PD - 97482 AUIRF1324 AUTOMOTIVE GRADE HEXFET(R) Power MOSFET Features l l l l l l l D Advanced Process Technology Ultra Low On-Resistance 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS RDS(on) typ. max. ID (Silicon Limited) 24V 1.2m: 1.5m: 353A ID (Package Limited) 195A c Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications. S D G TO-220AB AUIRF1324 G D S Gate Drain Source Absolute Maximum Ratings Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25C, unless otherwise specified. Symbol ID @ TC = 25C ID @ TC = 100C ID @ TC = 25C IDM PD @TC = 25C VGS EAS IAR EAR Parameter d Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy (Thermally Limited) Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting torque, 6-32 or M3 screw d f dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) e e 0.46 -55 to + 175 Symbol Parameter j Junction-to-Case Case-to-Sink, Flat Greased Surface Junction-to-Ambient A W W/C V mJ A mJ V/ns C 300 10lb in (1.1N m) x Thermal Resistance RJC RCS RJA Units c c 353 249 195 1412 300 2.0 20 270 See Fig. 14, 15, 22a, 22b x Typ. Max. Units --- 0.50 --- 0.50 --- 62 C/W HEXFET(R) is a registered trademark of International Rectifier. *Qualification standards can be found at http://www.irf.com/ www.irf.com 1 03/29/2010 AUIRF1324 Static Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) gfs RG IDSS IGSS Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Internal Gate Resistance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units 24 --- --- 2.0 180 --- --- --- --- --- --- 22 1.2 --- --- 2.3 --- --- --- --- Conditions --- V VGS = 0V, ID = 250A --- mV/C Reference to 25C, ID = 5.0mA 1.5 m VGS = 10V, ID = 195A 4.0 V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 195A --- 20 A VDS = 24V, VGS = 0V VDS = 24V, VGS = 0V, TJ = 125C 250 200 nA VGS = 20V VGS = -20V -200 d g Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise specified) Symbol Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Conditions Min. Typ. Max. Units Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) --- --- --- --- Turn-On Delay Time --- Rise Time --- Turn-Off Delay Time --- Fall Time --- Input Capacitance --- Output Capacitance --- Reverse Transfer Capacitance --- Effective Output Capacitance (Energy Related) --- Effective Output Capacitance (Time Related) --- 160 84 49 76 17 190 83 120 7590 3440 1960 4700 4490 240 --- --- --- --- --- --- --- --- --- --- --- --- nC ns pF ID = 195A VDS = 12V VGS = 10V ID = 195A, VDS =0V, VGS = 10V VDD = 16V ID = 195A RG = 2.7 VGS = 10V VGS = 0V VDS = 24V = 1.0 MHz, See Fig. 5 VGS = 0V, VDS = 0V to 19V , See Fig. 11 VGS = 0V, VDS = 0V to 19V g g i h Diode Characteristics Symbol IS Parameter VSD trr Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time ISM d Notes: Calcuted continuous current based on maximum allowable junction temperature Bond wire current limit is 195A. Note that current limitation arising from heating of the device leds may occur with some lead mounting arrangements. Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.014mH RG = 25, IAS = 195A, VGS =10V. Part not recommended for use above this value . ISD 195A, di/dt 450 A/s, VDD V(BR)DSS, TJ 175C. 2 Conditions Min. Typ. Max. Units --- --- 353 --- --- c 1412 A MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 195A, VGS = 0V VR = 20V, TJ = 25C TJ = 125C IF = 195A TJ = 25C di/dt = 100A/s TJ = 125C TJ = 25C g D S --- --- 1.3 V --- 46 --- ns --- 71 --- --- 160 --- nC --- 430 --- --- 7.7 --- A Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) g Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90C www.irf.com AUIRF1324 Qualification Information Automotive (per AEC-Q101) Qualification Level Moisture Sensitivity Level Comments: This part number(s) passed Automotive qualification. IR's Industrial and Consumer qualification level is granted by extension of the higher Automotive level. D2Pak MSL1 TO-262 Machine Model N/A Class M4 AEC-Q101-002 ESD Human Body Model Class H3A AEC-Q101-001 Charged Device Model Class C5 AEC-Q101-005 RoHS Compliant Yes Qualification standards can be found at International Rectifiers web site: http//www.irf.com/ Exceptions to AEC-Q101 requirements are noted in the qualification report. www.irf.com 3 AUIRF1324 10000 60s PULSE WIDTH Tj = 25C 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V TOP 100 BOTTOM 60s PULSE WIDTH VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V TOP Tj = 175C ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) 10000 1000 10 BOTTOM 100 1 4.0V 4.0V 0.1 10 0.1 1 10 100 0.1 V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 100 2.0 100 T J = 175C T J = 25C 10 1 VDS = 15V 60s PULSE WIDTH 0.1 ID = 195A VGS = 10V 1.5 1.0 0.5 2 3 4 5 6 7 8 9 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Junction Temperature (C) VGS, Gate-to-Source Voltage (V) Fig 4. Normalized On-Resistance vs. Temperature Fig 3. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED C rss = C gd VGS, Gate-to-Source Voltage (V) ID= 195A C oss = C ds + C gd C, Capacitance (pF) 10 Fig 2. Typical Output Characteristics 1000 Ciss Coss 10000 Crss 12.0 VDS= 19V VDS= 12V 10.0 8.0 6.0 4.0 2.0 0.0 1000 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage 4 1 V DS, Drain-to-Source Voltage (V) 0 50 100 150 200 QG, Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage www.irf.com AUIRF1324 10000 ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1000 T J = 175C 100 T J = 25C 10 OPERATION IN THIS AREA LIMITED BY R DS(on) 1000 100sec 1msec 100 Limited by package 10msec 10 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.0 0.5 1.0 1 1.5 Fig 7. Typical Source-Drain Diode Forward Voltage 300 250 200 150 100 50 0 50 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage (V) ID, Drain Current (A) Limited By Package 25 100 Fig 8. Maximum Safe Operating Area 400 350 10 VDS, Drain-to-Source Voltage (V) VSD, Source-to-Drain Voltage (V) 32 Id = 5mA 30 28 26 24 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( C ) T C , Case Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 2.0 EAS , Single Pulse Avalanche Energy (mJ) 1200 1.8 ID 44A 83A BOTTOM 195A TOP 1000 1.6 1.4 Energy (J) DC 1 1.0 1.2 1.0 0.8 0.6 0.4 0.2 0.0 800 600 400 200 0 -5 0 5 10 15 20 25 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy www.irf.com 30 25 50 75 100 125 150 175 Starting T J , Junction Temperature (C) Fig 12. Maximum Avalanche Energy vs. DrainCurrent 5 AUIRF1324 Thermal Response ( Z thJC ) C/W 1 D = 0.50 0.20 0.1 0.10 0.05 J 0.02 0.01 0.01 R1 R1 J 1 R2 R2 R3 R3 C 2 1 2 3 3 4 4 Ci= i/Ri Ci i/Ri 1E-005 0.0125 0.000008 0.0822 0.000078 0.2019 0.001110 0.2036 0.007197 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 i (sec) Ri (C/W) R4 R4 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) Avalanche Current (A) Duty Cycle = Single Pulse 0.01 100 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth 6 www.irf.com AUIRF1324 EAR , Avalanche Energy (mJ) 300 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 195A 250 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) 200 150 100 50 0 25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Starting T J , Junction Temperature (C) Fig 15. Maximum Avalanche Energy vs. Temperature VGS(th) , Gate threshold Voltage (V) 4.5 4.0 3.5 3.0 2.5 2.0 ID = 250A ID = 1.0mA ID = 1.0A 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 175 200 T J , Temperature ( C ) Fig 16. Threshold Voltage vs. Temperature www.irf.com 7 AUIRF1324 Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG VGS 20V + V - DD IAS A 0.01 tp I AS Fig 22a. Unclamped Inductive Test Circuit RD VDS Fig 22b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 23a. Switching Time Test Circuit tr t d(off) Fig 23b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V tf .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors 8 Fig 24a. Gate Charge Test Circuit Qgs1 Qgs2 Qgd Qgodr Fig 24b. Gate Charge Waveform www.irf.com AUIRF1324 TO-220AB Package Outline Dimensions are shown in millimeters (inches) TO-220AB Part Marking Information Part Number AUIRF1324 YWWA IR Logo XX or Date Code Y= Year WW= Work Week A= Automotive, Lead Free XX Lot Code Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 9 AUIRF1324 Ordering Information Base part AUIRF1324 10 Package Type TO-220 Standard Pack Form Tube Complete Part Number Quantity 50 AUIRF1324 www.irf.com AUIRF1324 IMPORTANT NOTICE Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without notice. Part numbers designated with the "AU" prefix follow automotive industry and / or customer specific requirements with regards to product discontinuance and process change notification. All products are sold subject to IR's terms and conditions of sale supplied at the time of order acknowledgment. IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IR's standard warranty. Testing and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government requirements, testing of all parameters of each product is not necessarily performed. IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards. Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions. Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such statements. IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that IR was negligent regarding the design or manufacture of the product. IR products are neither designed nor intended for use in military/aerospace applications or environments unless the IR products are specifically designated by IR as military-grade or "enhanced plastic." Only products designated by IR as military-grade meet military specifications. Buyers acknowledge and agree that any such use of IR products which IR has not designated as military-grade is solely at the Buyer's risk, and that they are solely responsible for compliance with all legal and regulatory requirements in connection with such use. IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as compliant with ISO/TS 16949 requirements and bear a part number including the designation "AU". Buyers acknowledge and agree that, if they use any non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements. For technical support, please contact IR's Technical Assistance Center http://www.irf.com/technical-info/ WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245 Tel: (310) 252-7105 www.irf.com 11