SST39VF6401B-70-4C-B1KE - Silicon Storage Technology, Inc.

Data Sheet

S71288-02-000 7/06

The SST logo and SuperFlash are registered trademarks of Silicon Storage Technology, Inc.

MPF is a trademark of Silicon Storage Technology, Inc.

These specifications are subject to change without notice.

64 Mbit (x16) Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FEATURES:

• Organized as 4M x16

• Single Voltage Read and Write Operations

– 2.7-3.6V

• Superior Reliability

– Endurance: 100,000 Cycles (Typical)

– Greater than 100 years Data Retention

• Low Power Consumption (typical values at 5 MHz)

– Active Current: 9 mA (typical)

– Standby Current: 3 µA (typical)

– Auto Low Power Mode: 3 µA (typical)

• Hardware Block-Protection/WP# Input Pin

– Top Block-Protection (top 32 KWord)

for SST39VF6402B

– Bottom Block-Protection (bottom 32 KWord)

for SST39VF6401B

• Sector-Erase Capability

– Uniform 2 KWord sectors

• Block-Erase Capability

– Uniform 32 KWord blocks

• Chip-Erase Capability

• Erase-Suspend/Erase-Resume Capabilities

• Hardware Reset Pin (RST#)

• Security-ID Feature

– SST: 128 bits; User: 128 bits

• Fast Read Access Time:

– 70 ns

– 90 ns

• Latched Address and Data

• Fast Erase and Word-Program:

– Sector-Erase Time: 18 ms (typical)

– Block-Erase Time: 18 ms (typical)

– Chip-Erase Time: 40 ms (typical)

– Word-Program Time: 7 µs (typical)

• Automatic Write Timing

– Internal VPP Generation

• End-of-Write Detection

– Toggle Bits

– Data# Polling

• CMOS I/O Compatibility

• JEDEC Standard

– Flash EEPROM Pin Assignments

– Software command sequence compatibility

- Address format is 11 bits, A10-A0

- Block-Erase 6th Bus Write Cycle is 30H

- Sector-Erase 6th Bus Write Cycle is 50H

• Packages Available

– 48-lead TSOP (12mm x 20mm)

– 48-ball TFBGA (8mm x 10mm)

• All non-Pb (lead-free) devices are RoHS compliant

PRODUCT DESCRIPTION

The SST39VF640xB devices are 4M x16 CMOS Multi-

Purpose Flash Plus (MPF+) manufactured with SST’s pro-

prietary, high-performance CMOS SuperFlash technology.

The split-gate cell design and thick-oxide tunneling injector

attain better reliability and manufacturability compared with

alternate approaches. The SST39VF640xB write (Pro-

gram or Erase) with a 2.7-3.6V power supply. These

devices conform to JEDEC standard pin assignments for

x16 memories.

Featuring high performance Word-Program, the

SST39VF640xB devices provide a typical Word-Program

time of 7 µsec. These devices use Toggle Bit or Data# Poll-

ing to indicate the completion of Program operation. To pro-

tect against inadvertent write, they have on-chip hardware

and Software Data Protection schemes. Designed, manu-

factured, and tested for a wide spectrum of applications,

these devices are offered with a guaranteed typical endur-

ance of 100,000 cycles. Data retention is rated at greater

than 100 years.

The SST39VF640xB devices are suited for applications that

require convenient and economical updating of program,

configuration, or data memory. For all system applications,

they significantly improve performance and reliability, while

lowering power consumption. They inherently use less

energy during Erase and Program than alternative flash

technologies. The total energy consumed is a function of

the applied voltage, current, and time of application. Since

for any given voltage range, the SuperFlash technology

uses less current to program and has a shorter erase time,

the total energy consumed during any Erase or Program

operation is less than alternative flash technologies. These

devices also improve flexibility while lowering the cost for

program, data, and configuration storage applications.

The SuperFlash technology provides fixed Erase and Pro-

gram times, independent of the number of Erase/Program

cycles that have occurred. Therefore the system software

or hardware does not have to be modified or de-rated as is

necessary with alternative flash technologies, whose Erase

and Program times increase with accumulated Erase/Pro-

gram cycles.

To meet high-density, surface mount requirements, the

SST39VF640xB devices are offered in 48-lead TSOP and

48-ball TFBGA packages. See Figures 1 and 2 for pin

assignments.

SST39VF640xB2.7V 64Mb (x16) MPF+ memories

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

Device Operation

Commands are used to initiate the memory operation func-

tions of the device. Commands are written to the device

using standard microprocessor write sequences. A com-

mand is written by asserting WE# low while keeping CE#

low. The address bus is latched on the falling edge of WE#

or CE#, whichever occurs last. The data bus is latched on

the rising edge of WE# or CE#, whichever occurs first.

The SST39VF640xB also have the Auto Low Power

mode which puts the device in a near standby mode after

data has been accessed with a valid Read operation. This

reduces the IDD active read current from typically 9 mA to

typically 3 µA. The Auto Low Power mode reduces the typi-

cal IDD active read current to the range of 2 mA/MHz of

Read cycle time. The device exits the Auto Low Power

mode with any address transition or control signal transition

used to initiate another Read cycle, with no access time

penalty. Note that the device does not enter Auto-Low

Power mode after power-up with CE# held steadily low,

until the first address transition or CE# is driven high.

Read

The Read operation of the SST39VF640xB is controlled

by CE# and OE#, both have to be low for the system to

obtain data from the outputs. CE# is used for device

selection. When CE# is high, the chip is deselected and

only standby power is consumed. OE# is the output con-

trol and is used to gate data from the output pins. The

data bus is in high impedance state when either CE# or

OE# is high. Refer to the Read cycle timing diagram for

further details (Figure 3).

Word-Program Operation

The SST39VF640xB are programmed on a word-by-word

basis. Before programming, the sector where the word

exists must be fully erased. The Program operation is

accomplished in three steps. The first step is the three-byte

load sequence for Software Data Protection. The second

step is to load word address and word data. During the

Word-Program operation, the addresses are latched on the

falling edge of either CE# or WE#, whichever occurs last.

The data is latched on the rising edge of either CE# or

WE#, whichever occurs first. The third step is the internal

Program operation which is initiated after the rising edge of

the fourth WE# or CE#, whichever occurs first. The Pro-

gram operation, once initiated, will be completed within 10

µs. See Figures 4 and 5 for WE# and CE# controlled Pro-

gram operation timing diagrams and Figure 19 for flow-

charts. During the Program operation, the only valid reads

are Data# Polling and Toggle Bit. During the internal Pro-

gram operation, the host is free to perform additional tasks.

Any commands issued during the internal Program opera-

tion are ignored. During the command sequence, WP#

should be statically held high or low.

Sector/Block-Erase Operation

The Sector- (or Block-) Erase operation allows the system

to erase the device on a sector-by-sector (or block-by-

block) basis. The SST39VF640xB offer both Sector-Erase

and Block-Erase mode. The sector architecture is based

on uniform sector size of 2 KWord. The Block-Erase mode

is based on uniform block size of 32 KWord. The Sector-

Erase operation is initiated by executing a six-byte com-

mand sequence with Sector-Erase command (50H) and

sector address (SA) in the last bus cycle. The Block-Erase

operation is initiated by executing a six-byte command

sequence with Block-Erase command (30H) and block

address (BA) in the last bus cycle. The sector or block

address is latched on the falling edge of the sixth WE#

pulse, while the command (50H or 30H) is latched on the

rising edge of the sixth WE# pulse. The internal Erase

operation begins after the sixth WE# pulse. The End-of-

Erase operation can be determined using either Data#

Polling or Toggle Bit methods. See Figures 9 and 10 for tim-

ing waveforms and Figure 23 for the flowchart. Any com-

mands issued during the Sector- or Block-Erase operation

are ignored. When WP# is low, any attempt to Sector-

(Block-) Erase the protected block will be ignored. During

the command sequence, WP# should be statically held

high or low.

Erase-Suspend/Erase-Resume Commands

The Erase-Suspend operation temporarily suspends a

Sector- or Block-Erase operation thus allowing data to be

read from any memory location, or program data into any

sector/block that is not suspended for an Erase operation.

The operation is executed by issuing one byte command

sequence with Erase-Suspend command (B0H). The

device automatically enters read mode typically within 20

µs after the Erase-Suspend command had been issued.

Valid data can be read from any sector or block that is not

suspended from an Erase operation. Reading at address

location within erase-suspended sectors/blocks will output

DQ2 toggling and DQ6 at “1”. While in Erase-Suspend

mode, a Word-Program operation is allowed except for the

sector or block selected for Erase-Suspend.

To resume Sector-Erase or Block-Erase operation which has

been suspended the system must issue Erase Resume

command. The operation is executed by issuing one byte

command sequence with Erase Resume command (30H)

at any address in the last Byte sequence.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

Chip-Erase Operation

The SST39VF640xB provide a Chip-Erase operation,

which allows the user to erase the entire memory array to

the “1” state. This is useful when the entire device must be

quickly erased.

The Chip-Erase operation is initiated by executing a six-

byte command sequence with Chip-Erase command

(10H) at address 555H in the last byte sequence. The

Erase operation begins with the rising edge of the sixth

WE# or CE#, whichever occurs first. During the Erase

operation, the only valid read is Toggle Bit or Data# Polling.

See Table 6 for the command sequence, Figure 9 for tim-

ing diagram, and Figure 23 for the flowchart. Any com-

mands issued during the Chip-Erase operation are

ignored. When WP# is low, any attempt to Chip-Erase will

be ignored. During the command sequence, WP# should

be statically held high or low.

Write Operation Status Detection

The SST39VF640xB provide two software means to detect

the completion of a Write (Program or Erase) cycle, in

order to optimize the system write cycle time. The software

detection includes two status bits: Data# Polling (DQ7) and

Toggle Bit (DQ6). The End-of-Write detection mode is

enabled after the rising edge of WE#, which initiates the

internal Program or Erase operation.

The actual completion of the nonvolatile write is asyn-

chronous with the system; therefore, either a Data# Poll-

ing or Toggle Bit read may be simultaneous with the

completion of the write cycle. If this occurs, the system

may possibly get an erroneous result, i.e., valid data may

appear to conflict with either DQ7 or DQ6. In order to pre-

vent spurious rejection, if an erroneous result occurs, the

software routine should include a loop to read the

accessed location an additional two (2) times. If both

reads are valid, then the device has completed the Write

cycle, otherwise the rejection is valid.

Data# Polling (DQ7)

When the SST39VF640xB are in the internal Program

operation, any attempt to read DQ7 will produce the com-

plement of the true data. Once the Program operation is

completed, DQ7 will produce true data. Note that even

though DQ7 may have valid data immediately following the

completion of an internal Write operation, the remaining

data outputs may still be invalid: valid data on the entire

data bus will appear in subsequent successive Read

cycles after an interval of 1 µs. During internal Erase oper-

ation, any attempt to read DQ7 will produce a ‘0’. Once the

internal Erase operation is completed, DQ7 will produce a

‘1’. The Data# Polling is valid after the rising edge of fourth

WE# (or CE#) pulse for Program operation. For Sector-,

Block- or Chip-Erase, the Data# Polling is valid after the

rising edge of sixth WE# (or CE#) pulse. See Figure 6 for

Data# Polling timing diagram and Figure 20 for a flowchart.

Toggle Bits (DQ6 and DQ2)

During the internal Program or Erase operation, any con-

secutive attempts to read DQ6 will produce alternating “1”s

and “0”s, i.e., toggling between 1 and 0. When the internal

Program or Erase operation is completed, the DQ6 bit will

stop toggling. The device is then ready for the next opera-

tion. For Sector-, Block-, or Chip-Erase, the toggle bit (DQ6)

is valid after the rising edge of sixth WE# (or CE#) pulse.

DQ6 will be set to “1” if a Read operation is attempted on an

Erase-Suspended Sector/Block. If Program operation is ini-

tiated in a sector/block not selected in Erase-Suspend

mode, DQ6 will toggle.

An additional Toggle Bit is available on DQ2, which can be

used in conjunction with DQ6 to check whether a particular

sector is being actively erased or erase-suspended. Table 1

shows detailed status bits information. The Toggle Bit

(DQ2) is valid after the rising edge of the last WE# (or CE#)

pulse of Write operation. See Figure 7 for Toggle Bit timing

diagram and Figure 20 for a flowchart.

Note: DQ7 and DQ2 require a valid address when reading

status information.

TABLE 1: WRITE OPERATION STATUS

Status DQ7DQ6DQ2

Normal

Operation

Standard

Program

DQ7# Toggle No Toggle

Standard

Erase

0 Toggle Toggle

Erase-

Suspend

Mode

Read from

Erase-Suspended

Sector/Block

1 1 Toggle

Read from

Non- Erase-Suspended

Sector/Block

Data Data Data

Program DQ7# Toggle N/A

T1.0 1288

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

Data Protection

The SST39VF640xB provide both hardware and software

features to protect nonvolatile data from inadvertent writes.

Hardware Data Protection

Noise/Glitch Protection: A WE# or CE# pulse of less than 5

ns will not initiate a write cycle.

VDD Power Up/Down Detection: The Write operation is

inhibited when VDD is less than 1.5V.

Write Inhibit Mode: Forcing OE# low, CE# high, or WE#

high will inhibit the Write operation. This prevents inadvert-

ent writes during power-up or power-down.

Hardware Block Protection

The SST39VF6402B support top hardware block protec-

tion, which protects the top 32 KWord block of the device.

The SST39VF6401B support bottom hardware block pro-

tection, which protects the bottom 32 KWord block of the

device. The Boot Block address ranges are described in

Table 2. Program and Erase operations are prevented on

the 32 KWord when WP# is low. If WP# is left floating, it is

internally held high via a pull-up resistor, and the Boot

Block is unprotected, enabling Program and Erase opera-

tions on that block.

Hardware Reset (RST#)

The RST# pin provides a hardware method of resetting the

device to read array data. When the RST# pin is held low

for at least TRP, any in-progress operation will terminate and

return to Read mode. When no internal Program/Erase

operation is in progress, a minimum period of TRHR is

required after RST# is driven high before a valid Read can

take place (see Figure 15).

The Erase or Program operation that has been interrupted

needs to be reinitiated after the device resumes normal

operation mode to ensure data integrity.

Software Data Protection (SDP)

The SST39VF640xB provide the JEDEC approved Soft-

ware Data Protection scheme for all data alteration opera-

tions, i.e., Program and Erase. Any Program operation

requires the inclusion of the three-byte sequence. The

three-byte load sequence is used to initiate the Program

operation, providing optimal protection from inadvertent

Write operations, e.g., during the system power-up or

power-down. Any Erase operation requires the inclusion of

six-byte sequence. These devices are shipped with the

Software Data Protection permanently enabled. See Table

6 for the specific software command codes. During SDP

command sequence, invalid commands will abort the

device to read mode within TRC. The contents of DQ15-DQ8

can be VIL or VIH, but no other value, during any SDP com-

mand sequence.

Common Flash Memory Interface (CFI)

The SST39VF640xB also contain the CFI information to

describe the characteristics of the device. In order to enter

the CFI Query mode, the system must write three-byte

sequence, same as product ID entry command with 98H

(CFI Query command) to address 555H in the last byte

sequence. Once the device enters the CFI Query mode,

the system can read CFI data at the addresses given in

Tables 7 through 9. The system must write the CFI Exit

command to return to Read mode from the CFI Query

mode.

TABLE 2: BOOT BLOCK ADDRESS RANGES

Product Address Range

Bottom Boot Block

SST39VF6401B 000000H-007FFFH

Top Boot Block

SST39VF6402B 3F8000H-3FFFFFH

T2.0 1288

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

Product Identification

The Product Identification mode identifies the devices as

the SST39VF6401B and SST39VF6402B, and the manu-

facturer as SST. This mode may be accessed through

software operations. Users may use the Software Product

Identification operation to identify the part (i.e., using the

device ID) when using multiple manufacturers in the same

socket. For details, see Table 6 for software operation,

Figure 11 for the Software ID Entry and Read timing dia-

gram and Figure 21 for the Software ID Entry command

sequence flowchart.

Product Identification Mode Exit/

CFI Mode Exit

In order to return to the standard Read mode, the Software

Product Identification mode must be exited. Exit is accom-

plished by issuing the Software ID Exit command

sequence, which returns the device to the Read mode.

This command may also be used to reset the device to the

Read mode after any inadvertent transient condition that

apparently causes the device to behave abnormally, e.g.,

not read correctly. Please note that the Software ID Exit/

CFI Exit command is ignored during an internal Program or

Erase operation. See Table 6 for software command

codes, Figure 13 for timing waveform, and Figures 21 and

22 for flowcharts.

Security ID

The SST39VF640xB devices offer a 256-bit Security ID

space. The Secure ID space is divided into two 128-bit seg-

ments - one factory programmed segment and one user

programmed segment. The first segment is programmed

and locked at SST with a random 128-bit number. The user

segment is left un-programmed for the customer to pro-

gram as desired.

To program the user segment of the Security ID, the user

must use the Security ID Word-Program command. To

detect end-of-write for the SEC ID, read the toggle bits. Do

not use Data# Polling. Once this is complete, the Sec ID

should be locked using the User Sec ID Program Lock-Out.

This disables any future corruption of this space. Note that

regardless of whether or not the Sec ID is locked, neither

Sec ID segment can be erased.

The Secure ID space can be queried by executing a three-

byte command sequence with Enter Sec ID command

(88H) at address 555H in the last byte sequence. To exit

this mode, the Exit Sec ID command should be executed.

Refer to Table 6 for more details.

TABLE 3: PRODUCT IDENTIFICATION

Address Data

Manufacturer’s ID 0000H BFH

Device ID

SST39VF6401B 0001H 236DH

SST39VF6402B 0001H 236CH

T3.0 1288

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 1: PIN ASSIGNMENTS FOR 48-LEAD TSOP

Y-Decoder

I/O Buffers and Data Latches

1288 B1.0

Address Buffer & Latches

X-Decoder

DQ15 - DQ0

Memory Address

OE#

CE#

WE#

SuperFlash

Memory

Control Logic

WP#

RESET#

FUNCTIONAL BLOCK DIAGRAM

A15

A14

A13

A12

A11

A10

A19

A20

WE#

RST#

A21

WP#

A18

A17

A16

VSS

DQ15

DQ7

DQ14

DQ6

DQ13

DQ5

DQ12

DQ4

VDD

DQ11

DQ3

DQ10

DQ2

DQ9

DQ1

DQ8

DQ0

OE#

VSS

CE#

1288 48-tsop P1.0

Standard Pinout

Top View

Die Up

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 2: PIN ASSIGNMENTS FOR 48-BALL TFBGA

TABLE 4: PIN DESCRIPTION

Symbol Pin Name Functions

AMS1-A0

1. AMS = Most significant address

AMS = A21 for SST39VF640xB

Address Inputs To provide memory addresses.

During Sector-Erase AMS-A11 address lines will select the sector.

During Block-Erase AMS-A15 address lines will select the block.

DQ15-DQ0Data Input/output To output data during Read cycles and receive input data during Write cycles.

Data is internally latched during a Write cycle.

The outputs are in tri-state when OE# or CE# is high.

WP# Write Protect To protect the top/bottom boot block from Erase/Program operation when grounded.

RST# Reset To reset and return the device to Read mode.

CE# Chip Enable To activate the device when CE# is low.

OE# Output Enable To gate the data output buffers.

WE# Write Enable To control the Write operations.

VDD Power Supply To provide power supply voltage: 2.7-3.6V

VSS Ground

NC No Connection Unconnected pins.

T4.0 1288

1288 4-tfbga B1K P2.0

A B C D E F G H

TOP VIEW (balls facing down)

A13

WE#

A12

RST#

WP#

A17

A14

A10

A21

A18

A15

A11

A19

A20

A16

DQ7

DQ5

DQ2

DQ0

DQ14

DQ12

DQ10

DQ8

CE#

DQ15

DQ13

VDD

DQ11

DQ9

OE#

VSS

DQ6

DQ4

DQ3

DQ1

VSS

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

TABLE 5: OPERATION MODES SELECTION

Mode CE# OE# WE# DQ Address

Read VIL VIL VIH DOUT AIN

Program VIL VIH VIL DIN AIN

Erase VIL VIH VIL X1Sector or block address,

XXH for Chip-Erase

Standby VIH X X High Z X

Write Inhibit X VIL X High Z/ DOUT X

XXV

IH High Z/ DOUT X

Product Identification

Software Mode VIL VIL VIH See Table 6

T5.0 1288

1. X can be VIL or VIH, but no other value.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

TABLE 6: SOFTWARE COMMAND SEQUENCE

Command

Sequence

1st Bus

Write Cycle

2nd Bus

Write Cycle

3rd Bus

Write Cycle

4th Bus

Write Cycle

5th Bus

Write Cycle

6th Bus

Write Cycle

Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2Addr1Data2

Word-Program 555H AAH 2AAH 55H 555H A0H WA3Data

Sector-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H SAX450H

Block-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H BAX430H

Chip-Erase 555H AAH 2AAH 55H 555H 80H 555H AAH 2AAH 55H 555H 10H

Erase-Suspend XXXXH B0H

Erase-Resume XXXXH 30H

Query Sec ID5555H AAH 2AAH 55H 555H 88H

User Security ID

Word-Program

555H AAH 2AAH 55H 555H A5H WA6Data

User Security ID

Program Lock-Out

555H AAH 2AAH 55H 555H 85H XXH60000H

Software ID Entry7,8 555H AAH 2AAH 55H 555H 90H

CFI Query Entry 555H AAH 2AAH 55H 555H 98H

Software ID Exit9,10

/CFI Exit/Sec ID Exit

555H AAH 2AAH 55H 555H F0H

Software ID Exit9,10

/CFI Exit/Sec ID Exit

XXH F0H

T6.0 1288

1. Address format A10-A0 (Hex).

Addresses A11- A21 can be VIL or VIH, but no other value, for Command sequence for SST39VF640xB.

2. DQ15-DQ8 can be VIL or VIH, but no other value, for Command sequence

3. WA = Program Word address

4. SAX for Sector-Erase; uses AMS-A11 address lines

BAX, for Block-Erase; uses AMS-A15 address lines

AMS = Most significant address

AMS = A21 for SST39VF640xB

5. With AMS-A4 = 0; Sec ID is read with A3-A0,

SST ID is read with A3 = 0 (Address range = 000000H to 000007H),

User ID is read with A3 = 1 (Address range = 000010H to 000017H).

Lock Status is read with A7-A0 = 0000FFH. Unlocked: DQ3 = 1 / Locked: DQ3 = 0.

6. Valid Word-Addresses for Sec ID are from 000000H-000007H and 000010H-000017H.

7. The device does not remain in Software Product ID Mode if powered down.

8. With AMS-A1 =0; SST Manufacturer ID = 00BFH, is read with A0 = 0,

SST39VF6401B Device ID = 236DH, is read with A0 = 1,

SST39VF6402B Device ID = 236CH, is read with A0 = 1.

AMS = Most significant address

AMS = A21 for SST39VF640xB

9. Both Software ID Exit operations are equivalent

10. If users never lock after programming, Sec ID can be programmed over the previously unprogrammed bits (data=1) using the Sec ID

mode again (the programmed “0” bits cannot be reversed to “1”). Valid Word-Addresses for Sec ID are from 000000H-000007H and

000010H-000017H.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

TABLE 7: CFI QUERY IDENTIFICATION STRING1 FOR SST39VF640XB

Address Data Data

10H 0051H Query Unique ASCII string “QRY”

11H 0052H

12H 0059H

13H 0002H Primary OEM command set

14H 0000H

15H 0000H Address for Primary Extended Table

16H 0000H

17H 0000H Alternate OEM command set (00H = none exists)

18H 0000H

19H 0000H Address for Alternate OEM extended Table (00H = none exits)

1AH 0000H

T7.0 1288

1. Refer to CFI publication 100 for more details.

TABLE 8: SYSTEM INTERFACE INFORMATION FOR SST39VF640XB

Address Data Data

1BH 0027H VDD Min (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1CH 0036H VDD Max (Program/Erase)

DQ7-DQ4: Volts, DQ3-DQ0: 100 millivolts

1DH 0000H VPP min. (00H = no VPP pin)

1EH 0000H VPP max. (00H = no VPP pin)

1FH 0003H Typical time out for Word-Program 2N µs (23 = 8 µs)

20H 0000H Typical time out for min. size buffer program 2N µs (00H = not supported)

21H 0004H Typical time out for individual Sector/Block-Erase 2N ms (24 = 16 ms)

22H 0005H Typical time out for Chip-Erase 2N ms (25 = 32 ms)

23H 0001H Maximum time out for Word-Program 2N times typical (21 x 23 = 16 µs)

24H 0000H Maximum time out for buffer program 2N times typical

25H 0001H Maximum time out for individual Sector/Block-Erase 2N times typical (21 x 24 = 32 ms)

26H 0001H Maximum time out for Chip-Erase 2N times typical (21 x 25 = 64 ms)

T8.0 1288

TABLE 9: DEVICE GEOMETRY INFORMATION FOR SST39VF640XB

Address Data Data

27H 0017H Device size = 2N Bytes (17H = 23; 223 = 8 MByte)

28H 0001H Flash Device Interface description; 0001H = x16-only asynchronous interface

29H 0000H

2AH 0000H Maximum number of bytes in multi-byte write = 2N (00H = not supported)

2BH 0000H

2CH 0002H Number of Erase Sector/Block sizes supported by device

2DH 00FFH Sector Information (y + 1 = Number of sectors; z x 256B = sector size)

2EH 0007H y = 2047 + 1 = 2048 sectors (07FFH = 2047)

2FH 0010H

30H 0000H z = 16 x 256 Bytes = 4 KBytes/sector (0010H = 16)

31H 007FH Block Information (y + 1 = Number of blocks; z x 256B = block size)

32H 0000H y =127 + 1 = 128 blocks (007FH = 127)

33H 0000H

34H 0001H z = 256 x 256 Bytes = 64 KBytes/block (0100H = 256)

T9.0 1288

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

Absolute Maximum Stress Ratings (Applied conditions greater than those listed under “Absolute Maximum

Stress Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation

of the device at these conditions or conditions greater than those defined in the operational sections of this data

sheet is not implied. Exposure to absolute maximum stress rating conditions may affect device reliability.)

Temperature Under Bias . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55°C to +125°C

Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65°C to +150°C

D. C. Voltage on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to VDD+0.5V

Transient Voltage (<20 ns) on Any Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -2.0V to VDD+2.0V

Voltage on A9 Pin to Ground Potential . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 13.2V

Package Power Dissipation Capability (TA = 25°C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.0W

Surface Mount Solder Reflow Temperature1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C for 10 seconds

Output Short Circuit Current2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA

1. Excluding certain with-Pb 32-PLCC units, all packages are 260°C capable in both non-Pb and with-Pb solder versions.

Certain with-Pb 32-PLCC package types are capable of 240°C for 10 seconds; please consult the factory for the latest information.

2. Outputs shorted for no more than one second. No more than one output shorted at a time.

OPERATING RANGE

Range Ambient Temp VDD

Commercial

Industrial

0°C to +70°C

-40°C to +85°C

2.7-3.6V

AC CONDITIONS OF TEST

Input Rise/Fall Time . . . . . . . . . . . . . . 5 ns

Output Load . . . . . . . . . . . . . . . . . . . . CL = 30 pF

See Figures 17 and 18

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

TABLE 10: DC OPERATING CHARACTERISTICS VDD = 2.7-3.6V1

Symbol Parameter

Limits

Test ConditionsMin Max Units

IDD Power Supply Current Address input=VILT/VIHT2, at f=5 MHz,

VDD=VDD Max

Read318 mA CE#=VIL, OE#=WE#=VIH, all I/Os open

Program and Erase 35 mA CE#=WE#=VIL, OE#=VIH

ISB Standby VDD Current 20 µA CE#=VIHC, VDD=VDD Max

IALP Auto Low Power 20 µA CE#=VILC, VDD=VDD Max

All inputs=VSS or VDD, WE#=VIHC

ILI Input Leakage Current 1 µA VIN=GND to VDD, VDD=VDD Max

ILIW Input Leakage Current

on WP# pin and RST#

10 µA WP#=GND to VDD or RST#=GND to VDD

ILO Output Leakage Current 10 µA VOUT=GND to VDD, VDD=VDD Max

VIL Input Low Voltage 0.8 V VDD=VDD Min

VILC Input Low Voltage (CMOS) 0.3 V VDD=VDD Max

VIH Input High Voltage 0.7VDD VV

DD=VDD Max

VIHC Input High Voltage (CMOS) VDD-0.3 V VDD=VDD Max

VOL Output Low Voltage 0.2 V IOL=100 µA, VDD=VDD Min

VOH Output High Voltage VDD-0.2 V IOH=-100 µA, VDD=VDD Min

T10.0 1288

1. Typical conditions for the Active Current shown on the front page of the data sheet are average values at 25°C

(room temperature), and VDD = 3V. Not 100% tested.

2. See Figure 17

3. The IDD current listed is typically less than 2mA/MHz, with OE# at VIH. Ty pi c a l VDD is 3V.

TABLE 11: RECOMMENDED SYSTEM POWER-UP TIMINGS

Symbol Parameter Minimum Units

TPU-READ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

Power-up to Read Operation 100 µs

TPU-WRITE1Power-up to Program/Erase Operation 100 µs

T11.0 1288

TABLE 12: CAPACITANCE (TA = 25°C, f=1 Mhz, other pins open)

Parameter Description Test Condition Maximum

CI/O1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

I/O Pin Capacitance VI/O = 0V 12 pF

CIN1Input Capacitance VIN = 0V 6 pF

T12.0 1288

TABLE 13: RELIABILITY CHARACTERISTICS

Symbol Parameter Minimum Specification Units Test Method

NEND1,2

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

2. NEND endurance rating is qualified as a 10,000 cycle minimum for the whole device. A sector- or block-level rating would result in a

higher minimum specification.

Endurance 10,000 Cycles JEDEC Standard A117

TDR1Data Retention 100 Years JEDEC Standard A103

ILTH1Latch Up 100 + IDD mA JEDEC Standard 78

T13.0 1288

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

AC CHARACTERISTICS

TABLE 14: READ CYCLE TIMING PARAMETERS VDD = 2.7-3.6V

Symbol Parameter

SST39VF640xB-70 SST39VF640xB-90

UnitsMin Max Min Max

TRC Read Cycle Time 70 90 ns

TCE Chip Enable Access Time 70 90 ns

TAA Address Access Time 70 90 ns

TOE Output Enable Access Time 35 45 ns

TCLZ1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

CE# Low to Active Output 0 0 ns

TOLZ1OE# Low to Active Output 0 0 ns

TCHZ1CE# High to High-Z Output 20 30 ns

TOHZ1OE# High to High-Z Output 20 30 ns

TOH1Output Hold from Address Change 0 0 ns

TRP1RST# Pulse Width 500 500 ns

TRHR1RST# High before Read 50 50 ns

TRY1,2

2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.

This parameter does not apply to Chip-Erase operations.

RST# Pin Low to Read Mode 20 20 µs

T14.0 1288

TABLE 15: PROGRAM/ERASE CYCLE TIMING PARAMETERS

Symbol Parameter Min Max Units

TBP Word-Program Time 10 µs

TAS Address Setup Time 0 ns

TAH Address Hold Time 30 ns

TCS WE# and CE# Setup Time 0 ns

TCH WE# and CE# Hold Time 0 ns

TOES OE# High Setup Time 0 ns

TOEH OE# High Hold Time 10 ns

TCP CE# Pulse Width 40 ns

TWP WE# Pulse Width 40 ns

TWPH1

1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.

WE# Pulse Width High 30 ns

TCPH1CE# Pulse Width High 30 ns

TDS Data Setup Time 30 ns

TDH1Data Hold Time 0 ns

TIDA1Software ID Access and Exit Time 150 ns

TSE Sector-Erase 25 ms

TBE Block-Erase 25 ms

TSCE Chip-Erase 50 ms

T15.0 1288

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 3: READ CYCLE TIMING DIAGRAM

FIGURE 4: WE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM

1288 F03.0

ADDRESS AMS-0

DQ15-0

WE#

OE#

CE# TCE

TRC TAA

TOE

TOLZVIH

HIGH-Z TCLZ TOH

TCHZ

HIGH-Z

DATA VALIDDATA VALID

TOHZ

Note: AMS = Most significant address

AMS = A21 for SST39VF640xB

1288 F04.0

ADDRESS AMS-0

DQ15-0

TDH

TWPH

TDS

TWP

TAH

TAS

TCH

TCS

CE#

SW0 SW1 SW2

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

INTERNAL PROGRAM OPERATION STARTS

WORD

(ADDR/DATA)

OE#

WE#

TBP

Note: AMS = Most significant address

AMS = A21 for SST39VF640xB

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 5: CE# CONTROLLED PROGRAM CYCLE TIMING DIAGRAM

FIGURE 6: DATA# POLLING TIMING DIAGRAM

1288 F05.0

ADDRESS AMS-0

DQ15-0

TDH

TCPH

TDS

TCP

TAH

TAS

TCH

TCS

WE#

SW0 SW1 SW2

555 2AA 555 ADDR

XXAA XX55 XXA0 DATA

INTERNAL PROGRAM OPERATION STARTS

WORD

(ADDR/DATA)

OE#

CE#

TBP

Note: AMS = Most significant address

AMS = A21 for SST39VF640xB

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

1288 F06.0

ADDRESS AMS-0

DQ7DATA DATA# DATA# DATA

WE#

OE#

CE#

TOEH

TOE

TCE

TOES

Note: AMS = Most significant address

AMS = A21 for SST39VF640xB

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 7: TOGGLE BITS TIMING DIAGRAM

FIGURE 8: WE# CONTROLLED CHIP-ERASE TIMING DIAGRAM

1288 F07.0

ADDRESS AMS-0

DQ6 and DQ2

WE#

OE#

CE#

TOETOEH

TCE

TOES

TWO READ CYCLES

WITH SAME OUTPUTS

Note: AMS = Most significant address

AMS = A21 for SST39VF640xB

1288 F08.0

ADDRESS AMS-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

555 2AA 2AA555 555

XX55 XX10XX55XXAA XX80 XXAA

555

OE#

CE#

SIX-BYTE CODE FOR CHIP-ERASE

TSCE

TWP

Note: This device also supports CE# controlled Chip-Erase operation The WE# and CE# signals are

interchangeable as long as minimum timings are met. (See Table 15)

AMS = Most significant address

AMS = A21 for SST39VF640xB

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 9: WE# CONTROLLED BLOCK-ERASE TIMING DIAGRAM

FIGURE 10: WE# CONTROLLED SECTOR-ERASE TIMING DIAGRAM

1288 F09.0

ADDRESS AMS-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

555 2AA 2AA555 555

XX55 XX30XX55XXAA XX80 XXAA

BAX

OE#

CE#

SIX-BYTE CODE FOR BLOCK-ERASE

TBE

TWP

Note: This device also supports CE# controlled Block-Erase operation The WE# and CE# signals are

interchangeable as long as minimum timings are met. (See Table 15)

BAX = Block Address

AMS = Most significant address

AMS = A21 for SST39VF640xB

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

1288 F10.0

ADDRESS AMS-0

DQ15-0

WE#

SW0 SW1 SW2 SW3 SW4 SW5

555 2AA 2AA555 555

XX55 XX50XX55XXAA XX80 XXAA

SAX

OE#

CE#

SIX-BYTE CODE FOR SECTOR-ERASE

TSE

TWP

Note: This device also supports CE# controlled Sector-Erase operation The WE# and CE# signals are

interchangeable as long as minimum timings are met. (See Table 15)

SAX = Sector Address

AMS = Most significant address

AMS = A21 for SST39VF640xB

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 11: SOFTWARE ID ENTRY AND READ

FIGURE 12: CFI QUERY ENTRY AND READ

1288 F11.0

ADDRESS A14-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

555 2AA 555 0000 0001

OE#

CE#

Three-Byte Sequence for Software ID Entry

TWP

TWPH TAA

00BF

Device ID

XX55XXAA XX90

Note: Device ID = 236DH for SST39VF6401B and 236CH for SST39VF6402B

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

1288 F12.0

ADDRESS A14-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

555 2AA 555

OE#

CE#

Three-Byte Sequence for CFI Query Entry

TWP

TWPH TAA

XX55XXAA XX98

Note: WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 13: SOFTWARE ID EXIT/CFI EXIT

FIGURE 14: SEC ID ENTRY

1288 F13.0

ADDRESS A14-0

DQ15-0

TIDA

TWP

TWHP

WE#

SW0 SW1 SW2

555 2AA 555

THREE-BYTE SEQUENCE FOR

SOFTWARE ID EXIT AND RESET

OE#

CE#

XXAA XX55 XXF0

Note: WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

1288 F14.0

ADDRESS AMS-0

TIDA

DQ15-0

WE#

SW0 SW1 SW2

555 2AA 555

OE#

CE#

THREE-BYTE SEQUENCE FOR

CFI QUERY ENTRY

TWP

TWPH TAA

XX55XXAA XX88

Note: AMS = Most significant address

AMS = A21 for SST39VF640xB

WP# must be held in proper logic state (VIL or VIH) 1 µs prior to and 1 µs after the command sequence.

X can be VIL or VIH, but no other value.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 15: RST# TIMING DIAGRAM (WHEN NO INTERNAL OPERATION IS IN PROGRESS)

FIGURE 16: RST# TIMING DIAGRAM (DURING PROGRAM OR ERASE OPERATION)

1288 F15.0

RST#

CE#/OE#

TRP

TRHR

1288 F16.0

RST#

CE#/OE#

TRP

TRY

End-of-Write Detection

(Toggle-Bit)

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 17: AC INPUT/OUTPUT REFERENCE WAVEFORMS

FIGURE 18: A TEST LOAD EXAMPLE

1288 F17.0

REFERENCE POINTS OUTPUTINPUT VIT

VIHT

VILT

VOT

AC test inputs are driven at VIHT (0.9 VDD) for a logic “1” and VILT (0.1 VDD) for a logic “0”. Measurement reference points

for inputs and outputs are VIT (0.5 VDD) and VOT (0.5 VDD). Input rise and fall times (10% ↔ 90%) are <5 ns.

Note: VIT - VINPUT Te s t

VOT - VOUTPUT Tes t

VIHT - VINPUT HIGH Test

VILT - VINPUT LOW Test

1288 F18.0

TO TESTER

TO DUT

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 19: WORD-PROGRAM ALGORITHM

1288 F19.0

Start

Load data: XXAAH

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XXA0H

Address: 555H

Load Word

Address/Word

Data

Wait for end of

Program (TBP,

Data# Polling

bit, or Toggle bit

operation)

Program

Completed

X can be VIL or VIH, but no other value

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 20: WAIT OPTIONS

1288 F20.0

Wait TBP,

TSCE, TSE

or TBE

Program/Erase

Initiated

Internal Timer Toggle Bit

Ye s

Program/Erase

Completed

Does DQ6

match?

Read same

word

Data# Polling

Program/Erase

Completed

Program/Erase

Completed

Read word

Is DQ7 =

true data?

Read DQ7

Program/Erase

Initiated

Program/Erase

Initiated

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 21: SOFTWARE ID/CFI ENTRY COMMAND FLOWCHARTS

1288 F21.0

Load data: XXAAH

Address: 555H

Software Product ID Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX90H

Address: 555H

Wait TIDA

Read Software ID

Load data: XXAAH

Address: 555H

CFI Query Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX98H

Address: 555H

Wait TIDA

Read CFI data

Load data: XXAAH

Address: 555H

Sec ID Query Entry

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX88H

Address: 555H

Wait TIDA

Read Sec ID

X can be VIL or VIH, but no other value

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 22: SOFTWARE ID/CFI EXIT COMMAND FLOWCHARTS

1288 F22.0

Load data: XXAAH

Address: 555H

Software ID Exit/CFI Exit/Sec ID Exit

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XXF0H

Address: 555H

Load data: XXF0H

Address: XXH

Return to normal

operation

Wait TIDA

Return to normal

operation

X can be VIL or VIH, but no other value

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

FIGURE 23: ERASE COMMAND SEQUENCE

1288 F23.0

Load data: XXAAH

Address: 555H

Chip-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX10H

Address: 555H

Load data: XXAAH

Address: 555H

Wait TSCE

Chip erased

to FFFFH

Load data: XXAAH

Address: 555H

Sector-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX50H

Address: SAX

Load data: XXAAH

Address: 555H

Wait TSE

Sector erased

to FFFFH

Load data: XXAAH

Address: 555H

Block-Erase

Command Sequence

Load data: XX55H

Address: 2AAH

Load data: XX80H

Address: 555H

Load data: XX55H

Address: 2AAH

Load data: XX30H

Address: BAX

Load data: XXAAH

Address: 555H

Wait TBE

Block erased

to FFFFH

X can be VIL or VIH, but no other value

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

PRODUCT ORDERING INFORMATION

Environmental Attribute

E1 = non-Pb

Package Modifier

K = 48 balls or leads

Package Type

E = TSOP (type1, die up, 12mm x 20mm)

B1 = TFBGA (8mm x 10mm, 0.8mm pitch)

Temperature Range

C = Commercial = 0°C to +70°C

I = Industrial = -40°C to +85°C

Minimum Endurance

4 = 10,000 cycles

Read Access Speed

70 = 70 ns

90 = 90 ns

Hardware Block Protection

1 = Bottom Boot-Block

2 = Top Boot-Block

Device Density

640 = 64 Mbit

Voltage

V = 2.7-3.6V

Product Series

39 = Multi-Purpose Flash Plus

1. Environmental suffix “E” denotes non-Pb solder.

SST non-Pb solder devices are “RoHS Compliant”.

SST 39 VF 6402B - 70 - 4C - EK E

XX XX XXXXB - XXX -XX-XXX X

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

Valid Combinations for SST39VF6401B

SST39VF6401B-70-4C-EK SST39VF6401B-70-4C-B1K

SST39VF6401B-70-4C-EKE SST39VF6401B-70-4C-B1KE

SST39VF6401B-90-4C-EK SST39VF6401B-90-4C-B1K

SST39VF6401B-90-4C-EKE SST39VF6401B-90-4C-B1KE

SST39VF6401B-70-4I-EK SST39VF6401B-70-4I-B1K

SST39VF6401B-70-4I-EKE SST39VF6401B-70-4I-B1KE

SST39VF6401B-90-4I-EK SST39VF6401B-90-4I-B1K

SST39VF6401B-90-4I-EKE SST39VF6401B-90-4I-B1KE

Valid Combinations for SST39VF6402B

SST39VF6402B-70-4C-EK SST39VF6402B-70-4C-B1K

SST39VF6402B-70-4C-EKE SST39VF6402B-70-4C-B1KE

SST39VF6402B-90-4C-EK SST39VF6402B-90-4C-B1K

SST39VF6402B-90-4C-EKE SST39VF6402B-90-4C-B1KE

SST39VF6402B-70-4I-EK SST39VF6402B-70-4I-B1K

SST39VF6402B-70-4I-EKE SST39VF6402B-70-4I-B1KE

SST39VF6402B-90-4I-EK SST39VF6402B-90-4I-B1K

SST39VF6402B-90-4I-EKE SST39VF6402B-90-4I-B1KE

Note: Valid combinations are those products in mass production or will be in mass production. Consult your SST sales

representative to confirm availability of valid combinations and to determine availability of new combinations.

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

PACKAGING DIAGRAMS

48-LEAD THIN SMALL OUTLINE PACKAGE (TSOP) 12MM X 20MM

SST PACKAGE CODE: EK

1.05

0.95

0.70

0.50

18.50

18.30

20.20

19.80

0.70

0.50

12.20

11.80

0.27

0.17

0.15

0.05

48-tsop-EK-8

Note: 1. Complies with JEDEC publication 95 MO-142 DD dimensions,

although some dimensions may be more stringent.

2. All linear dimensions are in millimeters (max/min).

3. Coplanarity: 0.1 mm

4. Maximum allowable mold flash is 0.15 mm at the package ends, and 0.25 mm between leads.

1.20

max.

1mm

0˚- 5˚

DETAIL

Pin # 1 Identifier

0.50

BSC

Data Sheet

64 Mbit Multi-Purpose Flash Plus

SST39VF6401B / SST39VF6402B

48-BALL THIN-PROFILE, FINE-PITCH BALL GRID ARRAY (TFBGA) 8MM X 10MM

SST PACKAGE CODE: B1K

TABLE 16: REVISION HISTORY

Number Description Date

00 •Initial release Mar 2005

01 •Clarified JEDEC software command compatibility on page 1 May 2005

02 •Changed document phase from Preliminary Information to Data Sheet Jul 2006

A1 CORNER

BOTTOM VIEWTOP VIEW

8.00 ± 0.20

A1 CORNER

10.00 ± 0.20

H G F E D C B A

A B C D E F G H

0.45 ± 0.05

(48X)

0.80

4.00

0.80

5.60

48-tfbga-B1K-8x10-450mic-4

Note: 1. Although many dimensions are similar to those of JEDEC Publication 95, MO-210, this specific package is not registered.

2. All linear dimensions are in millimeters.

3. Coplanarity: 0.12 mm

4. Ball opening size is 0.38 mm (± 0.05 mm)

1mm

SIDE VIEW

SEATING PLANE 0.35 ± 0.05

1.10 ± 0.10

0.12

Silicon Storage Technology, Inc. • 1171 Sonora Court • Sunnyvale, CA 94086 • Telephone 408-735-9110 • Fax 408-735-9036