DSEP12-12A
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Single Diode
HiPerFRED
13
Part number
DSEP12-12A
Backside: cathode
FAV
rr
t ns40
RRM
12
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20160928cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSEP12-12A
ns
6 A
T
VJ
= °C
reverse recovery time
A9
40
140 ns
I
RM
max. reverse recovery current
I
F
= A;15 25
T = 100°C
VJ
-di
F
= A/µs200/dt
t
rr
V
R
= V600 T
VJ
= °C25
T = 100°C
VJ
V = V
Symbol
Definition
Ratings
typ.
max.
I
R
IA
V
F
2.62
R1.6 K/W
R
min.
12
V
RSM
100T = 25°C
VJ
T = °C
VJ
mA0.5V = V
R
T = 25°C
VJ
I = A
F
T = °C
C
135
P
tot
95 WT = 25°C
C
RK/W0.50
15
1200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions
Unit
3.19
T = 25°C
VJ
150
V
F0
1.03T = °C
VJ
175
r
F
46
mΩ
1.87T = °C
VJ
I = A
F
15 2.56
I = A
F
30
I = A
F
30
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
5
junction capacitance
V = V600 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current
V = 0 V
R
T = °C
VJ
175
90 A
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
1200
IXYS reserves the right to change limits, conditions and dimensions. 20160928cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSEP12-12A
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Marking
Assembly Line
DSEP15-12CR ISOPLUS247 (2) 1200
Package
T
op
°C
M
D
Nm0.6
mounting torque
0.4
T
VJ
°C175
virtual junction temperature
-55
Weight g2
Symbol
Definition
typ.
max.
min.
Conditions
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
150-55
TO-220
Similar Part Package Voltage class
DSEP12-12B TO-220AC (2) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on ProductOrdering DSEP12-12A 470465Tube 50DSEP12-12AStandard
T
stg
°C150
storage temperature
-55
threshold voltage
V1.03 mΩ
V
0 max
R
0 max
slope resistance *
43
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Fast
Diode
175°C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20160928cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSEP12-12A
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
2x b2
E
ØP
Q
D
L1
L
2x b eC
A2
H1
A1
A
1 3
4
= supplier option
13
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20160928cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved
DSEP12-12A
200 600 10000 400 800
100
120
140
160
180
1 10 100 1000 10000
0.0
0.4
0.8
1.2
1.6
2.0
0 40 80 120 160
0.0
0.5
1.0
1.5
2.0
K
f
T
VJ
[°C]
t [ms]
0 200 400 600 800 1000
0
40
80
120
0.0
0.4
0.8
1.2
V
FR
[V]
200 600 10000 400 800
0
10
20
30
40
5
0
100 1000
0.0
0.5
1.0
1.5
2.0
2.5
3
.
0
0 1 2 3 4
0
5
10
15
20
25
30
35
40
I
RM
[A]
Q
r
[µC]
I
F
[A]
V
F
[V]
-di
F
/dt [A/µs]
t
rr
[ns]
t
fr
[µs]
Z
thJC
[K/W]
-di
F
/dt [A/µs]
-di
F
/dt [A/µs] -di
F
/dt [A/µs]
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Q
r
versus -di
F
/dt Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Q
r
, I
RM
versus T
VJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Transient thermal impedance junction to case
t
fr
V
FR
I
RM
Q
r
T
VJ
= 25°C
100°C
150°C
T
VJ
= 100°C
V
R
= 600 V
I
F
= 30 A
15 A
7.5 A
T
VJ
= 100°C
V
R
= 600 V
I
F
= 30 A
15 A
7.5 A
T
VJ
= 100°C
V
R
= 600 V
I
F
= 30 A
15 A
7.5 A
T
VJ
= 100°C
I
F
= 15 A
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.160 0.0010
2 0.100 0.0150
3 0.500 0.0040
4 0.840 0.1200
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20160928cData according to IEC 60747and per semiconductor unless otherwise specified
© 2016 IXYS all rights reserved