max.
120° 0.016 0.019
90° 0.021 0.023 K/W
60° 0.029 0.030
30° 0.041 0.041
Conduction angle Sinusoidal conduction Rectangular conduction Units Conditions
IRK.L132.. Series
4
Bulletin I27095 rev. A 08/97
www.irf.com
- All dimensions in millimeters (inches)
- Dimensions are nominal
- Full engineering drawings are available
on request
- UL identification number for cathode
wire: UL 1385
- UL identification number for package:
UL 94V0
Outline Table
For all types A B C D E
IRK...1 25 (0.98) ---- ---- 41 (1.61) 47 (1.85)
IRK...2 23 (0.91) 30 (1.18) 36 (1.42) ---- ----
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
IRKDL... IRKCL... IRKJL... IRKEL...
80
90
100
110
120
130
140
150
0 25 50 75 100 125 15
0
30°60° 90° 120°180°
Ma xi mum A l lowa ble Ca s e Te mp era t ur e ( °C
)
Con duct ion Angl e
Average Forward Current (A )
IRK.L13 2.. Se ries
R (DC) = 0.20 K/W
thJC
80
90
100
110
120
130
140
150
0 50 100 150 200 25
0
DC
30°
60°
90°120°18
M axi mu m All owab l e Ca s e Tem per a tur e (°C
)
Cond ucti on P eriod
Average Forward Current (A)
IR K. L132.. S eries
R (DC) = 0.20 K/W
thJC
IRK.L132.. Series
5
Bulletin I27095 rev. A 08/97
www.irf.com
Fig. 4 - Forward Power Loss CharacteristicsFig. 3 - Forward Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current Fig. 6 - Maximum Non-Repetitive Surge Current
Fig. 7 - Forward Voltage Drop Characteristics Fig. 8 - Thermal Impedance ZthJC Characteristic
0
25
50
75
100
125
150
175
200
225
250
0 25 50 75 100 125 1
50
Av erage F o r war d C urr ent ( A)
RM S Limit
Maximum Aver age Forward Power Loss (W
)
Con d uction Angl e
180°
120°
90°
60°
30°
IRK.L132.. Series
T = 150°C
Per Juncti on
J
0
50
100
150
200
250
300
350
0 50 100 150 200 25
0
DC
180°
12
90°
60°
30°
Average F orward Curr ent (A)
RMS Lim it
M a xi mu m Avera g e F or ward Pow er Lo ss (W
)
Cond uc t ion P eriod
IR K.L1 32. . Series
T = 150°C
Per Junctio n
J
500
1000
1500
2000
2500
3000
11010
0
Pe ak Half S ine Wave F orw ard Curr e nt (A
)
Nu mber Of Equal Amplit ude Half Cycle Current Pulses (N
)
IR K.L132.. Series
Per Juncti on
Initial T = 150°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
At An y Ra ted Load C ondition And With
Rated V Applied Following Surge.
RRM J
500
1000
1500
2000
2500
3000
0.01 0.1
1
P eak Half Si ne Wave Forward C urrent (A
)
Puls e Train Duration (s)
IRK.L132.. Series
Per Junction
Initial T = 150°C
No Voltage Reapplied
Rated V Reapplied
RRM
Versus Pul se Train Dur ation
.
J
M aximum No n Repet itiv e S urg e Curren
t
10
100
1000
10000
012345
6
T = 25°C
J
Instantaneous Fo rward Current (A)
Instantaneous For ward Voltage ( V)
IRK.L132.. Series
Per Junction
T = 150°C
J
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 1
0
Square Wave Pulse Duration (s)
thJC
Transient Thermal Impedance Z (K/W)
Steady State Val ue
R = 0.20 K/W
(DC Opera tion)
IRK.L132.. Series
Per Junct ion
thJC
IRK.L132.. Series
6
Bulletin I27095 rev. A 08/97
www.irf.com
Fig. 11 - Reverse Recovery Charge Characteristics
Fig. 13 - Maximum Forward Energy Power Loss Characteristics
Fig. 9 - Reverse Recovery Charge Characteristics
Fig. 12 - Reverse Recovery Current Characteristics
Fig. 10 - Reverse Recovery Current Characteristics
10
20
30
40
50
60
70
80
10 20 30 40 50 60 70 80 90 10
0
R ate Of Fal l Of Forward Current - di/dt (A/µ
s)
M aximum Reverse Recovery Current - Irr (A
)
20 A
50 A
10 0 A
20 0 A
I = 500 A
TM
IR K.L1 32. .S10 Series
T = 150 °C
J
5
10
15
20
25
30
35
40
45
50
10 20 30 40 50 60 70 80 90 10
0
Rate Of Fall Of Forward Current - di /dt (A/µ
s)
Maximu m Rev erse Recov ery C harge - Qrr (µC
)
IRK.L132..S10 Series
T = 150 °C
J
I = 500 A
20 0 A
TM
100 A
50 A
20 A
10
20
30
40
50
60
70
80
90
100
110
120
10 20 30 40 50 60 70 80 90 10
0
R ate Of Fall Of F orward Cu rr ent - di/d t (A/µ
s)
Maximum Reverse Re c o very Current - Irr (A
)
20 A
50 A
10 0 A
2 00 A
I = 500 A
TM
IRK .L132..S20 Series
T = 150 °C
J
10
20
30
40
50
60
70
80
90
100
10 20 30 40 50 60 70 80 90 10
0
R ate Of Fall Of Forward Current - di/dt (A/µ
s)
M a ximu m R e ver s e R ecover y Char g e - Qrr ( µC
)
IRK.L132..S20 Ser ies
T = 150 °C
J
I = 500 A
TM
200 A
100 A
50 A
20 A
1E0
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1
14
2
0.10.20.4
0.02
0.04
Pul se Basewidth ( µs)
Peak Fo rward Current (A)
20 joules p er pulse
0.01
IRK.L1 32. . Series
Sinusoidal pulse
T = 150°C
J
tp
10
1E4
1
E
11E21E31E
4
20 jo ules per pulse
10
4
2
1
0.4
0.2
0.1
0.04
0.02
0.01
Pu ls e Bas ewidth ( µs)
IRK.L132.. Series
Tr a pezoida l P ulse
T = 150 °C
J
tp
1E1
IRK.L132.. Series
7
Bulletin I27095 rev. A 08/97
www.irf.com
Fig. 14 - Frequency Characteristics
Fig. 15 - Frequency Characteristics
1E2
1E3
1E4
1E5
1E11E21E31E
4
50 Hz
400
1000
20015002500
5000
Peak Forward Current (A)
Pulse Basewidth (µs)
IRK.L 132.. Series
Tra pez o ida l Pulse
T = 60 °C
C
tp
1E4
1E2
1E3
1E4
1E5
1E1 1E2 1E3 1E
4
50 Hz
400
1000
200
1500
25001000020000
5000
Peak Forward Current (A )
Pu ls e B asew idth (µs)
IRK.L1 32. . Series
Sinusoidal Puls e
T = 60 °C
C
tp
1E4
1
E
11E21E31E
4
50 H z
4001000
200
15002500
5000
Pulse Bas ewidth (µs)
IRK.L132.. Se ries
Tr a pezoid al Pu ls e
T = 100 °C
C
tp
1E1
1
E1 1E2 1E3 1E
4
50 Hz
4001000
200
1500
25001000020000
5000
Pu ls e Bas ewidth ( µs)
IRK. L132.. Series
Sinusoidal Puls e
T = 100 °C
C
tp
1E1