STM32L475RGT6 - STMICROELECTRONICS

This is information on a product in full production.

March 2019 DS10969 Rev 5 1/204

STM32L475xx

Ultra-low-power Arm® Cortex®-M4 32-bit MCU+FPU, 100DMIPS,

up to 1MB Flash, 128 KB SRAM, USB OTG FS, analog, audio

Datasheet - production data

Features

•Ultra-low-power with FlexPowerControl

– 1.71 V to 3.6 V power supply

– -40 °C to 85/105/125 °C temperature range

– 300 nA in VBAT mode: supply for RTC and

32x32-bit backup registers

– 30 nA Shutdown mode (5 wakeup pins)

– 120 nA Standby mode (5 wakeup pins)

– 420 nA Standby mode with RTC

– 1.1 µA Stop 2 mode, 1.4 µA with RTC

– 100 µA/MHz run mode

– Batch acquisition mode (BAM)

– 4 µs wakeup from Stop mode

– Brown out reset (BOR)

– Interconnect matrix

•Core: Arm® 32-bit Cortex®-M4 CPU with FPU,

Adaptive real-time accelerator (ART

Accelerator™) allowing 0-wait-state execution

from Flash memory, frequency up to 80 MHz,

MPU, 100DMIPS and DSP instructions

•Performance benchmark

– 1.25 DMIPS/MHz (Drystone 2.1)

– 273.55 CoreMark® (3.42 CoreMark/MHz @

80 MHz)

•Energy benchmark

– 294 ULPMark™ CP score

– 106 ULPMark™ PP score

•Clock Sources

– 4 to 48 MHz crystal oscillator

– 32 kHz crystal oscillator for RTC (LSE)

– Internal 16 MHz factory-trimmed RC (±1%)

– Internal low-power 32 kHz RC (±5%)

– Internal multispeed 100 kHz to 48 MHz

oscillator, auto-trimmed by LSE (better than

±0.25 % accuracy)

– 3 PLLs for system clock, USB, audio, ADC

•Up to 114 fast I/Os, most 5 V-tolerant

•RTC with HW calendar, alarms and calibration

•Up to 21 capacitive sensing channels: support

touchkey, linear and rotary touch sensors

•16x timers: 2x 16-bit advanced motor-control,

2x 32-bit and 5x 16-bit general purpose, 2x 16-

bit basic, 2x low-power 16-bit timers (available

in Stop mode), 2x watchdogs, SysTick timer

•Memories

– Up to 1 MB Flash, 2 banks read-while-

write, proprietary code readout protection

– Up to 128 KB of SRAM including 32 KB

with hardware parity check

– External memory interface for static

memories supporting SRAM, PSRAM and

NOR memories

– Quad SPI memory interface

•4x digital filters for sigma delta modulator

•Rich analog peripherals (independent supply)

– 3x 12-bit ADC 5 Msps, up to 16-bit with

hardware oversampling, 200 µA/Msps

– 2x 12-bit DAC output channels, low-power

sample and hold

– 2x operational amplifiers with built-in PGA

– 2x ultra-low-power comparators

•20x communication interfaces

– USB OTG 2.0 full-speed, LPM and BCD

– 2x SAIs (serial audio interface)

–3x I2C FM+(1 Mbit/s), SMBus/PMBus

– 5x USARTs (ISO 7816, LIN, IrDA, modem)

– 1x LPUART (Stop 2 wake-up)

– 3x SPIs (and 1x Quad SPI)

– CAN (2.0B Active) and SDMMC interface

– SWPMI single wire protocol master I/F

– IRTIM (Infrared interface)

LQFP100 (14 x 14)

LQFP64 (10 x 10)

www.st.com

STM32L475xx

2/204 DS10969 Rev 5

•14-channel DMA controller

•True random number generator

•CRC calculation unit, 96-bit unique ID

•Development support: serial wire debug

(SWD), JTAG, Embedded Trace Macrocell™

•All packages are ECOPACK2® compliant

Table 1. Device summary

Reference Part numbers

STM32L475xx STM32L475RG, STM32L475VG, STM32L475RE, STM32L475VE, STM32L475RC,

STM32L475VC

DS10969 Rev 5 3/204
STM32L475xx Contents
6
Contents
Introduction  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  11
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Functional overview  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
1 Arm® Cortex®-M4 core with FPU  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
2 Adaptive real-time memory accelerator (ART Accelerator™)   . . . . . . . . .  16
3 Memory protection unit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  16
4 Embedded Flash memory   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17
5 Embedded SRAM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
6 Firewall . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  18
7 Boot modes   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
8 Cyclic redundancy check calculation unit (CRC)  . . . . . . . . . . . . . . . . . . .  19
9 Power supply management  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  19
9.1 Power supply schemes  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
9.2 Power supply supervisor  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
9.3 Voltage regulator  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
9.4 Low-power modes  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
9.5 Reset mode  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
9.6 VBAT operation  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
10 Interconnect matrix . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  31
11 Clocks and startup  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  33
12 General-purpose inputs/outputs (GPIOs) . . . . . . . . . . . . . . . . . . . . . . . . .  36
13 Direct memory access controller (DMA) . . . . . . . . . . . . . . . . . . . . . . . . . .  36
14 Interrupts and events  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  37
14.1 Nested vectored interrupt controller (NVIC) . . . . . . . . . . . . . . . . . . . . . . 37
14.2 Extended interrupt/event controller (EXTI)   . . . . . . . . . . . . . . . . . . . . . . 37
15 Analog to digital converter (ADC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  38
15.1 Temperature sensor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 38
15.2 Internal voltage reference (VREFINT)  . . . . . . . . . . . . . . . . . . . . . . . . . . 39
15.3 VBAT battery voltage monitoring  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
16 Digital to analog converter (DAC) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  39

Contents STM32L475xx
4/204 DS10969 Rev 5
17 Voltage reference buffer (VREFBUF) . . . . . . . . . . . . . . . . . . . . . . . . . . . .  40
18 Comparators (COMP)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  41
19 Operational amplifier (OPAMP)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  41
20 Touch sensing controller (TSC)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  41
21 Digital filter for Sigma-Delta Modulators (DFSDM) . . . . . . . . . . . . . . . . . .  42
22 Random number generator (RNG) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  44
23 Timers and watchdogs  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  44
23.1 Advanced-control timer (TIM1, TIM8)   . . . . . . . . . . . . . . . . . . . . . . . . . . 45
23.2 General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM15, TIM16, 
TIM17)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
23.3 Basic timers (TIM6 and TIM7)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46
23.4 Low-power timer (LPTIM1 and LPTIM2)  . . . . . . . . . . . . . . . . . . . . . . . . 46
23.5 Infrared interface (IRTIM)   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
23.6 Independent watchdog (IWDG)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
23.7 System window watchdog (WWDG)   . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
23.8 SysTick timer  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 47
24 Real-time clock (RTC) and backup registers  . . . . . . . . . . . . . . . . . . . . . .  48
25 Inter-integrated circuit interface (I2C)  . . . . . . . . . . . . . . . . . . . . . . . . . . . .  49
26 Universal synchronous/asynchronous receiver transmitter (USART)   . . .  50
27 Low-power universal asynchronous receiver transmitter (LPUART)  . . . .  51
28 Serial peripheral interface (SPI)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  52
29 Serial audio interfaces (SAI) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  52
30 Single wire protocol master interface (SWPMI)  . . . . . . . . . . . . . . . . . . . .  53
31 Controller area network (CAN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  53
32 Secure digital input/output and MultiMediaCards Interface (SDMMC) . . .  54
33 Universal serial bus on-the-go full-speed (OTG_FS)  . . . . . . . . . . . . . . . .  54
34 Flexible static memory controller (FSMC)   . . . . . . . . . . . . . . . . . . . . . . . .  55
35 Quad SPI memory interface (QUADSPI)  . . . . . . . . . . . . . . . . . . . . . . . . .  55
36 Development support  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  57
36.1 Serial wire JTAG debug port (SWJ-DP) . . . . . . . . . . . . . . . . . . . . . . . . . 57
36.2 Embedded Trace Macrocell™  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 57
Pinouts and pin description  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Memory mapping . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80

DS10969 Rev 5 5/204
STM32L475xx Contents
6
Electrical characteristics   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
1 Parameter conditions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  85
1.1 Minimum and maximum values  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
1.2 Typical values   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
1.3 Typical curves   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
1.4 Loading capacitor   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
1.5 Pin input voltage   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
1.6 Power supply scheme  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
1.7 Current consumption measurement   . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
2 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  87
3 Operating conditions   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  90
3.1 General operating conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
3.2 Operating conditions at power-up / power-down  . . . . . . . . . . . . . . . . . . 91
3.3 Embedded reset and power control block characteristics  . . . . . . . . . . . 91
3.4 Embedded voltage reference . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
3.5 Supply current characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 95
3.6 Wakeup time from low-power modes and voltage scaling 
transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114
3.7 External clock source characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 116
3.8 Internal clock source characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . 121
3.9 PLL characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
3.10 Flash memory characteristics   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
3.11 EMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
3.12 Electrical sensitivity characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
3.13 I/O current injection characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
3.14 I/O port characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
3.15 NRST pin characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
3.16 Extended interrupt and event controller input (EXTI) characteristics . . 139
3.17 Analog switches booster  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
3.18 Analog-to-Digital converter characteristics   . . . . . . . . . . . . . . . . . . . . . 140
3.19 Digital-to-Analog converter characteristics   . . . . . . . . . . . . . . . . . . . . . 153
3.20 Voltage reference buffer characteristics   . . . . . . . . . . . . . . . . . . . . . . . 158
3.21 Comparator characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
3.22 Operational amplifiers characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . 161
3.23 Temperature sensor characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
3.24 VBAT monitoring characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
3.25 DFSDM characteristics   . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166

Contents STM32L475xx

6/204 DS10969 Rev 5

6.3.26 Timer characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 167

6.3.27 Communication interfaces characteristics . . . . . . . . . . . . . . . . . . . . . . 169

6.3.28 FSMC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 182

6.3.29 SWPMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190

7 Package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191

7.1 LQFP100 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 191

7.2 LQFP64 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195

7.3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198

7.3.1 Reference document . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198

7.3.2 Selecting the product temperature range . . . . . . . . . . . . . . . . . . . . . . 198

8 Ordering information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201

9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202

DS10969 Rev 5 7/204
STM32L475xx List of tables
9
List of tables
Table 1. Device summary . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Table 2. STM32L475xx family device features and peripheral counts . . . . . . . . . . . . . . . . . . . . . . . 13
Table 3. Access status versus readout protection level and execution modes. . . . . . . . . . . . . . . . . 17
Table 4. STM32L475xx modes overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Table 5. Functionalities depending on the working mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Table 6. STM32L475xx peripherals interconnect matrix  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 31
Table 7. DMA implementation  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Table 8. Temperature sensor calibration values. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 9. Internal voltage reference calibration values  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39
Table 10. DFSDM1 implementation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 11. Timer feature comparison . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44
Table 12. I2C implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 49
Table 13. STM32L475xx USART/UART/LPUART features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50
Table 14. SAI implementation. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53
Table 15. Legend/abbreviations used in the pinout table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Table 16. STM32L475xx pin definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60
Table 17. Alternate function AF0 to AF7. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 69
Table 18. Alternate function AF8 to AF15. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75
Table 19. STM32L475xx memory map and peripheral register boundary addresses  . . . . . . . . . . . . 81
Table 20. Voltage characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Table 21. Current characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 88
Table 22. Thermal characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 89
Table 23. General operating conditions  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90
Table 24. Operating conditions at power-up / power-down  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 25. Embedded reset and power control block characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 91
Table 26. Embedded internal voltage reference. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 93
Table 27. Current consumption in Run and Low-power run modes, code with data processing  
running from Flash, ART enable (Cache ON Prefetch OFF)  . . . . . . . . . . . . . . . . . . . . . . . 96
Table 28. Current consumption in Run and Low-power run modes, code with data processing 
running from Flash, ART disable  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 97
Table 29. Current consumption in Run and Low-power run modes, code with data processing  
running from SRAM1  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 98
Table 30. Typical current consumption in Run and Low-power run modes, with different codes 
running from Flash, ART enable (Cache ON Prefetch OFF)  . . . . . . . . . . . . . . . . . . . . . . . 99
Table 31. Typical current consumption in Run and Low-power run modes, with different codes 
running from Flash, ART disable  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 99
Table 32. Typical current consumption in Run and Low-power run modes, with different codes 
running from SRAM1  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100
Table 33. Current consumption in Sleep and Low-power sleep modes, Flash ON  . . . . . . . . . . . . . 101
Table 34. Current consumption in Low-power sleep modes, Flash in power-down . . . . . . . . . . . . . 102
Table 35. Current consumption in Stop 2 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 102
Table 36. Current consumption in Stop 1 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 103
Table 37. Current consumption in Stop 0 mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 105
Table 38. Current consumption in Standby mode  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 106
Table 39. Current consumption in Shutdown mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107
Table 40. Current consumption in VBAT mode  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 109
Table 41. Peripheral current consumption  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 111
Table 42. Low-power mode wakeup timings  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 114

List of tables STM32L475xx
8/204 DS10969 Rev 5
Table 43. Regulator modes transition times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 44. Wakeup time using USART/LPUART. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 45. High-speed external user clock characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 116
Table 46. Low-speed external user clock characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Table 47. HSE oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 118
Table 48. LSE oscillator characteristics (fLSE = 32.768 kHz) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Table 49. HSI16 oscillator characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 121
Table 50. MSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .123
Table 51. LSI oscillator characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Table 52. PLL, PLLSAI1, PLLSAI2 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 53. Flash memory characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 127
Table 54. Flash memory endurance and data retention . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 128
Table 55. EMS characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 129
Table 56. EMI characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 57. ESD absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130
Table 58. Electrical sensitivities  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 59. I/O current injection susceptibility . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 131
Table 60. I/O static characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 132
Table 61. Output voltage characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 135
Table 62. I/O AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 136
Table 63. NRST pin characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Table 64. EXTI input characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 65. Analog switches booster characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Table 66. ADC characteristics    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 140
Table 67. Maximum ADC RAIN  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 142
Table 68. ADC accuracy - limited test conditions 1  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 144
Table 69. ADC accuracy - limited test conditions 2  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 146
Table 70. ADC accuracy - limited test conditions 3  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 148
Table 71. ADC accuracy - limited test conditions 4  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150
Table 72. DAC characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 153
Table 73. DAC accuracy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 156
Table 74. VREFBUF characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 158
Table 75. COMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160
Table 76. OPAMP characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 161
Table 77. TS characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 78. VBAT monitoring characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 79. VBAT charging characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165
Table 80. DFSDM characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 166
Table 81. TIMx characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 82. IWDG min/max timeout period at 32 kHz (LSI). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 83. WWDG min/max timeout value at 80 MHz (PCLK). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 168
Table 84. I2C analog filter characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 169
Table 85. SPI characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 170
Table 86. Quad SPI characteristics in SDR mode  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 173
Table 87. QUADSPI characteristics in DDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Table 88. SAI characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175
Table 89. SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V . . . . . . . . . . . . . . . . . . . . . . . . . 177
Table 90. eMMC dynamic characteristics, VDD = 1.71 V to 1.9 V . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Table 91. USB OTG DC electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Table 92. USB OTG electrical characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Table 93. USB BCD DC electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180
Table 94. Asynchronous multiplexed PSRAM/NOR read timings. . . . . . . . . . . . . . . . . . . . . . . . . . . 184

DS10969 Rev 5 9/204

STM32L475xx List of tables

Table 95. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings . . . . . . . . . . . . . . . . . . . . 184

Table 96. Asynchronous multiplexed PSRAM/NOR write timings . . . . . . . . . . . . . . . . . . . . . . . . . . 186

Table 97. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings . . . . . . . . . . . . . . . . . . . . 186

Table 98. Synchronous multiplexed NOR/PSRAM read timings . . . . . . . . . . . . . . . . . . . . . . . . . . . 188

Table 99. Synchronous multiplexed PSRAM write timings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190

Table 100. SWPMI electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 190

Table 101. LQFP - 100 pins, 14 x 14 mm low-profile quad flat package

mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 192

Table 102. LQFP - 64 pins, 10 x 10 mm low-profile quad flat

package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 195

Table 103. Package thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 198

Table 104. STM32L475xx ordering information scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 201

Table 105. Document revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 202

List of figures STM32L475xx
10/204 DS10969 Rev 5
List of figures
Figure 1. STM32L475xx block diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Figure 2. Power supply overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 3. Power-up/down sequence  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 4. Clock tree . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35
Figure 5. Voltage reference buffer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40
Figure 6. STM32L475Vx LQFP100 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 58
Figure 7. STM32L475Rx LQFP64 pinout(1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 59
Figure 8. STM32L475xx memory map. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80
Figure 9. Pin loading conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 10. Pin input voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 85
Figure 11. Power supply scheme. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 86
Figure 12. Current consumption measurement scheme . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 87
Figure 13. VREFINT versus temperature  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 94
Figure 14. High-speed external clock source AC timing diagram  . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Figure 15. Low-speed external clock source AC timing diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . 117
Figure 16. Typical application with an 8 MHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 119
Figure 17. Typical application with a 32.768 kHz crystal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120
Figure 18. HSI16 frequency versus temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 122
Figure 19. Typical current consumption versus MSI frequency . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 126
Figure 20. I/O input characteristics  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 134
Figure 21. I/O AC characteristics definition(1)  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 138
Figure 22. Recommended NRST pin protection  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 139
Figure 23. ADC accuracy characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 24. Typical connection diagram using the ADC  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152
Figure 25. 12-bit buffered / non-buffered DAC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 155
Figure 26. SPI timing diagram - slave mode and CPHA = 0 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 171
Figure 27. SPI timing diagram - slave mode and CPHA = 1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 28. SPI timing diagram - master mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 172
Figure 29. Quad SPI timing diagram - SDR mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 30. Quad SPI timing diagram - DDR mode. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174
Figure 31. SAI master timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 176
Figure 32. SAI slave timing waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 177
Figure 33. SDIO high-speed mode  . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 178
Figure 34. SD default mode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 179
Figure 35. USB OTG timings – definition of data signal rise and fall time . . . . . . . . . . . . . . . . . . . . . 180
Figure 36. Asynchronous multiplexed PSRAM/NOR read waveforms. . . . . . . . . . . . . . . . . . . . . . . . 183
Figure 37. Asynchronous multiplexed PSRAM/NOR write waveforms  . . . . . . . . . . . . . . . . . . . . . . . 185
Figure 38. Synchronous multiplexed NOR/PSRAM read timings  . . . . . . . . . . . . . . . . . . . . . . . . . . . 187
Figure 39. Synchronous multiplexed PSRAM write timings. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 189
Figure 40. LQFP - 100 pins, 14 x 14 mm low-profile quad flat package outline. . . . . . . . . . . . . . . . . 191
Figure 41. LQFP - 100 pins, 14 x 14 mm low-profile quad flat  
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 193
Figure 42. LQFP100 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 194
Figure 43. LQFP - 64 pins, 10 x 10 mm low-profile quad flat package outline. . . . . . . . . . . . . . . . . . 195
Figure 44. LQFP - 64 pins, 10 x 10 mm low-profile quad flat package  
recommended footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 196
Figure 45. LQFP64 marking (package top view) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 197
Figure 46. LQFP64 PD max vs. TA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200

DS10969 Rev 5 11/204

STM32L475xx Introduction

1 Introduction

This datasheet provides the ordering information and mechanical device characteristics of

the STM32L475xx microcontrollers.

This document should be read in conjunction with the STM32L4x5 reference manual

(RM0351). The reference manual is available from the STMicroelectronics website

www.st.com.

For information on the Arm®(a) Cortex®-M4 core, please refer to the Cortex®-M4 Technical

Reference Manual, available from the www.arm.com website.

a. Arm is a registered trademark of Arm Limited (or its subsidiaries) in the US and/or elsewhere.

Description STM32L475xx

12/204 DS10969 Rev 5

2 Description

The STM32L475xx devices are the ultra-low-power microcontrollers based on the high-

performance Arm® Cortex®-M4 32-bit RISC core operating at a frequency of up to 80 MHz.

The Cortex-M4 core features a Floating point unit (FPU) single precision which supports all

Arm® single-precision data-processing instructions and data types. It also implements a full

set of DSP instructions and a memory protection unit (MPU) which enhances application

security.

The STM32L475xx devices embed high-speed memories (Flash memory up to 1 Mbyte, up

to 128 Kbyte of SRAM), a flexible external memory controller (FSMC) for static memories

(for devices with 100 pins package), a Quad SPI flash memories interface (available on all

packages) and an extensive range of enhanced I/Os and peripherals connected to two APB

buses, two AHB buses and a 32-bit multi-AHB bus matrix.

The STM32L475xx devices embed several protection mechanisms for embedded Flash

memory and SRAM: readout protection, write protection, proprietary code readout

protection and Firewall.

The devices offer up to three fast 12-bit ADCs (5 Msps), two comparators, two operational

amplifiers, two DAC channels, an internal voltage reference buffer, a low-power RTC, two

general-purpose 32-bit timer, two 16-bit PWM timers dedicated to motor control, seven

general-purpose 16-bit timers, and two 16-bit low-power timers. The devices support four

digital filters for external sigma delta modulators (DFSDM).

In addition, up to 21 capacitive sensing channels are available.

They also feature standard and advanced communication interfaces.

•Three I2Cs

•Three SPIs

•Three USARTs, two UARTs and one Low-Power UART.

•Two SAIs (Serial Audio Interfaces)

•One SDMMC

•One CAN

•One USB OTG full-speed

•One SWPMI (Single Wire Protocol Master Interface)

The STM32L475xx operates in the -40 to +85 °C (+105 °C junction), -40 to +105 °C

(+125 °C junction) and -40 to +125 °C (+130 °C junction) temperature ranges from a 1.71 to

3.6 V power supply. A comprehensive set of power-saving modes allows the design of low-

power applications.

Some independent power supplies are supported: analog independent supply input for

ADC, DAC, OPAMPs and comparators, 3.3 V dedicated supply input for USB and up to 14

I/Os can be supplied independently down to 1.08V. A VBAT input allows to backup the RTC

and backup registers.

The STM32L475xx family offers two packages from 64-pin to 100-pin packages.

DS10969 Rev 5 13/204

STM32L475xx Description

Table 2. STM32L475xx family device features and peripheral counts

Peripheral STM32L475Vx STM32L475Rx

Flash memory 256KB 512KB 1MB 256KB 512KB 1MB

SRAM 128 KB

External memory controller for

static memories Yes(1) No

Quad SPI Yes

Timers

Advanced control 2 (16-bit)

General purpose 5 (16-bit)

2 (32-bit)

Basic 2 (16-bit)

Low -power 2 (16-bit)

SysTick timer 1

Watchdog timers

(independent,

window)

Comm.

interfaces

SPI 3

I2C3

USART

UART

LPUART

SAI 2

CAN 1

USB OTG FS Yes

SDMMC Yes

SWPMI Yes

Digital filters for sigma-delta

modulators Yes (4 filters)

Number of channels 8

RTC Yes

Tamper pins 3 2

Random generator Yes

GPIOs

Wakeup pins

Nb of I/Os down to 1.08 V

Capacitive sensing

Number of channels 21 12

12-bit ADCs

Number of channels

12-bit DAC channels 2

Description STM32L475xx

14/204 DS10969 Rev 5

Internal voltage reference buffer Yes No

Analog comparator 2

Operational amplifiers 2

Max. CPU frequency 80 MHz

Operating voltage 1.71 to 3.6 V

Operating temperature

Ambient operating temperature:

-40 to 85 °C / -40 to 105 °C / -40 to 125 °C

Junction temperature:

-40 to 105 °C / -40 to 125 °C / -40 to 130 °C

Packages LQFP100 LQFP64

1. For the LQFP100 package, only FMC Bank1 is available. Bank1 can only support a multiplexed

NOR/PSRAM memory using the NE1 Chip Select.

Table 2. STM32L475xx family device features and peripheral counts (continued)

Peripheral STM32L475Vx STM32L475Rx

DS10969 Rev 5 15/204

STM32L475xx Description

Figure 1. STM32L475xx block diagram

Note: AF: alternate function on I/O pins.

MSv37693V3

Flash

up to

1 MB

GPIO PORT A

AHB/APB2

EXT IT. WKUP

114 AF

PA[15:0]

TIM1 / PWM

3 compl. channels (TIM1_CH[1:3]N),

4 channels (TIM1_CH[1:4]),

ETR, BKIN, BKIN2 as AF

USART1

RX, TX, CK,CTS,

RTS as AF

SPI1

MOSI, MISO,

SCK, NSS as AF

APB260 M Hz

APB1 30MHz

OUT1

ITF

WWDG

RTC_TS

OSC32_IN

OSC32_OUT

smcard

IrDA

16b

SDIO / MMC

D[7:0]

CMD, CK as AF

VBAT = 1.55 to 3.6 V

JTAG & SW

ARM Cortex-M4

80 MHz

FPU

NVIC

ETM

MPU

DMA2

ART

ACCEL/

CACHE

FIFO

@ VDDA

BOR

Supply

supervision

PVD, PVM

Int

reset

XTAL 32 kHz

MAN AGT

RTC

FCLK

Standby

interface

IWDG

@VBAT

@ VDD

@VDD

AWU

Reset & clock

control

PCLKx

Voltage

regulator

3.3 to 1.2 V

VDD Power management

@ VDD

RTC_TAMPx

Backup register

AHB bus-matrix

TIM15

2 channels,

1 compl. channel, BKIN as AF

DAC1

DAC2

TIM6

TIM7

D-BUS

APB1 80 MHz (max)

SRAM 96 KB

SRAM 32 KB

I-BUS

S-BUS

DMA1

PB[15:0]

PC[15:0]

PD[15:0]

PE[15:0]

PH[1:0]

GPIO PORT B

GPIO PORT C

GPIO PORT D

GPIO PORT E

GPIO PORT H

TIM8 / PWM 16b

16b

TIM16 16b

TIM17 16b

3 compl. channels (TIM1_CH[1:3]N),

4 channels (TIM1_CH[1:4]),

ETR, BKIN, BKIN2 as AF

1 channel,

1 compl. channel, BKIN as AF

1 channel,

1 compl. channel, BKIN as AF

OUT2

16b

AHB/APB1

OSC_IN

OSC_OUT

HCLKx

XTAL OSC

4- 16MHz

16 analog inputs

common

to the 2 ADCs

VREF+

USAR T 2MBps

Temperature sensor

@ VDDA

SAI1

MCLK_A, SD_A, FS_A, SCK_A, EXTCLK

MCLK_B, SD_B, FS_B, SCK_B as AF

SAI2

MCLK_A, SD_A, FS_A, SCK_A, EXTCLK

MCLK_B, SD_B, FS_B, SCK_B as AF

DFSDM

SDCKIN[7:0], SDDATIN[7:0],

SDCKOUT,SDTRIG as AF

Touch sensing controller

7 Groups of

3 channels max as AF RC HSI

RC LSI

PLL 1&2&3

MSI

COMP1

INP, INM, OUT

COMP2

INP, INM, OUT

@ VDDA

RTC_OUT

AHB1 80 MHz

CRC

APB2 80MHz

AHB2 80 MHz

Firewall

VREF Buffer

@ VDDA

@ VDD

VDD = 1.71 to 3.6 V

VSS

VDDA, VSSA

VDD, VSS, NRST

VDDUSB

TRACECLK

TRACED[3:0]

NJTRST, JTDI,

JTCK/SWCLK

JTDO/SWD, JTDO

TIM2 32b 4 channels, ETR as AF

TIM3 16b 4 channels, ETR as AF

TIM4 16b 4 channels, ETR as AF

TIM5 32b 4 channels

USART2 RX, TX, CK, CTS, RTS as AF

smcard

IrDA

USART3 RX, TX, CK, CTS, RTS as AF

smcard

IrDA

RX, TX, CTS, RTS as AF

UART4

RX, TX, CTS, RTS as AF

UART5

MOSI, MISO, SCK, NSS as AF

SP2

MOSI, MISO, SCK, NSS as AF

SP3

I2C1/SMBUS SCL, SDA, SMBA as AF

SCL, SDA, SMBA as AF

I2C2/SMBUS

SCL, SDA, SMBA as AF

I2C3/SMBUS

FIFO

TX, RX as AF

bxCAN1

VOUT, VINM, VINP

OpAmp1

OpAmp2

@VDDA

VOUT, VINM, VINP

LPUART1 RX, TX, CTS, RTS as AF

SWPMI1 IO

RX, TX, SUSPEND as AF

LPTIM1 IN1, IN2, OUT, ETR as AF

LPTIM2 IN1, OUT, ETR as AF

RNG

Flexible static memory controller (FSMC):

SRAM, PSRAM, NOR Flash,

NAND Flash

CLK, NE1, NL, NBL[1:0],

A[23:16], D[15:0], NOE, NWE,

NWAIT as AF

Quad SPI memory interface

BK1_IO[3:0]

CLK

NCS

ITF

ADC2

ADC1

Functional overview STM32L475xx

16/204 DS10969 Rev 5

3 Functional overview

3.1 Arm® Cortex®-M4 core with FPU

The Arm® Cortex®-M4 with FPU processor is the latest generation of Arm® processors for

embedded systems. It was developed to provide a low-cost platform that meets the needs of

MCU implementation, with a reduced pin count and low-power consumption, while

delivering outstanding computational performance and an advanced response to interrupts.

The Arm® Cortex®-M4 with FPU 32-bit RISC processor features exceptional code-

efficiency, delivering the high-performance expected from an Arm® core in the memory size

usually associated with 8- and 16-bit devices.

The processor supports a set of DSP instructions which allow efficient signal processing and

complex algorithm execution.

Its single precision FPU speeds up software development by using metalanguage

development tools, while avoiding saturation.

With its embedded Arm® core, the STM32L475xx family is compatible with all Arm® tools

and software.

Figure 1 shows the general block diagram of the STM32L475xx family devices.

3.2 Adaptive real-time memory accelerator (ART Accelerator™)

The ART Accelerator™ is a memory accelerator which is optimized for STM32 industry-

standard Arm® Cortex®-M4 processors. It balances the inherent performance advantage of

the Arm® Cortex®-M4 over Flash memory technologies, which normally requires the

processor to wait for the Flash memory at higher frequencies.

To release the processor near 100 DMIPS performance at 80MHz, the accelerator

implements an instruction prefetch queue and branch cache, which increases program

execution speed from the 64-bit Flash memory. Based on CoreMark benchmark, the

performance achieved thanks to the ART accelerator is equivalent to 0 wait state program

execution from Flash memory at a CPU frequency up to 80 MHz.

3.3 Memory protection unit

The memory protection unit (MPU) is used to manage the CPU accesses to memory to

prevent one task to accidentally corrupt the memory or resources used by any other active

task. This memory area is organized into up to 8 protected areas that can in turn be divided

up into 8 subareas. The protection area sizes are between 32 bytes and the whole 4

gigabytes of addressable memory.

The MPU is especially helpful for applications where some critical or certified code has to be

protected against the misbehavior of other tasks. It is usually managed by an RTOS (real-

time operating system). If a program accesses a memory location that is prohibited by the

MPU, the RTOS can detect it and take action. In an RTOS environment, the kernel can

dynamically update the MPU area setting, based on the process to be executed.

The MPU is optional and can be bypassed for applications that do not need it.

DS10969 Rev 5 17/204

STM32L475xx Functional overview

3.4 Embedded Flash memory

STM32L475xx devices feature up to 1 Mbyte of embedded Flash memory available for

storing programs and data. The Flash memory is divided into two banks allowing read-

while-write operations. This feature allows to perform a read operation from one bank while

an erase or program operation is performed to the other bank. The dual bank boot is also

supported. Each bank contains 256 pages of 2 Kbyte.

Flexible protections can be configured thanks to option bytes:

•Readout protection (RDP) to protect the whole memory. Three levels are available:

– Level 0: no readout protection

– Level 1: memory readout protection: the Flash memory cannot be read from or

written to if either debug features are connected, boot in RAM or bootloader is

selected

– Level 2: chip readout protection: debug features (Cortex-M4 JTAG and serial

wire), boot in RAM and bootloader selection are disabled (JTAG fuse). This

selection is irreversible.

•Write protection (WRP): the protected area is protected against erasing and

programming. Two areas per bank can be selected, with 2-Kbyte granularity.

•Proprietary code readout protection (PCROP): a part of the flash memory can be

protected against read and write from third parties. The protected area is execute-only:

it can only be reached by the STM32 CPU, as an instruction code, while all other

accesses (DMA, debug and CPU data read, write and erase) are strictly prohibited.

One area per bank can be selected, with 64-bit granularity. An additional option bit

(PCROP_RDP) allows to select if the PCROP area is erased or not when the RDP

protection is changed from Level 1 to Level 0.

Table 3. Access status versus readout protection level and execution modes

Area Protection

level

User execution Debug, boot from RAM or boot

from system memory (loader)

Read Write Erase Read Write Erase

Main

memory

1 Yes Yes Yes No No No

2 Yes Yes Yes N/A N/A N/A

System

memory

1 Yes No No Yes No No

2 Yes No No N/A N/A N/A

Option

bytes

1 Yes Yes Yes Yes Yes Yes

2 Yes No No N/A N/A N/A

Backup

registers

1YesYesN/A

(1)

1. Erased when RDP change from Level 1 to Level 0.

No No N/A(1)

2 Yes Yes N/A N/A N/A N/A

SRAM2

1 Yes Yes Yes(1) No No No(1)

2 Yes Yes Yes N/A N/A N/A

Functional overview STM32L475xx

18/204 DS10969 Rev 5

The whole non-volatile memory embeds the error correction code (ECC) feature supporting:

•single error detection and correction

•double error detection.

•The address of the ECC fail can be read in the ECC register

3.5 Embedded SRAM

STM32L475xx devices feature up to 128 Kbyte of embedded SRAM. This SRAM is split into

two blocks:

•96 Kbyte mapped at address 0x2000 0000 (SRAM1)

•32 Kbyte located at address 0x1000 0000 with hardware parity check (SRAM2).

This block is accessed through the ICode/DCode buses for maximum performance.

These 32 Kbyte SRAM can also be retained in Standby mode.

The SRAM2 can be write-protected with 1 Kbyte granularity.

The memory can be accessed in read/write at CPU clock speed with 0 wait states.

3.6 Firewall

The device embeds a Firewall which protects code sensitive and secure data from any

access performed by a code executed outside of the protected areas.

Each illegal access generates a reset which kills immediately the detected intrusion.

The Firewall main features are the following:

•Three segments can be protected and defined thanks to the Firewall registers:

– Code segment (located in Flash or SRAM1 if defined as executable protected

area)

– Non-volatile data segment (located in Flash)

– Volatile data segment (located in SRAM1)

•The start address and the length of each segments are configurable:

– Code segment: up to 1024 Kbyte with granularity of 256 bytes

– Non-volatile data segment: up to 1024 Kbyte with granularity of 256 bytes

– Volatile data segment: up to 96 Kbyte with a granularity of 64 bytes

•Specific mechanism implemented to open the Firewall to get access to the protected

areas (call gate entry sequence)

•Volatile data segment can be shared or not with the non-protected code

•Volatile data segment can be executed or not depending on the Firewall configuration

The Flash readout protection must be set to level 2 in order to reach the expected level of

protection.

DS10969 Rev 5 19/204

STM32L475xx Functional overview

3.7 Boot modes

At startup, BOOT0 pin and BOOT1 option bit are used to select one of three boot options:

•Boot from user Flash

•Boot from system memory

•Boot from embedded SRAM

The boot loader is located in system memory. It is used to reprogram the Flash memory by

using USART, I2C, SPI, CAN or USB OTG FS in Device mode through DFU (device

firmware upgrade).

3.8 Cyclic redundancy check calculation unit (CRC)

The CRC (cyclic redundancy check) calculation unit is used to get a CRC code using a

configurable generator polynomial value and size.

Among other applications, CRC-based techniques are used to verify data transmission or

storage integrity. In the scope of the EN/IEC 60335-1 standard, they offer a means of

verifying the Flash memory integrity. The CRC calculation unit helps compute a signature of

the software during runtime, to be compared with a reference signature generated at link-

time and stored at a given memory location.

3.9 Power supply management

3.9.1 Power supply schemes

•VDD = 1.71 to 3.6 V: external power supply for I/Os (VDDIO1), the internal regulator and

the system analog such as reset, power management and internal clocks. It is provided

externally through VDD pins.

•VDDA = 1.62 V (ADCs/COMPs) / 1.8 (DAC/OPAMPs) to 3.6 V: external analog power

supply for ADCs, DAC, OPAMPs, Comparators and Voltage reference buffer. The VDDA

voltage level is independent from the VDD voltage.

•VDDUSB = 3.0 to 3.6 V: external independent power supply for USB transceivers. The

VDDUSB voltage level is independent from the VDD voltage.

•VBAT = 1.55 to 3.6 V: power supply for RTC, external clock 32 kHz oscillator and

backup registers (through power switch) when VDD is not present.

Note: When the functions supplied by VDDA or VDDUSB are not used, these supplies should

preferably be shorted to VDD.

Note: If these supplies are tied to ground, the I/Os supplied by these power supplies are not 5 V

tolerant (refer to Table 20: Voltage characteristics).

Note: VDDIOx is the I/Os general purpose digital functions supply. VDDIOx represents VDDIO1, with

VDDIO1 = VDD.

Functional overview STM32L475xx

20/204 DS10969 Rev 5

Figure 2. Power supply overview

During power-up and power-down phases, the following power sequence requirements

must be respected:

•When VDD is below 1 V, other power supplies (VDDA, VDDUSB) must remain below VDD

+ 300 mV.

•When VDD is above 1 V, all power supplies are independent.

During the power-down phase, VDD can temporarily become lower than other supplies only

if the energy provided to the MCU remains below 1 mJ; this allows external decoupling

capacitors to be discharged with different time constants during the power-down transient

phase.

MSv37694V3

Backup domain

Standby circuitry

(Wakeup logic,

IWDG)

Voltage regulator

Core

SRAM1

SRAM2

Digital

peripherals

Low voltage detector

LSE crystal 32 K osc

BKP registers

RCC BDCR register

RTC

I/O ring

VCORE domain

Temp. sensor

Reset block

2 x PLL, HSI, MSI,

HSI48

Flash memory

VDDIO1

VDD domain

VCORE

VSS

VDD

VBAT

VDDA domain

2 x D/A converters

1 x A/D converters

2 x comparators

1 x operational amplifier

Voltage reference buffer

USB transceivers

VDDUSB

VDDA

VSSA

VSS

DS10969 Rev 5 21/204

STM32L475xx Functional overview

Figure 3. Power-up/down sequence

1. VDDX refers to any power supply among VDDA, VDDUSB.

3.9.2 Power supply supervisor

The device has an integrated ultra-low-power brown-out reset (BOR) active in all modes

except Shutdown and ensuring proper operation after power-on and during power down.

The device remains in reset mode when the monitored supply voltage VDD is below a

specified threshold, without the need for an external reset circuit.

The lowest BOR level is 1.71V at power on, and other higher thresholds can be selected

through option bytes.The device features an embedded programmable voltage detector

(PVD) that monitors the VDD power supply and compares it to the VPVD threshold. An

interrupt can be generated when VDD drops below the VPVD threshold and/or when VDD is

higher than the VPVD threshold. The interrupt service routine can then generate a warning

message and/or put the MCU into a safe state. The PVD is enabled by software.

In addition, the device embeds a Peripheral Voltage Monitor which compares the

independent supply voltages VDDA, VDDUSB with a fixed threshold in order to ensure that the

peripheral is in its functional supply range.

MSv47490V1

0.3

VBOR0

3.6

Operating modePower-on Power-down time

VDDX

(1)

VDD

Invalid supply area VDDX < VDD + 300 mV VDDX independent from VDD

Functional overview STM32L475xx

22/204 DS10969 Rev 5

3.9.3 Voltage regulator

Two embedded linear voltage regulators supply most of the digital circuitries: the main

regulator (MR) and the low-power regulator (LPR).

•The MR is used in the Run and Sleep modes and in the Stop 0 mode.

•The LPR is used in Low-Power Run, Low-Power Sleep, Stop 1 and Stop 2 modes. It is

also used to supply the 32 Kbyte SRAM2 in Standby with SRAM2 retention.

•Both regulators are in power-down in Standby and Shutdown modes: the regulator

output is in high impedance, and the kernel circuitry is powered down thus inducing

zero consumption.

The ultralow-power STM32L475xx supports dynamic voltage scaling to optimize its power

consumption in run mode. The voltage from the Main Regulator that supplies the logic

(VCORE) can be adjusted according to the system’s maximum operating frequency.

There are two power consumption ranges:

•Range 1 with the CPU running at up to 80 MHz.

•Range 2 with a maximum CPU frequency of 26 MHz. All peripheral clocks are also

limited to 26 MHz.

The VCORE can be supplied by the low-power regulator, the main regulator being switched

off. The system is then in Low-power run mode.

•Low-power run mode with the CPU running at up to 2 MHz. Peripherals with

independent clock can be clocked by HSI16.

3.9.4 Low-power modes

The ultra-low-power STM32L475xx supports seven low-power modes to achieve the best

compromise between low-power consumption, short startup time, available peripherals and

available wakeup sources.

STM32L475xx Functional overview

DS10969 Rev 5 23/204

Table 4. STM32L475xx modes overview

Mode Regulator

(1) CPU Flash SRAM Clocks DMA & Peripherals(2) Wakeup source Consumption(3) Wakeup time

Run

Range 1

Yes ON(4) ON Any

All

N/A

112 µA/MHz

N/A

Range2 All except OTG_FS, RNG 100 µA/MHz

LPRun LPR Yes ON(4) ON

Any

except

PLL

All except OTG_FS, RNG N/A 136 µA/MHz to Range 1: 4 µs

to Range 2: 64 µs

Sleep

Range 1

No ON(4) ON(5) Any

All Any interrupt or

event

37 µA/MHz 6 cycles

Range 2 All except OTG_FS, RNG 35 µA/MHz 6 cycles

LPSleep LPR No ON(4) ON(5)

Any

except

PLL

All except OTG_FS, RNG Any interrupt or

event 40 µA/MHz 6 cycles

Stop 0

Range 1

No Off ON LSE

LSI

BOR, PVD, PVM

RTC, IWDG

COMPx (x=1,2)

DAC1

OPAMPx (x=1,2)

USARTx (x=1...5)(6)

LPUART1(6)

I2Cx (x=1...3)(7)

LPTIMx (x=1,2)

***

All other peripherals are

frozen.

Reset pin, all I/Os

BOR, PVD, PVM

RTC, IWDG

COMPx (x=1..2)

USARTx (x=1...5)(6)

LPUART1(6)

I2Cx (x=1...3)(7)

LPTIMx (x=1,2)

OTG_FS(8)

SWPMI1(9)

108 µA 0.7 µs in SRAM

4.5 µs in Flash

Range 2

Functional overview STM32L475xx

24/204 DS10969 Rev 5

Stop 1 LPR No Off ON LSE

LSI

BOR, PVD, PVM

RTC, IWDG

COMPx (x=1,2)

DAC1

OPAMPx (x=1,2)

USARTx (x=1...5)(6)

LPUART1(6)

I2Cx (x=1...3)(7)

LPTIMx (x=1,2)

***

All other peripherals are

frozen.

Reset pin, all I/Os

BOR, PVD, PVM

RTC, IWDG

COMPx (x=1..2)

USARTx (x=1...5)(6)

LPUART1(6)

I2Cx (x=1...3)(7)

LPTIMx (x=1,2)

OTG_FS(8)

SWPMI1(9)

6.6 µA w/o RTC

6.9 µA w RTC

4 µs in SRAM

6 µs in Flash

Stop 2 LPR No Off ON LSE

LSI

BOR, PVD, PVM

RTC, IWDG

COMPx (x=1..2)

I2C3(7)

LPUART1(6)

LPTIM1

***

All other peripherals are

frozen.

Reset pin, all I/Os

BOR, PVD, PVM

RTC, IWDG

COMPx (x=1..2)

I2C3(7)

LPUART1(6)

LPTIM1

1.1 µA w/o RTC

1.4 µA w/RTC

5 µs in SRAM

7 µs in Flash

Table 4. STM32L475xx modes overview (continued)

Mode Regulator

(1) CPU Flash SRAM Clocks DMA & Peripherals(2) Wakeup source Consumption(3) Wakeup time

STM32L475xx Functional overview

DS10969 Rev 5 25/204

Standby

LPR

Powered

Off Off

SRAM2

LSE

LSI

BOR, RTC, IWDG

***

All other peripherals are

powered off.

***

I/O configuration can be

floating, pull-up or pull-down

Reset pin

5 I/Os (WKUPx)(10)

BOR, RTC, IWDG

0.35 µA w/o RTC

0.65 µA w/ RTC

14 µs

OFF Powered

Off

0.12 µA w/o RTC

0.42 µA w/ RTC

Shutdown OFF Powered

Off Off Powered

Off LSE

RTC

***

All other peripherals are

powered off.

***

I/O configuration can be

floating, pull-up or pull-down(11)

Reset pin

5 I/Os (WKUPx)(10)

RTC

0.03 µA w/o RTC

0.33 µA w/ RTC 256 µs

1. LPR means Main regulator is OFF and Low-power regulator is ON.

2. All peripherals can be active or clock gated to save power consumption.

3. Typical current at VDD = 1.8 V, 25°C. Consumptions values provided running from SRAM, Flash memory Off, 80 MHz in Range 1, 26 MHz in Range 2, 2 MHz in

LPRun/LPSleep.

4. The Flash memory can be put in power-down and its clock can be gated off when executing from SRAM.

5. The SRAM1 and SRAM2 clocks can be gated on or off independently.

6. U(S)ART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or received frame event.

7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.

8. OTG_FS wakeup by resume from suspend and attach detection protocol event.

9. SWPMI1 wakeup by resume from suspend.

10. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.

11. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when exiting the Shutdown mode.

Table 4. STM32L475xx modes overview (continued)

Mode Regulator

(1) CPU Flash SRAM Clocks DMA & Peripherals(2) Wakeup source Consumption(3) Wakeup time

Functional overview STM32L475xx

26/204 DS10969 Rev 5

By default, the microcontroller is in Run mode after a system or a power Reset. It is up to the

user to select one of the low-power modes described below:

•Sleep mode

In Sleep mode, only the CPU is stopped. All peripherals continue to operate and can

wake up the CPU when an interrupt/event occurs.

•Low-power run mode

This mode is achieved with VCORE supplied by the low-power regulator to minimize the

regulator's operating current. The code can be executed from SRAM or from Flash,

and the CPU frequency is limited to 2 MHz. The peripherals with independent clock can

be clocked by HSI16.

•Low-power sleep mode

This mode is entered from the low-power run mode. Only the CPU clock is stopped.

When wakeup is triggered by an event or an interrupt, the system reverts to the low-

power run mode.

•Stop 0, Stop 1 and Stop 2 modes

Stop mode achieves the lowest power consumption while retaining the content of

SRAM and registers. All clocks in the VCORE domain are stopped, the PLL, the MSI

RC, the HSI16 RC and the HSE crystal oscillators are disabled. The LSE or LSI is still

running.

The RTC can remain active (Stop mode with RTC, Stop mode without RTC).

Some peripherals with wakeup capability can enable the HSI16 RC during Stop mode

to detect their wakeup condition.

Three Stop modes are available: Stop 0, Stop 1 and Stop 2 modes. In Stop 2 mode,

most of the VCORE domain is put in a lower leakage mode.

Stop 1 offers the largest number of active peripherals and wakeup sources, a smaller

wakeup time but a higher consumption than Stop 2. In Stop 0 mode, the main regulator

remains ON, allowing a very fast wakeup time but with much higher consumption.

The system clock when exiting from Stop 0, Stop 1 or Stop 2 modes can be either MSI

up to 48 MHz or HSI16, depending on software configuration.

•Standby mode

The Standby mode is used to achieve the lowest power consumption with BOR. The

internal regulator is switched off so that the VCORE domain is powered off. The PLL, the

MSI RC, the HSI16 RC and the HSE crystal oscillators are also switched off.

The RTC can remain active (Standby mode with RTC, Standby mode without RTC).

The brown-out reset (BOR) always remains active in Standby mode.

The state of each I/O during standby mode can be selected by software: I/O with

internal pull-up, internal pull-down or floating.

After entering Standby mode, SRAM1 and register contents are lost except for registers

in the Backup domain and Standby circuitry. Optionally, SRAM2 can be retained in

Standby mode, supplied by the low-power Regulator (Standby with SRAM2 retention

mode).

The device exits Standby mode when an external reset (NRST pin), an IWDG reset,

WKUP pin event (configurable rising or falling edge), or an RTC event occurs (alarm,

periodic wakeup, timestamp, tamper) or a failure is detected on LSE (CSS on LSE).

The system clock after wakeup is MSI up to 8 MHz.

DS10969 Rev 5 27/204

STM32L475xx Functional overview

•Shutdown mode

The Shutdown mode allows to achieve the lowest power consumption. The internal

regulator is switched off so that the VCORE domain is powered off. The PLL, the HSI16,

the MSI, the LSI and the HSE oscillators are also switched off.

The RTC can remain active (Shutdown mode with RTC, Shutdown mode without RTC).

The BOR is not available in Shutdown mode. No power voltage monitoring is possible

in this mode, therefore the switch to Backup domain is not supported.

SRAM1, SRAM2 and register contents are lost except for registers in the Backup

domain.

The device exits Shutdown mode when an external reset (NRST pin), a WKUP pin

event (configurable rising or falling edge), or an RTC event occurs (alarm, periodic

wakeup, timestamp, tamper).

The system clock after wakeup is MSI at 4 MHz.

Functional overview STM32L475xx

28/204 DS10969 Rev 5

Table 5. Functionalities depending on the working mode(1)

Peripheral Run Sleep

Low-

power

run

Low-

power

sleep

Stop 0/1 Stop 2 Standby Shutdown

VBAT

Wakeup capability

CPU Y - Y - - --------

Flash memory (up to

1 MB) O(2) O(2) O(2) O(2) ---------

SRAM1 (up to

96 KB) YY

(3) YY

(3) Y-Y------

SRAM2 (32 KB) Y Y(3) YY

(3) Y-Y-O

(4) ----

FSMC OOOO-

--------

Quad SPI O O O O - --------

Backup Registers Y Y Y Y Y -Y-Y-Y-Y

Brown-out reset

(BOR) YYYYY

YYYYY- --

Programmable

Voltage Detector

(PVD)

OOOOOOOO- ----

Peripheral Voltage

Monitor (PVMx;

x=1,2,3,4)

OOOOO

OOO- ----

DMA OOOO-

--------

High Speed Internal

(HSI16) OOOO

(5) -(5) ------

High Speed External

(HSE) OOOO-

--------

Low Speed Internal

(LSI) OOOOO

-O-O----

Low Speed External

(LSE) OOOOO

-O-O-O-O

Multi-Speed Internal

(MSI) OOOO-

--------

Clock Security

System (CSS) OOOO-

--------

Clock Security

System on LSE OOOOO

OOOOO- --

RTC / Auto wakeup O O O O O OOOOOOOO

Number of RTC

Tamper pins 33333

O3O3O3O3

DS10969 Rev 5 29/204

STM32L475xx Functional overview

USB OTG FS O(8) O(8) ---O- ------

USARTx

(x=1,2,3,4,5) OOOOO

(6) O(6) -------

Low-power UART

(LPUART) OOOOO

(6) O(6) O(6) O(6) -----

I2Cx (x=1,2) O O O O O(7) O(7) -------

I2C3 OOOOO

(7) O(7) O(7) O(7) -----

SPIx (x=1,2,3) O O O O - --------

CAN OOOO-

--------

SDMMC1 O O O O - --------

SWPMI1 OOOO-

O- ------

SAIx (x=1,2) O O O O - --------

DFSDM1 OOOO-

--------

ADCx (x=1,2,3) O O O O - --------

DAC1 O O O O O --------

VREFBUF O O O O O --------

OPAMPx (x=1,2) O O O O O --------

COMPx (x=1,2) O O O O O OOO- ----

Temperature sensor O O O O - --------

Timers (TIMx) O O O O - --------

Low-power timer 1

(LPTIM1) OOOOO

OOO- ----

Low-power timer 2

(LPTIM2) OOOOO

O- ------

Independent

watchdog (IWDG) OOOOO

OOOOO- --

Window watchdog

(WWDG) OOOO-

--------

SysTick timer O O O O - --------

Touch sensing

controller (TSC) OOOO-

--------

Random number

generator (RNG) O(8) O(8) -----------

Table 5. Functionalities depending on the working mode(1) (continued)

Peripheral Run Sleep

Low-

power

run

Low-

power

sleep

Stop 0/1 Stop 2 Standby Shutdown

VBAT

Wakeup capability

Functional overview STM32L475xx

30/204 DS10969 Rev 5

3.9.5 Reset mode

In order to improve the consumption under reset, the I/Os state under and after reset is

“analog state” (the I/O schmitt trigger is disable). In addition, the internal reset pull-up is

deactivated when the reset source is internal.

3.9.6 VBAT operation

The VBAT pin allows to power the device VBAT domain from an external battery, an external

supercapacitor, or from VDD when no external battery and an external supercapacitor are

present. The VBAT pin supplies the RTC with LSE and the backup registers. Three anti-

tamper detection pins are available in VBAT mode.

VBAT operation is automatically activated when VDD is not present.

An internal VBAT battery charging circuit is embedded and can be activated when VDD is

present.

Note: When the microcontroller is supplied from VBAT, external interrupts and RTC alarm/events

do not exit it from VBAT operation.

CRC calculation unit O O O O - --------

GPIOs OOOOO

OOO(9)

pins

(10)

(11)

pins

(10)

1. Legend: Y = Yes (Enable). O = Optional (Disable by default. Can be enabled by software). - = Not available.

2. The Flash can be configured in power-down mode. By default, it is not in power-down mode.

3. The SRAM clock can be gated on or off.

4. SRAM2 content is preserved when the bit RRS is set in PWR_CR3 register.

5. Some peripherals with wakeup from Stop capability can request HSI16 to be enabled. In this case, HSI16 is woken up by

the peripheral, and only feeds the peripheral which requested it. HSI16 is automatically put off when the peripheral does not

need it anymore.

6. UART and LPUART reception is functional in Stop mode, and generates a wakeup interrupt on Start, address match or

received frame event.

7. I2C address detection is functional in Stop mode, and generates a wakeup interrupt in case of address match.

8. Voltage scaling Range 1 only.

9. I/Os can be configured with internal pull-up, pull-down or floating in Standby mode.

10. The I/Os with wakeup from Standby/Shutdown capability are: PA0, PC13, PE6, PA2, PC5.

11. I/Os can be configured with internal pull-up, pull-down or floating in Shutdown mode but the configuration is lost when

exiting the Shutdown mode.

Table 5. Functionalities depending on the working mode(1) (continued)

Peripheral Run Sleep

Low-

power

run

Low-

power

sleep

Stop 0/1 Stop 2 Standby Shutdown

VBAT

Wakeup capability

DS10969 Rev 5 31/204

STM32L475xx Functional overview

3.10 Interconnect matrix

Several peripherals have direct connections between them. This allows autonomous

communication between peripherals, saving CPU resources thus power supply

consumption. In addition, these hardware connections allow fast and predictable latency.

Depending on peripherals, these interconnections can operate in Run, Sleep, low-power run

and sleep, Stop 0, Stop 1 and Stop 2 modes.

Table 6. STM32L475xx peripherals interconnect matrix

Interconnect source Interconnect

destination Interconnect action

Run

Sleep

Low-power run

Low-power sleep

Stop 0 / Stop 1

Stop 2

TIMx

TIMx Timers synchronization or chaining Y Y Y Y - -

ADCx

DAC1

DFSDM1

Conversion triggers Y Y Y Y - -

DMA Memory to memory transfer trigger Y Y Y Y - -

COMPx Comparator output blanking Y Y Y Y - -

TIM16/TIM17 IRTIM Infrared interface output generation Y Y Y Y - -

COMPx

TIM1, 8

TIM2, 3

Timer input channel, trigger, break from

analog signals comparison YYYY - -

LPTIMERx Low-power timer triggered by analog

signals comparison YYYYYY

(1)

ADCx TIM1, 8 Timer triggered by analog watchdog Y Y Y Y - -

RTC

TIM16 Timer input channel from RTC events Y Y Y Y - -

LPTIMERx Low-power timer triggered by RTC alarms

or tampers YYYYYY

(1)

All clocks sources (internal

and external)

TIM2

TIM15, 16, 17

Clock source used as input channel for

RC measurement and trimming YYYY - -

USB TIM2 Timer triggered by USB SOF Y Y - - - -

CSS

CPU (hard fault)

RAM (parity error)

Flash memory (ECC error)

COMPx

PVD

DFSDM1 (analog

watchdog, short circuit

detection)

TIM1,8

TIM15,16,17 Timer break Y Y Y Y - -

Functional overview STM32L475xx

32/204 DS10969 Rev 5

GPIO

TIMx External trigger Y Y Y Y - -

LPTIMERx External trigger Y Y Y Y Y Y

(1)

ADCx

DAC1

DFSDM1

Conversion external trigger Y Y Y Y - -

1. LPTIM1 only.

Table 6. STM32L475xx peripherals interconnect matrix (continued)

Interconnect source Interconnect

destination Interconnect action

Run

Sleep

Low-power run

Low-power sleep

Stop 0 / Stop 1

Stop 2

DS10969 Rev 5 33/204

STM32L475xx Functional overview

3.11 Clocks and startup

The clock controller (see Figure 4) distributes the clocks coming from different oscillators to

the core and the peripherals. It also manages clock gating for low-power modes and

ensures clock robustness. It features:

•Clock prescaler: to get the best trade-off between speed and current consumption,

the clock frequency to the CPU and peripherals can be adjusted by a programmable

prescaler

•Safe clock switching: clock sources can be changed safely on the fly in run mode

through a configuration register.

•Clock management: to reduce power consumption, the clock controller can stop the

clock to the core, individual peripherals or memory.

•System clock source: four different clock sources can be used to drive the master

clock SYSCLK:

– 4-48 MHz high-speed external crystal or ceramic resonator (HSE), that can supply

a PLL. The HSE can also be configured in bypass mode for an external clock.

– 16 MHz high-speed internal RC oscillator (HSI16), trimmable by software, that can

supply a PLL

– Multispeed internal RC oscillator (MSI), trimmable by software, able to generate

12 frequencies from 100 kHz to 48 MHz. When a 32.768 kHz clock source is

available in the system (LSE), the MSI frequency can be automatically trimmed by

hardware to reach better than ±0.25% accuracy. In this mode the MSI can feed the

USB device, saving the need of an external high-speed crystal (HSE). The MSI

can supply a PLL.

– System PLL which can be fed by HSE, HSI16 or MSI, with a maximum frequency

at 80 MHz.

•Auxiliary clock source: two ultralow-power clock sources that can be used to drive

the real-time clock:

– 32.768 kHz low-speed external crystal (LSE), supporting four drive capability

modes. The LSE can also be configured in bypass mode for an external clock.

– 32 kHz low-speed internal RC (LSI), also used to drive the independent watchdog.

The LSI clock accuracy is ±5% accuracy.

•Peripheral clock sources: Several peripherals (USB, SDMMC, RNG, SAI, USARTs,

I2Cs, LPTimers, ADC, SWPMI) have their own independent clock whatever the system

clock. Three PLLs, each having three independent outputs allowing the highest

flexibility, can generate independent clocks for the ADC, the USB/SDMMC/RNG and

the two SAIs.

•Startup clock: after reset, the microcontroller restarts by default with an internal 4 MHz

clock (MSI). The prescaler ratio and clock source can be changed by the application

program as soon as the code execution starts.

•Clock security system (CSS): this feature can be enabled by software. If a HSE clock

failure occurs, the master clock is automatically switched to HSI16 and a software

Functional overview STM32L475xx

34/204 DS10969 Rev 5

interrupt is generated if enabled. LSE failure can also be detected and generated an

interrupt.

•Clock-out capability:

–MCO: microcontroller clock output: it outputs one of the internal clocks for

external use by the application. Low frequency clocks (LSI, LSE) are available

down to Stop 1 low power state.

–LSCO: low speed clock output: it outputs LSI or LSE in all low-power modes

down to Standby mode. LSE can also be output on LSCO in Shutdown mode.

LSCO is not available in VBAT mode.

Several prescalers allow to configure the AHB frequency, the high speed APB (APB2) and

the low speed APB (APB1) domains. The maximum frequency of the AHB and the APB

domains is 80 MHz.

DS10969 Rev 5 35/204

STM32L475xx Functional overview

Figure 4. Clock tree

MSv37695V2

SYSCLK

MCO

LSCO

SAI2_EXTCLK

48 MHz clock to USB, RNG, SDMMC

to ADC

to IWDG

to RTC

to PWR

HCLK

to AHB bus, core, memory and DMA

FCLK Cortex free running clock

to Cortex system timer

to APB1 peripherals

to APB2 peripherals

PCLK1

PCLK2

to SAI1

to SAI2

LSE

HSI16

SYSCLK to USARTx

x=2..5

to LPUART1

to I2Cx

x=1,2,3

to LPTIMx

x=1,2

SAI1_EXTCLK

to SWPMI

to TIMx

x=2..7

OSC32_OUT

OSC32_IN

MSI HSI16

HSE

HSI16

LSI

LSE

HSE

SYSCLK

HSE

MSI

HSI16

MSI

SYSCLK

LSE OSC

32.768 kHz /32

AHB

PRESC

/ 1,2,..512

/ 8

APB1

PRESC

/ 1,2,4,8,16

x1 or x2

HSI16

SYSCLK

LSI

LSE

HSI16

APB2

PRESC

/ 1,2,4,8,16

to TIMx

x=1,8,15,16,17

x1 or x2

USART1

LSE

HSI16

SYSCLK

/ M

MSI RC

100 kHz – 48 MHz

HSI RC

16 MHz

HSE OSC

4-48 MHz

Clock

detector

OSC_OUT

OSC_IN

/ 1→16

LSI RC 32 kHz

Clock

source

control

PLLSAI3CLK

PLL48M1CLK

PLLCLK

PLLSAI1CLK

PLL48M2CLK

PLLADC1CLK

PLLSAI2CLK

PLLADC2CLK

PLLCLK

MSI

PLLSAI1

VCO F

VCO

/ P

/ R

/ Q

PLLSAI2

VCO F

VCO

/ P

/ R

/ Q

PLL

VCO F

VCO

/ P

/ R

/ Q

Functional overview STM32L475xx

36/204 DS10969 Rev 5

3.12 General-purpose inputs/outputs (GPIOs)

Each of the GPIO pins can be configured by software as output (push-pull or open-drain), as

input (with or without pull-up or pull-down) or as peripheral alternate function. Most of the

GPIO pins are shared with digital or analog alternate functions. Fast I/O toggling can be

achieved thanks to their mapping on the AHB2 bus.

The I/Os alternate function configuration can be locked if needed following a specific

sequence in order to avoid spurious writing to the I/Os registers.

3.13 Direct memory access controller (DMA)

The device embeds 2 DMAs. Refer to Table 7: DMA implementation for the features

implementation.

Direct memory access (DMA) is used in order to provide high-speed data transfer between

peripherals and memory as well as memory to memory. Data can be quickly moved by DMA

without any CPU actions. This keeps CPU resources free for other operations.

The two DMA controllers have 14 channels in total, each dedicated to managing memory

access requests from one or more peripherals. Each has an arbiter for handling the priority

between DMA requests.

The DMA supports:

•14 independently configurable channels (requests)

•Each channel is connected to dedicated hardware DMA requests, software trigger is

also supported on each channel. This configuration is done by software.

•Priorities between requests from channels of one DMA are software programmable (4

levels consisting of very high, high, medium, low) or hardware in case of equality

(request 1 has priority over request 2, etc.)

•Independent source and destination transfer size (byte, half word, word), emulating

packing and unpacking. Source/destination addresses must be aligned on the data

size.

•Support for circular buffer management

•3 event flags (DMA Half Transfer, DMA Transfer complete and DMA Transfer Error)

logically ORed together in a single interrupt request for each channel

•Memory-to-memory transfer

•Peripheral-to-memory and memory-to-peripheral, and peripheral-to-peripheral

transfers

•Access to Flash, SRAM, APB and AHB peripherals as source and destination

•Programmable number of data to be transferred: up to 65536.

Table 7. DMA implementation

DMA features DMA1 DMA2

Number of regular channels 7 7

DS10969 Rev 5 37/204

STM32L475xx Functional overview

3.14 Interrupts and events

3.14.1 Nested vectored interrupt controller (NVIC)

The devices embed a nested vectored interrupt controller able to manage 16 priority levels,

and handle up to 80 maskable interrupt channels plus the 16 interrupt lines of the Cortex®-

M4.

The NVIC benefits are the following:

•Closely coupled NVIC gives low latency interrupt processing

•Interrupt entry vector table address passed directly to the core

•Allows early processing of interrupts

•Processing of late arriving higher priority interrupts

•Support for tail chaining

•Processor state automatically saved on interrupt entry, and restored on interrupt exit,

with no instruction overhead

The NVIC hardware block provides flexible interrupt management features with minimal

interrupt latency.

3.14.2 Extended interrupt/event controller (EXTI)

The extended interrupt/event controller consists of 39 edge detector lines used to generate

interrupt/event requests and wake-up the system from Stop mode. Each external line can be

independently configured to select the trigger event (rising edge, falling edge, both) and can

be masked independently. A pending register maintains the status of the interrupt requests.

The internal lines are connected to peripherals with wakeup from Stop mode capability. The

EXTI can detect an external line with a pulse width shorter than the internal clock period. Up

to 82 GPIOs can be connected to the 16 external interrupt lines.

Functional overview STM32L475xx

38/204 DS10969 Rev 5

3.15 Analog to digital converter (ADC)

The device embeds 3 successive approximation analog-to-digital converters with the

following features:

•12-bit native resolution, with built-in calibration

•5.33 Msps maximum conversion rate with full resolution

– Down to 18.75 ns sampling time

– Increased conversion rate for lower resolution (up to 8.88 Msps for 6-bit

resolution)

•Up to 16 external channels, some of them shared between ADC1 and ADC2, or ADC1,

ADC2 and ADC3.

•5 internal channels: internal reference voltage, temperature sensor, VBAT/3,

DAC1_OUT1 and DAC1_OUT2.

•One external reference pin is available on some package, allowing the input voltage

range to be independent from the power supply

•Single-ended and differential mode inputs

•Low-power design

– Capable of low-current operation at low conversion rate (consumption decreases

linearly with speed)

– Dual clock domain architecture: ADC speed independent from CPU frequency

•Highly versatile digital interface

– Single-shot or continuous/discontinuous sequencer-based scan mode: 2 groups

of analog signals conversions can be programmed to differentiate background and

high-priority real-time conversions

– Handles two ADC converters for dual mode operation (simultaneous or

interleaved sampling modes)

– Each ADC support multiple trigger inputs for synchronization with on-chip timers

and external signals

– Results stored into 3 data register or in RAM with DMA controller support

– Data pre-processing: left/right alignment and per channel offset compensation

– Built-in oversampling unit for enhanced SNR

– Channel-wise programmable sampling time

– Three analog watchdog for automatic voltage monitoring, generating interrupts

and trigger for selected timers

– Hardware assistant to prepare the context of the injected channels to allow fast

context switching

3.15.1 Temperature sensor

The temperature sensor (TS) generates a voltage VTS that varies linearly with temperature.

The temperature sensor is internally connected to the ADC1_IN17 and ADC3_IN17 input

channels which is used to convert the sensor output voltage into a digital value.

The sensor provides good linearity but it has to be calibrated to obtain good overall

accuracy of the temperature measurement. As the offset of the temperature sensor varies

from chip to chip due to process variation, the uncalibrated internal temperature sensor is

suitable for applications that detect temperature changes only.

DS10969 Rev 5 39/204

STM32L475xx Functional overview

To improve the accuracy of the temperature sensor measurement, each device is

individually factory-calibrated by ST. The temperature sensor factory calibration data are

stored by ST in the system memory area, accessible in read-only mode.

3.15.2 Internal voltage reference (VREFINT)

The internal voltage reference (VREFINT) provides a stable (bandgap) voltage output for

the ADC and Comparators. VREFINT is internally connected to the ADC1_IN0 input

channel. The precise voltage of VREFINT is individually measured for each part by ST

during production test and stored in the system memory area. It is accessible in read-only

mode.

3.15.3 VBAT battery voltage monitoring

This embedded hardware feature allows the application to measure the VBAT battery voltage

using the internal ADC channel ADC1_IN18 or ADC3_IN18. As the VBAT voltage may be

higher than VDDA, and thus outside the ADC input range, the VBAT pin is internally

connected to a bridge divider by 3. As a consequence, the converted digital value is one

third the VBAT voltage.

3.16 Digital to analog converter (DAC)

Two 12-bit buffered DAC channels can be used to convert digital signals into analog voltage

signal outputs. The chosen design structure is composed of integrated resistor strings and

an amplifier in inverting configuration.

Table 8. Temperature sensor calibration values

Calibration value name Description Memory address

TS_CAL1

TS ADC raw data acquired at a

temperature of 30 °C (± 5 °C),

VDDA = VREF+ = 3.0 V (± 10 mV)

0x1FFF 75A8 - 0x1FFF 75A9

TS_CAL2

TS ADC raw data acquired at a

temperature of 110 °C (± 5 °C),

VDDA = VREF+ = 3.0 V (± 10 mV)

0x1FFF 75CA - 0x1FFF 75CB

Table 9. Internal voltage reference calibration values

Calibration value name Description Memory address

VREFINT

Raw data acquired at a

temperature of 30 °C (± 5 °C),

VDDA = VREF+ = 3.0 V (± 10 mV)

0x1FFF 75AA - 0x1FFF 75AB

Functional overview STM32L475xx

40/204 DS10969 Rev 5

This digital interface supports the following features:

•Up to two DAC output channels

•8-bit or 12-bit output mode

•Buffer offset calibration (factory and user trimming)

•Left or right data alignment in 12-bit mode

•Synchronized update capability

•Noise-wave generation

•Triangular-wave generation

•Dual DAC channel independent or simultaneous conversions

•DMA capability for each channel

•External triggers for conversion

•Sample and hold low-power mode, with internal or external capacitor

The DAC channels are triggered through the timer update outputs that are also connected

to different DMA channels.

3.17 Voltage reference buffer (VREFBUF)

The STM32L475xx devices embed an voltage reference buffer which can be used as

voltage reference for ADCs, DAC and also as voltage reference for external components

through the VREF+ pin.

The internal voltage reference buffer supports two voltages:

•2.048 V

•2.5 V

An external voltage reference can be provided through the VREF+ pin when the internal

voltage reference buffer is off.

The VREF+ pin is double-bonded with VDDA on some packages. In these packages the

internal voltage reference buffer is not available.

Figure 5. Voltage reference buffer

MSv40197V1

VREFBUF

Low frequency

cut-off capacitor

DAC, ADC

Bandgap +

VDDA

100 nF

VREF+

DS10969 Rev 5 41/204

STM32L475xx Functional overview

3.18 Comparators (COMP)

The STM32L475xx devices embed two rail-to-rail comparators with programmable

reference voltage (internal or external), hysteresis and speed (low speed for low-power) and

with selectable output polarity.

The reference voltage can be one of the following:

•External I/O

•DAC output channels

•Internal reference voltage or submultiple (1/4, 1/2, 3/4).

All comparators can wake up from Stop mode, generate interrupts and breaks for the timers

and can be also combined into a window comparator.

3.19 Operational amplifier (OPAMP)

The STM32L475xx embeds two operational amplifiers with external or internal follower

routing and PGA capability.

The operational amplifier features:

•Low input bias current

•Low offset voltage

•Low-power mode

•Rail-to-rail input

3.20 Touch sensing controller (TSC)

The touch sensing controller provides a simple solution for adding capacitive sensing

functionality to any application. Capacitive sensing technology is able to detect finger

presence near an electrode which is protected from direct touch by a dielectric (glass,

plastic, ...). The capacitive variation introduced by the finger (or any conductive object) is

measured using a proven implementation based on a surface charge transfer acquisition

principle.

The touch sensing controller is fully supported by the STMTouch touch sensing firmware

library which is free to use and allows touch sensing functionality to be implemented reliably

in the end application.

Functional overview STM32L475xx

42/204 DS10969 Rev 5

The main features of the touch sensing controller are the following:

•Proven and robust surface charge transfer acquisition principle

•Supports up to 21 capacitive sensing channels

•Up to 3 capacitive sensing channels can be acquired in parallel offering a very good

response time

•Spread spectrum feature to improve system robustness in noisy environments

•Full hardware management of the charge transfer acquisition sequence

•Programmable charge transfer frequency

•Programmable sampling capacitor I/O pin

•Programmable channel I/O pin

•Programmable max count value to avoid long acquisition when a channel is faulty

•Dedicated end of acquisition and max count error flags with interrupt capability

•One sampling capacitor for up to 3 capacitive sensing channels to reduce the system

components

•Compatible with proximity, touchkey, linear and rotary touch sensor implementation

•Designed to operate with STMTouch touch sensing firmware library

Note: The number of capacitive sensing channels is dependent on the size of the packages and

subject to I/O availability.

3.21 Digital filter for Sigma-Delta Modulators (DFSDM)

The device embeds one DFSDM with 4 digital filters modules and 8 external input serial

channels (transceivers) or alternately 8 internal parallel inputs support.

The DFSDM peripheral is dedicated to interface the external  modulators to

microcontroller and then to perform digital filtering of the received data streams (which

represent analog value on  modulators inputs). DFSDM can also interface PDM (Pulse

Density Modulation) microphones and perform PDM to PCM conversion and filtering in

DS10969 Rev 5 43/204

STM32L475xx Functional overview

hardware. DFSDM features optional parallel data stream inputs from microcontrollers

memory (through DMA/CPU transfers into DFSDM).

DFSDM transceivers support several serial interface formats (to support various 

modulators). DFSDM digital filter modules perform digital processing according user

selected filter parameters with up to 24-bit final ADC resolution.

The DFSDM peripheral supports:

•8 multiplexed input digital serial channels:

– configurable SPI interface to connect various SD modulator(s)

– configurable Manchester coded 1 wire interface support

– PDM (Pulse Density Modulation) microphone input support

– maximum input clock frequency up to 20 MHz (10 MHz for Manchester coding)

– clock output for SD modulator(s): 0..20 MHz

•alternative inputs from 8 internal digital parallel channels (up to 16 bit input resolution):

– internal sources: device memory data streams (DMA)

•4 digital filter modules with adjustable digital signal processing:

–Sinc

x filter: filter order/type (1..5), oversampling ratio (up to 1..1024)

– integrator: oversampling ratio (1..256)

•up to 24-bit output data resolution, signed output data format

•automatic data offset correction (offset stored in register by user)

•continuous or single conversion

•start-of-conversion triggered by:

– software trigger

– internal timers

– external events

– start-of-conversion synchronously with first digital filter module (DFSDM1_FLT0)

•analog watchdog feature:

– low value and high value data threshold registers

– dedicated configurable Sincx digital filter (order = 1..3, oversampling ratio = 1..32)

– input from final output data or from selected input digital serial channels

– continuous monitoring independently from standard conversion

•short circuit detector to detect saturated analog input values (bottom and top range):

– up to 8-bit counter to detect 1..256 consecutive 0’s or 1’s on serial data stream

– monitoring continuously each input serial channel

•break signal generation on analog watchdog event or on short circuit detector event

•extremes detector:

– storage of minimum and maximum values of final conversion data

– refreshed by software

•DMA capability to read the final conversion data

•interrupts: end of conversion, overrun, analog watchdog, short circuit, input serial

channel clock absence

•“regular” or “injected” conversions:

– “regular” conversions can be requested at any time or even in continuous mode

Functional overview STM32L475xx

44/204 DS10969 Rev 5

without having any impact on the timing of “injected” conversions

– “injected” conversions for precise timing and with high conversion priority

3.22 Random number generator (RNG)

All devices embed an RNG that delivers 32-bit random numbers generated by an integrated

analog circuit.

3.23 Timers and watchdogs

The STM32L475xx includes two advanced control timers, up to nine general-purpose

timers, two basic timers, two low-power timers, two watchdog timers and a SysTick timer.

The table below compares the features of the advanced control, general purpose and basic

timers.

Table 10. DFSDM1 implementation

DFSDM features DFSDM1

Number of channels 8

Number of filters 4

Input from internal ADC -

Supported trigger sources 10

Pulses skipper -

ID registers support -

Table 11. Timer feature comparison

Timer type Timer Counter

resolution

Counter

type

Prescaler

factor

DMA

request

generation

Capture/

compare

channels

Complementary

outputs

Advanced

control TIM1, TIM8 16-bit Up, down,

Up/down

Any integer

between 1

and 65536

Yes 4 3

General-

purpose TIM2, TIM5 32-bit Up, down,

Up/down

Any integer

between 1

and 65536

Yes 4 No

General-

purpose TIM3, TIM4 16-bit Up, down,

Up/down

Any integer

between 1

and 65536

Yes 4 No

General-

purpose TIM15 16-bit Up

Any integer

between 1

and 65536

Yes 2 1

DS10969 Rev 5 45/204

STM32L475xx Functional overview

3.23.1 Advanced-control timer (TIM1, TIM8)

The advanced-control timer can each be seen as a three-phase PWM multiplexed on 6

channels. They have complementary PWM outputs with programmable inserted dead-

times. They can also be seen as complete general-purpose timers. The 4 independent

channels can be used for:

•Input capture

•Output compare

•PWM generation (edge or center-aligned modes) with full modulation capability (0-

100%)

•One-pulse mode output

In debug mode, the advanced-control timer counter can be frozen and the PWM outputs

disabled to turn off any power switches driven by these outputs.

Many features are shared with those of the general-purpose TIMx timers (described in

Section 3.23.2) using the same architecture, so the advanced-control timers can work

together with the TIMx timers via the Timer Link feature for synchronization or event

chaining.

General-

purpose TIM16, TIM17 16-bit Up

Any integer

between 1

and 65536

Yes 1 1

Basic TIM6, TIM7 16-bit Up

Any integer

between 1

and 65536

Yes 0 No

Table 11. Timer feature comparison (continued)

Timer type Timer Counter

resolution

Counter

type

Prescaler

factor

DMA

request

generation

Capture/

compare

channels

Complementary

outputs

Functional overview STM32L475xx

46/204 DS10969 Rev 5

3.23.2 General-purpose timers (TIM2, TIM3, TIM4, TIM5, TIM15, TIM16,

TIM17)

There are up to seven synchronizable general-purpose timers embedded in the

STM32L475xx (see Table 11 for differences). Each general-purpose timer can be used to

generate PWM outputs, or act as a simple time base.

•TIM2, TIM3, TIM4 and TIM5

They are full-featured general-purpose timers:

– TIM2 and TIM5 have a 32-bit auto-reload up/downcounter and 32-bit prescaler

– TIM3 and TIM4 have 16-bit auto-reload up/downcounter and 16-bit prescaler.

These timers feature 4 independent channels for input capture/output compare, PWM

or one-pulse mode output. They can work together, or with the other general-purpose

timers via the Timer Link feature for synchronization or event chaining.

The counters can be frozen in debug mode.

All have independent DMA request generation and support quadrature encoders.

•TIM15, 16 and 17

They are general-purpose timers with mid-range features:

They have 16-bit auto-reload upcounters and 16-bit prescalers.

– TIM15 has 2 channels and 1 complementary channel

– TIM16 and TIM17 have 1 channel and 1 complementary channel

All channels can be used for input capture/output compare, PWM or one-pulse mode

output.

The timers can work together via the Timer Link feature for synchronization or event

chaining. The timers have independent DMA request generation.

The counters can be frozen in debug mode.

3.23.3 Basic timers (TIM6 and TIM7)

The basic timers are mainly used for DAC trigger generation. They can also be used as

generic 16-bit timebases.

3.23.4 Low-power timer (LPTIM1 and LPTIM2)

The devices embed two low-power timers. These timers have an independent clock and are

running in Stop mode if they are clocked by LSE, LSI or an external clock. They are able to

wakeup the system from Stop mode.

LPTIM1 is active in Stop 0, Stop 1 and Stop 2 modes.

LPTIM2 is active in Stop 0 and Stop 1 mode.

DS10969 Rev 5 47/204

STM32L475xx Functional overview

This low-power timer supports the following features:

•16-bit up counter with 16-bit autoreload register

•16-bit compare register

•Configurable output: pulse, PWM

•Continuous/ one shot mode

•Selectable software/hardware input trigger

•Selectable clock source

– Internal clock sources: LSE, LSI, HSI16 or APB clock

– External clock source over LPTIM input (working even with no internal clock

source running, used by pulse counter application).

•Programmable digital glitch filter

•Encoder mode (LPTIM1 only)

3.23.5 Infrared interface (IRTIM)

The STM32L475xx includes one infrared interface (IRTIM). It can be used with an infrared

LED to perform remote control functions. It uses TIM16 and TIM17 output channels to

generate output signal waveforms on IR_OUT pin.

3.23.6 Independent watchdog (IWDG)

The independent watchdog is based on a 12-bit downcounter and 8-bit prescaler. It is

clocked from an independent 32 kHz internal RC (LSI) and as it operates independently

from the main clock, it can operate in Stop and Standby modes. It can be used either as a

watchdog to reset the device when a problem occurs, or as a free running timer for

application timeout management. It is hardware or software configurable through the option

bytes. The counter can be frozen in debug mode.

3.23.7 System window watchdog (WWDG)

The window watchdog is based on a 7-bit downcounter that can be set as free running. It

can be used as a watchdog to reset the device when a problem occurs. It is clocked from

the main clock. It has an early warning interrupt capability and the counter can be frozen in

debug mode.

3.23.8 SysTick timer

This timer is dedicated to real-time operating systems, but could also be used as a standard

down counter. It features:

•A 24-bit down counter

•Autoreload capability

•Maskable system interrupt generation when the counter reaches 0.

•Programmable clock source

Functional overview STM32L475xx

48/204 DS10969 Rev 5

3.24 Real-time clock (RTC) and backup registers

The RTC is an independent BCD timer/counter. It supports the following features:

•Calendar with subsecond, seconds, minutes, hours (12 or 24 format), week day, date,

month, year, in BCD (binary-coded decimal) format.

•Automatic correction for 28, 29 (leap year), 30, and 31 days of the month.

•Two programmable alarms.

•On-the-fly correction from 1 to 32767 RTC clock pulses. This can be used to

synchronize it with a master clock.

•Reference clock detection: a more precise second source clock (50 or 60 Hz) can be

used to enhance the calendar precision.

•Digital calibration circuit with 0.95 ppm resolution, to compensate for quartz crystal

inaccuracy.

•Three anti-tamper detection pins with programmable filter.

•Timestamp feature which can be used to save the calendar content. This function can

be triggered by an event on the timestamp pin, or by a tamper event, or by a switch to

VBAT mode.

•17-bit auto-reload wakeup timer (WUT) for periodic events with programmable

resolution and period.

The RTC and the 32 backup registers are supplied through a switch that takes power either

from the VDD supply when present or from the VBAT pin.

The backup registers are 32-bit registers used to store 128 bytes of user application data

when VDD power is not present. They are not reset by a system or power reset, or when the

device wakes up from Standby or Shutdown mode.

The RTC clock sources can be:

•A 32.768 kHz external crystal (LSE)

•An external resonator or oscillator (LSE)

•The internal low power RC oscillator (LSI, with typical frequency of 32 kHz)

•The high-speed external clock (HSE) divided by 32.

The RTC is functional in VBAT mode and in all low-power modes when it is clocked by the

LSE. When clocked by the LSI, the RTC is not functional in VBAT mode, but is functional in

all low-power modes except Shutdown mode.

All RTC events (Alarm, WakeUp Timer, Timestamp or Tamper) can generate an interrupt

and wakeup the device from the low-power modes.

DS10969 Rev 5 49/204

STM32L475xx Functional overview

3.25 Inter-integrated circuit interface (I2C)

The device embeds three I2C. Refer to Table 12: I2C implementation for the features

implementation.

The I2C bus interface handles communications between the microcontroller and the serial

I2C bus. It controls all I2C bus-specific sequencing, protocol, arbitration and timing.

The I2C peripheral supports:

•I2C-bus specification and user manual rev. 5 compatibility:

– Slave and master modes, multimaster capability

– Standard-mode (Sm), with a bitrate up to 100 kbit/s

– Fast-mode (Fm), with a bitrate up to 400 kbit/s

– Fast-mode Plus (Fm+), with a bitrate up to 1 Mbit/s and 20 mA output drive I/Os

– 7-bit and 10-bit addressing mode, multiple 7-bit slave addresses

– Programmable setup and hold times

– Optional clock stretching

•System Management Bus (SMBus) specification rev 2.0 compatibility:

– Hardware PEC (Packet Error Checking) generation and verification with ACK

control

– Address resolution protocol (ARP) support

– SMBus alert

•Power System Management Protocol (PMBusTM) specification rev 1.1 compatibility

•Independent clock: a choice of independent clock sources allowing the I2C

communication speed to be independent from the PCLK reprogramming. Refer to

Figure 4: Clock tree.

•Wakeup from Stop mode on address match

•Programmable analog and digital noise filters

•1-byte buffer with DMA capability

Table 12. I2C implementation

I2C features(1)

1. X: supported

I2C1 I2C2 I2C3

Standard-mode (up to 100 kbit/s) X X X

Fast-mode (up to 400 kbit/s) X X X

Fast-mode Plus with 20mA output drive I/Os (up to 1 Mbit/s) X X X

Programmable analog and digital noise filters X X X

SMBus/PMBus hardware support X X X

Independent clock X X X

Wakeup from Stop 0 / Stop 1 mode on address match X X X

Wakeup from Stop 2 mode on address match - - X

Functional overview STM32L475xx

50/204 DS10969 Rev 5

3.26 Universal synchronous/asynchronous receiver transmitter

(USART)

The STM32L475xx devices have three embedded universal synchronous receiver

transmitters (USART1, USART2 and USART3) and two universal asynchronous receiver

transmitters (UART4, UART5).

These interfaces provide asynchronous communication, IrDA SIR ENDEC support,

multiprocessor communication mode, single-wire half-duplex communication mode and

have LIN Master/Slave capability. They provide hardware management of the CTS and RTS

signals, and RS485 Driver Enable. They are able to communicate at speeds of up to

10Mbit/s.

USART1, USART2 and USART3 also provide Smart Card mode (ISO 7816 compliant) and

SPI-like communication capability.

All USART have a clock domain independent from the CPU clock, allowing the USARTx

(x=1,2,3,4,5) to wake up the MCU from Stop mode using baudrates up to 204 Kbaud. The

wake up events from Stop mode are programmable and can be:

•Start bit detection

•Any received data frame

•A specific programmed data frame

All USART interfaces can be served by the DMA controller.

Table 13. STM32L475xx USART/UART/LPUART features

USART modes/features(1) USART1 USART2 USART3 UART4 UART5 LPUART1

Hardware flow control for modem XXXXX X

Continuous communication using DMA XXXXX X

Multiprocessor communication XXXXX X

Synchronous mode X X X - - -

Smartcard mode X X X - - -

Single-wire half-duplex communication XXXXX X

IrDA SIR ENDEC block XXXXX -

LIN mode XXXXX -

Dual clock domain XXXXX X

Wakeup from Stop 0 / Stop 1 modes XXXXX X

Wakeup from Stop 2 mode ----- X

Receiver timeout interrupt XXXXX -

Modbus communication XXXXX -

Auto baud rate detection X (4 modes) -

Driver Enable XXXXX X

LPUART/USART data length 7, 8 and 9 bits

1. X = supported.

DS10969 Rev 5 51/204

STM32L475xx Functional overview

3.27 Low-power universal asynchronous receiver transmitter

(LPUART)

The device embeds one Low-Power UART. The LPUART supports asynchronous serial

communication with minimum power consumption. It supports half duplex single wire

communication and modem operations (CTS/RTS). It allows multiprocessor

communication.

The LPUART has a clock domain independent from the CPU clock, and can wakeup the

system from Stop mode using baudrates up to 220 Kbaud. The wake up events from Stop

mode are programmable and can be:

•Start bit detection

•Any received data frame

•A specific programmed data frame

Only a 32.768 kHz clock (LSE) is needed to allow LPUART communication up to 9600

baud. Therefore, even in Stop mode, the LPUART can wait for an incoming frame while

having an extremely low energy consumption. Higher speed clock can be used to reach

higher baudrates.

LPUART interface can be served by the DMA controller.

Functional overview STM32L475xx

52/204 DS10969 Rev 5

3.28 Serial peripheral interface (SPI)

Three SPI interfaces allow communication up to 40 Mbits/s in master and up to 24 Mbits/s

slave modes, in half-duplex, full-duplex and simplex modes. The 3-bit prescaler gives 8

master mode frequencies and the frame size is configurable from 4 bits to 16 bits. The SPI

interfaces support NSS pulse mode, TI mode and Hardware CRC calculation.

All SPI interfaces can be served by the DMA controller.

3.29 Serial audio interfaces (SAI)

The device embeds 2 SAI. Refer to Table 14: SAI implementation for the features

implementation. The SAI bus interface handles communications between the

microcontroller and the serial audio protocol.

The SAI peripheral supports:

•Two independent audio sub-blocks which can be transmitters or receivers with their

respective FIFO.

•8-word integrated FIFOs for each audio sub-block.

•Synchronous or asynchronous mode between the audio sub-blocks.

•Master or slave configuration independent for both audio sub-blocks.

•Clock generator for each audio block to target independent audio frequency sampling

when both audio sub-blocks are configured in master mode.

•Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit.

•Peripheral with large configurability and flexibility allowing to target as example the

following audio protocol: I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97 and SPDIF

out.

•Up to 16 slots available with configurable size and with the possibility to select which

ones are active in the audio frame.

•Number of bits by frame may be configurable.

•Frame synchronization active level configurable (offset, bit length, level).

•First active bit position in the slot is configurable.

•LSB first or MSB first for data transfer.

•Mute mode.

•Stereo/Mono audio frame capability.

•Communication clock strobing edge configurable (SCK).

•Error flags with associated interrupts if enabled respectively.

– Overrun and underrun detection.

– Anticipated frame synchronization signal detection in slave mode.

– Late frame synchronization signal detection in slave mode.

– Codec not ready for the AC’97 mode in reception.

•Interruption sources when enabled:

–Errors.

– FIFO requests.

•DMA interface with 2 dedicated channels to handle access to the dedicated integrated

FIFO of each SAI audio sub-block.

DS10969 Rev 5 53/204

STM32L475xx Functional overview

3.30 Single wire protocol master interface (SWPMI)

The Single wire protocol master interface (SWPMI) is the master interface corresponding to

the Contactless Frontend (CLF) defined in the ETSI TS 102 613 technical specification. The

main features are:

•full-duplex communication mode

•automatic SWP bus state management (active, suspend, resume)

•configurable bitrate up to 2 Mbit/s

•automatic SOF, EOF and CRC handling

SWPMI can be served by the DMA controller.

3.31 Controller area network (CAN)

The CAN is compliant with specifications 2.0A and B (active) with a bit rate up to 1 Mbit/s. It

can receive and transmit standard frames with 11-bit identifiers as well as extended frames

with 29-bit identifiers. It has three transmit mailboxes, two receive FIFOs with 3 stages and

14 scalable filter banks.

Table 14. SAI implementation

SAI features(1)

1. X: supported

SAI1 SAI2

I2S, LSB or MSB-justified, PCM/DSP, TDM, AC’97 X X

Mute mode X X

Stereo/Mono audio frame capability. X X

16 slots X X

Data size configurable: 8-, 10-, 16-, 20-, 24-, 32-bit X X

FIFO Size X (8 Word) X (8 Word)

SPDIF X X

Functional overview STM32L475xx

54/204 DS10969 Rev 5

The CAN peripheral supports:

•Supports CAN protocol version 2.0 A, B Active

•Bit rates up to 1 Mbit/s

•Transmission

– Three transmit mailboxes

– Configurable transmit priority

•Reception

– Two receive FIFOs with three stages

– 14 Scalable filter banks

– Identifier list feature

– Configurable FIFO overrun

•Time-triggered communication option

– Disable automatic retransmission mode

– 16-bit free running timer

– Time Stamp sent in last two data bytes

•Management

– Maskable interrupts

– Software-efficient mailbox mapping at a unique address space

3.32 Secure digital input/output and MultiMediaCards Interface

(SDMMC)

The card host interface (SDMMC) provides an interface between the APB peripheral bus

and MultiMediaCards (MMCs), SD memory cards and SDIO cards.

The SDMMC features include the following:

•Full compliance with MultiMediaCard System Specification Version 4.2. Card support

for three different databus modes: 1-bit (default), 4-bit and 8-bit

•Full compatibility with previous versions of MultiMediaCards (forward compatibility)

•Full compliance with SD Memory Card Specifications Version 2.0

•Full compliance with SD I/O Card Specification Version 2.0: card support for two

different databus modes: 1-bit (default) and 4-bit

•Data transfer up to 48 MHz for the 8 bit mode

•Data write and read with DMA capability

3.33 Universal serial bus on-the-go full-speed (OTG_FS)

The devices embed an USB OTG full-speed device/host/OTG peripheral with integrated

transceivers. The USB OTG FS peripheral is compliant with the USB 2.0 specification and

with the OTG 2.0 specification. It has software-configurable endpoint setting and supports

suspend/resume. The USB OTG controller requires a dedicated 48 MHz clock that can be

provided by the internal multispeed oscillator (MSI) automatically trimmed by 32.768 kHz

external oscillator (LSE).This allows to use the USB device without external high speed

crystal (HSE).

DS10969 Rev 5 55/204

STM32L475xx Functional overview

The major features are:

•Combined Rx and Tx FIFO size of 1.25 KB with dynamic FIFO sizing

•Supports the session request protocol (SRP) and host negotiation protocol (HNP)

•1 bidirectional control endpoint + 5 IN endpoints + 5 OUT endpoints

•12 host channels with periodic OUT support

•HNP/SNP/IP inside (no need for any external resistor)

•USB 2.0 LPM (Link Power Management) support

•Battery Charging Specification Revision 1.2 support

•Internal FS OTG PHY support

For OTG/Host modes, a power switch is needed in case bus-powered devices are

connected.

3.34 Flexible static memory controller (FSMC)

Flexible static memory controller (FSMC) is also named Flexible memory controller (FMC).

The main features of the FMC controller are the following:

•Interface with static-memory mapped devices in multiplexed mode including:

– Static random access memory (SRAM)

– NOR Flash memory

– PSRAM

•8-,16- bit data bus width

•Write FIFO

•The Maximum FMC_CLK frequency for synchronous accesses is HCLK/2.

LCD parallel interface

The FMC can be configured to interface seamlessly with most graphic LCD controllers. It

supports the Intel 8080 and Motorola 6800 modes, and is flexible enough to adapt to

specific LCD interfaces. This LCD parallel interface capability makes it easy to build cost

effective graphic applications using LCD modules with embedded controllers or high

performance solutions using external controllers with dedicated acceleration.

3.35 Quad SPI memory interface (QUADSPI)

The Quad SPI is a specialized communication interface targeting single, dual or quad SPI

flash memories. It can operate in any of the three following modes:

•Indirect mode: all the operations are performed using the QUADSPI registers

•Status polling mode: the external flash status register is periodically read and an

interrupt can be generated in case of flag setting

•Memory-mapped mode: the external Flash is memory mapped and is seen by the

system as if it were an internal memory

Functional overview STM32L475xx

56/204 DS10969 Rev 5

The Quad SPI interface supports:

•Three functional modes: indirect, status-polling, and memory-mapped

•SDR and DDR support

•Fully programmable opcode for both indirect and memory mapped mode

•Fully programmable frame format for both indirect and memory mapped mode

•Each of the 5 following phases can be configured independently (enable, length,

single/dual/quad communication)

– Instruction phase

– Address phase

– Alternate bytes phase

– Dummy cycles phase

– Data phase

•Integrated FIFO for reception and transmission

•8, 16, and 32-bit data accesses are allowed

•DMA channel for indirect mode operations

•Programmable masking for external flash flag management

•Timeout management

•Interrupt generation on FIFO threshold, timeout, status match, operation complete, and

access error

DS10969 Rev 5 57/204

STM32L475xx Functional overview

3.36 Development support

3.36.1 Serial wire JTAG debug port (SWJ-DP)

The Arm® SWJ-DP interface is embedded, and is a combined JTAG and serial wire debug

port that enables either a serial wire debug or a JTAG probe to be connected to the target.

Debug is performed using 2 pins only instead of 5 required by the JTAG (JTAG pins could

be re-use as GPIO with alternate function): the JTAG TMS and TCK pins are shared with

SWDIO and SWCLK, respectively, and a specific sequence on the TMS pin is used to

switch between JTAG-DP and SW-DP.

3.36.2 Embedded Trace Macrocell™

The Arm® Embedded Trace Macrocell™ provides a greater visibility of the instruction and

data flow inside the CPU core by streaming compressed data at a very high rate from the

STM32L475xx through a small number of ETM pins to an external hardware trace port

analyzer (TPA) device. Real-time instruction and data flow activity be recorded and then

formatted for display on the host computer that runs the debugger software. TPA hardware

is commercially available from common development tool vendors.

The Embedded Trace Macrocell™ operates with third party debugger software tools.

Pinouts and pin description STM32L475xx

58/204 DS10969 Rev 5

4 Pinouts and pin description

Figure 6. STM32L475Vx LQFP100 pinout(1)

1. The above figure shows the package top view.

MS31271V3

LQFP100

PA3

VSS

VDD

PA4

PA5

PA6

PA7

PE11

PC4

PC5

PB0

PB1

PB2

PE7

PE8

PE9

PE10

PE12

PE13

PE14

PE15

PB10

PB11

VSS

VDD

VBAT

PE2

PE3

PE4

PE5

PE6

PC13

PC14-OSC32_IN

PC15-OSC32_OUT

VSS

VDD

PH0-OSC_IN

PH1-OSC_OUT

NRST

PC0

PC1

PC2

PC3

VSSA

VREF-

VREF+

VDDA

PA0

PA1

PA2

PA11

VDD

VSS

VDDUSB

PA13

PA12

PA10

PA9

PA8

PC9

PC8

PC7

PC6

PD15

PD14

PD13

PD12

PD11

PD10

PD9

PD8

PB15

PB14

PB13

PB12

PD0

PA14

PA15

PC10

PC11

PC12

PD1

PD2

PD3

PD4

PD5

PD6

PD7

PB3

PB4

PB5

PB6

PB7

BOOT0

PB8

PB9

PE0

PE1

VSS

VDD

100

DS10969 Rev 5 59/204

STM32L475xx Pinouts and pin description

Figure 7. STM32L475Rx LQFP64 pinout(1)

1. The above figure shows the package top view.

MS31272V5

LQFP64

VBAT

PC14-OSC32_IN (PC14)

PC15-OSC32_OUT (PC15)

PH0-OSC_IN (PH0)

PH1-OSC_OUT (PH1)

NRST

PC0

PC1

PC2

PC3

VSSA/VREF-

VDDA/VREF+

PA0

PA1

PA2

PC13

PA3

VSS

PA5

PC4

PB2

VDD

PA4

PC5

PB11

PA6

PA7

VSS

PB0

PB1

PB10

VDD

VDDUSB

PA13 (JTMS-SWDIO)

PA12

PA11

PA10

PA9

PA8

PC9

PC8

PC7

PC6

PB15

PB14

PB13

PB12

VSS

VDD

VSS

BOOT0

PB5

PC12

PB9

PB8

PB4 (NJTRST)

PC10

PB7

PB6

PA15 (JTDI)

PB3 (JTDO-TRACESWO)

PD2

PC11

PA14 (JTCK-SWCLK)

Table 15. Legend/abbreviations used in the pinout table

Name Abbreviation Definition

Pin name Unless otherwise specified in brackets below the pin name, the pin function during and after

reset is the same as the actual pin name

Pin type

S Supply pin

I Input only pin

I/O Input / output pin

I/O structure

FT 5 V tolerant I/O

TT 3.6 V tolerant I/O

B Dedicated BOOT0 pin

RST Bidirectional reset pin with embedded weak pull-up resistor

Option for TT or FT I/Os

_f (1) I/O, Fm+ capable

_u (2) I/O, with USB function supplied by VDDUSB

_a (3) I/O, with Analog switch function supplied by VDDA

Notes Unless otherwise specified by a note, all I/Os are set as analog inputs during and after reset.

Pinouts and pin description STM32L475xx

60/204 DS10969 Rev 5

functions

Alternate

functions Functions selected through GPIOx_AFR registers

Additional

functions Functions directly selected/enabled through peripheral registers

1. The related I/O structures in Table 16 are: FT_f, FT_fa, FT_f, FT_fa.

2. The related I/O structures in Table 16 are: FT_u.

3. The related I/O structures in Table 16 are: FT_a, FT_fa, TT_a.

Table 15. Legend/abbreviations used in the pinout table (continued)

Name Abbreviation Definition

Table 16. STM32L475xx pin definitions

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

- 1 PE2 I/O FT -

TRACECK, TIM3_ETR,

TSC_G7_IO1, FMC_A23,

SAI1_MCLK_A, EVENTOUT

- 2 PE3 I/O FT -

TRACED0, TIM3_CH1,

TSC_G7_IO2, FMC_A19,

SAI1_SD_B, EVENTOUT

- 3 PE4 I/O FT -

TRACED1, TIM3_CH2,

DFSDM1_DATIN3,

TSC_G7_IO3, FMC_A20,

SAI1_FS_A, EVENTOUT

- 4 PE5 I/O FT -

TRACED2, TIM3_CH3,

DFSDM1_CKIN3,

TSC_G7_IO4, FMC_A21,

SAI1_SCK_A, EVENTOUT

- 5 PE6 I/O FT -

TRACED3, TIM3_CH4,

FMC_A22, SAI1_SD_A,

EVENTOUT

RTC_TAMP3/

WKUP3

1 6 VBAT S - - - -

2 7 PC13 I/O FT

(1)

(2) EVENTOUT

RTC_TAMP1/

RTC_TS/

RTC_OUT/

WKUP2

PC14-

OSC32_IN

(PC14)

I/O FT

(1)

(2) EVENTOUT OSC32_IN

PC15-

OSC32_OUT

(PC15)

I/O FT

(1)

(2) EVENTOUT OSC32_OUT

-10 VSS S - - - -

DS10969 Rev 5 61/204

STM32L475xx Pinouts and pin description

-11 VDD S - - - -

512 PH0-OSC_IN

(PH0) I/O FT - EVENTOUT OSC_IN

613

PH1-OSC_OUT

(PH1) I/O FT - EVENTOUT OSC_OUT

7 14 NRST I/O RST - - -

8 15 PC0 I/O FT_fa -

LPTIM1_IN1, I2C3_SCL,

DFSDM1_DATIN4,

LPUART1_RX, LPTIM2_IN1,

EVENTOUT

ADC123_IN1

9 16 PC1 I/O FT_fa -

LPTIM1_OUT, I2C3_SDA,

DFSDM1_CKIN4,

LPUART1_TX, EVENTOUT

ADC123_IN2

10 17 PC2 I/O FT_a -

LPTIM1_IN2, SPI2_MISO,

DFSDM1_CKOUT,

EVENTOUT

ADC123_IN3

11 18 PC3 I/O FT_a -

LPTIM1_ETR, SPI2_MOSI,

SAI1_SD_A, LPTIM2_ETR,

EVENTOUT

ADC123_IN4

-19 VSSA S - - - -

-20 VREF- S - - - -

12 - VSSA/VREF- S - - - -

- 21 VREF+ S - - - VREFBUF_OUT

-22 VDDA S - - - -

13 - VDDA/VREF+ S - - - -

14 23 PA0 I/O FT_a -

TIM2_CH1, TIM5_CH1,

TIM8_ETR, USART2_CTS,

UART4_TX, SAI1_EXTCLK,

TIM2_ETR, EVENTOUT

OPAMP1_VINP, ADC12_IN5,

RTC_TAMP2/WKUP1

15 24 PA1 I/O FT_a -

TIM2_CH2, TIM5_CH2,

USART2_RTS_DE,

UART4_RX, TIM15_CH1N,

EVENTOUT

OPAMP1_VINM, ADC12_IN6

16 25 PA2 I/O FT_a -

TIM2_CH3, TIM5_CH3,

USART2_TX, SAI2_EXTCLK,

TIM15_CH1, EVENTOUT

ADC12_IN7, WKUP4/LSCO

17 26 PA3 I/O TT_a -

TIM2_CH4, TIM5_CH4,

USART2_RX, TIM15_CH2,

EVENTOUT

OPAMP1_

VOUT, ADC12_IN8

Table 16. STM32L475xx pin definitions (continued)

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

Pinouts and pin description STM32L475xx

62/204 DS10969 Rev 5

18 27 VSS S - - - -

19 28 VDD S - - - -

20 29 PA4 I/O TT_a -

SPI1_NSS, SPI3_NSS,

USART2_CK, SAI1_FS_B,

LPTIM2_OUT, EVENTOUT

ADC12_IN9, DAC1_OUT1

21 30 PA5 I/O TT_a -

TIM2_CH1, TIM2_ETR,

TIM8_CH1N, SPI1_SCK,

LPTIM2_ETR, EVENTOUT

ADC12_IN10, DAC1_OUT2

22 31 PA6 I/O FT_a -

TIM1_BKIN, TIM3_CH1,

TIM8_BKIN, SPI1_MISO,

USART3_CTS,

QUADSPI_BK1_IO3,

TIM1_BKIN_COMP2,

TIM8_BKIN_COMP2,

TIM16_CH1, EVENTOUT

OPAMP2_VINP, ADC12_IN11

23 32 PA7 I/O FT_a -

TIM1_CH1N, TIM3_CH2,

TIM8_CH1N, SPI1_MOSI,

QUADSPI_BK1_IO2,

TIM17_CH1, EVENTOUT

OPAMP2_VINM, ADC12_IN12

24 33 PC4 I/O FT_a - USART3_TX, EVENTOUT COMP1_INM, ADC12_IN13

25 34 PC5 I/O FT_a - USART3_RX, EVENTOUT COMP1_INP, ADC12_IN14,

WKUP5

26 35 PB0 I/O TT_a -

TIM1_CH2N, TIM3_CH3,

TIM8_CH2N, USART3_CK,

QUADSPI_BK1_IO1,

COMP1_OUT, EVENTOUT

OPAMP2_

VOUT, ADC12_IN15

27 36 PB1 I/O FT_a -

TIM1_CH3N, TIM3_CH4,

TIM8_CH3N,

DFSDM1_DATIN0,

USART3_RTS_DE,

QUADSPI_BK1_IO0,

LPTIM2_IN1, EVENTOUT

COMP1_INM, ADC12_IN16

28 37 PB2 I/O FT_a -

RTC_OUT, LPTIM1_OUT,

I2C3_SMBA,

DFSDM1_CKIN0, EVENTOUT

COMP1_INP

- 38 PE7 I/O FT -

TIM1_ETR,

DFSDM1_DATIN2, FMC_D4,

SAI1_SD_B, EVENTOUT

- 39 PE8 I/O FT -

TIM1_CH1N,

DFSDM1_CKIN2, FMC_D5,

SAI1_SCK_B, EVENTOUT

Table 16. STM32L475xx pin definitions (continued)

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

DS10969 Rev 5 63/204

STM32L475xx Pinouts and pin description

- 40 PE9 I/O FT -

TIM1_CH1,

DFSDM1_CKOUT, FMC_D6,

SAI1_FS_B, EVENTOUT

- 41 PE10 I/O FT -

TIM1_CH2N,

DFSDM1_DATIN4,

TSC_G5_IO1, FMC_D7,

QUADSPI_CLK,

SAI1_MCLK_B, EVENTOUT

- 42 PE11 I/O FT -

TIM1_CH2, DFSDM1_CKIN4,

TSC_G5_IO2,

QUADSPI_NCS, FMC_D8,

EVENTOUT

- 43 PE12 I/O FT -

TIM1_CH3N, SPI1_NSS,

DFSDM1_DATIN5,

TSC_G5_IO3,

QUADSPI_BK1_IO0,

FMC_D9, EVENTOUT

- 44 PE13 I/O FT -

TIM1_CH3, SPI1_SCK,

DFSDM1_CKIN5,

TSC_G5_IO4,

QUADSPI_BK1_IO1,

FMC_D10, EVENTOUT

- 45 PE14 I/O FT -

TIM1_CH4, TIM1_BKIN2,

TIM1_BKIN2_COMP2,

SPI1_MISO,

QUADSPI_BK1_IO2,

FMC_D11, EVENTOUT

- 46 PE15 I/O FT -

TIM1_BKIN,

TIM1_BKIN_COMP1,

SPI1_MOSI,

QUADSPI_BK1_IO3,

FMC_D12, EVENTOUT

29 47 PB10 I/O FT_f -

TIM2_CH3, I2C2_SCL,

SPI2_SCK,

DFSDM1_DATIN7,

USART3_TX, LPUART1_RX,

QUADSPI_CLK,

COMP1_OUT, SAI1_SCK_A,

EVENTOUT

30 48 PB11 I/O FT_f -

TIM2_CH4, I2C2_SDA,

DFSDM1_CKIN7,

USART3_RX, LPUART1_TX,

QUADSPI_NCS,

COMP2_OUT, EVENTOUT

Table 16. STM32L475xx pin definitions (continued)

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

Pinouts and pin description STM32L475xx

64/204 DS10969 Rev 5

31 49 VSS S - - - -

32 50 VDD S - - - -

33 51 PB12 I/O FT -

TIM1_BKIN,

TIM1_BKIN_COMP2,

I2C2_SMBA, SPI2_NSS,

DFSDM1_DATIN1,

USART3_CK,

LPUART1_RTS_DE,

TSC_G1_IO1, SWPMI1_IO,

SAI2_FS_A, TIM15_BKIN,

EVENTOUT

34 52 PB13 I/O FT_f -

TIM1_CH1N, I2C2_SCL,

SPI2_SCK, DFSDM1_CKIN1,

USART3_CTS,

LPUART1_CTS,

TSC_G1_IO2, SWPMI1_TX,

SAI2_SCK_A, TIM15_CH1N,

EVENTOUT

35 53 PB14 I/O FT_f -

TIM1_CH2N, TIM8_CH2N,

I2C2_SDA, SPI2_MISO,

DFSDM1_DATIN2,

USART3_RTS_DE,

TSC_G1_IO3, SWPMI1_RX,

SAI2_MCLK_A, TIM15_CH1,

EVENTOUT

36 54 PB15 I/O FT -

RTC_REFIN, TIM1_CH3N,

TIM8_CH3N, SPI2_MOSI,

DFSDM1_CKIN2,

TSC_G1_IO4,

SWPMI1_SUSPEND,

SAI2_SD_A, TIM15_CH2,

EVENTOUT

- 55 PD8 I/O FT - USART3_TX, FMC_D13,

EVENTOUT -

- 56 PD9 I/O FT - USART3_RX, FMC_D14,

SAI2_MCLK_A, EVENTOUT -

- 57 PD10 I/O FT -

USART3_CK, TSC_G6_IO1,

FMC_D15, SAI2_SCK_A,

EVENTOUT

- 58 PD11 I/O FT -

USART3_CTS, TSC_G6_IO2,

FMC_A16, SAI2_SD_A,

LPTIM2_ETR, EVENTOUT

Table 16. STM32L475xx pin definitions (continued)

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

DS10969 Rev 5 65/204

STM32L475xx Pinouts and pin description

- 59 PD12 I/O FT -

TIM4_CH1,

USART3_RTS_DE,

TSC_G6_IO3, FMC_A17,

SAI2_FS_A, LPTIM2_IN1,

EVENTOUT

- 60 PD13 I/O FT -

TIM4_CH2, TSC_G6_IO4,

FMC_A18, LPTIM2_OUT,

EVENTOUT

- 61 PD14 I/O FT - TIM4_CH3, FMC_D0,

EVENTOUT -

- 62 PD15 I/O FT - TIM4_CH4, FMC_D1,

EVENTOUT -

37 63 PC6 I/O FT -

TIM3_CH1, TIM8_CH1,

DFSDM1_CKIN3,

TSC_G4_IO1, SDMMC1_D6,

SAI2_MCLK_A, EVENTOUT

38 64 PC7 I/O FT -

TIM3_CH2, TIM8_CH2,

DFSDM1_DATIN3,

TSC_G4_IO2, SDMMC1_D7,

SAI2_MCLK_B, EVENTOUT

39 65 PC8 I/O FT -

TIM3_CH3, TIM8_CH3,

TSC_G4_IO3, SDMMC1_D0,

EVENTOUT

40 66 PC9 I/O FT -

TIM8_BKIN2, TIM3_CH4,

TIM8_CH4, TSC_G4_IO4,

OTG_FS_NOE, SDMMC1_D1,

SAI2_EXTCLK,

TIM8_BKIN2_COMP1,

EVENTOUT

41 67 PA8 I/O FT -

MCO, TIM1_CH1,

USART1_CK, OTG_FS_SOF,

LPTIM2_OUT, EVENTOUT

42 68 PA9 I/O FT_u - TIM1_CH2, USART1_TX,

TIM15_BKIN, EVENTOUT OTG_FS_VBUS

43 69 PA10 I/O FT_u -

TIM1_CH3, USART1_RX,

OTG_FS_ID, TIM17_BKIN,

EVENTOUT

44 70 PA11 I/O FT_u -

TIM1_CH4, TIM1_BKIN2,

USART1_CTS, CAN1_RX,

OTG_FS_DM,

TIM1_BKIN2_COMP1,

EVENTOUT

Table 16. STM32L475xx pin definitions (continued)

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

Pinouts and pin description STM32L475xx

66/204 DS10969 Rev 5

45 71 PA12 I/O FT_u -

TIM1_ETR,

USART1_RTS_DE, CAN1_TX,

OTG_FS_DP, EVENTOUT

46 72 PA13

(JTMS-SWDIO) I/O FT (3) JTMS-SWDIO, IR_OUT,

OTG_FS_NOE, EVENTOUT -

47 - VSS S - - - -

48 73 VDDUSB S - - - -

-74 VSS S - - - -

-75 VDD S - - - -

49 76 PA14

(JTCK-SWCLK) I/O FT (3) JTCK-SWCLK, EVENTOUT -

50 77 PA15 (JTDI) I/O FT (3)

JTDI, TIM2_CH1, TIM2_ETR,

SPI1_NSS, SPI3_NSS,

UART4_RTS_DE,

TSC_G3_IO1, SAI2_FS_B,

EVENTOUT

51 78 PC10 I/O FT -

SPI3_SCK, USART3_TX,

UART4_TX, TSC_G3_IO2,

SDMMC1_D2, SAI2_SCK_B,

EVENTOUT

52 79 PC11 I/O FT -

SPI3_MISO, USART3_RX,

UART4_RX, TSC_G3_IO3,

SDMMC1_D3, SAI2_MCLK_B,

EVENTOUT

53 80 PC12 I/O FT -

SPI3_MOSI, USART3_CK,

UART5_TX, TSC_G3_IO4,

SDMMC1_CK, SAI2_SD_B,

EVENTOUT

- 81 PD0 I/O FT -

SPI2_NSS,

DFSDM1_DATIN7, CAN1_RX,

FMC_D2, EVENTOUT

- 82 PD1 I/O FT -

SPI2_SCK, DFSDM1_CKIN7,

CAN1_TX, FMC_D3,

EVENTOUT

54 83 PD2 I/O FT -

TIM3_ETR,

USART3_RTS_DE,

UART5_RX, TSC_SYNC,

SDMMC1_CMD, EVENTOUT

Table 16. STM32L475xx pin definitions (continued)

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

DS10969 Rev 5 67/204

STM32L475xx Pinouts and pin description

- 84 PD3 I/O FT -

SPI2_MISO,

DFSDM1_DATIN0,

USART2_CTS, FMC_CLK,

EVENTOUT

- 85 PD4 I/O FT -

SPI2_MOSI, DFSDM1_CKIN0,

USART2_RTS_DE,

FMC_NOE, EVENTOUT

- 86 PD5 I/O FT - USART2_TX, FMC_NWE,

EVENTOUT -

- 87 PD6 I/O FT -

DFSDM1_DATIN1,

USART2_RX, FMC_NWAIT,

SAI1_SD_A, EVENTOUT

- 88 PD7 I/O FT -

DFSDM1_CKIN1,

USART2_CK, FMC_NE1,

EVENTOUT

55 89

PB3

(JTDO-

TRACESWO)

I/O FT_a (3)

JTDO-TRACESWO,

TIM2_CH2, SPI1_SCK,

SPI3_SCK,

USART1_RTS_DE,

SAI1_SCK_B, EVENTOUT

COMP2_INM

56 90 PB4

(NJTRST) I/O FT_a (3)

NJTRST, TIM3_CH1,

SPI1_MISO, SPI3_MISO,

USART1_CTS,

UART5_RTS_DE,

TSC_G2_IO1, SAI1_MCLK_B,

TIM17_BKIN, EVENTOUT

COMP2_INP

57 91 PB5 I/O FT_a -

LPTIM1_IN1, TIM3_CH2,

I2C1_SMBA, SPI1_MOSI,

SPI3_MOSI, USART1_CK,

UART5_CTS, TSC_G2_IO2,

COMP2_OUT, SAI1_SD_B,

TIM16_BKIN, EVENTOUT

58 92 PB6 I/O FT_fa -

LPTIM1_ETR, TIM4_CH1,

TIM8_BKIN2, I2C1_SCL,

DFSDM1_DATIN5,

USART1_TX, TSC_G2_IO3,

TIM8_BKIN2_COMP2,

SAI1_FS_B, TIM16_CH1N,

EVENTOUT

COMP2_INP

Table 16. STM32L475xx pin definitions (continued)

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

Pinouts and pin description STM32L475xx

68/204 DS10969 Rev 5

59 93 PB7 I/O FT_fa -

LPTIM1_IN2, TIM4_CH2,

TIM8_BKIN, I2C1_SDA,

DFSDM1_CKIN5,

USART1_RX, UART4_CTS,

TSC_G2_IO4, FMC_NL,

TIM8_BKIN_COMP1,

TIM17_CH1N, EVENTOUT

COMP2_INM, PVD_IN

60 94 BOOT0 I - - - -

61 95 PB8 I/O FT_f -

TIM4_CH3, I2C1_SCL,

DFSDM1_DATIN6, CAN1_RX,

SDMMC1_D4, SAI1_MCLK_A,

TIM16_CH1, EVENTOUT

62 96 PB9 I/O FT_f -

IR_OUT, TIM4_CH4,

I2C1_SDA, SPI2_NSS,

DFSDM1_CKIN6, CAN1_TX,

SDMMC1_D5, SAI1_FS_A,

TIM17_CH1, EVENTOUT

- 97 PE0 I/O FT - TIM4_ETR, FMC_NBL0,

TIM16_CH1, EVENTOUT -

- 98 PE1 I/O FT - FMC_NBL1, TIM17_CH1,

EVENTOUT -

63 99 VSS S - - - -

64 100 VDD S - - - -

1. PC13, PC14 and PC15 are supplied through the power switch. Since the switch only sinks a limited amount of current

(3 mA), the use of GPIOs PC13 to PC15 in output mode is limited:

- The speed should not exceed 2 MHz with a maximum load of 30 pF

- These GPIOs must not be used as current sources (e.g. to drive an LED).

2. After a Backup domain power-up, PC13, PC14 and PC15 operate as GPIOs. Their function then depends on the content of

the RTC registers which are not reset by the system reset. For details on how to manage these GPIOs, refer to the Backup

domain and RTC register descriptions in the RM0351 reference manual.

3. After reset, these pins are configured as JTAG/SW debug alternate functions, and the internal pull-up on PA15, PA13, PB4

pins and the internal pull-down on PA14 pin are activated.

Table 16. STM32L475xx pin definitions (continued)

Number Pin name

(function after

reset)

Pin type

I/O structure

Notes

Pin functions

LQFP64

LQFP100

Alternate functions Additional functions

STM32L475xx Pinouts and pin description

DS10969 Rev 5 69/204

Table 17. Alternate function AF0 to AF7(1)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SYS_AF

TIM1/TIM2/

TIM5/TIM8/

LPTIM1

TIM1/TIM2/

TIM3/TIM4/

TIM5

TIM8 I2C1/I2C2/I2C3 SPI1/SPI2 SPI3/DFSDM

USART1/

USART2/

USART3

Port A

PA0 - TIM2_CH1 TIM5_CH1 TIM8_ETR - - - USART2_CTS

PA1 - TIM2_CH2 TIM5_CH2 - - - - USART2_RTS_

PA2 - TIM2_CH3 TIM5_CH3 - - - - USART2_TX

PA3 - TIM2_CH4 TIM5_CH4 - - - - USART2_RX

PA4-----SPI1_NSSSPI3_NSSUSART2_CK

PA5 - TIM2_CH1 TIM2_ETR TIM8_CH1N - SPI1_SCK - -

PA6 - TIM1_BKIN TIM3_CH1 TIM8_BKIN - SPI1_MISO - USART3_CTS

PA7 - TIM1_CH1N TIM3_CH2 TIM8_CH1N - SPI1_MOSI - -

PA8MCOTIM1_CH1---- -USART1_CK

PA9-TIM1_CH2---- -USART1_TX

PA10-TIM1_CH3---- -USART1_RX

PA11 - TIM1_CH4 TIM1_BKIN2 - - - - USART1_CTS

PA12-TIM1_ETR---- -

USART1_RTS_

PA13 JTMS-SWDIO IR_OUT - - - - - -

PA14JTCK-SWCLK----- - -

PA15 JTDI TIM2_CH1 TIM2_ETR - - SPI1_NSS SPI3_NSS -

Pinouts and pin description STM32L475xx

70/204 DS10969 Rev 5

Port B

PB0 - TIM1_CH2N TIM3_CH3 TIM8_CH2N - - - USART3_CK

PB1 - TIM1_CH3N TIM3_CH4 TIM8_CH3N - - DFSDM1_

DATIN0

USART3_RTS_

PB2 RTC_OUT LPTIM1_OUT - - I2C3_SMBA - DFSDM1_CKIN0 -

PB3 JTDO-

TRACESWO TIM2_CH2 - - - SPI1_SCK SPI3_SCK USART1_RTS_

PB4 NJTRST - TIM3_CH1 - - SPI1_MISO SPI3_MISO USART1_CTS

PB5 - LPTIM1_IN1 TIM3_CH2 - I2C1_SMBA SPI1_MOSI SPI3_MOSI USART1_CK

PB6 - LPTIM1_ETR TIM4_CH1 TIM8_BKIN2 I2C1_SCL - DFSDM1_

DATIN5 USART1_TX

PB7 - LPTIM1_IN2 TIM4_CH2 TIM8_BKIN I2C1_SDA - DFSDM1_CKIN5 USART1_RX

PB8 - - TIM4_CH3 - I2C1_SCL - DFSDM1_

DATIN6 -

PB9 - IR_OUT TIM4_CH4 - I2C1_SDA SPI2_NSS DFSDM1_CKIN6 -

PB10 - TIM2_CH3 - - I2C2_SCL SPI2_SCK DFSDM1_

DATIN7 USART3_TX

PB11 - TIM2_CH4 - - I2C2_SDA - DFSDM1_CKIN7 USART3_RX

PB12 - TIM1_BKIN - TIM1_BKIN_

COMP2 I2C2_SMBA SPI2_NSS DFSDM1_

DATIN1 USART3_CK

PB13 - TIM1_CH1N - - I2C2_SCL SPI2_SCK DFSDM1_CKIN1 USART3_CTS

PB14 - TIM1_CH2N - TIM8_CH2N I2C2_SDA SPI2_MISO DFSDM1_

DATIN2

USART3_RTS_

PB15 RTC_REFIN TIM1_CH3N - TIM8_CH3N - SPI2_MOSI DFSDM1_CKIN2 -

Table 17. Alternate function AF0 to AF7(1) (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SYS_AF

TIM1/TIM2/

TIM5/TIM8/

LPTIM1

TIM1/TIM2/

TIM3/TIM4/

TIM5

TIM8 I2C1/I2C2/I2C3 SPI1/SPI2 SPI3/DFSDM

USART1/

USART2/

USART3

STM32L475xx Pinouts and pin description

DS10969 Rev 5 71/204

Port C

PC0 - LPTIM1_IN1 - - I2C3_SCL - DFSDM1_

DATIN4 -

PC1 - LPTIM1_OUT - - I2C3_SDA - DFSDM1_CKIN4 -

PC2 - LPTIM1_IN2 - - - SPI2_MISO DFSDM1_

CKOUT -

PC3 - LPTIM1_ETR - - - SPI2_MOSI - -

PC4------ -USART3_TX

PC5------ -USART3_RX

PC6 - - TIM3_CH1 TIM8_CH1 - - DFSDM1_CKIN3 -

PC7 - - TIM3_CH2 TIM8_CH2 - - DFSDM1_

DATIN3 -

PC8 - - TIM3_CH3 TIM8_CH3 - - - -

PC9 - TIM8_BKIN2 TIM3_CH4 TIM8_CH4 - - - -

PC10------SPI3_SCKUSART3_TX

PC11------SPI3_MISOUSART3_RX

PC12------SPI3_MOSIUSART3_CK

PC13------ - -

PC14------ - -

PC15------ - -

Table 17. Alternate function AF0 to AF7(1) (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SYS_AF

TIM1/TIM2/

TIM5/TIM8/

LPTIM1

TIM1/TIM2/

TIM3/TIM4/

TIM5

TIM8 I2C1/I2C2/I2C3 SPI1/SPI2 SPI3/DFSDM

USART1/

USART2/

USART3

Pinouts and pin description STM32L475xx

72/204 DS10969 Rev 5

Port D

PD0-----SPI2_NSS

DFSDM1_

DATIN7 -

PD1-----SPI2_SCKDFSDM1_CKIN7-

PD2 - - TIM3_ETR - - - - USART3_RTS_

PD3-----SPI2_MISO

DFSDM1_

DATIN0 USART2_CTS

PD4-----SPI2_MOSIDFSDM1_CKIN0

USART2_RTS_

PD5------ -USART2_TX

PD6------

DFSDM1_

DATIN1 USART2_RX

PD7------DFSDM1_CKIN1USART2_CK

PD8------ -USART3_TX

PD9------ -USART3_RX

PD10------ -USART3_CK

PD11------ -USART3_CTS

PD12 - - TIM4_CH1 - - - - USART3_RTS_

PD13 - - TIM4_CH2 - - - - -

PD14 - - TIM4_CH3 - - - - -

PD15 - - TIM4_CH4 - - - - -

Table 17. Alternate function AF0 to AF7(1) (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SYS_AF

TIM1/TIM2/

TIM5/TIM8/

LPTIM1

TIM1/TIM2/

TIM3/TIM4/

TIM5

TIM8 I2C1/I2C2/I2C3 SPI1/SPI2 SPI3/DFSDM

USART1/

USART2/

USART3

STM32L475xx Pinouts and pin description

DS10969 Rev 5 73/204

Port E

PE0--TIM4_ETR--- - -

PE1------ - -

PE2 TRACECK - TIM3_ETR - - - - -

PE3 TRACED0 - TIM3_CH1 - - - - -

PE4 TRACED1 - TIM3_CH2 - - - DFSDM1_

DATIN3 -

PE5 TRACED2 - TIM3_CH3 - - - DFSDM1_CKIN3 -

PE6 TRACED3 - TIM3_CH4 - - - - -

PE7-TIM1_ETR----

DFSDM1_

DATIN2 -

PE8-TIM1_CH1N----DFSDM1_CKIN2-

PE9-TIM1_CH1----

DFSDM1_

CKOUT -

PE10-TIM1_CH2N----

DFSDM1_

DATIN4 -

PE11-TIM1_CH2----DFSDM1_CKIN4-

PE12 - TIM1_CH3N - - - SPI1_NSS DFSDM1_

DATIN5 -

PE13 - TIM1_CH3 - - - SPI1_SCK DFSDM1_CKIN5 -

PE14 - TIM1_CH4 TIM1_BKIN2 TIM1_BKIN2_

COMP2 - SPI1_MISO - -

PE15 - TIM1_BKIN - TIM1_BKIN_

COMP1 - SPI1_MOSI - -

Table 17. Alternate function AF0 to AF7(1) (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SYS_AF

TIM1/TIM2/

TIM5/TIM8/

LPTIM1

TIM1/TIM2/

TIM3/TIM4/

TIM5

TIM8 I2C1/I2C2/I2C3 SPI1/SPI2 SPI3/DFSDM

USART1/

USART2/

USART3

Pinouts and pin description STM32L475xx

74/204 DS10969 Rev 5

Port H

PH0------ - -

PH1------ - -

1. Please refer to Table 18 for AF8 to AF15.

Table 17. Alternate function AF0 to AF7(1) (continued)

Port

AF0 AF1 AF2 AF3 AF4 AF5 AF6 AF7

SYS_AF

TIM1/TIM2/

TIM5/TIM8/

LPTIM1

TIM1/TIM2/

TIM3/TIM4/

TIM5

TIM8 I2C1/I2C2/I2C3 SPI1/SPI2 SPI3/DFSDM

USART1/

USART2/

USART3

STM32L475xx Pinouts and pin description

DS10969 Rev 5 75/204

Table 18. Alternate function AF8 to AF15(1)

Port

AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

UART4,

UART5,

LPUART1

CAN1, TSC OTG_FS, QUADSPI -

SDMMC1, COMP1,

COMP2, FMC,

SWPMI1

SAI1, SAI2

TIM2, TIM15,

TIM16, TIM17,

LPTIM2

EVENTOUT

Port A

PA0 UART4_TX - - - - SAI1_EXTCLK TIM2_ETR EVENTOUT

PA1 UART4_RX - - - - - TIM15_CH1N EVENTOUT

PA2 - - - - - SAI2_EXTCLK TIM15_CH1 EVENTOUT

PA3 - - - - - - TIM15_CH2 EVENTOUT

PA4 - - - - - SAI1_FS_B LPTIM2_OUT EVENTOUT

PA5 - - - - - - LPTIM2_ETR EVENTOUT

PA6 - - QUADSPI_BK1_IO3 - TIM1_BKIN_

COMP2

TIM8_BKIN_

COMP2 TIM16_CH1 EVENTOUT

PA7 - - QUADSPI_BK1_IO2 - - - TIM17_CH1 EVENTOUT

PA8 - - OTG_FS_SOF - - - LPTIM2_OUT EVENTOUT

PA9 - - - - - - TIM15_BKIN EVENTOUT

PA10 - - OTG_FS_ID - - - TIM17_BKIN EVENTOUT

PA11 - CAN1_RX OTG_FS_DM - TIM1_BKIN2_

COMP1 - - EVENTOUT

PA12 - CAN1_TX OTG_FS_DP - - - - EVENTOUT

PA13 - - OTG_FS_NOE - - - - EVENTOUT

PA14 - - - - - - - EVENTOUT

PA15 UART4_RTS

_DE TSC_G3_IO1 - - - SAI2_FS_B - EVENTOUT

Pinouts and pin description STM32L475xx

76/204 DS10969 Rev 5

Port B

PB0 - - QUADSPI_BK1_IO1 - COMP1_OUT - - EVENTOUT

PB1 - - QUADSPI_BK1_IO0 - - - LPTIM2_IN1 EVENTOUT

PB2 - - - - - - - EVENTOUT

PB3 - - - - - SAI1_SCK_B - EVENTOUT

PB4 UART5_RTS

_DE TSC_G2_IO1 - - - SAI1_MCLK_

BTIM17_BKIN EVENTOUT

PB5 UART5_CTS TSC_G2_IO2 - - COMP2_OUT SAI1_SD_B TIM16_BKIN EVENTOUT

PB6 - TSC_G2_IO3 - - TIM8_BKIN2_

COMP2 SAI1_FS_B TIM16_CH1N EVENTOUT

PB7 UART4_CTS TSC_G2_IO4 - - FMC_NL TIM8_BKIN_

COMP1 TIM17_CH1N EVENTOUT

PB8 - CAN1_RX - - SDMMC1_D4 SAI1_MCLK_

ATIM16_CH1 EVENTOUT

PB9 - CAN1_TX - - SDMMC1_D5 SAI1_FS_A TIM17_CH1 EVENTOUT

PB10 LPUART1_

RX - QUADSPI_CLK - COMP1_OUT SAI1_SCK_A - EVENTOUT

PB11 LPUART1_TX - QUADSPI_NCS - COMP2_OUT - - EVENTOUT

PB12 LPUART1_

RTS_DE TSC_G1_IO1 - - SWPMI1_IO SAI2_FS_A TIM15_BKIN EVENTOUT

PB13 LPUART1_

CTS TSC_G1_IO2 - - SWPMI1_TX SAI2_SCK_A TIM15_CH1N EVENTOUT

PB14 - TSC_G1_IO3 - - SWPMI1_RX SAI2_MCLK_

ATIM15_CH1 EVENTOUT

PB15 - TSC_G1_IO4 - - SWPMI1_SUSPEND SAI2_SD_A TIM15_CH2 EVENTOUT

Table 18. Alternate function AF8 to AF15(1) (continued)

Port

AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

UART4,

UART5,

LPUART1

CAN1, TSC OTG_FS, QUADSPI -

SDMMC1, COMP1,

COMP2, FMC,

SWPMI1

SAI1, SAI2

TIM2, TIM15,

TIM16, TIM17,

LPTIM2

EVENTOUT

STM32L475xx Pinouts and pin description

DS10969 Rev 5 77/204

Port C

PC0 LPUART1_

RX - - - - - LPTIM2_IN1 EVENTOUT

PC1 LPUART1_TX - - - - - - EVENTOUT

PC2 - - - - - - - EVENTOUT

PC3 - - - - - SAI1_SD_A LPTIM2_ETR EVENTOUT

PC4 - - - - - - - EVENTOUT

PC5 - - - - - - - EVENTOUT

PC6 - TSC_G4_IO1 - - SDMMC1_D6 SAI2_MCLK_

A- EVENTOUT

PC7 - TSC_G4_IO2 - - SDMMC1_D7 SAI2_MCLK_

B- EVENTOUT

PC8 - TSC_G4_IO3 - - SDMMC1_D0 - - EVENTOUT

PC9 - TSC_G4_IO4 OTG_FS_NOE - SDMMC1_D1 SAI2_EXTCLK TIM8_BKIN2_

COMP1 EVENTOUT

PC10 UART4_TX TSC_G3_IO2 - - SDMMC1_D2 SAI2_SCK_B - EVENTOUT

PC11 UART4_RX TSC_G3_IO3 - - SDMMC1_D3 SAI2_MCLK_

B- EVENTOUT

PC12 UART5_TX TSC_G3_IO4 - - SDMMC1_CK SAI2_SD_B - EVENTOUT

PC13 - - - - - - - EVENTOUT

PC14 - - - - - - - EVENTOUT

PC15 - - - - - - - EVENTOUT

Table 18. Alternate function AF8 to AF15(1) (continued)

Port

AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

UART4,

UART5,

LPUART1

CAN1, TSC OTG_FS, QUADSPI -

SDMMC1, COMP1,

COMP2, FMC,

SWPMI1

SAI1, SAI2

TIM2, TIM15,

TIM16, TIM17,

LPTIM2

EVENTOUT

Pinouts and pin description STM32L475xx

78/204 DS10969 Rev 5

Port D

PD0 - CAN1_RX - - FMC_D2 - - EVENTOUT

PD1 - CAN1_TX - - FMC_D3 - - EVENTOUT

PD2 UART5_RX TSC_SYNC - - SDMMC1_CMD - - EVENTOUT

PD3 - - - - FMC_CLK - - EVENTOUT

PD4 - - - - FMC_NOE - - EVENTOUT

PD5 - - - - FMC_NWE - - EVENTOUT

PD6 - - - - FMC_NWAIT SAI1_SD_A - EVENTOUT

PD7 - - - - FMC_NE1 - - EVENTOUT

PD8 - - - - FMC_D13 - - EVENTOUT

PD9 - - - - FMC_D14 SAI2_MCLK_

A- EVENTOUT

PD10 - TSC_G6_IO1 - - FMC_D15 SAI2_SCK_A - EVENTOUT

PD11 - TSC_G6_IO2 - - FMC_A16 SAI2_SD_A LPTIM2_ETR EVENTOUT

PD12 - TSC_G6_IO3 - - FMC_A17 SAI2_FS_A LPTIM2_IN1 EVENTOUT

PD13 - TSC_G6_IO4 - - FMC_A18 - LPTIM2_OUT EVENTOUT

PD14 - - - - FMC_D0 - - EVENTOUT

PD15 - - - - FMC_D1 - - EVENTOUT

Table 18. Alternate function AF8 to AF15(1) (continued)

Port

AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

UART4,

UART5,

LPUART1

CAN1, TSC OTG_FS, QUADSPI -

SDMMC1, COMP1,

COMP2, FMC,

SWPMI1

SAI1, SAI2

TIM2, TIM15,

TIM16, TIM17,

LPTIM2

EVENTOUT

STM32L475xx Pinouts and pin description

DS10969 Rev 5 79/204

Port E

PE0 - - - - FMC_NBL0 - TIM16_CH1 EVENTOUT

PE1 - - - - FMC_NBL1 - TIM17_CH1 EVENTOUT

PE2 - TSC_G7_IO1 - - FMC_A23 SAI1_MCLK_

A- EVENTOUT

PE3 - TSC_G7_IO2 - - FMC_A19 SAI1_SD_B - EVENTOUT

PE4 - TSC_G7_IO3 - - FMC_A20 SAI1_FS_A - EVENTOUT

PE5 - TSC_G7_IO4 - - FMC_A21 SAI1_SCK_A - EVENTOUT

PE6 - - - - FMC_A22 SAI1_SD_A - EVENTOUT

PE7 - - - - FMC_D4 SAI1_SD_B - EVENTOUT

PE8 - - - - FMC_D5 SAI1_SCK_B - EVENTOUT

PE9 - - - - FMC_D6 SAI1_FS_B - EVENTOUT

PE10 - TSC_G5_IO1 QUADSPI_CLK - FMC_D7 SAI1_MCLK_

B- EVENTOUT

PE11 - TSC_G5_IO2 QUADSPI_NCS - FMC_D8 - - EVENTOUT

PE12 - TSC_G5_IO3 QUADSPI_BK1_IO0 - FMC_D9 - - EVENTOUT

PE13 - TSC_G5_IO4 QUADSPI_BK1_IO1 - FMC_D10 - - EVENTOUT

PE14 - - QUADSPI_BK1_IO2 - FMC_D11 - - EVENTOUT

PE15 - - QUADSPI_BK1_IO3 - FMC_D12 - - EVENTOUT

Port H

PH0 - - - - - - - EVENTOUT

PH1 - - - - - - - EVENTOUT

1. Please refer to Table 17 for AF0 to AF7.

Table 18. Alternate function AF8 to AF15(1) (continued)

Port

AF8 AF9 AF10 AF11 AF12 AF13 AF14 AF15

UART4,

UART5,

LPUART1

CAN1, TSC OTG_FS, QUADSPI -

SDMMC1, COMP1,

COMP2, FMC,

SWPMI1

SAI1, SAI2

TIM2, TIM15,

TIM16, TIM17,

LPTIM2

EVENTOUT

Memory mapping STM32L475xx

80/204 DS10969 Rev 5

5 Memory mapping

Figure 8. STM32L475xx memory map

MS34100V3

0xFFFF FFFF

0xE000 0000

0xC000 0000

0xA000 0000

0x8000 0000

0x6000 0000

0x4000 0000

0x2000 0000

0x0000 0000

Cortex™-M4

with FPU

Internal

Peripherals

SRAM1

CODE

OTP area

System memory

Flash memory

Flash, system memory

or SRAM, depending on

BOOT configuration

AHB2

AHB1

APB2

APB1

0x5006 0C00

0x4800 0000

0x4002 4400

0x4002 0000

0x4001 6400

0x4001 0000

0x4000 9800

0x4000 0000

0x1FFF FFFF

0x1FFF F810

0x1FFF 0000

0x0810 0000

0x0800 0000

0x0010 0000

0x0000 0000

Reserved

0x1000 8000

0x1000 0000

SRAM2

FMC and

QUADSPI

registers

FMC bank 3

FMC bank 1 &

bank 2

Option Bytes

System memory

Options Bytes

0x1FFF F800

0x1FFF 7000

0x1FFF 7400

0x1FFF 7800

0x1FFF 7810

0x1FFF 8000

0x1FFF F000

Reserved

QUADSPI registers

FMC registers

0xBFFF FFFF

0xA000 1400

0xA000 1000

0xA000 0000

Reserved

0x5FFF FFFF

0x9000 0000

QUADSPI Flash

bank

DS10969 Rev 5 81/204

STM32L475xx Memory mapping

Table 19. STM32L475xx memory map and peripheral register boundary addresses(1)

Bus Boundary address Size

(bytes) Peripheral

AHB3

0xA000 1000 - 0xA000 13FF 1 KB QUADSPI

0xA000 0000 - 0xA000 0FFF 4 KB FMC

AHB2

0x5006 0800 - 0x5006 0BFF 1 KB RNG

0x5004 0400 - 0x5006 07FF 129 KB Reserved

0x5004 0000 - 0x5004 03FF 1 KB ADC

0x5000 0000 - 0x5003 FFFF 16 KB OTG_FS

0x4800 2000 - 0x4FFF FFFF ~127 MB Reserved

0x4800 1C00 - 0x4800 1FFF 1 KB GPIOH

0x4800 1800 - 0x4800 1BFF 1 KB GPIOG

0x4800 1400 - 0x4800 17FF 1 KB GPIOF

0x4800 1000 - 0x4800 13FF 1 KB GPIOE

0x4800 0C00 - 0x4800 0FFF 1 KB GPIOD

0x4800 0800 - 0x4800 0BFF 1 KB GPIOC

0x4800 0400 - 0x4800 07FF 1 KB GPIOB

0x4800 0000 - 0x4800 03FF 1 KB GPIOA

-0x4002 4400 - 0x47FF FFFF ~127 MB Reserved

AHB1

0x4002 4000 - 0x4002 43FF 1 KB TSC

0x4002 3400 - 0x4002 3FFF 1 KB Reserved

0x4002 3000 - 0x4002 33FF 1 KB CRC

0x4002 2400 - 0x4002 2FFF 3 KB Reserved

0x4002 2000 - 0x4002 23FF 1 KB FLASH registers

0x4002 1400 - 0x4002 1FFF 3 KB Reserved

0x4002 1000 - 0x4002 13FF 1 KB RCC

0x4002 0800 - 0x4002 0FFF 2 KB Reserved

0x4002 0400 - 0x4002 07FF 1 KB DMA2

0x4002 0000 - 0x4002 03FF 1 KB DMA1

Memory mapping STM32L475xx

82/204 DS10969 Rev 5

APB2

0x4001 6400 - 0x4001 FFFF 39 KB Reserved

0x4001 6000 - 0x4000 63FF 1 KB DFSDM1

0x4001 5C00 - 0x4000 5FFF 1 KB Reserved

0x4001 5800 - 0x4000 5BFF 1 KB SAI2

0x4001 5400 - 0x4000 57FF 1 KB SAI1

0x4001 4C00 - 0x4000 53FF 2 KB Reserved

0x4001 4800 - 0x4001 4BFF 1 KB TIM17

0x4001 4400 - 0x4001 47FF 1 KB TIM16

0x4001 4000 - 0x4001 43FF 1 KB TIM15

APB2

0x4001 3C00 - 0x4001 3FFF 1 KB Reserved

0x4001 3800 - 0x4001 3BFF 1 KB USART1

0x4001 3400 - 0x4001 37FF 1 KB TIM8

0x4001 3000 - 0x4001 33FF 1 KB SPI1

0x4001 2C00 - 0x4001 2FFF 1 KB TIM1

0x4001 2800 - 0x4001 2BFF 1 KB SDMMC1

0x4001 2000 - 0x4001 27FF 2 KB Reserved

0x4001 1C00 - 0x4001 1FFF 1 KB FIREWALL

0x4001 0800- 0x4001 1BFF 5 KB Reserved

0x4001 0400 - 0x4001 07FF 1 KB EXTI

0x4001 0200 - 0x4001 03FF

1 KB

COMP

0x4001 0030 - 0x4001 01FF VREFBUF

0x4001 0000 - 0x4001 002F SYSCFG

Table 19. STM32L475xx memory map and peripheral register boundary addresses(1)

(continued)

Bus Boundary address Size

(bytes) Peripheral

DS10969 Rev 5 83/204

STM32L475xx Memory mapping

APB1

0x4000 9800 - 0x4000 FFFF 26 KB Reserved

0x4000 9400 - 0x4000 97FF 1 KB LPTIM2

0x4000 8C00 - 0x4000 93FF 2 KB Reserved

0x4000 8800 - 0x4000 8BFF 1 KB SWPMI1

0x4000 8400 - 0x4000 87FF 1 KB Reserved

0x4000 8000 - 0x4000 83FF 1 KB LPUART1

0x4000 7C00 - 0x4000 7FFF 1 KB LPTIM1

0x4000 7800 - 0x4000 7BFF 1 KB OPAMP

0x4000 7400 - 0x4000 77FF 1 KB DAC1

0x4000 7000 - 0x4000 73FF 1 KB PWR

0x4000 6800 - 0x4000 6FFF 1 KB Reserved

0x4000 6400 - 0x4000 67FF 1 KB CAN1

0x4000 6000 - 0x4000 63FF 1 KB Reserved

0x4000 5C00- 0x4000 5FFF 1 KB I2C3

0x4000 5800 - 0x4000 5BFF 1 KB I2C2

0x4000 5400 - 0x4000 57FF 1 KB I2C1

0x4000 5000 - 0x4000 53FF 1 KB UART5

0x4000 4C00 - 0x4000 4FFF 1 KB UART4

0x4000 4800 - 0x4000 4BFF 1 KB USART3

0x4000 4400 - 0x4000 47FF 1 KB USART2

Table 19. STM32L475xx memory map and peripheral register boundary addresses(1)

(continued)

Bus Boundary address Size

(bytes) Peripheral

Memory mapping STM32L475xx

84/204 DS10969 Rev 5

APB1

0x4000 4000 - 0x4000 43FF 1 KB Reserved

0x4000 3C00 - 0x4000 3FFF 1 KB SPI3

0x4000 3800 - 0x4000 3BFF 1 KB SPI2

0x4000 3400 - 0x4000 37FF 1 KB Reserved

0x4000 3000 - 0x4000 33FF 1 KB IWDG

0x4000 2C00 - 0x4000 2FFF 1 KB WWDG

0x4000 2800 - 0x4000 2BFF 1 KB RTC

0x4000 1800 - 0x4000 27FF 4 KB Reserved

0x4000 1400 - 0x4000 17FF 1 KB TIM7

0x4000 1000 - 0x4000 13FF 1 KB TIM6

0x4000 0C00- 0x4000 0FFF 1 KB TIM5

0x4000 0800 - 0x4000 0BFF 1 KB TIM4

0x4000 0400 - 0x4000 07FF 1 KB TIM3

0x4000 0000 - 0x4000 03FF 1 KB TIM2

1. The gray color is used for reserved boundary addresses.

Table 19. STM32L475xx memory map and peripheral register boundary addresses(1)

(continued)

Bus Boundary address Size

(bytes) Peripheral

DS10969 Rev 5 85/204

STM32L475xx Electrical characteristics

190

6 Electrical characteristics

6.1 Parameter conditions

Unless otherwise specified, all voltages are referenced to VSS.

6.1.1 Minimum and maximum values

Unless otherwise specified, the minimum and maximum values are guaranteed in the worst

conditions of ambient temperature, supply voltage and frequencies by tests in production on

100% of the devices with an ambient temperature at TA = 25 °C and TA = TAmax (given by

the selected temperature range).

Data based on characterization results, design simulation and/or technology characteristics

are indicated in the table footnotes and are not tested in production. Based on

characterization, the minimum and maximum values refer to sample tests and represent the

mean value plus or minus three times the standard deviation (mean ±3).

6.1.2 Typical values

Unless otherwise specified, typical data are based on TA = 25 °C, VDD = VDDA = 3 V. They

are given only as design guidelines and are not tested.

Typical ADC accuracy values are determined by characterization of a batch of samples from

a standard diffusion lot over the full temperature range, where 95% of the devices have an

error less than or equal to the value indicated (mean ±2).

6.1.3 Typical curves

Unless otherwise specified, all typical curves are given only as design guidelines and are

not tested.

6.1.4 Loading capacitor

The loading conditions used for pin parameter measurement are shown in Figure 9.

6.1.5 Pin input voltage

The input voltage measurement on a pin of the device is described in Figure 10.

Figure 9. Pin loading conditions Figure 10. Pin input voltage

MS19210V1

MCU pin

C = 50 pF

MS19211V1

MCU pin

Electrical characteristics STM32L475xx

86/204 DS10969 Rev 5

6.1.6 Power supply scheme

Figure 11. Power supply scheme

Caution: Each power supply pair (VDD/VSS, VDDA/VSSA etc.) must be decoupled with filtering ceramic

capacitors as shown above. These capacitors must be placed as close as possible to, or

below, the appropriate pins on the underside of the PCB to ensure the good functionality of

the device.

MSv40913V1

ADCs/

DACs/

OPAMPs/

COMPs/

VREFBUF

VREF+

VREF-

VDDA

10 nF

+1 μF

VDDA

VSSA

VREF

100 nF +1 μF

VDD

Level shifter

logic

Kernel logic

(CPU, Digital

& Memories)

Backup circuitry

(LSE, RTC,

Backup registers)

OUT

Regulator

GPIOs

1.55 – 3.6 V

n x 100 nF

+1 x 4.7 μF

n x VSS

n x VDD

VBAT

VCORE

Power switch

VDDIO1

DS10969 Rev 5 87/204

STM32L475xx Electrical characteristics

190

6.1.7 Current consumption measurement

Figure 12. Current consumption measurement scheme

6.2 Absolute maximum ratings

Stresses above the absolute maximum ratings listed in Table 20: Voltage characteristics,

Table 21: Current characteristics and Table 22: Thermal characteristics may cause

permanent damage to the device. These are stress ratings only and functional operation of

the device at these conditions is not implied. Exposure to maximum rating conditions for

extended periods may affect device reliability. Device mission profile (application conditions)

is compliant with JEDEC JESD47 qualification standard, extended mission profiles are

available on demand.

MSv40912V1

IDD_USB

VDDUSB

IDD_VBAT

VBAT

IDD

VDD

IDDA

VDDA

Table 20. Voltage characteristics(1)

Symbol Ratings Min Max Unit

VDDX - VSS

External main supply voltage (including

VDD, VDDA, VDDUSB, VBAT)-0.3 4.0 V

VIN(2)

Input voltage on FT_xxx pins VSS-0.3 min (VDD, VDDA, VDDUSB)

+ 4.0(3)(4)

Input voltage on TT_xx pins VSS-0.3 4.0

Input voltage on BOOT0 pin VSS 9.0

Input voltage on any other pins VSS-0.3 4.0

Electrical characteristics STM32L475xx

88/204 DS10969 Rev 5

|VDDx|Variations between different VDDX power

pins of the same domain -50mV

|VSSx-VSS|Variations between all the different ground

pins(5) -50mV

1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power

supply, in the permitted range.

2. VIN maximum must always be respected. Refer to Table 21: Current characteristics for the maximum allowed injected

current values.

3. This formula has to be applied only on the power supplies related to the IO structure described in the pin definition table.

4. To sustain a voltage higher than 4 V the internal pull-up/pull-down resistors must be disabled.

5. Include VREF- pin.

Table 20. Voltage characteristics(1) (continued)

Symbol Ratings Min Max Unit

Table 21. Current characteristics

Symbol Ratings Max Unit

IVDD Total current into sum of all VDD power lines (source)(1) 150

IVSS Total current out of sum of all VSS ground lines (sink)(1) 150

IVDD(PIN) Maximum current into each VDD power pin (source)(1) 100

IVSS(PIN) Maximum current out of each VSS ground pin (sink)(1) 100

IIO(PIN)

Output current sunk by any I/O and control pin except FT_f 20

Output current sunk by any FT_f pin 20

Output current sourced by any I/O and control pin 20

IIO(PIN)

Total output current sunk by sum of all I/Os and control pins(2) 100

Total output current sourced by sum of all I/Os and control pins(2) 100

IINJ(PIN)(3)

Injected current on FT_xxx, TT_xx, RST and B pins, except PA4,

PA5 -5/+0(4)

Injected current on PA4, PA5 -5/0

|IINJ(PIN)| Total injected current (sum of all I/Os and control pins)(5) 25

1. All main power (VDD, VDDA, VDDUSB, VBAT) and ground (VSS, VSSA) pins must always be connected to the external power

supplies, in the permitted range.

2. This current consumption must be correctly distributed over all I/Os and control pins. The total output current must not be

sunk/sourced between two consecutive power supply pins referring to high pin count QFP packages.

3. Positive injection (when VIN > VDDIOx) is not possible on these I/Os and does not occur for input voltages lower than the

specified maximum value.

4. A negative injection is induced by VIN < VSS. IINJ(PIN) must never be exceeded. Refer also to Table 20: Voltage

characteristics for the minimum allowed input voltage values.

5. When several inputs are submitted to a current injection, the maximum |IINJ(PIN)| is the absolute sum of the negative

injected currents (instantaneous values).

DS10969 Rev 5 89/204

STM32L475xx Electrical characteristics

190

Table 22. Thermal characteristics

Symbol Ratings Value Unit

TSTG Storage temperature range –65 to +150 °C

TJMaximum junction temperature 150 °C

Electrical characteristics STM32L475xx

90/204 DS10969 Rev 5

6.3 Operating conditions

6.3.1 General operating conditions

Table 23. General operating conditions

Symbol Parameter Conditions Min Max Unit

fHCLK Internal AHB clock frequency - 0 80

MHzfPCLK1 Internal APB1 clock frequency - 0 80

fPCLK2 Internal APB2 clock frequency - 0 80

VDD Standard operating voltage - 1.71

(1) 3.6 V

VDDA Analog supply voltage

ADC or COMP used 1.62

3.6 V

DAC or OPAMP used 1.8

VREFBUF used 2.4

ADC, DAC, OPAMP, COMP,

VREFBUF not used 0

VBAT Backup operating voltage - 1.55 3.6 V

VDDUSB USB supply voltage

USB used 3.0 3.6

USB not used 0 3.6

VIN I/O input voltage

TT_xx I/O -0.3 VDDIOx+0.3

BOOT0 0 9

All I/O except BOOT0 and TT_xx -0.3

Min(Min(VDD, VDDA,

VDDUSB)+3.6 V,

5.5 V)(2)(3)

Power dissipation at

TA = 85 °C for suffix 6

TA = 105 °C for suffix 7(4)

LQFP100 - - 476

LQFP64 - - 444

Ambient temperature for the

suffix 6 version

Maximum power dissipation –40 85

°C

Low-power dissipation(5) –40 105

Ambient temperature for the

suffix 7 version

Maximum power dissipation –40 105

Low-power dissipation(5) –40 125

Ambient temperature for the

suffix 3 version

Maximum power dissipation –40 125

Low-power dissipation(5) –40 130

TJ Junction temperature range

Suffix 6 version –40 105

°CSuffix 7 version –40 125

Suffix 3 version –40 130

1. When RESET is released functionality is guaranteed down to VBOR0 Min.

2. This formula has to be applied only on the power supplies related to the IO structure described by the pin definition table.

Maximum I/O input voltage is the smallest value between Min(VDD, VDDA, VDDUSB)+3.6 V and 5.5V.

3. For operation with voltage higher than Min (VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must

be disabled.

DS10969 Rev 5 91/204

STM32L475xx Electrical characteristics

190

6.3.2 Operating conditions at power-up / power-down

The parameters given in Table 24 are derived from tests performed under the ambient

temperature condition summarized in Table 23.

The requirements for power-up/down sequence specified in Section 3.9.1: Power supply

schemes must be respected.

6.3.3 Embedded reset and power control block characteristics

The parameters given in Table 25 are derived from tests performed under the ambient

temperature conditions summarized in Table 23: General operating conditions.

4. If TA is lower, higher PD values are allowed as long as TJ does not exceed TJmax (see Section 7.3: Thermal characteristics).

5. In low-power dissipation state, TA can be extended to this range as long as TJ does not exceed TJmax (see Section 7.3:

Thermal characteristics).

Table 24. Operating conditions at power-up / power-down

Symbol Parameter Conditions Min Max Unit

tVDD

VDD rise time rate

0

µs/V

VDD fall time rate 10 

tVDDA

VDDA rise time rate

0

µs/V

VDDA fall time rate 10 

tVDDUSB

VDDUSB rise time rate

0

µs/V

VDDUSB fall time rate 10 

Table 25. Embedded reset and power control block characteristics

Symbol Parameter Conditions(1) Min Typ Max Unit

tRSTTEMPO(2) Reset temporization after

BOR0 is detected VDD rising - 250 400 s

VBOR0(2) Brown-out reset threshold 0

Rising edge 1.62 1.66 1.7

Falling edge 1.6 1.64 1.69

VBOR1 Brown-out reset threshold 1

Rising edge 2.06 2.1 2.14

Falling edge 1.96 2 2.04

VBOR2 Brown-out reset threshold 2

Rising edge 2.26 2.31 2.35

Falling edge 2.16 2.20 2.24

VBOR3 Brown-out reset threshold 3

Rising edge 2.56 2.61 2.66

Falling edge 2.47 2.52 2.57

VBOR4 Brown-out reset threshold 4

Rising edge 2.85 2.90 2.95

Falling edge 2.76 2.81 2.86

VPVD0

Programmable voltage

detector threshold 0

Rising edge 2.1 2.15 2.19

Falling edge 2 2.05 2.1

Electrical characteristics STM32L475xx

92/204 DS10969 Rev 5

VPVD1 PVD threshold 1

Rising edge 2.26 2.31 2.36

Falling edge 2.15 2.20 2.25

VPVD2 PVD threshold 2

Rising edge 2.41 2.46 2.51

Falling edge 2.31 2.36 2.41

VPVD3 PVD threshold 3

Rising edge 2.56 2.61 2.66

Falling edge 2.47 2.52 2.57

VPVD4 PVD threshold 4

Rising edge 2.69 2.74 2.79

Falling edge 2.59 2.64 2.69

VPVD5 PVD threshold 5

Rising edge 2.85 2.91 2.96

Falling edge 2.75 2.81 2.86

VPVD6 PVD threshold 6

Rising edge 2.92 2.98 3.04

Falling edge 2.84 2.90 2.96

Vhyst_BORH0 Hysteresis voltage of BORH0

Hysteresis in

continuous

mode

-20-

Hysteresis in

other mode -30-

Vhyst_BOR_PVD

Hysteresis voltage of BORH

(except BORH0) and PVD --100-mV

IDD

(BOR_PVD)(2)

BOR(3) (except BOR0) and

PVD consumption from VDD

--1.11.6µA

VPVM1

VDDUSB peripheral voltage

monitoring - 1.18 1.22 1.26 V

VPVM3

VDDA peripheral voltage

monitoring

Rising edge 1.61 1.65 1.69

Falling edge 1.6 1.64 1.68

VPVM4

VDDA peripheral voltage

monitoring

Rising edge 1.78 1.82 1.86

Falling edge 1.77 1.81 1.85

Vhyst_PVM3 PVM3 hysteresis - - 10 - mV

Vhyst_PVM4 PVM4 hysteresis - - 10 - mV

IDD

(PVM1/PVM2)

(2)

PVM1 and PVM2

consumption from VDD

--0.2-µA

IDD

(PVM3/PVM4)

(2)

PVM3 and PVM4

consumption from VDD

--2-µA

1. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power

sleep modes.

2. Guaranteed by design.

3. BOR0 is enabled in all modes (except shutdown) and its consumption is therefore included in the supply

current characteristics tables.

Table 25. Embedded reset and power control block characteristics (continued)

Symbol Parameter Conditions(1) Min Typ Max Unit

DS10969 Rev 5 93/204

STM32L475xx Electrical characteristics

190

6.3.4 Embedded voltage reference

The parameters given in Table 26 are derived from tests performed under the ambient

temperature and supply voltage conditions summarized in Table 23: General operating

conditions.

Table 26. Embedded internal voltage reference

Symbol Parameter Conditions Min Typ Max Unit

VREFINT Internal reference voltage –40 °C < TA < +130 °C 1.182 1.212 1.232 V

tS_vrefint (1)

ADC sampling time when

reading the internal reference

voltage

-4

(2) --µs

tstart_vrefint

Start time of reference voltage

buffer when ADC is enable --812

(2) µs

IDD(VREFINTBUF)

VREFINT buffer consumption

from VDD when converted by

ADC

- - 12.5 20(2) µA

VREFINT

Internal reference voltage

spread over the temperature

range

VDD = 3 V - 5 7.5(2) mV

TCoeff

Average temperature

coefficient –40°C < TA < +130°C - 30 50(2) ppm/°C

ACoeff Long term stability 1000 hours, T = 25°C - 300 1000(2) ppm

VDDCoeff Average voltage coefficient 3.0 V < VDD < 3.6 V - 250 1200(2) ppm/V

VREFINT_DIV1 1/4 reference voltage

24 25 26

VREFINT

VREFINT_DIV2 1/2 reference voltage 49 50 51

VREFINT_DIV3 3/4 reference voltage 74 75 76

1. The shortest sampling time can be determined in the application by multiple iterations.

2. Guaranteed by design.

Electrical characteristics STM32L475xx

94/204 DS10969 Rev 5

Figure 13. VREFINT versus temperature

MSv40169V1

1.185

1.19

1.195

1.2

1.205

1.21

1.215

1.22

1.225

1.23

1.235

-40 -20 0 20 40 60 80 100 120

°C

Mean Min Max

DS10969 Rev 5 95/204

STM32L475xx Electrical characteristics

190

6.3.5 Supply current characteristics

The current consumption is a function of several parameters and factors such as the

operating voltage, ambient temperature, I/O pin loading, device software configuration,

operating frequencies, I/O pin switching rate, program location in memory and executed

binary code.

The current consumption is measured as described in Figure 12: Current consumption

measurement scheme.

The IDD_ALL parameters given in Table 27 to Table 39 represent the total MCU consumption

including the current supplying VDD , VDDA, VDDUSB and VBAT.

Typical and maximum current consumption

The MCU is placed under the following conditions:

•All I/O pins are in analog input mode

•All peripherals are disabled except when explicitly mentioned

•The Flash memory access time is adjusted with the minimum wait states number,

depending on the fHCLK frequency (refer to the table “Number of wait states according

to CPU clock (HCLK) frequency” available in the RM0351 reference manual).

•When the peripherals are enabled fPCLK = fHCLK

The parameters given in Table 27 to Table 40 are derived from tests performed under

ambient temperature and supply voltage conditions summarized in Table 23: General

operating conditions.

Electrical characteristics STM32L475xx

96/204 DS10969 Rev 5

Table 27. Current consumption in Run and Low-power run modes, code with data processing

running from Flash, ART enable (Cache ON Prefetch OFF)

Symbol Parameter

Conditions TYP MAX(1)

Unit

-Voltage

scaling fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48MHz included,

bypass mode

PLL ON above

48 MHz all

peripherals disable

Range 2

26 MHz 2.88 2.93 3.05 3.23 3.58 3.20 3.37 3.51 3.93 4.76

16 MHz 1.83 1.87 1.98 2.16 2.49 2.01 2.16 2.30 2.72 3.34

8 MHz 0.98 1.02 1.12 1.29 1.62 1.10 1.17 1.31 1.73 2.56

4 MHz 0.55 0.59 0.69 0.85 1.18 0.61 0.70 0.89 1.24 1.95

2 MHz 0.34 0.37 0.47 0.64 0.96 0.37 0.46 0.64 0.98 1.71

1 MHz 0.23 0.26 0.36 0.53 0.85 0.27 0.33 0.50 0.86 1.57

100 kHz 0.14 0.17 0.27 0.43 0.75 0.17 0.21 0.38 0.74 1.44

Range 1

80 MHz 10.2 10.3 10.5 10.7 11.1 11.22 11.8 12.1 12.5 13.3

72 MHz 9.24 9.31 9.47 9.69 10.1 10.16 10.7 11.0 11.4 12.2

64 MHz 8.25 8.32 8.46 8.68 9.09 9.08 9.6 9.9 10.3 11.1

48 MHz 6.28 6.35 6.5 6.72 7.11 6.91 7.3 7.6 8.0 8.8

32 MHz 4.24 4.30 4.44 4.65 5.04 4.66 4.97 5.26 5.67 6.51

24 MHz 3.21 3.27 3.4 3.61 3.98 3.53 3.76 4.05 4.46 5.30

16 MHz 2.19 2.24 2.36 2.56 2.94 2.41 2.66 2.95 3.16 3.99

IDD_ALL

(LPRun)

Supply

current in

Low-power

run mode

fHCLK = fMSI

all peripherals disable

2 MHz 272 303 413 592 958 330 393 579 954 1704

µA

1 MHz 154 184 293 473 835 195 265 457 822 1572

400 kHz 78 108 217 396 758 110 180 380 755 1505

100 kHz 42 73 182 360 723 75 138 331 706 1456

1. Guaranteed by characterization results, unless otherwise specified.

STM32L475xx Electrical characteristics

DS10969 Rev 5 97/204

Table 28. Current consumption in Run and Low-power run modes, code with data processing

running from Flash, ART disable

Symbol Parameter

Conditions TYP MAX(1)

Unit

-Voltage

scaling fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48MHz included,

bypass mode

PLL ON above

48 MHz all

peripherals disable

Range 2

26 MHz 3.15 3.19 3.31 3.50 3.85 3.47 3.70 3.84 4.26 4.88

16 MHz 2.24 2.28 2.39 2.57 2.90 2.46 2.60 2.74 3.16 3.78

8 MHz 1.26 1.29 1.40 1.57 1.89 1.40 1.50 1.64 2.06 2.68

4 MHz 0.71 0.75 0.85 1.02 1.34 0.79 0.88 1.06 1.38 2.21

2 MHz 0.42 0.45 0.55 0.72 1.04 0.46 0.55 0.73 1.09 1.88

1 MHz 0.27 0.30 0.40 0.57 0.89 0.30 0.38 0.57 0.90 1.61

100 kHz 0.14 0.17 0.27 0.43 0.75 0.17 0.22 0.40 0.74 1.44

Range 1

80 MHz 10.0 10.1 10.3 10.6 11.0 11.00 11.35 11.64 12.26 13.10

72 MHz 9.06 9.13 9.28 9.51 9.92 9.97 10.36 10.65 11.06 11.69

64 MHz 8.96 9.04 9.22 9.48 9.92 9.86 10.25 10.54 10.95 11.79

48 MHz 7.64 7.72 7.91 8.17 8.62 8.40 8.76 8.90 9.52 10.36

32 MHz 5.49 5.57 5.74 5.98 6.40 6.04 6.40 6.69 7.10 7.94

24 MHz 4.16 4.22 4.36 4.57 4.96 4.60 4.86 5.15 5.56 6.19

16 MHz 2.93 2.99 3.13 3.35 3.75 3.22 3.43 3.72 4.13 4.97

IDD_ALL

(LPRun)

Supply

current in

Low-power

run

fHCLK = fMSI

all peripherals disable

2 MHz 358 392 503 683 1050 435 501 694 1069 1819

µA

1 MHz 197 230 340 519 880 245 312 512 887 1637

400 kHz 97 126 235 414 778 130 202 402 777 1527

100 kHz 47 77 186 365 726 85 147 347 711 1472

1. Guaranteed by characterization results, unless otherwise specified.

Electrical characteristics STM32L475xx

98/204 DS10969 Rev 5

Table 29. Current consumption in Run and Low-power run modes, code with data processing

running from SRAM1

Symbol Parameter

Conditions TYP MAX(1)

Unit

-Voltage

scaling fHCLK 25 °C 55 °C 85 °C 105

°C

125

°C 25 °C 55 °C 85 °C 105

°C

125

°C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48MHz included,

bypass mode

PLL ON above

48 MHz all

peripherals disable

Range 2

26 MHz 2.88 2.94 3.05 3.23 3.58 3.18 3.26 3.40 4.02 4.65

16 MHz 1.83 1.87 1.98 2.15 2.50 2.01 2.16 2.30 2.72 3.34

8 MHz 0.97 1.00 1.11 1.27 1.62 1.07 1.16 1.32 1.73 2.36

4 MHz 0.54 0.57 0.67 0.84 1.18 0.59 0.69 0.88 1.23 1.96

2 MHz 0.33 0.36 0.46 0.62 0.96 0.37 0.45 0.63 0.98 1.70

1 MHz 0.22 0.25 0.35 0.51 0.85 0.25 0.33 0.50 0.86 1.57

100 kHz 0.12 0.15 0.25 0.41 0.75 0.15 0.21 0.39 0.74 1.45

Range 1

80 MHz 10.2 10.3 10.5 10.7 11.1 11.22 11.57 11.86 12.07 13.11

72 MHz 9.25 9.31 9.46 9.68 10.1 10.18 10.41 10.55 10.76 11.80

64 MHz 8.25 8.31 8.46 8.67 9.08 9.08 9.37 9.66 9.87 10.91

48 MHz 6.26 6.33 6.48 6.69 7.11 6.89 7.11 7.25 7.67 8.50

32 MHz 4.22 4.28 4.42 4.63 5.03 4.64 4.86 5.15 5.56 6.19

24 MHz 3.20 3.25 3.38 3.59 3.99 3.52 3.70 3.84 4.26 5.09

16 MHz 2.18 2.22 2.35 2.55 2.94 2.40 2.55 2.84 3.25 4.09

IDD_ALL

(LPRun)

Supply

current in

low-power

run mode

fHCLK = fMSI

all peripherals disable

FLASH in power-down

2 MHz 242 275 384 562 924 300 380 573 927 1677

µA

1 MHz 130 162 269 445 809 180 243 435 810 1560

400 kHz 61 90 197 374 734 95 160 353 728 1478

100 kHz 26 56 163 339 702 55 122 314 679 1429

1. Guaranteed by characterization results, unless otherwise specified.

DS10969 Rev 5 99/204

STM32L475xx Electrical characteristics

190

Table 30. Typical current consumption in Run and Low-power run modes, with different codes

running from Flash, ART enable (Cache ON Prefetch OFF)

Symbol Parameter

Conditions TYP

Unit

TYP

Unit

-Voltage

scaling Code 25 °C 25 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up

to 48 MHz

included, bypass

mode PLL ON

above 48 MHz

all peripherals

disable

Range 2

fHCLK = 26 MHz

Reduced code(1) 2.9

111

µA/MHz

Coremark 3.1 118

Dhrystone 2.1 3.1 119

Fibonacci 2.9 112

While(1) 2.8 108

Range 1

fHCLK = 80 MHz

Reduced code(1) 10.2

127

µA/MHz

Coremark 10.9 136

Dhrystone 2.1 11.0 137

Fibonacci 10.5 131

While(1) 9.9 124

IDD_ALL

(LPRun)

Supply

current in

Low-power

run

fHCLK = fMSI = 2 MHz

all peripherals disable

Reduced code(1) 272

µA

136

µA/MHz

Coremark 291 145

Dhrystone 2.1 302 151

Fibonacci 269 135

While(1) 269 135

1. Reduced code used for characterization results provided in Table 27, Table 28, Table 29.

Table 31. Typical current consumption in Run and Low-power run modes, with different codes

running from Flash, ART disable

Symbol Parameter

Conditions TYP

Unit

TYP

Unit

-Voltage

scaling Code 25 °C 25 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48 MHz included,

bypass mode

PLL ON above

48 MHz

all peripherals

disable

Range 2

fHCLK = 26 MHz

Reduced code(1) 3.1

119

µA/MHz

Coremark 2.9 111

Dhrystone 2.1 2.8 111

Fibonacci 2.7 104

While(1) 2.6 100

Range 1

fHCLK = 80 MHz

Reduced code(1) 10.0

125

µA/MHz

Coremark 9.4 117

Dhrystone 2.1 9.1 114

Fibonacci 9.0 112

While(1) 9.3 116

Electrical characteristics STM32L475xx

100/204 DS10969 Rev 5

IDD_ALL

(LPRun)

Supply

current in

Low-power

run

fHCLK = fMSI = 2 MHz

all peripherals disable

Reduced code(1) 358

µA

179

µA/MHz

Coremark 392 196

Dhrystone 2.1 390 195

Fibonacci 385 192

While(1) 385 192

1. Reduced code used for characterization results provided in Table 27, Table 28, Table 29.

Table 31. Typical current consumption in Run and Low-power run modes, with different codes

running from Flash, ART disable (continued)

Symbol Parameter

Conditions TYP

Unit

TYP

Unit

-Voltage

scaling Code 25 °C 25 °C

Table 32. Typical current consumption in Run and Low-power run modes, with different codes

running from SRAM1

Symbol Parameter

Conditions TYP

Unit

TYP

Unit

-Voltage

scaling Code 25 °C 25 °C

IDD_ALL

(Run)

Supply

current in

Run mode

fHCLK = fHSE up to

48 MHz included,

bypass mode

PLL ON above

48 MHz all

peripherals

disable

Range 2

fHCLK = 26 MHz

Reduced code(1) 2.9

111

µA/MHz

Coremark 2.9 111

Dhrystone 2.1 2.9 111

Fibonacci 2.6 100

While(1) 2.6 100

Range 1

fHCLK = 80 MHz

Reduced code(1) 10.2

127

µA/MHz

Coremark 10.4 130

Dhrystone 2.1 10.3 129

Fibonacci 9.6 120

While(1) 9.3 116

IDD_ALL

(LPRun)

Supply

current in

Low-power

run

fHCLK = fMSI = 2 MHz

all peripherals disable

Reduced code(1) 242

µA

121

µA/MHz

Coremark 242 121

Dhrystone 2.1 242 121

Fibonacci 225 112

While(1) 242 121

1. Reduced code used for characterization results provided in Table 27, Table 28, Table 29.

STM32L475xx Electrical characteristics

DS10969 Rev 5 101/204

Table 33. Current consumption in Sleep and Low-power sleep modes, Flash ON

Symbol Parameter

Conditions TYP MAX(1)

Unit

-Voltage

scaling fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Sleep)

Supply

current in

sleep

mode,

fHCLK = fHSE up

to 48 MHz

included, bypass

mode

PLL ON above

48 MHz all

peripherals

disable

Range 2

26 MHz 0.92 0.96 1.07 1.25 1.59 1.012 1.14 1.36 1.77 2.40

16 MHz 0.61 0.65 0.75 0.92 1.27 0.69 0.78 0.97 1.32 2.04

8 MHz 0.36 0.40 0.50 0.66 1.01 0.42 0.50 0.68 1.03 1.75

4 MHz 0.24 0.27 0.37 0.53 0.87 0.28 0.36 0.54 0.89 1.60

2 MHz 0.18 0.20 0.30 0.47 0.81 0.215 0.29 0.46 0.82 1.53

1 MHz 0.15 0.17 0.27 0.43 0.77 0.18 0.25 0.44 0.78 1.49

100 kHz 0.12 0.14 0.24 0.41 0.74 0.15 0.21 0.39 0.74 1.44

Range 1

80 MHz 2.96 3.00 3.13 3.33 3.73 3.26 3.43 3.72 4.13 4.97

72 MHz 2.69 2.73 2.85 3.05 3.45 2.96 3.21 3.50 3.71 4.54

64 MHz 2.41 2.45 2.58 2.77 3.17 2.65 2.88 3.17 3.58 4.21

48 MHz 1.88 1.93 2.07 2.27 2.67 2.10 2.27 2.41 2.83 3.66

32 MHz 1.30 1.35 1.48 1.68 2.08 1.43 1.56 1.85 2.26 3.10

24 MHz 1.01 1.05 1.17 1.37 1.76 1.11 1.23 1.52 1.93 2.77

16 MHz 0.71 0.75 0.87 1.07 1.45 0.80 0.90 1.19 1.60 2.44

IDD_ALL

(LPSleep)

Supply

current in

low-power

sleep

mode

fHCLK = fMSI

all peripherals disable

2 MHz 96 126 233 412 775 130 202 402 777 1527

µA

1 MHz 65 94 202 381 742 95 166 358 733 1483

400 kHz 43 73 181 359 718 75 138 331 706 1456

100 kHz 33 63 171 348 708 65 128 322 691 1441

1. Guaranteed by characterization results, unless otherwise specified.

Electrical characteristics STM32L475xx

102/204 DS10969 Rev 5

Table 34. Current consumption in Low-power sleep modes, Flash in power-down

Symbol Parameter

Conditions TYP MAX(1)

Unit

-Voltage

scaling fHCLK 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(LPSleep)

Supply current

in low-power

sleep mode

fHCLK = fMSI

all peripherals disable

2 MHz 81 110 217 395 754 115 182 375 750 1500

µA

1 MHz 50 78 185 362 720 80 149 342 717 1456

400 kHz 28 57 163 340 698 60 122 314 689 1429

100 kHz 18 47 155 332 686 50 114 313 688 1438

1. Guaranteed by characterization results, unless otherwise specified.

Table 35. Current consumption in Stop 2 mode

Symbol Parameter

Conditions TYP MAX(1)

Unit

-V

DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Stop 2)

Supply current in

Stop 2 mode,

RTC disabled

1.8 V 1.14 3.77 14.7 34.7 77 2.7 9 37 87 193

µA

2.4 V 1.15 3.86 15 35.5 79.1 2.7 10 38 89 198

3 V 1.18 3.97 15.4 36.4 81.3 2.8 10 39 91 203

3.6 V 1.26 4.11 16 38 85.1 3.0 10 40 95(2) 213

IDD_ALL

(Stop 2 with

RTC)

Supply current in

Stop 2 mode,

RTC enabled

RTC clocked by LSI

1.8 V 1.42 4.04 15 34.9 77.2 3.1 10 38 87 193

µA

2.4 V 1.5 4.22 15.4 35.7 79.2 3.2 11 39 89 198

3 V 1.64 4.37 15.8 36.7 81.4 3.4 11 40 92 204

3.6 V 1.79 4.65 16.6 38.4 85.4 3.6 12 42 96 214

RTC clocked by LSE

bypassed at 32768 Hz

1.8 V 1.5 4.13 15.2 35.3 77.6 3.2 10 38 88 194

2.4 V 1.63 4.33 15.6 36 79.6 3.4 11 39 90 199

3 V 1.79 4.55 16.1 37 81.8 3.6 11 40 93 205

3.6 V 2.04 4.9 16.8 38.7 85.6 3.9 12 42 97 214

RTC clocked by LSE

quartz(3)

in low drive mode

1.8 V 1.43 3.99 14.7 35 - 3.2 10 37 88 -

2.4 V 1.54 4.11 15 35.8 - 3.3 10 38 90 -

3 V 1.67 4.29 15.5 36.7 - 3.4 11 39 92 -

3.6 V 1.87 4.57 16.2 38.3 - 3.7 11 41 96 -

STM32L475xx Electrical characteristics

DS10969 Rev 5 103/204

IDD_ALL

(wakeup from

Stop 2)

Supply current

during wakeup

from Stop 2

mode

Wakeup clock is

MSI = 48 MHz,

voltage Range 1.

See (4).

3 V 1.9 - - - -

-mA

Wakeup clock is

MSI = 4 MHz,

voltage Range 2.

See (4).

3 V 2.24 - - - -

Wakeup clock is

HSI16 = 16 MHz,

voltage Range 1.

See (4).

3 V 2.1 - - - -

1. Guaranteed by characterization results, unless otherwise specified.

2. Guaranteed by test in production.

3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

4. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 42: Low-power mode wakeup timings.

Table 35. Current consumption in Stop 2 mode (continued)

Symbol Parameter

Conditions TYP MAX(1)

Unit

-V

DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

Table 36. Current consumption in Stop 1 mode

Symbol Parameter Conditions TYP MAX(1)

Unit

-V

DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Stop 1)

Supply

current in

Stop 1 mode,

RTC disabled

1.8 V 6.59 24.7 92.7 208 437 16 62 232 520 1093

µA

2.4 V 6.65 24.8 92.9 209 439 17 62 232 523 1098

3 V 6.65 24.9 93.3 210 442 17 62 233 525 1105

3.6 V 6.70 25.1 93.8 212 447 17 63 235 530 1118

Electrical characteristics STM32L475xx

104/204 DS10969 Rev 5

IDD_ALL

(Stop 1 with

RTC)

Supply

current in stop

1 mode,

RTC enabled

RTC clocked by LSI

1.8 V 6.88 25.0 93.1 209 439 17 63 233 523 1098

µA

2.4 V 7.02 25.2 93.7 210 441 18 63 234 525 1103

3 V 7.12 25.4 94.2 212 444 18 64 236 530 1110

3.6 V 7.25 25.7 95.2 214 449 18 64 238 535 1123

RTC clocked by LSE

bypassed, at 32768 Hz

1.8 V 6.91 25.2 93.4 210 440 17 63 234 525 1100

2.4 V 7.04 25.3 94.2 211 443 18 63 236 528 1108

3 V 7.19 25.7 95.0 212 446 18 64 238 530 1115

3.6 V 7.97 26.0 96.1 215 451 20 65 240 538 1128

RTC clocked by LSE quartz(2)

in low drive mode

1.8 V 6.85 25.0 93.0 208.3 - 17 63 233 521 -

2.4 V 6.94 25.1 93.2 209.3 - 17 63 233 523 -

3 V 7.10 25.2 93.6 210.3 - 18 63 234 526 -

3.6 V 7.34 25.4 94.1 212.3 - 18 64 235 531 -

IDD_ALL

(wakeup

from Stop1)

Supply

current during

wakeup from

Stop 1

Wakeup clock MSI = 48 MHz,

voltage Range 1,

See (3).

3 V 1.47 - - - -

-mA

Wakeup clock MSI = 4 MHz,

voltage Range 2,

See (3).

3 V 1.7 - - - -

Wakeup clock

HSI16 = 16 MHz,

voltage Range 1,

See (3).

3 V 1.62 - - - -

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 42: Low-power mode wakeup timings.

Table 36. Current consumption in Stop 1 mode (continued)

Symbol Parameter

Conditions TYP MAX(1)

Unit

-V

DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

STM32L475xx Electrical characteristics

DS10969 Rev 5 105/204

Table 37. Current consumption in Stop 0 mode

Symbol Parameter

Conditions TYP MAX(1)

1. Guaranteed by characterization results, unless otherwise specified.

Unit

VDD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Stop 0)

Supply

current in

Stop 0 mode,

RTC disabled

1.8 V 108 132 217 356 631 153 213 426 773 1461

µA

2.4 V 110 134 219 358 634 158 218 431 778 1468

3 V 111 135 220 360 637 161 221 433 783 1476

3.6 V 113 137 222 363 642 166 226 438 791(2)

2. Guaranteed by test in production.

1488

Electrical characteristics STM32L475xx

106/204 DS10969 Rev 5

Table 38. Current consumption in Standby mode

Symbol Parameter

Conditions TYP MAX(1)

Unit

-V

DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Standby)

Supply current

in Standby

mode (backup

registers

retained),

RTC disabled

no independent watchdog

1.8 V 114 355 1540 4146 10735 176 888 3850 10365 26838

2.4 V 138 407 1795 4828 12451 223 1018 4488 12070 31128

3 V 150 486 2074 5589 14291 263 1215 5185 13973 35728

3.6 V 198 618 2608 6928 17499 383 1545 6520 17320

(2) 43748

with independent

watchdog

1.8 V 317 - - - - - - - - -

2.4 V 391 - - - - - - - - -

3 V 438 - - - - - - - - -

3.6 V 566 - - - - - - - - -

IDD_ALL

(Standby

with RTC)

Supply current

in Standby

mode (backup

registers

retained),

RTC enabled

RTC clocked by LSI, no

independent watchdog

1.8 V 377 621 1873 4564 11318 491 1207 4250 10867 27537

2.4 V 464 756 2210 5348 13166 614 1436 4986 12694 31986

3 V 572 913 2599 6219 15197 770 1727 5815 14729 36815

3.6 V 722 1144 3253 7724 18696 1012 2176 7294 18275 45184

RTC clocked by LSI, with

independent watchdog

1.8 V 456 - - - - - - - - -

2.4 V 557 - - - - - - - - -

3 V 663 - - - - - - - - -

3.6 V 885 - - - - - - - - -

RTC clocked by LSE

bypassed at 32768Hz

1.8 V 289 527 1747 4402 11009 - - - - -

2.4 V 396 671 2108 5202 12869 - - - - -

3 V 528 853 2531 6095 14915 - - - - -

3.6 V 710 1111 3115 7470 18221 - - - - -

RTC clocked by LSE

quartz (3) in low drive mode

1.8 V 416 640 1862 4479 11908 - - - - -

2.4 V 514 796 2193 5236 13689 - - - - -

3 V 652 961 2589 6103 15598 - - - - -

3.6 V 821 1226 3235 7551 17947 - - - - -

STM32L475xx Electrical characteristics

DS10969 Rev 5 107/204

IDD_ALL

(SRAM2)(4)

Supply current

to be added in

Standby mode

when SRAM2

is retained

1.8 V 235 641 2293 5192 11213 588 1603 5733 12980 28033

2.4 V 237 645 2303 5213 11246 593 1613 5758 13033 28115

3 V 236 647 2306 5221 11333 593 1618 5765 13053 28333

3.6 V 235 646 2308 5200 11327 595 1620 5770 13075 28350

IDD_ALL

(wakeup

from

Standby)

Supply current

during wakeup

from Standby

mode

Wakeup clock is

MSI = 4 MHz.

See (5).

3 V 1.7 - - - - - mA

1. Guaranteed by characterization results, unless otherwise specified.

2. Guaranteed by test in production.

3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

4. The supply current in Standby with SRAM2 mode is: IDD_ALL(Standby) + IDD_ALL(SRAM2). The supply current in Standby with RTC with SRAM2 mode is: IDD_ALL(Standby

+ RTC) + IDD_ALL(SRAM2).

5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 42: Low-power mode wakeup timings.

Table 38. Current consumption in Standby mode (continued)

Symbol Parameter

Conditions TYP MAX(1)

Unit

-V

DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

Table 39. Current consumption in Shutdown mode

Symbol Parameter

Conditions TYP MAX(1)

Unit

-V

DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_ALL

(Shutdown)

Supply current

in Shutdown

mode

(backup

registers

retained) RTC

disabled

1.8 V 29.8 194 1110 3250 9093 75 485 2775 8125 22733

2.4 V 44.3 237 1310 3798 10473 111 593 3275 9495 26183

3 V 64.1 293 1554 4461 12082 160 733 3885 11153 30205

3.6 V 112 420 2041 5689 15186 280 1050 5103 14223 37965

Electrical characteristics STM32L475xx

108/204 DS10969 Rev 5

IDD_ALL

(Shutdown

with RTC)

Supply current

in Shutdown

mode

(backup

registers

retained) RTC

enabled

RTC clocked by LSE

bypassed at 32768 Hz

1.8 V 210 378 1299 3437 9357 - - - - -

2.4 V 303 499 1577 4056 10825 - - - - -

3 V 422 655 1925 4820 12569 - - - - -

3.6 V 584 888 2511 6158 15706 - - - - -

RTC clocked by LSE

quartz (2) in low drive

mode

1.8 V 329 499 1408 3460 - - - - - -

2.4 V 431 634 1688 4064 - - - - - -

3 V 554 791 2025 4795 - - - - - -

3.6 V 729 1040 2619 6129 - - - - - -

IDD_ALL

(wakeup from

Shutdown)

Supply current

during wakeup

from Shutdown

mode

Wakeup clock is

MSI = 4 MHz.

See (3).

3 V 0.6 - - - - - - - - - mA

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

3. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 42: Low-power mode wakeup timings.

Table 39. Current consumption in Shutdown mode (continued)

Symbol Parameter

Conditions TYP MAX(1)

Unit

-V

DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

STM32L475xx Electrical characteristics

DS10969 Rev 5 109/204

Table 40. Current consumption in VBAT mode

Symbol Parameter

Conditions TYP MAX(1)

Unit

-V

BAT 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C 55 °C 85 °C 105 °C 125 °C

IDD_VBAT

Backup domain

supply current

RTC disabled

1.8 V 4 29 196 587 1663 10.8 73 490 1468 4158

2.4 V 5.27 36 226 673 1884 13.2 90 565 1683 4710

3 V 6 42 264 775 2147 15.5 106 660 1938 5368

3.6 V 10 58 323 919 2488 25.8 144 808 2298 6220

RTC enabled and

clocked by LSE

bypassed at 32768 Hz

1.8 V 183 201 367 729 - - - - - -

2.4 V 268 295 486 901 - - - - - -

3 V 376 412 602 1075 - - - - - -

3.6 V 508 558 752 1299 - - - - - -

RTC enabled and

clocked by LSE

quartz(2)

1.8 V 302 344 521 915 1978 - - - - -

2.4 V 388 436 639 1091 2289 - - - - -

3 V 494 549 784 1301 2656 - - - - -

3.6 V 630 692 971 1571 3115 - - - - -

1. Guaranteed by characterization results, unless otherwise specified.

2. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.

Electrical characteristics STM32L475xx

110/204 DS10969 Rev 5

I/O system current consumption

The current consumption of the I/O system has two components: static and dynamic.

I/O static current consumption

All the I/Os used as inputs with pull-up generate current consumption when the pin is

externally held low. The value of this current consumption can be simply computed by using

the pull-up/pull-down resistors values given in Table 60: I/O static characteristics.

For the output pins, any external pull-down or external load must also be considered to

estimate the current consumption.

Additional I/O current consumption is due to I/Os configured as inputs if an intermediate

voltage level is externally applied. This current consumption is caused by the input Schmitt

trigger circuits used to discriminate the input value. Unless this specific configuration is

required by the application, this supply current consumption can be avoided by configuring

these I/Os in analog mode. This is notably the case of ADC input pins which should be

configured as analog inputs.

Caution: Any floating input pin can also settle to an intermediate voltage level or switch inadvertently,

as a result of external electromagnetic noise. To avoid current consumption related to

floating pins, they must either be configured in analog mode, or forced internally to a definite

digital value. This can be done either by using pull-up/down resistors or by configuring the

pins in output mode.

I/O dynamic current consumption

In addition to the internal peripheral current consumption measured previously (see

Table 41: Peripheral current consumption), the I/Os used by an application also contribute

to the current consumption. When an I/O pin switches, it uses the current from the I/O

supply voltage to supply the I/O pin circuitry and to charge/discharge the capacitive load

(internal or external) connected to the pin:

where

ISW is the current sunk by a switching I/O to charge/discharge the capacitive load

VDDIOx is the I/O supply voltage

fSW is the I/O switching frequency

C is the total capacitance seen by the I/O pin: C = CINT+ CEXT + CS

CS is the PCB board capacitance including the pad pin.

The test pin is configured in push-pull output mode and is toggled by software at a fixed

frequency.

ISW VDDIOx fSW C××=

DS10969 Rev 5 111/204

STM32L475xx Electrical characteristics

190

On-chip peripheral current consumption

The current consumption of the on-chip peripherals is given in Table 41. The MCU is placed

under the following conditions:

•All I/O pins are in Analog mode

•The given value is calculated by measuring the difference of the current consumptions:

– when the peripheral is clocked on

– when the peripheral is clocked off

•Ambient operating temperature and supply voltage conditions summarized in Table 20:

Voltage characteristics

•The power consumption of the digital part of the on-chip peripherals is given in

Table 41. The power consumption of the analog part of the peripherals (where

applicable) is indicated in each related section of the datasheet.

Table 41. Peripheral current consumption

Peripheral Range 1 Range 2 Low-power run

and sleep Unit

AHB

Bus Matrix(1) 4.5 3.7 4.1

µA/MHz

ADC independent clock domain 0.4 0.1 0.2

ADC AHB clock domain 5.5 4.7 5.5

CRC 0.4 0.2 0.3

DMA1 1.4 1.3 1.4

DMA2 1.5 1.3 1.4

FLASH 6.2 5.2 5.8

FMC 8.9 7.5 8.4

GPIOA(2) 4.8 3.8 4.4

GPIOB(2) 4.8 4.0 4.6

GPIOC(2) 4.5 3.8 4.3

GPIOD(2) 4.6 3.9 4.4

GPIOE(2) 5.2 4.5 4.9

GPIOF(2) 5.9 4.9 5.7

GPIOG(2) 4.3 3.8 4.2

GPIOH(2) 0.7 0.6 0.8

OTG_FS independent clock

domain 23.2 N/A N/A

OTG_FS AHB clock domain 16.4 N/A N/A

QUADSPI 7.8 6.7 7.3

RNG independent clock domain 2.2 N/A N/A

RNG AHB clock domain 0.6 N/A N/A

SRAM1 0.9 0.8 0.9

Electrical characteristics STM32L475xx

112/204 DS10969 Rev 5

AHB

SRAM2 1.6 1.4 1.6

µA/MHzTSC 1.8 1.4 1.6

All AHB Peripherals 118.5 77.3 87.6

APB1

AHB to APB1 bridge(3) 0.9 0.7 0.9

µA/MHz

CAN1 4.6 4.0 4.4

DAC1 2.4 1.9 2.2

I2C1 independent clock domain 3.7 3.1 3.2

I2C1 APB clock domain 1.3 1.1 1.5

I2C2 independent clock domain 3.7 3.0 3.2

I2C2 APB clock domain 1.4 1.1 1.5

I2C3 independent clock domain 2.9 2.3 2.5

I2C3 APB clock domain 0.9 0.9 1.1

LPUART1 independent clock

domain 2.1 1.6 2.0

LPUART1 APB clock domain 0.6 0.6 0.6

LPTIM1 independent clock

domain 3.3 2.6 2.9

LPTIM1 APB clock domain 0.9 0.8 1.0

LPTIM2 independent clock

domain 3.1 2.7 2.9

LPTIM2 APB clock domain 0.8 0.6 0.7

OPAMP 0.4 0.4 0.3

PWR 0.5 0.5 0.4

SPI2 1.8 1.6 1.6

SPI3 2.1 1.7 1.8

SWPMI1 independent clock

domain 2.3 1.8 2.2

SWPMI1 APB clock domain 1.1 1.1 1.0

TIM2 6.8 5.7 6.3

TIM3 5.4 4.6 5.0

TIM4 5.2 4.4 4.9

TIM5 6.5 5.5 6.1

TIM6 1.1 1.0 1.0

TIM7 1.1 0.9 1.0

Table 41. Peripheral current consumption (continued)

Peripheral Range 1 Range 2 Low-power run

and sleep Unit

DS10969 Rev 5 113/204

STM32L475xx Electrical characteristics

190

APB1

USART2 independent clock

domain 4.1 3.6 3.8

µA/MHz

USART2 APB clock domain 1.4 1.1 1.5

USART3 independent clock

domain 4.7 4.1 4.2

USART3 APB clock domain 1.5 1.3 1.7

UART4 independent clock

domain 3.9 3.2 3.5

UART4 APB clock domain 1.5 1.3 1.6

UART5 independent clock

domain 3.9 3.2 3.5

UART5 APB clock domain 1.3 1.2 1.4

WWDG 0.5 0.5 0.5

All APB1 on 84.2 70.7 80.2

APB2

AHB to APB2 bridge(4) 1.0 0.9 0.9

DFSDM1 5.6 4.6 5.3

FW 0.7 0.5 0.7

SAI1 independent clock domain 2.6 2.1 2.3

SAI1 APB clock domain 2.1 1.8 2.0

SAI2 independent clock domain 3.3 2.7 3.0

SAI2 APB clock domain 2.4 2.1 2.2

SDMMC1 independent clock

domain 4.7 3.9 4.2

SDMMC1 APB clock domain 2.5 1.9 2.1

SPI1 2.0 1.6 1.9

SYSCFG/VREFBUF/COMP 0.6 0.4 0.5

TIM1 8.3 6.9 7.9

TIM8 8.6 7.1 8.1

TIM15 4.1 3.4 3.9

TIM16 3.0 2.5 2.9

TIM17 3.0 2.4 2.9

USART1 independent clock

domain 4.9 4.0 4.4

USART1 APB clock domain 1.5 1.3 1.7

All APB2 on 56.8 43.3 48.2

ALL 256.8 189.6 215.5

Table 41. Peripheral current consumption (continued)

Peripheral Range 1 Range 2 Low-power run

and sleep Unit

Electrical characteristics STM32L475xx

114/204 DS10969 Rev 5

6.3.6 Wakeup time from low-power modes and voltage scaling

transition times

The wakeup times given in Table 42 are the latency between the event and the execution of

the first user instruction.

The device goes in low-power mode after the WFE (Wait For Event) instruction.

1. The BusMatrix is automatically active when at least one master is ON (CPU, DMA).

2. The GPIOx (x= A…H) dynamic current consumption is approximately divided by a factor two versus this table values when

the GPIO port is locked thanks to LCKK and LCKy bits in the GPIOx_LCKR register. In order to save the full GPIOx current

consumption, the GPIOx clock should be disabled in the RCC when all port I/Os are used in alternate function or analog

mode (clock is only required to read or write into GPIO registers, and is not used in AF or analog modes).

3. The AHB to APB1 Bridge is automatically active when at least one peripheral is ON on the APB1.

4. The AHB to APB2 Bridge is automatically active when at least one peripheral is ON on the APB2.

Table 42. Low-power mode wakeup timings(1)

Symbol Parameter Conditions Typ Max Unit

tWUSLEEP

Wakeup time from Sleep

mode to Run mode -66

Nb of

CPU

cycles

tWULPSLEEP

Wakeup time from Low-

power sleep mode to Low-

power run mode

Wakeup in Flash with Flash in power-down during

low-power sleep mode (SLEEP_PD=1 in

FLASH_ACR) and with clock MSI = 2 MHz

69.3

tWUSTOP0

Wake up time from Stop 0

mode to Run mode in Flash

Range 1

Wakeup clock MSI = 48 MHz 5.6 10.9

µs

Wakeup clock HSI16 = 16 MHz 4.7 10.4

Range 2

Wakeup clock MSI = 24 MHz 5.7 11.1

Wakeup clock HSI16 = 16 MHz 4.5 10.5

Wakeup clock MSI = 4 MHz 6.6 14.2

Wake up time from Stop 0

mode to Run mode in

SRAM1

Range 1

Wakeup clock MSI = 48 MHz 0.7 2.05

Wakeup clock HSI16 = 16 MHz 1.7 2.8

Range 2

Wakeup clock MSI = 24 MHz 0.8 2.72

Wakeup clock HSI16 = 16 MHz 1.7 2.8

Wakeup clock MSI = 4 MHz 2.4 11.32

DS10969 Rev 5 115/204

STM32L475xx Electrical characteristics

190

tWUSTOP1

Wake up time from Stop 1

mode to Run mode in Flash

Range 1

Wakeup clock MSI = 48 MHz 6.2 10.2

µs

Wakeup clock HSI16 = 16 MHz 6.3 8.99

Range 2

Wakeup clock MSI = 24 MHz 6.3 10.46

Wakeup clock HSI16 = 16 MHz 6.3 8.87

Wakeup clock MSI = 4 MHz 8.0 13.23

Wake up time from Stop 1

mode to Run mode in

SRAM1

Range 1

Wakeup clock MSI = 48 MHz 4.5 5.78

Wakeup clock HSI16 = 16 MHz 5.5 7.1

Range 2

Wakeup clock MSI = 24 MHz 5.0 6.5

Wakeup clock HSI16 = 16 MHz 5.5 7.1

Wakeup clock MSI = 4 MHz 8.2 13.5

Wake up time from Stop 1

mode to Low-power run

mode in Flash Regulator in

low-power

mode (LPR=1 in

PWR_CR1)

Wakeup clock MSI = 2 MHz

12.7 20

Wake up time from Stop 1

mode to Low-power run

mode in SRAM1

10.7 21.5

tWUSTOP2

Wake up time from Stop 2

mode to Run mode in Flash

Range 1

Wakeup clock MSI = 48 MHz 8.0 9.4

µs

Wakeup clock HSI16 = 16 MHz 7.3 9.3

Range 2

Wakeup clock MSI = 24 MHz 8.2 9.9

Wakeup clock HSI16 = 16 MHz 7.3 9.3

Wakeup clock MSI = 4 MHz 10.6 15.8

Wake up time from Stop 2

mode to Run mode in

SRAM1

Range 1

Wakeup clock MSI = 48 MHz 5.1 6.7

Wakeup clock HSI16 = 16 MHz 5.7 8

Range 2

Wakeup clock MSI = 24 MHz 5.5 6.65

Wakeup clock HSI16 = 16 MHz 5.7 7.53

Wakeup clock MSI = 4 MHz 8.2 16.6

tWUSTBY

Wakeup time from Standby

mode to Run mode Range 1

Wakeup clock MSI = 8 MHz 14.3 20.8

µs

Wakeup clock MSI = 4 MHz 20.1 35.5

tWUSTBY

SRAM2

Wakeup time from Standby

with SRAM2 to Run mode Range 1

Wakeup clock MSI = 8 MHz 14.3 24.3

µs

Wakeup clock MSI = 4 MHz 20.1 38.5

tWUSHDN

Wakeup time from

Shutdown mode to Run

mode

Range 1 Wakeup clock MSI = 4 MHz 256 330.6 µs

1. Guaranteed by characterization results.

Table 42. Low-power mode wakeup timings(1) (continued)

Symbol Parameter Conditions Typ Max Unit

Electrical characteristics STM32L475xx

116/204 DS10969 Rev 5

6.3.7 External clock source characteristics

High-speed external user clock generated from an external source

In bypass mode the HSE oscillator is switched off and the input pin is a standard GPIO.

The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,

the recommended clock input waveform is shown in Figure 14: High-speed external clock

source AC timing diagram.

Table 43. Regulator modes transition times(1)

Symbol Parameter Conditions Typ Max Unit

tWULPRUN

Wakeup time from Low-power run mode to

Run mode(2) Code run with MSI 2 MHz 5 7

µs

tVOST

Regulator transition time from Range 2 to

Range 1 or Range 1 to Range 2(3) Code run with MSI 24 MHz 20 40

1. Guaranteed by characterization results.

2. Time until REGLPF flag is cleared in PWR_SR2.

3. Time until VOSF flag is cleared in PWR_SR2.

Table 44. Wakeup time using USART/LPUART(1)

Symbol Parameter Conditions Typ Max Unit

tWUUSART

tWULPUART

Wakeup time needed to calculate the

maximum USART/LPUART baudrate

allowing to wakeup up from stop mode

when USART/LPUART clock source is

HSI16

Stop 0 mode - 1.7

µs

Stop 1 mode and Stop 2

mode -8.5

1. Guaranteed by design.

Table 45. High-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSE_ext User external clock source frequency

Voltage scaling

Range 1 -848

MHz

Voltage scaling

Range 2 -826

VHSEH OSC_IN input pin high level voltage - 0.7 VDDIOx -V

DDIOx V

VHSEL OSC_IN input pin low level voltage - VSS - 0.3 VDDIOx

tw(HSEH)

tw(HSEL)

OSC_IN high or low time

Voltage scaling

Range 1 7- -

Voltage scaling

Range 2 18 - -

1. Guaranteed by design.

DS10969 Rev 5 117/204

STM32L475xx Electrical characteristics

190

Figure 14. High-speed external clock source AC timing diagram

Low-speed external user clock generated from an external source

In bypass mode the LSE oscillator is switched off and the input pin is a standard GPIO.

The external clock signal has to respect the I/O characteristics in Section 6.3.14. However,

the recommended clock input waveform is shown in Figure 15.

Figure 15. Low-speed external clock source AC timing diagram

MS19214V2

VHSEH

tf(HSE)

90%

10%

THSE

tr(HSE)

VHSEL

tw(HSEH)

tw(HSEL)

Table 46. Low-speed external user clock characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fLSE_ext User external clock source frequency - - 32.768 1000 kHz

VLSEH OSC32_IN input pin high level voltage - 0.7 VDDIOx -V

DDIOx V

VLSEL OSC32_IN input pin low level voltage - VSS -0.3 V

DDIOx

tw(LSEH)

tw(LSEL)

OSC32_IN high or low time - 250 - - ns

1. Guaranteed by design.

MS19215V2

VLSEH

tf(LSE)

90%

10%

TLSE

tr(LSE)

VLSEL

tw(LSEH)

tw(LSEL)

Electrical characteristics STM32L475xx

118/204 DS10969 Rev 5

High-speed external clock generated from a crystal/ceramic resonator

The high-speed external (HSE) clock can be supplied with a 4 to 48 MHz crystal/ceramic

resonator oscillator. All the information given in this paragraph are based on design

simulation results obtained with typical external components specified in Table 47. In the

application, the resonator and the load capacitors have to be placed as close as possible to

the oscillator pins in order to minimize output distortion and startup stabilization time. Refer

to the crystal resonator manufacturer for more details on the resonator characteristics

(frequency, package, accuracy).

For CL1 and CL2, it is recommended to use high-quality external ceramic capacitors in the

5 pF to 20 pF range (typ.), designed for high-frequency applications, and selected to match

the requirements of the crystal or resonator (see Figure 16). CL1 and CL2 are usually the

same size. The crystal manufacturer typically specifies a load capacitance which is the

series combination of CL1 and CL2. PCB and MCU pin capacitance must be included (10 pF

can be used as a rough estimate of the combined pin and board capacitance) when sizing

CL1 and CL2.

Table 47. HSE oscillator characteristics(1)

1. Guaranteed by design.

Symbol Parameter Conditions(2)

2. Resonator characteristics given by the crystal/ceramic resonator manufacturer.

Min Typ Max Unit

fOSC_IN Oscillator frequency - 4 8 48 MHz

RFFeedback resistor - - 200 - k

IDD(HSE) HSE current consumption

During startup(3)

3. This consumption level occurs during the first 2/3 of the tSU(HSE) startup time

--5.5

VDD = 3 V,

Rm = 30 ,

CL = 10 pF@8 MHz

-0.44-

VDD = 3 V,

Rm = 45 ,

CL = 10 pF@8 MHz

-0.45-

VDD = 3 V,

Rm = 30 ,

CL = 5 pF@48 MHz

-0.68-

VDD = 3 V,

Rm = 30 ,

CL = 10 pF@48 MHz

-0.94-

VDD = 3 V,

Rm = 30 ,

CL = 20 pF@48 MHz

-1.77-

Maximum critical crystal

transconductance Startup - - 1.5 mA/V

tSU(HSE)(4)

4. tSU(HSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 8 MHz

oscillation is reached. This value is measured for a standard crystal resonator and it can vary significantly

with the crystal manufacturer

Startup time VDD is stabilized - 2 - ms

DS10969 Rev 5 119/204

STM32L475xx Electrical characteristics

190

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 16. Typical application with an 8 MHz crystal

1. REXT value depends on the crystal characteristics.

Low-speed external clock generated from a crystal resonator

The low-speed external (LSE) clock can be supplied with a 32.768 kHz crystal resonator

oscillator. All the information given in this paragraph are based on design simulation results

obtained with typical external components specified in Table 48. In the application, the

resonator and the load capacitors have to be placed as close as possible to the oscillator

pins in order to minimize output distortion and startup stabilization time. Refer to the crystal

resonator manufacturer for more details on the resonator characteristics (frequency,

package, accuracy).

MS19876V1

(1)

OSC_IN

OSC_OUT

Bias

controlled

gain

fHSE

REXT

8 MHz

resonator

Resonator with integrated

capacitors

CL1

CL2

Table 48. LSE oscillator characteristics (fLSE = 32.768 kHz)(1)

Symbol Parameter Conditions(2) Min Typ Max Unit

IDD(LSE) LSE current consumption

LSEDRV[1:0] = 00

Low drive capability -250-

LSEDRV[1:0] = 01

Medium low drive capability -315-

LSEDRV[1:0] = 10

Medium high drive capability -500 -

LSEDRV[1:0] = 11

High drive capability -630 -

Gmcritmax

Maximum critical crystal

LSEDRV[1:0] = 00

Low drive capability --0.5

µA/V

LSEDRV[1:0] = 01

Medium low drive capability - - 0.75

LSEDRV[1:0] = 10

Medium high drive capability --1.7

LSEDRV[1:0] = 11

High drive capability --2.7

tSU(LSE)(3) Startup time VDD is stabilized - 2 - s

Electrical characteristics STM32L475xx

120/204 DS10969 Rev 5

Note: For information on selecting the crystal, refer to the application note AN2867 “Oscillator

design guide for ST microcontrollers” available from the ST website www.st.com.

Figure 17. Typical application with a 32.768 kHz crystal

Note: An external resistor is not required between OSC32_IN and OSC32_OUT and it is forbidden

to add one.

1. Guaranteed by design.

2. Refer to the note and caution paragraphs below the table, and to the application note AN2867 “Oscillator design guide for

ST microcontrollers”.

3. tSU(LSE) is the startup time measured from the moment it is enabled (by software) to a stabilized 32.768 kHz oscillation is

reached. This value is measured for a standard crystal and it can vary significantly with the crystal manufacturer

MS30253V2

OSC32_IN

OSC32_OUT

Drive

programmable

amplifier

fLSE

32.768 kHz

resonator

Resonator with integrated

capacitors

CL1

CL2

DS10969 Rev 5 121/204

STM32L475xx Electrical characteristics

190

6.3.8 Internal clock source characteristics

The parameters given in Table 49 are derived from tests performed under ambient

temperature and supply voltage conditions summarized in Table 23: General operating

conditions. The provided curves are characterization results, not tested in production.

High-speed internal (HSI16) RC oscillator

Table 49. HSI16 oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fHSI16 HSI16 Frequency VDD=3.0 V, TA=30 °C 15.88 - 16.08 MHz

TRIM HSI16 user trimming step

Trimming code is not a

multiple of 64 0.2 0.3 0.4

Trimming code is a

multiple of 64 -4 -6 -8

DuCy(HSI16)(2) Duty Cycle - 45 - 55 %

Temp(HSI16) HSI16 oscillator frequency

drift over temperature

TA= 0 to 85 °C -1 - 1 %

TA= -40 to 125 °C -2 - 1.5 %

VDD(HSI16) HSI16 oscillator frequency

drift over VDD

VDD=1.62 V to 3.6 V -0.1 - 0.05 %

tsu(HSI16)(2) HSI16 oscillator start-up

time --0.81.2s

tstab(HSI16)(2) HSI16 oscillator

stabilization time --35s

IDD(HSI16)(2) HSI16 oscillator power

consumption - - 155 190 A

1. Guaranteed by characterization results.

2. Guaranteed by design.

Electrical characteristics STM32L475xx

122/204 DS10969 Rev 5

Figure 18. HSI16 frequency versus temperature

MSv39299V2

15.6

15.7

15.8

15.9

16.1

16.2

16.3

16.4

-40-200 20406080100120

MHz

°C

Mean min max

+2 %

+1.5 %

+1 %

-1 %

-1.5 %

-2 %

DS10969 Rev 5 123/204

STM32L475xx Electrical characteristics

190

Multi-speed internal (MSI) RC oscillator

Table 50. MSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fMSI

MSI frequency

after factory

calibration, done

at VDD=3 V and

TA=30 °C

MSI mode

Range 0 99 100 101

kHz

Range 1 198 200 202

Range 2 396 400 404

Range 3 792 800 808

Range 4 0.99 1 1.01

MHz

Range 5 1.98 2 2.02

Range 6 3.96 4 4.04

Range 7 7.92 8 8.08

Range 8 15.8 16 16.16

Range 9 23.8 24 24.4

Range 10 31.7 32 32.32

Range 11 47.5 48 48.48

PLL mode

XTAL=

32.768 kHz

Range 0 - 98.304 -

kHz

Range 1 - 196.608 -

Range 2 - 393.216 -

Range 3 - 786.432 -

Range 4 - 1.016 -

MHz

Range 5 - 1.999 -

Range 6 - 3.998 -

Range 7 - 7.995 -

Range 8 - 15.991 -

Range 9 - 23.986 -

Range 10 - 32.014 -

Range 11 - 48.005 -

TEMP(MSI)(2)

MSI oscillator

frequency drift

over temperature

MSI mode

TA= -0 to 85 °C -3.5 - 3

TA= -40 to 125 °C -8 - 6

Electrical characteristics STM32L475xx

124/204 DS10969 Rev 5

VDD(MSI)(2)

MSI oscillator

frequency drift

over VDD

(reference is 3 V)

MSI mode

Range 0 to 3

VDD=1.62 V

to 3.6 V -1.2 -

0.5

VDD=2.4 V

to 3.6 V -0.5 -

Range 4 to 7

VDD=1.62 V

to 3.6 V -2.5 -

0.7

VDD=2.4 V

to 3.6 V -0.8 -

Range 8 to 11

VDD=1.62 V

to 3.6 V -5 -

VDD=2.4 V

to 3.6 V -1.6 -

FSAMPLING

(MSI)(2)(6)

Frequency

variation in

sampling mode(3)

MSI mode

TA= -40 to 85 °C - 1 2

TA= -40 to 125 °C - 2 4

P_USB

Jitter(MSI)(6)

Period jitter for

USB clock(4)

PLL mode

Range 11

for next

transition ---3.458

for paired

transition ---3.916

MT_USB

Jitter(MSI)(6)

Medium term jitter

for USB clock(5)

PLL mode

Range 11

for next

transition --- 2

for paired

transition --- 1

CC jitter(MSI)(6) RMS cycle-to-

cycle jitter PLL mode Range 11 - - 60 - ps

P jitter(MSI)(6) RMS Period jitter PLL mode Range 11 - - 50 - ps

tSU(MSI)(6) MSI oscillator

start-up time

Range 0 - - 10 20

Range 1 - - 5 10

Range 2 - - 4 8

Range 3 - - 3 7

Range 4 to 7 - - 3 6

Range 8 to 11 - - 2.5 6

tSTAB(MSI)(6) MSI oscillator

stabilization time

PLL mode

Range 11

10 % of final

frequency - - 0.25 0.5

5 % of final

frequency --0.51.25

1 % of final

frequency ---2.5

Table 50. MSI oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

DS10969 Rev 5 125/204

STM32L475xx Electrical characteristics

190

IDD(MSI)(6)

MSI oscillator

power

consumption

MSI and

PLL mode

Range 0 - - 0.6 1

µA

Range 1 - - 0.8 1.2

Range 2 - - 1.2 1.7

Range 3 - - 1.9 2.5

Range 4 - - 4.7 6

Range 5 - - 6.5 9

Range 6 - - 11 15

Range 7 - - 18.5 25

Range 8 - - 62 80

Range 9 - - 85 110

Range 10 - - 110 130

Range 11 - - 155 190

1. Guaranteed by characterization results.

2. This is a deviation for an individual part once the initial frequency has been measured.

3. Sampling mode means Low-power run/Low-power sleep modes with Temperature sensor disable.

4. Average period of MSI @48 MHz is compared to a real 48 MHz clock over 28 cycles. It includes frequency tolerance + jitter

of MSI @48 MHz clock.

5. Only accumulated jitter of MSI @48 MHz is extracted over 28 cycles.

For next transition: min. and max. jitter of 2 consecutive frame of 28 cycles of the MSI @48 MHz, for 1000 captures over 28

cycles.

For paired transitions: min. and max. jitter of 2 consecutive frame of 56 cycles of the MSI @48 MHz, for 1000 captures over

56 cycles.

6. Guaranteed by design.

Table 50. MSI oscillator characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Electrical characteristics STM32L475xx

126/204 DS10969 Rev 5

Figure 19. Typical current consumption versus MSI frequency

Low-speed internal (LSI) RC oscillator

6.3.9 PLL characteristics

The parameters given in Table 52 are derived from tests performed under temperature and

VDD supply voltage conditions summarized in Table 23: General operating conditions.

Table 51. LSI oscillator characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fLSI LSI Frequency

VDD = 3.0 V, TA = 30 °C 31.04 - 32.96

kHz

VDD = 1.62 to 3.6 V, TA = -40 to 125 °C 29.5 - 34

tSU(LSI)(2) LSI oscillator start-

up time --80130s

tSTAB(LSI)(2) LSI oscillator

stabilization time 5% of final frequency - 125 180 s

IDD(LSI)(2) LSI oscillator power

consumption --110180nA

1. Guaranteed by characterization results.

2. Guaranteed by design.

DS10969 Rev 5 127/204

STM32L475xx Electrical characteristics

190

6.3.10 Flash memory characteristics

Table 52. PLL, PLLSAI1, PLLSAI2 characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fPLL_IN

PLL input clock(2) -4-16MHz

PLL input clock duty cycle - 45 - 55 %

fPLL_P_OUT PLL multiplier output clock P Voltage scaling Range 1 2.0645 - 80 MHz

Voltage scaling Range 2 2.0645 - 26

fPLL_Q_OUT PLL multiplier output clock Q Voltage scaling Range 1 8 - 80 MHz

Voltage scaling Range 2 8 - 26

fPLL_R_OUT PLL multiplier output clock R Voltage scaling Range 1 8 - 80 MHz

Voltage scaling Range 2 8 - 26

fVCO_OUT PLL VCO output Voltage scaling Range 1 64 - 344 MHz

Voltage scaling Range 2 64 - 128

tLOCK PLL lock time - - 15 40 s

Jitter RMS cycle-to-cycle jitter System clock 80 MHz -40-

±ps

RMS period jitter - 30 -

IDD(PLL) PLL power consumption on

VDD(1)

VCO freq = 64 MHz - 150 200

A

VCO freq = 96 MHz - 200 260

VCO freq = 192 MHz - 300 380

VCO freq = 344 MHz - 520 650

1. Guaranteed by design.

2. Take care of using the appropriate division factor M to obtain the specified PLL input clock values. The M factor is shared

between the 3 PLLs.

Table 53. Flash memory characteristics(1)

Symbol Parameter Conditions Typ Max Unit

tprog 64-bit programming time - 81.69 90.76 µs

tprog_row

one row (32 double

word) programming time

normal programming 2.61 2.90

fast programming 1.91 2.12

tprog_page

one page (2 Kbyte)

programming time

normal programming 20.91 23.24

fast programming 15.29 16.98

tERASE Page (2 KB) erase time - 22.02 24.47

tprog_bank

one bank (512 Kbyte)

programming time

normal programming 5.35 5.95

fast programming 3.91 4.35

tME

Mass erase time

(one or two banks) - 22.13 24.59 ms

Electrical characteristics STM32L475xx

128/204 DS10969 Rev 5

IDD

Average consumption

from VDD

Write mode 3.4 -

Erase mode 3.4 -

Maximum current (peak)

Write mode 7 (for 2 s) -

Erase mode 7 (for 41 s) -

1. Guaranteed by design.

Table 54. Flash memory endurance and data retention

Symbol Parameter Conditions Min(1)

1. Guaranteed by characterization results.

Unit

NEND Endurance TA = –40 to +105 °C 10 kcycles

tRET Data retention

1 kcycle(2) at TA = 85 °C

2. Cycling performed over the whole temperature range.

Years

1 kcycle(2) at TA = 105 °C 15

1 kcycle(2) at TA = 125 °C 7

10 kcycles(2) at TA = 55 °C 30

10 kcycles(2) at TA = 85 °C 15

10 kcycles(2) at TA = 105 °C 10

Table 53. Flash memory characteristics(1) (continued)

Symbol Parameter Conditions Typ Max Unit

DS10969 Rev 5 129/204

STM32L475xx Electrical characteristics

190

6.3.11 EMC characteristics

Susceptibility tests are performed on a sample basis during device characterization.

Functional EMS (electromagnetic susceptibility)

While a simple application is executed on the device (toggling 2 LEDs through I/O ports).

the device is stressed by two electromagnetic events until a failure occurs. The failure is

indicated by the LEDs:

•Electrostatic discharge (ESD) (positive and negative) is applied to all device pins until

a functional disturbance occurs. This test is compliant with the IEC 61000-4-2 standard.

•FTB: A Burst of Fast Transient voltage (positive and negative) is applied to VDD and

VSS through a 100 pF capacitor, until a functional disturbance occurs. This test is

compliant with the IEC 61000-4-4 standard.

A device reset allows normal operations to be resumed.

The test results are given in Table 55. They are based on the EMS levels and classes

defined in application note AN1709.

Designing hardened software to avoid noise problems

EMC characterization and optimization are performed at component level with a typical

application environment and simplified MCU software. It should be noted that good EMC

performance is highly dependent on the user application and the software in particular.

Therefore it is recommended that the user applies EMC software optimization and

prequalification tests in relation with the EMC level requested for his application.

Software recommendations

The software flowchart must include the management of runaway conditions such as:

•Corrupted program counter

•Unexpected reset

•Critical Data corruption (control registers...)

Table 55. EMS characteristics

Symbol Parameter Conditions Level/

Class

VFESD

Voltage limits to be applied on any I/O pin

to induce a functional disturbance

VDD = 3.3 V, TA = +25 °C,

fHCLK = 80 MHz,

conforming to IEC 61000-4-2

VEFTB

Fast transient voltage burst limits to be

applied through 100 pF on VDD and VSS

pins to induce a functional disturbance

VDD = 3.3 V, TA = +25 °C,

fHCLK = 80 MHz,

conforming to IEC 61000-4-4

Electrical characteristics STM32L475xx

130/204 DS10969 Rev 5

Prequalification trials

Most of the common failures (unexpected reset and program counter corruption) can be

reproduced by manually forcing a low state on the NRST pin or the Oscillator pins for 1

second.

To complete these trials, ESD stress can be applied directly on the device, over the range of

specification values. When unexpected behavior is detected, the software can be hardened

to prevent unrecoverable errors occurring (see application note AN1015).

Electromagnetic Interference (EMI)

The electromagnetic field emitted by the device are monitored while a simple application is

executed (toggling 2 LEDs through the I/O ports). This emission test is compliant with

IEC 61967-2 standard which specifies the test board and the pin loading.

6.3.12 Electrical sensitivity characteristics

Based on three different tests (ESD, LU) using specific measurement methods, the device is

stressed in order to determine its performance in terms of electrical sensitivity.

Electrostatic discharge (ESD)

Electrostatic discharges (a positive then a negative pulse separated by 1 second) are

applied to the pins of each sample according to each pin combination. The sample size

depends on the number of supply pins in the device (3 parts × (n+1) supply pins). This test

conforms to the ANSI/JEDEC standard.

Table 56. EMI characteristics

Symbol Parameter Conditions Monitored

frequency band

Max vs.

[fHSE/fHCLK]

Unit

[fHSE = 8 MHz /

fHCLK = 80 MHz]

SEMI Peak level

VDD = 3.6 V, TA = 25 °C,

LQFP100 package

compliant with

IEC 61967-2

0.1 MHz to 30 MHz -2

dBµV30 MHz to 130 MHz -9

130 MHz to 1 GHz 6

EMI Level 3.5 -

Table 57. ESD absolute maximum ratings

Symbol Ratings Conditions Class Maximum

value(1)

1. Guaranteed by characterization results.

Unit

VESD(HBM)

Electrostatic discharge

voltage (human body model)

TA = +25 °C, conforming

to ANSI/ESDA/JEDEC

JS-001

2 2000

VESD(CDM)

Electrostatic discharge

voltage (charge device

model)

TA = +25 °C,

conforming to ANSI/ESD

STM5.3.1

C3 250

DS10969 Rev 5 131/204

STM32L475xx Electrical characteristics

190

Static latch-up

Two complementary static tests are required on six parts to assess the latch-up

performance:

•A supply overvoltage is applied to each power supply pin.

•A current injection is applied to each input, output and configurable I/O pin.

These tests are compliant with EIA/JESD 78A IC latch-up standard.

6.3.13 I/O current injection characteristics

As a general rule, current injection to the I/O pins, due to external voltage below VSS or

above VDDIOx (for standard, 3.3 V-capable I/O pins) should be avoided during normal

product operation. However, in order to give an indication of the robustness of the

microcontroller in cases when abnormal injection accidentally happens, susceptibility tests

are performed on a sample basis during device characterization.

Functional susceptibility to I/O current injection

While a simple application is executed on the device, the device is stressed by injecting

current into the I/O pins programmed in floating input mode. While current is injected into

the I/O pin, one at a time, the device is checked for functional failures.

The failure is indicated by an out of range parameter: ADC error above a certain limit (higher

than 5 LSB TUE), out of conventional limits of induced leakage current on adjacent pins (out

of the -5 µA/+0 µA range) or other functional failure (for example reset occurrence or

oscillator frequency deviation).

The characterization results are given in Table 59.

Negative induced leakage current is caused by negative injection and positive induced

leakage current is caused by positive injection.

Table 58. Electrical sensitivities

Symbol Parameter Conditions Class

LU Static latch-up class TA = +105 °C conforming to JESD78A II level A

Table 59. I/O current injection susceptibility

Symbol Description

Functional

susceptibility

Unit

Negative

injection

Positive

injection

IINJ

Injected current on BOOT0 pin -0 0

mAInjected current on pins except PA4, PA5, BOOT0 -5 N/A(1)

1. Injection is not possible.

Injected current on PA4, PA5 pins -5 0

Electrical characteristics STM32L475xx

132/204 DS10969 Rev 5

6.3.14 I/O port characteristics

General input/output characteristics

Unless otherwise specified, the parameters given in Table 60 are derived from tests

performed under the conditions summarized in Table 23: General operating conditions. All

I/Os are designed as CMOS- and TTL-compliant (except BOOT0).

Table 60. I/O static characteristics

Symbol Parameter Conditions Min Typ Max Unit

VIL(1)

I/O input low level

voltage except

BOOT0

1.62 V<VDDIOx<3.6 V - - 0.3xVDDIOx(2)

I/O input low level

voltage except

BOOT0

1.62 V<VDDIOx<3.6 V - - 0.39xVDDIOx-0.06(3)

I/O input low level

voltage except

BOOT0

1.08 V<VDDIOx<1.62 V - - 0.43xVDDIOx-0.1(3)

BOOT0 I/O input low

level voltage 1.62 V<VDDIOx<3.6 V - - 0.17xVDDIOx(3)

VIH(1)

I/O input high level

voltage except

BOOT0

1.62 V<VDDIOx<3.6 V 0.7xVDDIOx(2) --

I/O input high level

voltage except

BOOT0

1.62 V<VDDIOx<3.6 V 0.49xVDDIOX+0.26(3) --

I/O input high level

voltage except

BOOT0

1.08 V<VDDIOx<1.62 V 0.61xVDDIOX+0.05(3) --

BOOT0 I/O input high

level voltage 1.62 V<VDDIOx<3.6 V 0.77xVDDIOX(3) --

Vhys(3)

TT_xx, FT_xxx and

NRST I/O input

hysteresis

1.62 V<VDDIOx<3.6 V - 200 -

BOOT0 I/O input

hysteresis 1.62 V<VDDIOx<3.6 V - 200 -

DS10969 Rev 5 133/204

STM32L475xx Electrical characteristics

190

Ilkg(4)

FT_xx input leakage

current(3)(5)

VIN 

Max(VDDXXX)(6)(7) - - ±100

Max(VDDXXX)  VIN 

Max(VDDXXX)+1 V(6)(7) --650

Max(VDDXXX)+1 V <

VIN  5.5 V(6)(7) --200

FT_u and PC3 I/O

VIN 

Max(VDDXXX)(6)(7) - - ±150

Max(VDDXXX)  VIN 

Max(VDDXXX)+1 V(6)(7) - - 2500(3)

Max(VDDXXX)+1 V <

VIN  5.5 V(6)(7) --250

TT_xx input leakage

current

VIN  Max(VDDXXX)(6) - - ±150

Max(VDDXXX)  VIN <

3.6 V(6) - - 2000(3)

RPU

Weak pull-up

equivalent resistor (8) VIN = VSS 25 40 55 k

RPD

Weak pull-down

equivalent resistor(8) VIN = VDDIOx 25 40 55 k

CIO I/O pin capacitance - - 5 - pF

1. Refer to Figure 20: I/O input characteristics.

2. Guaranteed by test in production.

3. Guaranteed by design.

4. This value represents the pad leakage of the IO itself. The total product pad leakage is provided by this formula:

ITotal_Ileak_max = 10 µA + [number of IOs where VIN is applied on the pad]  Ilkg(Max).

5. All FT_xx GPIOs except FT_u and PC3.

6. Max(VDDXXX) is the maximum value of all the I/O supplies. Refer to Table: Legend/Abbreviations used in the pinout table.

7. To sustain a voltage higher than Min(VDD, VDDA, VDDUSB) +0.3 V, the internal Pull-up and Pull-Down resistors must be

disabled.

8. Pull-up and pull-down resistors are designed with a true resistance in series with a switchable PMOS/NMOS. This

PMOS/NMOS contribution to the series resistance is minimal (~10% order).

Table 60. I/O static characteristics (continued)

Symbol Parameter Conditions Min Typ Max Unit

Electrical characteristics STM32L475xx

134/204 DS10969 Rev 5

All I/Os are CMOS- and TTL-compliant (no software configuration required). Their

characteristics cover more than the strict CMOS-technology or TTL parameters. The

coverage of these requirements is shown in Figure 20 for standard I/Os, and in Figure 20 for

5 V tolerant I/Os.

Figure 20. I/O input characteristics

Output driving current

The GPIOs (general purpose input/outputs) can sink or source up to ±8 mA, and sink or

source up to ± 20 mA (with a relaxed VOL/VOH).

In the user application, the number of I/O pins which can drive current must be limited to

respect the absolute maximum rating specified in Section 6.2:

•The sum of the currents sourced by all the I/Os on VDDIOx, plus the maximum

consumption of the MCU sourced on VDD, cannot exceed the absolute maximum rating

IVDD (see Table 20: Voltage characteristics).

•The sum of the currents sunk by all the I/Os on VSS, plus the maximum consumption of

the MCU sunk on VSS, cannot exceed the absolute maximum rating IVSS (see

Table 20: Voltage characteristics).

MSv37613V1

Tested in production CMOS requirement Vih min = 0.7xVDDIOx

Based on simulation Vih min = 0.61xV

DDIOx

+0.05 for 1.08<V

DDIOx

<1.62 or 0.49xV

DDIOx

+0.26 for V

DDIOx

>1.62

Based on simulation Vil max =0.43xV

DDIOx

-0.1 for 1.08<V

DDIOx

<1.62 or 0.39xV

DDIOx

-0.06 for V

DDIOx

>1.62

Tested in production CMOS requirement Vil max = 0.3xVdd

TTL requirement Vih min = 2V

TTL requirement Vil max = 0.8V

DS10969 Rev 5 135/204

STM32L475xx Electrical characteristics

190

Output voltage levels

Unless otherwise specified, the parameters given in the table below are derived from tests

performed under the ambient temperature and supply voltage conditions summarized in

Table 23: General operating conditions. All I/Os are CMOS- and TTL-compliant (FT OR TT

unless otherwise specified).

Input/output AC characteristics

The definition and values of input/output AC characteristics are given in Figure 21 and

Table 62, respectively.

Unless otherwise specified, the parameters given are derived from tests performed under

the ambient temperature and supply voltage conditions summarized in Table 23: General

operating conditions.

Table 61. Output voltage characteristics(1)

Symbol Parameter Conditions Min Max Unit

VOL Output low level voltage for an I/O pin CMOS port(2)

|IIO| = 8 mA

VDDIOx  2.7 V

-0.4

VOH Output high level voltage for an I/O pin VDDIOx-0.4 -

VOL(3) Output low level voltage for an I/O pin TTL port(2)

|IIO| = 8 mA

VDDIOx  2.7 V

-0.4

VOH(3) Output high level voltage for an I/O pin 2.4 -

VOL(3) Output low level voltage for an I/O pin |IIO| = 20 mA

VDDIOx  2.7 V

-1.3

VOH(3) Output high level voltage for an I/O pin VDDIOx-1.3 -

VOL(3) Output low level voltage for an I/O pin |IIO| = 4 mA

VDDIOx  1.62 V

-0.45

VOH(3) Output high level voltage for an I/O pin VDDIOx-0.45 -

VOL(3) Output low level voltage for an I/O pin |IIO| = 2 mA

1.62 V  VDDIOx  1.08 V

-0.35VDDIOx

VOH(3) Output high level voltage for an I/O pin 0.65VDDIOx -

VOLFM+

(3)

Output low level voltage for an FT I/O

pin in FM+ mode (FT I/O with "f"

option)

|IIO| = 20 mA

VDDIOx  2.7 V -0.4

|IIO| = 10 mA

VDDIOx  1.62 V -0.4

|IIO| = 2 mA

1.62 V  VDDIOx  1.08 V -0.4

1. The IIO current sourced or sunk by the device must always respect the absolute maximum rating specified in Table 20:

Voltage characteristics, and the sum of the currents sourced or sunk by all the I/Os (I/O ports and control pins) must always

respect the absolute maximum ratings IIO.

2. TTL and CMOS outputs are compatible with JEDEC standards JESD36 and JESD52.

3. Guaranteed by design.

Electrical characteristics STM32L475xx

136/204 DS10969 Rev 5

Table 62. I/O AC characteristics(1)(2)

Speed Symbol Parameter Conditions Min Max Unit

Fmax Maximum frequency

C=50 pF, 2.7 VVDDIOx3.6 V - 5

MHz

C=50 pF, 1.62 VVDDIOx2.7 V - 1

C=50 pF, 1.08 VVDDIOx1.62 V - 0.1

C=10 pF, 2.7 VVDDIOx3.6 V - 10

C=10 pF, 1.62 VVDDIOx2.7 V - 1.5

C=10 pF, 1.08 VVDDIOx1.62 V - 0.1

Tr/Tf Output rise and fall time

C=50 pF, 2.7 VVDDIOx3.6 V - 25

C=50 pF, 1.62 VVDDIOx2.7 V - 52

C=50 pF, 1.08 VVDDIOx1.62 V - 140

C=10 pF, 2.7 VVDDIOx3.6 V - 17

C=10 pF, 1.62 VVDDIOx2.7 V - 37

C=10 pF, 1.08 VVDDIOx1.62 V - 110

Fmax Maximum frequency

C=50 pF, 2.7 VVDDIOx3.6 V - 25

MHz

C=50 pF, 1.62 VVDDIOx2.7 V - 10

C=50 pF, 1.08 VVDDIOx1.62 V - 1

C=10 pF, 2.7 VVDDIOx3.6 V - 50

C=10 pF, 1.62 VVDDIOx2.7 V - 15

C=10 pF, 1.08 VVDDIOx1.62 V - 1

Tr/Tf Output rise and fall time

C=50 pF, 2.7 VVDDIOx3.6 V - 9

C=50 pF, 1.62 VVDDIOx2.7 V - 16

C=50 pF, 1.08 VVDDIOx1.62 V - 40

C=10 pF, 2.7 VVDDIOx3.6 V - 4.5

C=10 pF, 1.62 VVDDIOx2.7 V - 9

C=10 pF, 1.08 VVDDIOx1.62 V - 21

DS10969 Rev 5 137/204

STM32L475xx Electrical characteristics

190

Fmax Maximum frequency

C=50 pF, 2.7 VVDDIOx3.6 V - 50

MHz

C=50 pF, 1.62 VVDDIOx2.7 V - 25

C=50 pF, 1.08 VVDDIOx1.62 V - 5

C=10 pF, 2.7 VVDDIOx3.6 V - 100(3)

C=10 pF, 1.62 VVDDIOx2.7 V - 37.5

C=10 pF, 1.08 VVDDIOx1.62 V - 5

Tr/Tf Output rise and fall time

C=50 pF, 2.7 VVDDIOx3.6 V - 5.8

C=50 pF, 1.62 VVDDIOx2.7 V - 11

C=50 pF, 1.08 VVDDIOx1.62 V - 28

C=10 pF, 2.7 VVDDIOx3.6 V - 2.5

C=10 pF, 1.62 VVDDIOx2.7 V - 5

C=10 pF, 1.08 VVDDIOx1.62 V - 12

Fmax Maximum frequency

C=30 pF, 2.7 VVDDIOx3.6 V - 120(3)

MHz

C=30 pF, 1.62 VVDDIOx2.7 V - 50

C=30 pF, 1.08 VVDDIOx1.62 V - 10

C=10 pF, 2.7 VVDDIOx3.6 V - 180(3)

C=10 pF, 1.62 VVDDIOx2.7 V - 75

C=10 pF, 1.08 VVDDIOx1.62 V - 10

Tr/Tf Output rise and fall time

C=30 pF, 2.7 VVDDIOx3.6 V - 3.3

nsC=30 pF, 1.62 VVDDIOx2.7 V - 6

C=30 pF, 1.08 VVDDIOx1.62 V - 16

Fm+

Fmax Maximum frequency

C=50 pF, 1.6 VVDDIOx3.6 V

-1MHz

Tf Output fall time(4) -5ns

1. The I/O speed is configured using the OSPEEDRy[1:0] bits. The Fm+ mode is configured in the SYSCFG_CFGR1 register.

Refer to the RM0351 reference manual for a description of GPIO Port configuration register.

2. Guaranteed by design.

3. This value represents the I/O capability but the maximum system frequency is limited to 80 MHz.

4. The fall time is defined between 70% and 30% of the output waveform accordingly to I2C specification.

Table 62. I/O AC characteristics(1)(2) (continued)

Speed Symbol Parameter Conditions Min Max Unit

Electrical characteristics STM32L475xx

138/204 DS10969 Rev 5

Figure 21. I/O AC characteristics definition(1)

1. Refer to Table 62: I/O AC characteristics.

6.3.15 NRST pin characteristics

The NRST pin input driver uses the CMOS technology. It is connected to a permanent pull-

up resistor, RPU.

Unless otherwise specified, the parameters given in the table below are derived from tests

performed under the ambient temperature and supply voltage conditions summarized in

Table 23: General operating conditions.

MS32132V2

10%

50%

90% 10%

50%

90%

Maximum frequency is achieved if (t + t (≤ 2/3)T and if the duty cycle is (45-55%)

when loaded by the specified capacitance.

r(IO)out

tf(IO)out

Table 63. NRST pin characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VIL(NRST)

NRST input low level

voltage ---0.3VDDIOx

VIH(NRST)

NRST input high level

voltage -0.7VDDIOx --

Vhys(NRST)

NRST Schmitt trigger

voltage hysteresis --200-mV

RPU

Weak pull-up

equivalent resistor(2) VIN = VSS 25 40 55 k

VF(NRST) NRST input filtered

pulse ---70ns

VNF(NRST)

NRST input not filtered

pulse 1.71 V  VDD  3.6 V 350 - - ns

1. Guaranteed by design.

2. The pull-up is designed with a true resistance in series with a switchable PMOS. This PMOS contribution to the series

resistance is minimal (~10% order).

DS10969 Rev 5 139/204

STM32L475xx Electrical characteristics

190

Figure 22. Recommended NRST pin protection

1. The reset network protects the device against parasitic resets.

2. The user must ensure that the level on the NRST pin can go below the VIL(NRST) max level specified in

Table 63: NRST pin characteristics. Otherwise the reset will not be taken into account by the device.

3. The external capacitor on NRST must be placed as close as possible to the device.

6.3.16 Extended interrupt and event controller input (EXTI) characteristics

The pulse on the interrupt input must have a minimal length in order to guarantee that it is

detected by the event controller.

6.3.17 Analog switches booster

MS19878V3

RPU

VDD

Internal reset

External

reset circuit(1)

NRST(2)

Filter

0.1 μF

Table 64. EXTI input characteristics(1)

1. Guaranteed by design.

Symbol Parameter Conditions Min Typ Max Unit

PLEC Pulse length to event

controller -20--ns

Table 65. Analog switches booster characteristics(1)

1. Guaranteed by design.

Symbol Parameter Min Typ Max Unit

VDD Supply voltage 1.62 - 3.6 V

tSU(BOOST) Booster startup time - - 240 µs

IDD(BOOST)

Booster consumption for

1.62 V  VDD  2.0 V --250

µA

Booster consumption for

2.0 V  VDD  2.7 V --500

Booster consumption for

2.7 V  VDD  3.6 V --900

Electrical characteristics STM32L475xx

140/204 DS10969 Rev 5

6.3.18 Analog-to-Digital converter characteristics

Unless otherwise specified, the parameters given in Table 66 are preliminary values derived

from tests performed under ambient temperature, fPCLK frequency and VDDA supply voltage

conditions summarized in Table 23: General operating conditions.

Note: It is recommended to perform a calibration after each power-up.

Table 66. ADC characteristics(1) (2)

Symbol Parameter Conditions Min Typ Max Unit

VDDA Analog supply voltage - 1.62 - 3.6 V

VREF+ Positive reference voltage

VDDA  2 V 2 - VDDA V

VDDA < 2 V VDDA V

VREF-

Negative reference

voltage -V

SSA V

fADC ADC clock frequency

Range 1 0.14 - 80

MHz

Range 2 0.14 - 26

Sampling rate for FAST

channels

Resolution = 12 bits - - 5.33

Msps

Resolution = 10 bits - - 6.15

Resolution = 8 bits - - 7.27

Resolution = 6 bits - - 8.88

Sampling rate for SLOW

channels

Resolution = 12 bits - - 4.21

Resolution = 10 bits - - 4.71

Resolution = 8 bits - - 5.33

Resolution = 6 bits - - 6.15

fTRIG External trigger frequency

fADC = 80 MHz

Resolution = 12 bits - - 5.33 MHz

Resolution = 12 bits - - 15 1/fADC

VAIN (3) Conversion voltage

range(2) -0-V

REF+ V

RAIN External input impedance - - - 50 k

CADC

Internal sample and hold

capacitor --5-pF

tSTAB Power-up time - 1 conversion

cycle

tCAL Calibration time

fADC = 80 MHz 1.45 µs

-1161/f

ADC

tLATR

Trigger conversion

latency Regular and

injected channels without

conversion abort

CKMODE = 00 1.5 2 2.5

1/fADC

CKMODE = 01 - - 2.0

CKMODE = 10 - - 2.25

CKMODE = 11 - - 2.125

DS10969 Rev 5 141/204

STM32L475xx Electrical characteristics

190

The maximum value of RAIN can be found in Table 67: Maximum ADC RAIN.

tLATRINJ

Trigger conversion

latency Injected channels

aborting a regular

conversion

CKMODE = 00 2.5 3 3.5

1/fADC

CKMODE = 01 - - 3.0

CKMODE = 10 - - 3.25

CKMODE = 11 - - 3.125

tsSampling time

fADC = 80 MHz 0.03125 - 8.00625 µs

- 2.5 - 640.5 1/fADC

tADCVREG_STUP

ADC voltage regulator

start-up time ---20

µs

tCONV

Total conversion time

(including sampling time)

fADC = 80 MHz

Resolution = 12 bits 0.1875 - 8.1625 µs

Resolution = 12 bits

ts + 12.5 cycles for

successive approximation

= 15 to 653

1/fADC

IDDA(ADC) ADC consumption from

the VDDA supply

fs = 5 Msps - 730 830

µAfs = 1 Msps - 160 220

fs = 10 ksps - 16 50

IDDV_S(ADC)

ADC consumption from

the VREF+ single ended

mode

fs = 5 Msps - 130 160

µAfs = 1 Msps - 30 40

fs = 10 ksps - 0.6 2

IDDV_D(ADC)

ADC consumption from

the VREF+ differential

mode

fs = 5 Msps - 260 310

µAfs = 1 Msps - 60 70

fs = 10 ksps - 1.3 3

1. Guaranteed by design

2. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when

VDDA < 2.4V). It is disable when VDDA  2.4 V.

3. VREF+ can be internally connected to VDDA and VREF- can be internally connected to VSSA, depending on the package.

Refer to Section 4: Pinouts and pin description for further details.

Table 66. ADC characteristics(1) (2) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Electrical characteristics STM32L475xx

142/204 DS10969 Rev 5

Table 67. Maximum ADC RAIN(1)(2)

Resolution Sampling cycle

@80 MHz

Sampling time [ns]

@80 MHz

RAIN max (Ω)

Fast channels(3) Slow channels(4)

12 bits

2.5 31.25 100 N/A

6.5 81.25 330 100

12.5 156.25 680 470

24.5 306.25 1500 1200

47.5 593.75 2200 1800

92.5 1156.25 4700 3900

247.5 3093.75 12000 10000

640.5 8006.75 39000 33000

10 bits

2.5 31.25 120 N/A

6.5 81.25 390 180

12.5 156.25 820 560

24.5 306.25 1500 1200

47.5 593.75 2200 1800

92.5 1156.25 5600 4700

247.5 3093.75 12000 10000

640.5 8006.75 47000 39000

8 bits

2.5 31.25 180 N/A

6.5 81.25 470 270

12.5 156.25 1000 680

24.5 306.25 1800 1500

47.5 593.75 2700 2200

92.5 1156.25 6800 5600

247.5 3093.75 15000 12000

640.5 8006.75 50000 50000

6 bits

2.5 31.25 220 N/A

6.5 81.25 560 330

12.5 156.25 1200 1000

24.5 306.25 2700 2200

47.5 593.75 3900 3300

92.5 1156.25 8200 6800

247.5 3093.75 18000 15000

640.5 8006.75 50000 50000

1. Guaranteed by design.

DS10969 Rev 5 143/204

STM32L475xx Electrical characteristics

190

2. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when

VDDA < 2.4V). It is disable when VDDA  2.4 V.

3. Fast channels are: PC0, PC1, PC2, PC3, PA0.

4. Slow channels are: all ADC inputs except the fast channels.

Electrical characteristics STM32L475xx

144/204 DS10969 Rev 5

Table 68. ADC accuracy - limited test conditions 1(1)(2)(3)

Sym-

bol Parameter Conditions(4) Min Typ Max Unit

To t a l

unadjusted

error

ADC clock frequency 

80 MHz,

Sampling rate  5.33 Msps,

VDDA = VREF+ = 3 V,

TA = 25 °C

Single

ended

Fast channel (max speed) - 4 5

LSB

Slow channel (max speed) - 4 5

Differential

Fast channel (max speed) - 3.5 4.5

Slow channel (max speed) - 3.5 4.5

EO Offset

error

Single

ended

Fast channel (max speed) - 1 2.5

Slow channel (max speed) - 1 2.5

Differential

Fast channel (max speed) - 1.5 2.5

Slow channel (max speed) - 1.5 2.5

EG Gain error

Single

ended

Fast channel (max speed) - 2.5 4.5

Slow channel (max speed) - 2.5 4.5

Differential

Fast channel (max speed) - 2.5 3.5

Slow channel (max speed) - 2.5 3.5

Differential

linearity

error

Single

ended

Fast channel (max speed) - 1 1.5

Slow channel (max speed) - 1 1.5

Differential

Fast channel (max speed) - 1 1.2

Slow channel (max speed) - 1 1.2

Integral

linearity

error

Single

ended

Fast channel (max speed) - 1.5 2.5

Slow channel (max speed) - 1.5 2.5

Differential

Fast channel (max speed) - 1 2

Slow channel (max speed) - 1 2

ENOB

Effective

number of

bits

Single

ended

Fast channel (max speed) 10.4 10.5 -

bits

Slow channel (max speed) 10.4 10.5 -

Differential

Fast channel (max speed) 10.8 10.9 -

Slow channel (max speed) 10.8 10.9 -

SINAD

Signal-to-

noise and

distortion

ratio

Single

ended

Fast channel (max speed) 64.4 65 -

Slow channel (max speed) 64.4 65 -

Differential

Fast channel (max speed) 66.8 67.4 -

Slow channel (max speed) 66.8 67.4 -

SNR Signal-to-

noise ratio

Single

ended

Fast channel (max speed) 65 66 -

Slow channel (max speed) 65 66 -

Differential

Fast channel (max speed) 67 68 -

Slow channel (max speed) 67 68 -

DS10969 Rev 5 145/204

STM32L475xx Electrical characteristics

190

THD

To t a l

harmonic

distortion

ADC clock frequency 

80 MHz,

Sampling rate  5.33 Msps,

VDDA = VREF+ = 3 V,

TA = 25 °C

Single

ended

Fast channel (max speed) - -74 -73

Slow channel (max speed) - -74 -73

Differential

Fast channel (max speed) - -79 -76

Slow channel (max speed) - -79 -76

1. Guaranteed by design.

2. ADC DC accuracy values are measured after internal calibration.

3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this

significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a

Schottky diode (pin to ground) to analog pins which may potentially inject negative current.

4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when

VDDA < 2.4 V). It is disable when VDDA  2.4 V. No oversampling.

Table 68. ADC accuracy - limited test conditions 1(1)(2)(3) (continued)

Sym-

bol Parameter Conditions(4) Min Typ Max Unit

Electrical characteristics STM32L475xx

146/204 DS10969 Rev 5

Table 69. ADC accuracy - limited test conditions 2(1)(2)(3)

Sym-

bol Parameter Conditions(4) Min Typ Max Unit

To t a l

unadjusted

error

ADC clock frequency 

80 MHz,

Sampling rate  5.33 Msps,

2 V  VDDA

Single

ended

Fast channel (max speed) - 4 6.5

LSB

Slow channel (max speed) - 4 6.5

Differential

Fast channel (max speed) - 3.5 5.5

Slow channel (max speed) - 3.5 5.5

EO Offset

error

Single

ended

Fast channel (max speed) - 1 4.5

Slow channel (max speed) - 1 5

Differential

Fast channel (max speed) - 1.5 3

Slow channel (max speed) - 1.5 3

EG Gain error

Single

ended

Fast channel (max speed) - 2.5 6

Slow channel (max speed) - 2.5 6

Differential

Fast channel (max speed) - 2.5 3.5

Slow channel (max speed) - 2.5 3.5

Differential

linearity

error

Single

ended

Fast channel (max speed) - 1 1.5

Slow channel (max speed) - 1 1.5

Differential

Fast channel (max speed) - 1 1.2

Slow channel (max speed) - 1 1.2

Integral

linearity

error

Single

ended

Fast channel (max speed) - 1.5 3.5

Slow channel (max speed) - 1.5 3.5

Differential

Fast channel (max speed) - 1 3

Slow channel (max speed) - 1 2.5

ENOB

Effective

number of

bits

Single

ended

Fast channel (max speed) 10 10.5 -

bits

Slow channel (max speed) 10 10.5 -

Differential

Fast channel (max speed) 10.7 10.9 -

Slow channel (max speed) 10.7 10.9 -

SINAD

Signal-to-

noise and

distortion

ratio

Single

ended

Fast channel (max speed) 62 65 -

Slow channel (max speed) 62 65 -

Differential

Fast channel (max speed) 66 67.4 -

Slow channel (max speed) 66 67.4 -

SNR Signal-to-

noise ratio

Single

ended

Fast channel (max speed) 64 66 -

Slow channel (max speed) 64 66 -

Differential

Fast channel (max speed) 66.5 68 -

Slow channel (max speed) 66.5 68 -

DS10969 Rev 5 147/204

STM32L475xx Electrical characteristics

190

THD

To t a l

harmonic

distortion

ADC clock frequency 

80 MHz,

Sampling rate  5.33 Msps,

2 V  VDDA

Single

ended

Fast channel (max speed) - -74 -65

Slow channel (max speed) - -74 -67

Differential

Fast channel (max speed) - -79 -70

Slow channel (max speed) - -79 -71

1. Guaranteed by design.

2. ADC DC accuracy values are measured after internal calibration.

3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this

significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a

Schottky diode (pin to ground) to analog pins which may potentially inject negative current.

4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when

VDDA < 2.4 V). It is disable when VDDA  2.4 V. No oversampling.

Table 69. ADC accuracy - limited test conditions 2(1)(2)(3) (continued)

Sym-

bol Parameter Conditions(4) Min Typ Max Unit

Electrical characteristics STM32L475xx

148/204 DS10969 Rev 5

Table 70. ADC accuracy - limited test conditions 3(1)(2)(3)

Sym-

bol Parameter Conditions(4) Min Typ Max Unit

To t a l

unadjusted

error

ADC clock frequency 

80 MHz,

Sampling rate  5.33 Msps,

1.65 V  VDDA = VREF+ 

3.6 V,

Voltage scaling Range 1

Single

ended

Fast channel (max speed) - 5.5 7.5

LSB

Slow channel (max speed) - 4.5 6.5

Differential

Fast channel (max speed) - 4.5 7.5

Slow channel (max speed) - 4.5 5.5

EO Offset

error

Single

ended

Fast channel (max speed) - 2 5

Slow channel (max speed) - 2.5 5

Differential

Fast channel (max speed) - 2 3.5

Slow channel (max speed) - 2.5 3

EG Gain error

Single

ended

Fast channel (max speed) - 4.5 7

Slow channel (max speed) - 3.5 6

Differential

Fast channel (max speed) - 3.5 4

Slow channel (max speed) - 3.5 5

Differential

linearity

error

Single

ended

Fast channel (max speed) - 1.2 1.5

Slow channel (max speed) - 1.2 1.5

Differential

Fast channel (max speed) - 1 1.2

Slow channel (max speed) - 1 1.2

Integral

linearity

error

Single

ended

Fast channel (max speed) - 3 3.5

Slow channel (max speed) - 2.5 3.5

Differential

Fast channel (max speed) - 2 2.5

Slow channel (max speed) - 2 2.5

ENOB

Effective

number of

bits

Single

ended

Fast channel (max speed) 10 10.4 -

bits

Slow channel (max speed) 10 10.4 -

Differential

Fast channel (max speed) 10.6 10.7 -

Slow channel (max speed) 10.6 10.7 -

SINAD

Signal-to-

noise and

distortion

ratio

Single

ended

Fast channel (max speed) 62 64 -

Slow channel (max speed) 62 64 -

Differential

Fast channel (max speed) 65 66 -

Slow channel (max speed) 65 66 -

SNR Signal-to-

noise ratio

Single

ended

Fast channel (max speed) 63 65 -

Slow channel (max speed) 63 65 -

Differential

Fast channel (max speed) 66 67 -

Slow channel (max speed) 66 67 -

DS10969 Rev 5 149/204

STM32L475xx Electrical characteristics

190

THD

To t a l

harmonic

distortion

ADC clock frequency 

80 MHz,

Sampling rate  5.33 Msps,

1.65 V  VDDA = VREF+ 

3.6 V,

Voltage scaling Range 1

Single

ended

Fast channel (max speed) - -69 -67

Slow channel (max speed) - -71 -67

Differential

Fast channel (max speed) - -72 -71

Slow channel (max speed) - -72 -71

1. Guaranteed by design.

2. ADC DC accuracy values are measured after internal calibration.

3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this

significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a

Schottky diode (pin to ground) to analog pins which may potentially inject negative current.

4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when

VDDA < 2.4 V). It is disable when VDDA  2.4 V. No oversampling.

Table 70. ADC accuracy - limited test conditions 3(1)(2)(3) (continued)

Sym-

bol Parameter Conditions(4) Min Typ Max Unit

Electrical characteristics STM32L475xx

150/204 DS10969 Rev 5

Table 71. ADC accuracy - limited test conditions 4(1)(2)(3)

Sym-

bol Parameter Conditions(4) Min Typ Max Unit

To t a l

unadjusted

error

ADC clock frequency 

26 MHz,

1.65 V  VDDA = VREF+ 

3.6 V,

Voltage scaling Range 2

Single

ended

Fast channel (max speed) - 5 5.4

LSB

Slow channel (max speed) - 4 5

Differential

Fast channel (max speed) - 4 5

Slow channel (max speed) - 3.5 4.5

EO Offset

error

Single

ended

Fast channel (max speed) - 2 4

Slow channel (max speed) - 2 4

Differential

Fast channel (max speed) - 2 3.5

Slow channel (max speed) - 2 3.5

EG Gain error

Single

ended

Fast channel (max speed) - 4 4.5

Slow channel (max speed) - 4 4.5

Differential

Fast channel (max speed) - 3 4

Slow channel (max speed) - 3 4

Differential

linearity

error

Single

ended

Fast channel (max speed) - 1 1.5

Slow channel (max speed) - 1 1.5

Differential

Fast channel (max speed) - 1 1.2

Slow channel (max speed) - 1 1.2

Integral

linearity

error

Single

ended

Fast channel (max speed) - 2.5 3

Slow channel (max speed) - 2.5 3

Differential

Fast channel (max speed) - 2 2.5

Slow channel (max speed) - 2 2.5

ENOB

Effective

number of

bits

Single

ended

Fast channel (max speed) 10.2 10.5 -

bits

Slow channel (max speed) 10.2 10.5 -

Differential

Fast channel (max speed) 10.6 10.7 -

Slow channel (max speed) 10.6 10.7 -

SINAD

Signal-to-

noise and

distortion

ratio

Single

ended

Fast channel (max speed) 63 65 -

Slow channel (max speed) 63 65 -

Differential

Fast channel (max speed) 65 66 -

Slow channel (max speed) 65 66 -

SNR Signal-to-

noise ratio

Single

ended

Fast channel (max speed) 64 65 -

Slow channel (max speed) 64 65 -

Differential

Fast channel (max speed) 66 67 -

Slow channel (max speed) 66 67 -

DS10969 Rev 5 151/204

STM32L475xx Electrical characteristics

190

THD

To t a l

harmonic

distortion

ADC clock frequency 

26 MHz,

1.65 V  VDDA = VREF+ 

3.6 V,

Voltage scaling Range 2

Single

ended

Fast channel (max speed) - -71 -69

Slow channel (max speed) - -71 -69

Differential

Fast channel (max speed) - -73 -72

Slow channel (max speed) - -73 -72

1. Guaranteed by design.

2. ADC DC accuracy values are measured after internal calibration.

3. ADC accuracy vs. negative Injection Current: Injecting negative current on any analog input pins should be avoided as this

significantly reduces the accuracy of the conversion being performed on another analog input. It is recommended to add a

Schottky diode (pin to ground) to analog pins which may potentially inject negative current.

4. The I/O analog switch voltage booster is enable when VDDA < 2.4 V (BOOSTEN = 1 in the SYSCFG_CFGR1 when

VDDA < 2.4 V). It is disable when VDDA  2.4 V. No oversampling.

Table 71. ADC accuracy - limited test conditions 4(1)(2)(3) (continued)

Sym-

bol Parameter Conditions(4) Min Typ Max Unit

Electrical characteristics STM32L475xx

152/204 DS10969 Rev 5

Figure 23. ADC accuracy characteristics

Figure 24. Typical connection diagram using the ADC

1. Refer to Table 66: ADC characteristics for the values of RAIN and CADC.

2. Cparasitic represents the capacitance of the PCB (dependent on soldering and PCB layout quality) plus the

pad capacitance (refer to Table 60: I/O static characteristics for the value of the pad capacitance). A high

Cparasitic value will downgrade conversion accuracy. To remedy this, fADC should be reduced.

3. Refer to Table 60: I/O static characteristics for the values of Ilkg.

General PCB design guidelines

Power supply decoupling should be performed as shown in Figure 11: Power supply

scheme. The 10 nF capacitor should be ceramic (good quality) and it should be placed as

close as possible to the chip.

ET = total unajusted error: maximum deviation

between the actual and ideal transfer curves.

EO = offset error: maximum deviation

between the first actual transition and

the first ideal one.

EG = gain error: deviation between the last

ideal transition and the last actual one.

ED = differential linearity error: maximum

deviation between actual steps and the ideal ones.

EL = integral linearity error: maximum deviation

between any actual transition and the end point

correlation line.

(1) Example of an actual transfer curve

(2) The ideal transfer curve

(3) End point correlation line

4095

4094

4093

023456

17 4093 4094 4095 4096 VDDA

VSSA

1 LSB IDEAL

(1)

(3)

(2)

MS19880V2

MS33900V5

Sample and hold ADC converter

12-bit

converter

Cparasitic

(2) Ilkg

(3)

VTCADC

VDDA

RAIN

(1)

VAIN

AINx RADC

DS10969 Rev 5 153/204

STM32L475xx Electrical characteristics

190

6.3.19 Digital-to-Analog converter characteristics

Table 72. DAC characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDDA

Analog supply voltage for

DAC ON

DAC output buffer OFF (no resistive

load on DAC1_OUTx pin or internal

connection)

1.71 -

3.6

Other modes 1.80 -

VREF+ Positive reference voltage

DAC output buffer OFF (no resistive

load on DAC1_OUTx pin or internal

connection)

1.71 -

VDDA

Other modes 1.80 -

VREF- Negative reference voltage - VSSA

RLResistive load DAC output

buffer ON

connected to VSSA 5- -

k

connected to VDDA 25 - -

ROOutput Impedance DAC output buffer OFF 9.6 11.7 13.8 k

RBON

Output impedance sample

and hold mode, output

buffer ON

VDD = 2.7 V - - 2

k

VDD = 2.0 V - - 3.5

RBOFF

Output impedance sample

and hold mode, output

buffer OFF

VDD = 2.7 V - - 16.5

k

VDD = 2.0 V - - 18.0

CLCapacitive load

DAC output buffer ON - - 50 pF

CSH Sample and hold mode - 0.1 1 µF

VDAC_OUT

Voltage on DAC1_OUTx

output

DAC output buffer ON 0.2 - VREF+

– 0.2 V

DAC output buffer OFF 0 - VREF+

tSETTLING

Settling time (full scale: for

a 12-bit code transition

between the lowest and the

highest input codes when

DAC1_OUTx reaches final

value ±0.5LSB, ±1 LSB,

±2 LSB, ±4 LSB, ±8 LSB)

Normal mode

DAC output

buffer ON

CL  50 pF,

RL  5 k

±0.5 LSB - 1.7 3

µs

±1 LSB - 1.6 2.9

±2 LSB - 1.55 2.85

±4 LSB - 1.48 2.8

±8 LSB - 1.4 2.75

Normal mode DAC output buffer

OFF, ±1LSB, CL = 10 pF -2 2.5

tWAKEUP(2)

Wakeup time from off state

(setting the ENx bit in the

DAC Control register) until

final value ±1 LSB

Normal mode DAC output buffer ON

CL  50 pF, RL  5 k-4.2 7.5

µs

Normal mode DAC output buffer

OFF, CL  10 pF -2 5

PSRR VDDA supply rejection ratio Normal mode DAC output buffer ON

CL  50 pF, RL = 5 k, DC --80 -28dB

Electrical characteristics STM32L475xx

154/204 DS10969 Rev 5

TW_to_W

Minimal time between two

consecutive writes into the

DAC_DORx register to

guarantee a correct

DAC1_OUTx for a small

variation of the input code

(1 LSB)

DAC_MCR:MODEx[2:0] =

000 or 001

DAC_MCR:MODEx[2:0] =

010 or 011

CL  50 pF, RL  5 k

CL  10 pF

1.4

--µs

tSAMP

Sampling time in sample

and hold mode (code

transition between the

lowest input code and the

highest input code when

DAC1_OUTx reaches final

value ±1LSB)

DAC1_OUTx

pin connected

DAC output buffer

ON, CSH = 100 nF -0.7 3.5

DAC output buffer

OFF, CSH = 100 nF -10.5 18

DAC1_OUTx

pin not

connected

(internal

connection

only)

DAC output buffer

OFF -2 3.5µs

Ileak Output leakage current Sample and hold mode,

DAC1_OUTx pin connected -- -

(3) nA

CIint

Internal sample and hold

capacitor - 5.2 7 8.8 pF

tTRIM Middle code offset trim time DAC output buffer ON 50 - - µs

Voffset

Middle code offset for 1 trim

code step

VREF+ = 3.6 V - 1500 -

µV

VREF+ = 1.8 V - 750 -

IDDA(DAC) DAC consumption from

VDDA

DAC output

buffer ON

No load, middle

code (0x800) - 315 500

µA

No load, worst code

(0xF1C) - 450 670

DAC output

buffer OFF

No load, middle

code (0x800) -- 0.2

Sample and hold mode, CSH =

100 nF -

315 

Ton/ ( To n

+Toff)

(4)

670 

To n / ( To n

+Toff)

(4)

Table 72. DAC characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

DS10969 Rev 5 155/204

STM32L475xx Electrical characteristics

190

Figure 25. 12-bit buffered / non-buffered DAC

1. The DAC integrates an output buffer that can be used to reduce the output impedance and to drive external loads directly

without the use of an external operational amplifier. The buffer can be bypassed by configuring the BOFFx bit in the

DAC_CR register.

IDDV(DAC) DAC consumption from

VREF+

DAC output

buffer ON

No load, middle

code (0x800) - 185 240

µA

No load, worst code

(0xF1C) - 340 400

DAC output

buffer OFF

No load, middle

code (0x800) - 155 205

Sample and hold mode, buffer ON,

CSH = 100 nF, worst case -

185 

Ton/ ( To n

+Toff)

(4)

400 

To n / ( To n

+Toff)

(4)

Sample and hold mode, buffer OFF,

CSH = 100 nF, worst case -

155 

Ton/ ( To n

+Toff)

(4)

205 

To n / ( To n

+Toff)

(4)

1. Guaranteed by design.

2. In buffered mode, the output can overshoot above the final value for low input code (starting from min value).

3. Refer to Table 60: I/O static characteristics.

4. Ton is the Refresh phase duration. Toff is the Hold phase duration. Refer to RM0351 reference manual for more details.

Table 72. DAC characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

(1)

Buffer

12-bit

digital to

analog

converter

Buffered/non-buffered DAC

DACx_OUT

LOAD

ai17157d

Electrical characteristics STM32L475xx

156/204 DS10969 Rev 5

. Table 73. DAC accuracy(1)

Symbol Parameter Conditions Min Typ Max Unit

DNL Differential non

linearity (2)

DAC output buffer ON - - ±2

LSB

DAC output buffer OFF - - ±2

- monotonicity 10 bits guaranteed

INL Integral non

linearity(3)

DAC output buffer ON

CL  50 pF, RL  5 k--±4

DAC output buffer OFF

CL  50 pF, no RL --±4

Offset Offset error at

code 0x800(3)

DAC output buffer ON

CL  50 pF, RL  5 k

VREF+ = 3.6 V - - ±12

VREF+ = 1.8 V - - ±25

DAC output buffer OFF

CL  50 pF, no RL --±8

Offset1 Offset error at

code 0x001(4)

DAC output buffer OFF

CL  50 pF, no RL --±5

OffsetCal

Offset Error at

code 0x800

after calibration

DAC output buffer ON

CL  50 pF, RL  5 k

VREF+ = 3.6 V - - ±5

VREF+ = 1.8 V - - ±7

Gain Gain error(5)

DAC output buffer ON

CL  50 pF, RL  5 k--±0.5

DAC output buffer OFF

CL  50 pF, no RL --±0.5

TUE

Tota l

unadjusted

error

DAC output buffer ON

CL  50 pF, RL  5 k--±30

LSB

DAC output buffer OFF

CL  50 pF, no RL --±12

TUECal

Tota l

unadjusted

error after

calibration

DAC output buffer ON

CL  50 pF, RL  5 k--±23LSB

SNR Signal-to-noise

ratio

DAC output buffer ON

CL  50 pF, RL  5 k

1 kHz, BW 500 kHz

-71.2-

DAC output buffer OFF

CL  50 pF, no RL, 1 kHz

BW 500 kHz

-71.6-

THD Total harmonic

distortion

DAC output buffer ON

CL  50 pF, RL  5 k, 1 kHz --78-

DAC output buffer OFF

CL  50 pF, no RL, 1 kHz --79-

DS10969 Rev 5 157/204

STM32L475xx Electrical characteristics

190

SINAD

Signal-to-noise

and distortion

ratio

DAC output buffer ON

CL  50 pF, RL  5 k, 1 kHz -70.4-

DAC output buffer OFF

CL  50 pF, no RL, 1 kHz -71-

ENOB Effective

number of bits

DAC output buffer ON

CL  50 pF, RL  5 k, 1 kHz -11.4-

bits

DAC output buffer OFF

CL  50 pF, no RL, 1 kHz -11.5-

1. Guaranteed by design.

2. Difference between two consecutive codes - 1 LSB.

3. Difference between measured value at Code i and the value at Code i on a line drawn between Code 0 and last Code 4095.

4. Difference between the value measured at Code (0x001) and the ideal value.

5. Difference between ideal slope of the transfer function and measured slope computed from code 0x000 and 0xFFF when

buffer is OFF, and from code giving 0.2 V and (VREF+ – 0.2) V when buffer is ON.

Table 73. DAC accuracy(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Electrical characteristics STM32L475xx

158/204 DS10969 Rev 5

6.3.20 Voltage reference buffer characteristics

Table 74. VREFBUF characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDDA

Analog supply

voltage

Normal mode

VRS = 0 2.4 - 3.6

VRS = 1 2.8 - 3.6

Degraded mode(2) VRS = 0 1.65 - 2.4

VRS = 1 1.65 - 2.8

VREFBUF_

OUT

Voltage

reference

output

Normal mode

VRS = 0 2.046(3) 2.048 2.049(3)

VRS = 1 2.498(3) 2.5 2.502(3)

Degraded mode(2) VRS = 0 VDDA-150 mV - VDDA

VRS = 1 VDDA-150 mV - VDDA

TRIM Trim step

resolution ---±0.05±0.1%

CL Load capacitor - - 0.5 1 1.5 µF

esr

Equivalent

Serial Resistor

of Cload

----2

Iload

Static load

current ----4mA

Iline_reg Line regulation 2.8 V  VDDA  3.6 V

Iload = 500 µA - 200 1000

ppm/V

Iload = 4 mA - 100 500

Iload_reg

Load

regulation 500 A  Iload 4 mA Normal mode - 50 500 ppm/mA

TCoeff

Temperature

coefficient

-40 °C < TJ < +125 °C - -

Tcoeff_

vrefint +

50 ppm/ °C

0 °C < TJ < +50 °C - -

Tcoeff_

vrefint +

PSRR Power supply

rejection

DC 40 60 -

100 kHz 25 40 -

tSTART Start-up time

CL = 0.5 µF(4) - 300 350

µsCL = 1.1 µF(4) - 500 650

CL = 1.5 µF(4) - 650 800

IINRUSH

Control of

maximum DC

current drive

on VREFBUF_

OUT during

start-up phase

(5)

---8-mA

DS10969 Rev 5 159/204

STM32L475xx Electrical characteristics

190

IDDA(VREF

BUF)

VREFBUF

consumption

from VDDA

Iload = 0 µA - 16 25

µAIload = 500 µA - 18 30

Iload = 4 mA - 35 50

1. Guaranteed by design, unless otherwise specified.

2. In degraded mode, the voltage reference buffer can not maintain accurately the output voltage which will follow (VDDA -

drop voltage).

3. Guaranteed by test in production.

4. The capacitive load must include a 100 nF capacitor in order to cut-off the high frequency noise.

5. To correctly control the VREFBUF inrush current during start-up phase and scaling change, the VDDA voltage should be in

the range [2.4 V to 3.6 V] and [2.8 V to 3.6 V] respectively for VRS = 0 and VRS = 1.

Table 74. VREFBUF characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Electrical characteristics STM32L475xx

160/204 DS10969 Rev 5

6.3.21 Comparator characteristics

Table 75. COMP characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDDA Analog supply voltage - 1.62 - 3.6

VVIN

Comparator input voltage

range -0-V

DDA

VBG(2) Scaler input voltage - VREFINT

VSC Scaler offset voltage - - ±5 ±10 mV

IDDA(SCALER) Scaler static consumption

from VDDA

BRG_EN=0 (bridge disable) - 200 300 nA

BRG_EN=1 (bridge enable) - 0.8 1 µA

tSTART_SCALER Scaler startup time - - 100 200 µs

tSTART

Comparator startup time to

reach propagation delay

specification

High-speed

mode

VDDA  2.7 V - - 5

µs

VDDA < 2.7 V - - 7

Medium mode

VDDA  2.7 V - - 15

VDDA < 2.7 V - - 25

Ultra-low-power mode - - 80

tD(3)

Propagation delay for

200 mV step

with 100 mV overdrive

High-speed

mode

VDDA  2.7 V - 55 80

VDDA < 2.7 V - 65 100

Medium mode

VDDA  2.7 V - 0.55 0.9

µsVDDA < 2.7 V - 0.65 1

Ultra-low-power mode - 5 12

Voffset Comparator offset error Full common

mode range --±5±20mV

Vhys Comparator hysteresis

No hysteresis - 0 -

Low hysteresis 4 8 16

Medium hysteresis 8 15 30

High hysteresis 15 27 52

DS10969 Rev 5 161/204

STM32L475xx Electrical characteristics

190

6.3.22 Operational amplifiers characteristics

IDDA(COMP) Comparator consumption

from VDDA

Ultra-low-

power mode

Static - 400 600

With 50 kHz

±100 mV overdrive

square signal

-1200-

Medium mode

Static - 5 7

µA

With 50 kHz

±100 mV overdrive

square signal

-6-

High-speed

mode

Static - 70 100

With 50 kHz

±100 mV overdrive

square signal

-75-

Ibias

Comparator input bias

current ----

(4) nA

1. Guaranteed by design, unless otherwise specified.

2. Refer to Table 26: Embedded internal voltage reference.

3. Guaranteed by characterization results.

4. Mostly I/O leakage when used in analog mode. Refer to Ilkg parameter in Table 60: I/O static characteristics.

Table 75. COMP characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Table 76. OPAMP characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

VDDA

Analog supply

voltage(2) -1.8-3.6V

CMIR Common mode

input range -0-V

DDA V

VIOFFSET

Input offset

voltage

25 °C, No Load on output. - - ±1.5

All voltage/Temp. - - ±3

VIOFFSET

Input offset

voltage drift

Normal mode - ±5 - V/°C

Low-power mode - ±10 -

TRIMOFFSETP

TRIMLPOFFSETP

Offset trim step

at low common

input voltage

(0.1  VDDA)

--0.81.1

TRIMOFFSETN

TRIMLPOFFSETN

Offset trim step

at high common

input voltage

(0.9  VDDA)

--11.35

Electrical characteristics STM32L475xx

162/204 DS10969 Rev 5

ILOAD Drive current

Normal mode

VDDA  2 V

- - 500

µA

Low-power mode - - 100

ILOAD_PGA

Drive current in

PGA mode

Normal mode

VDDA  2 V

- - 450

Low-power mode - - 50

RLOAD

Resistive load

(connected to

VSSA or to

VDDA)

Normal mode

VDDA < 2 V

4--

k

Low-power mode 20 - -

RLOAD_PGA

Resistive load

in PGA mode

(connected to

VSSA or to

VDDA)

Normal mode

VDDA < 2 V

4.5 - -

Low-power mode 40 - -

CLOAD Capacitive load - - - 50 pF

CMRR Common mode

rejection ratio

Normal mode - -85 -

Low-power mode - -90 -

PSRR Power supply

rejection ratio

Normal mode CLOAD  50 pf,

RLOAD  4 k DC 70 85 -

Low-power mode CLOAD  50 pf,

RLOAD  20 k DC 72 90 -

GBW Gain Bandwidth

Product

Normal mode VDDA  2.4 V

(OPA_RANGE = 1)

550 1600 2200

kHz

Low-power mode 100 420 600

Normal mode VDDA < 2.4 V

(OPA_RANGE = 0)

250 700 950

Low-power mode 40 180 280

SR(3)

Slew rate

(from 10 and

90% of output

voltage)

Normal mode

VDDA  2.4 V

-700-

V/ms

Low-power mode - 180 -

Normal mode

VDDA < 2.4 V

-300-

Low-power mode - 80 -

AO Open loop gain

Normal mode 55 110 -

Low-power mode 45 110 -

VOHSAT(3) High saturation

voltage

Normal mode

Iload = max or Rload =

min Input at VDDA.

VDDA -

100 --

Low-power mode VDDA -

50 --

VOLSAT(3) Low saturation

voltage

Normal mode Iload = max or Rload =

min Input at 0.

- - 100

Low-power mode - - 50

mPhase margin

Normal mode - 74 -

Low-power mode - 66 -

Table 76. OPAMP characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

DS10969 Rev 5 163/204

STM32L475xx Electrical characteristics

190

GM Gain margin

Normal mode - 13 -

Low-power mode - 20 -

tWAKEUP

Wake up time

from OFF state.

Normal mode

CLOAD  50 pf,

RLOAD  4 k

follower

configuration

-510

µs

Low-power mode

CLOAD  50 pf,

RLOAD  20 k

follower

configuration

-1030

Ibias

OPAMP input

bias current

General purpose

input ----

(4) nA

PGA gain(3) Non inverting

gain value -

-2-

-4-

-8-

-16-

Rnetwork

R2/R1 internal

resistance

values in PGA

mode(5)

PGA Gain = 2 - 80/80 -

k/k

PGA Gain = 4 - 120/

40 -

PGA Gain = 8 - 140/

20 -

PGA Gain = 16 - 150/

10 -

Delta R

Resistance

variation (R1 or

R2)

--15-15%

PGA gain error PGA gain error - -1 - 1 %

PGA BW

PGA bandwidth

for different non

inverting gain

Gain = 2 - - GBW/

MHz

Gain = 4 - - GBW/

Gain = 8 - - GBW/

Gain = 16 - - GBW/

16 -

Table 76. OPAMP characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

Electrical characteristics STM32L475xx

164/204 DS10969 Rev 5

en Voltage noise

density

Normal mode at 1 kHz, Output

loaded with 4 k-500-

nV/Hz

Low-power mode at 1 kHz, Output

loaded with 20 k-600-

Normal mode at 10 kHz, Output

loaded with 4 k-180-

Low-power mode at 10 kHz, Output

loaded with 20 k-290-

IDDA(OPAMP)(3)

OPAMP

consumption

from VDDA

Normal mode no Load, quiescent

mode

- 120 260

µA

Low-power mode - 45 100

1. Guaranteed by design, unless otherwise specified.

2. The temperature range is limited to 0 °C-125 °C when VDDA is below 2 V

3. Guaranteed by characterization results.

4. Mostly I/O leakage, when used in analog mode. Refer to Ilkg parameter in Table 60: I/O static characteristics.

5. R2 is the internal resistance between OPAMP output and OPAMP inverting input. R1 is the internal resistance between

OPAMP inverting input and ground. The PGA gain =1+R2/R1

Table 76. OPAMP characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

DS10969 Rev 5 165/204

STM32L475xx Electrical characteristics

190

6.3.23 Temperature sensor characteristics

6.3.24 VBAT monitoring characteristics

Table 77. TS characteristics

Symbol Parameter Min Typ Max Unit

TL(1) VTS linearity with temperature - ±1 ±2 °C

Avg_Slope(2) Average slope 2.3 2.5 2.7 mV/°C

V30 Voltage at 30°C (±5 °C)(3) 0.742 0.76 0.785 V

tSTART

(TS_BUF)(1) Sensor Buffer Start-up time in continuous mode(4) -815µs

tSTART(1) Start-up time when entering in continuous mode(4) -70120µs

tS_temp(1) ADC sampling time when reading the temperature 5 - - µs

IDD(TS)(1) Temperature sensor consumption from VDD, when

selected by ADC -4.77 µA

1. Guaranteed by design.

2. Guaranteed by characterization results.

3. Measured at VDDA = 3.0 V ±10 mV. The V30 ADC conversion result is stored in the TS_CAL1 byte. Refer to Table 8:

Temperature sensor calibration values.

4. Continuous mode means Run/Sleep modes, or temperature sensor enable in Low-power run/Low-power sleep modes.

Table 78. VBAT monitoring characteristics

Symbol Parameter Min Typ Max Unit

R Resistor bridge for VBAT -39-k

QRatio on V

BAT measurement - 3 - -

Er(1)

1. Guaranteed by design.

Error on Q -10 - 10 %

tS_vbat(1) ADC sampling time when reading the VBAT 12 - - µs

Table 79. VBAT charging characteristics

Symbol Parameter Conditions Min Typ Max Unit

RBC

Battery

charging

resistor

VBRS = 0 - 5 -

k

VBRS = 1 - 1.5 -

Electrical characteristics STM32L475xx

166/204 DS10969 Rev 5

6.3.25 DFSDM characteristics

Unless otherwise specified, the parameters given in Table 80 for DFSDM are derived from

tests performed under the ambient temperature, fAPB2 frequency and VDD supply voltage

conditions summarized in Table 23: General operating conditions.

•Output speed is set to OSPEEDRy[1:0] = 10

•Capacitive load C = 30 pF

•Measurement points are done at CMOS levels: 0.5  VDD

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate

function characteristics (DFSDM1_CKINy, DFSDM1_DATINy, DFSDM1_CKOUT for

DFSDM).

Table 80. DFSDM characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fDFSDMCLK DFSDM clock - - - fSYSCLK

MHz

fCKIN

(1/TCKIN)

Input clock

frequency SPI mode (SITP[1:0] = 01) - - 20

(fDFSDMCLK/4)

fCKOUT

Output clock

frequency ---20MHz

DuCyCKOUT

Output clock

frequency

duty cycle

-455055%

twh(CKIN)

twl(CKIN)

Input clock

high and low

time

SPI mode (SITP[1:0] = 01),

External clock mode

(SPICKSEL[1:0] = 0)

TCKIN/2-0.5 TCKIN/2 -

tsu

Data input

setup time

SPI mode (SITP[1:0]=01),

External clock mode

(SPICKSEL[1:0] = 0)

0- -

Data input

hold time

SPI mode (SITP[1:0]=01),

External clock mode

(SPICKSEL[1:0] = 0)

2- -

TManchester

Manchester

data period

(recovered

clock period)

Manchester mode (SITP[1:0]

= 10 or 11),

Internal clock mode

(SPICKSEL[1:0]  0)

(CKOUT

DIV+1) 

TDFSDMCLK

-(2  CKOUTDIV)

 TDFSDMCLK

1. Guaranteed by characterization results.

DS10969 Rev 5 167/204

STM32L475xx Electrical characteristics

190

Figure 16: DFSDM timing diagram

6.3.26 Timer characteristics

The parameters given in the following tables are guaranteed by design.

Refer to Section 6.3.14: I/O port characteristics for details on the input/output alternate

function characteristics (output compare, input capture, external clock, PWM output).

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Electrical characteristics STM32L475xx

168/204 DS10969 Rev 5

Table 81. TIMx(1) characteristics

1. TIMx, is used as a general term in which x stands for 1,2,3,4,5,6,7,8,15,16 or 17.

Symbol Parameter Conditions Min Max Unit

tres(TIM) Timer resolution time

-1-t

TIMxCLK

fTIMxCLK = 80 MHz 12.5 - ns

fEXT

Timer external clock

frequency on CH1 to CH4

-0f

TIMxCLK/2 MHz

fTIMxCLK = 80 MHz 0 40 MHz

ResTIM Timer resolution

TIMx (except TIM2

and TIM5) -16

bit

TIM2 and TIM5 - 32

tCOUNTER

16-bit counter clock

period

- 1 65536 tTIMxCLK

fTIMxCLK = 80 MHz 0.0125 819.2 µs

tMAX_COUNT

Maximum possible count

with 32-bit counter

- - 65536 × 65536 tTIMxCLK

fTIMxCLK = 80 MHz - 53.68 s

Table 82. IWDG min/max timeout period at 32 kHz (LSI)(1)

1. The exact timings still depend on the phasing of the APB interface clock versus the LSI clock so that there

is always a full RC period of uncertainty.

Prescaler divider PR[2:0] bits Min timeout RL[11:0]=

0x000

Max timeout RL[11:0]=

0xFFF Unit

/4 0 0.125 512

/8 1 0.250 1024

/16 2 0.500 2048

/32 3 1.0 4096

/64 4 2.0 8192

/128 5 4.0 16384

/256 6 or 7 8.0 32768

Table 83. WWDG min/max timeout value at 80 MHz (PCLK)

Prescaler WDGTB Min timeout value Max timeout value Unit

1 0 0.0512 3.2768

2 1 0.1024 6.5536

4 2 0.2048 13.1072

8 3 0.4096 26.2144

DS10969 Rev 5 169/204

STM32L475xx Electrical characteristics

190

6.3.27 Communication interfaces characteristics

I2C interface characteristics

The I2C interface meets the timings requirements of the I2C-bus specification and user

manual rev. 03 for:

•Standard-mode (Sm): with a bit rate up to 100 kbit/s

•Fast-mode (Fm): with a bit rate up to 400 kbit/s

•Fast-mode Plus (Fm+): with a bit rate up to 1 Mbit/s.

The I2C timings requirements are guaranteed by design when the I2C peripheral is properly

configured (refer to RM0351 reference manual).

The SDA and SCL I/O requirements are met with the following restrictions: the SDA and

SCL I/O pins are not “true” open-drain. When configured as open-drain, the PMOS

connected between the I/O pin and VDDIOx is disabled, but is still present. Only FT_f I/O pins

support Fm+ low level output current maximum requirement. Refer to Section 6.3.14: I/O

port characteristics for the I2C I/Os characteristics.

All I2C SDA and SCL I/Os embed an analog filter. Refer to the table below for the analog

filter characteristics:

Table 84. I2C analog filter characteristics(1)

1. Guaranteed by design.

Symbol ParameterMinMaxUnit

tAF

Maximum pulse width of spikes

that are suppressed by the analog

filter

50(2)

2. Spikes with widths below tAF(min) are filtered.

260(3)

3. Spikes with widths above tAF(max) are not filtered

Electrical characteristics STM32L475xx

170/204 DS10969 Rev 5

SPI characteristics

Unless otherwise specified, the parameters given in Tabl e 85 for SPI are derived from tests

performed under the ambient temperature, fPCLKx frequency and supply voltage conditions

summarized in Table 23: General operating conditions.

•Output speed is set to OSPEEDRy[1:0] = 11

•Capacitive load C = 30 pF

•Measurement points are done at CMOS levels: 0.5  VDD

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate

function characteristics (NSS, SCK, MOSI, MISO for SPI).

Table 85. SPI characteristics(1)

Symbol Parameter Conditions Min Typ Max Unit

fSCK

1/tc(SCK)

SPI clock frequency

Master mode receiver/full duplex

2.7 < VDD < 3.6 V

Voltage Range 1

MHz

Master mode receiver/full duplex

1.71 < VDD < 3.6 V

Voltage Range 1

Master mode transmitter

1.71 < VDD < 3.6 V

Voltage Range 1

Slave mode receiver

1.71 < VDD < 3.6 V

Voltage Range 1

Slave mode transmitter/full duplex

2.7 < VDD < 3.6 V

Voltage Range 1

26(2)

Slave mode transmitter/full duplex

1.71 < VDD < 3.6 V

Voltage Range 1

16(2)

Voltage Range 2 13

tsu(NSS) NSS setup time Slave mode, SPI prescaler = 2 4TPCLK --ns

th(NSS) NSS hold time Slave mode, SPI prescaler = 2 2TPCLK --ns

tw(SCKH)

tw(SCKL)

SCK high and low time Master mode TPCLK-2 TPCLK TPCLK+2 ns

tsu(MI) Data input setup time

Master mode 3.5 - -

tsu(SI) Slave mode 3 - -

th(MI) Data input hold time

Master mode 6.5 - -

th(SI) Slave mode 3 - -

ta(SO) Data output access time Slave mode 9 - 36 ns

tdis(SO) Data output disable time Slave mode 9 - 16 ns

DS10969 Rev 5 171/204

STM32L475xx Electrical characteristics

190

Figure 26. SPI timing diagram - slave mode and CPHA = 0

tv(SO) Data output valid time

Slave mode 2.7 < VDD < 3.6 V

Voltage Range 1 -12.519

Slave mode 1.71 < VDD < 3.6 V

Voltage Range 1 -12.530

Slave mode 1.71 < VDD < 3.6 V

Voltage Range 2 -12.533

tv(MO) Master mode - 2.5 12.5

th(SO) Data output hold time

Slave mode 9 - -

th(MO) Master mode 0 - -

1. Guaranteed by characterization results.

2. Maximum frequency in Slave transmitter mode is determined by the sum of tv(SO) and tsu(MI) which has to fit into SCK low or

high phase preceding the SCK sampling edge. This value can be achieved when the SPI communicates with a master

having tsu(MI) = 0 while Duty(SCK) = 50 %.

Table 85. SPI characteristics(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

MSv41658V1

NSS input

CPHA=0

CPOL=0

SCK input

CPHA=0

CPOL=1

MISO output

MOSI input

tsu(SI)

th(SI)

tw(SCKL)

tw(SCKH)

tc(SCK)

tr(SCK)

th(NSS)

tdis(SO)

tsu(NSS)

ta(SO) tv(SO)

Next bits IN

Last bit OUT

First bit IN

First bit OUT Next bits OUT

th(SO) tf(SCK)

Last bit IN

Electrical characteristics STM32L475xx

172/204 DS10969 Rev 5

Figure 27. SPI timing diagram - slave mode and CPHA = 1

1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.

Figure 28. SPI timing diagram - master mode

1. Measurement points are done at CMOS levels: 0.3 VDD and 0.7 VDD.

MSv41659V1

NSS input

CPHA=1

CPOL=0

SCK input

CPHA=1

CPOL=1

MISO output

MOSI input

tsu(SI) th(SI)

tw(SCKL)

tw(SCKH)

tsu(NSS)

tc(SCK)

ta(SO) tv(SO)

First bit OUT Next bits OUT

Next bits IN

Last bit OUT

th(SO) tr(SCK)

tf(SCK) th(NSS)

tdis(SO)

First bit IN Last bit IN

ai14136c

SCK Output

CPHA= 0

MOSI

OUTPUT

MISO

INP UT

CPHA= 0

LSB OUT

LSB IN

CPOL=0

CPOL=1

B I T1 OUT

NSS input

tc(SCK)

tw(SCKH)

tw(SCKL)

tr(SCK)

tf(SCK)

th(MI)

High

SCK Output

CPHA=1

CPOL=0

CPOL=1

tsu(MI)

tv(MO) th(MO)

MSB IN BIT6 IN

MSB OUT

DS10969 Rev 5 173/204

STM32L475xx Electrical characteristics

190

Quad SPI characteristics

Unless otherwise specified, the parameters given in Table 86 and Table 87 for Quad SPI

are derived from tests performed under the ambient temperature, fAHB frequency and VDD

supply voltage conditions summarized in Table 23: General operating conditions, with the

following configuration:

•Output speed is set to OSPEEDRy[1:0] = 11

•Capacitive load C = 15 or 20 pF

•Measurement points are done at CMOS levels: 0.5  VDD

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate

function characteristics.

Table 86. Quad SPI characteristics in SDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

FCK

1/t(CK)

Quad SPI clock frequency

1.71 < VDD< 3.6 V, CLOAD = 20 pF

Voltage Range 1 --40

MHz

1.71 < VDD< 3.6 V, CLOAD = 15 pF

Voltage Range 1 --48

2.7 < VDD< 3.6 V, CLOAD = 15 pF

Voltage Range 1 --60

1.71 < VDD < 3.6 V CLOAD = 20 pF

Voltage Range 2 --26

tw(CKH) Quad SPI clock high and

low time fAHBCLK= 48 MHz, presc=0

t(CK)/2-2 - t(CK)/2

tw(CKL) t(CK)/2 - t(CK)/2+2

ts(IN) Data input setup time

Voltage Range 1 4 - -

Voltage Range 2 3.5 - -

th(IN) Data input hold time

Voltage Range 1 5.5 - -

Voltage Range 2 6.5 - -

tv(OUT) Data output valid time

Voltage Range 1 - 2.5 5

Voltage Range 2 - 3 5

th(OUT) Data output hold time

Voltage Range 1 1.5 - -

Voltage Range 2 2 - -

1. Guaranteed by characterization results.

Electrical characteristics STM32L475xx

174/204 DS10969 Rev 5

Figure 29. Quad SPI timing diagram - SDR mode

Figure 30. Quad SPI timing diagram - DDR mode

Table 87. QUADSPI characteristics in DDR mode(1)

Symbol Parameter Conditions Min Typ Max Unit

FCK

1/t(CK)

Quad SPI clock

frequency

1.71 < VDD < 3.6 V, CLOAD = 20 pF

Voltage Range 1 --40

MHz

2 < VDD < 3.6 V, CLOAD = 20 pF

Voltage Range 1 --48

1.71 < VDD < 3.6 V, CLOAD = 15 pF

Voltage Range 1 --48

1.71 < VDD < 3.6 V CLOAD = 20 pF

Voltage Range 2 --26

tw(CKH) Quad SPI clock high

and low time fAHBCLK = 48 MHz, presc=0

t(CK)/2-2 - t(CK)/2

tw(CKL) t(CK)/2 - t(CK)/2+2

tsf(IN);tsr(IN) Data input setup time

Voltage Range 1 and 2

3.5 - -

thf(IN); thr(IN) Data input hold time 6.5 - -

tvf(OUT);tvr(OUT) Data output valid time

Voltage Range 1

11 12

Voltage Range 2 15 19

thf(OUT); thr(OUT) Data output hold time

Voltage Range 1 6 -

Voltage Range 2 8 -

1. Guaranteed by characterization results.

MSv36878V1

Data output D0 D1 D2

Clock

Data input D0 D1 D2

t(CK) tw(CKH) tw(CKL)

tr(CK) tf(CK)

ts(IN) th(IN)

tv(OUT) th(OUT)

MSv36879V1

Data output D0 D2 D4

Clock

Data input D0 D2 D4

t(CK) tw(CKH) tw(CKL)

tr(CK) tf(CK)

tsf(IN) thf(IN)

tvf(OUT) thr(OUT)

D1 D3 D5

tvr(OUT) thf(OUT)

tsr(IN) thr(IN)

DS10969 Rev 5 175/204

STM32L475xx Electrical characteristics

190

SAI characteristics

Unless otherwise specified, the parameters given in Table 88 for SAI are derived

from tests performed under the ambient temperature, fPCLKx frequency and VDD

supply voltage conditions summarized inTable 23: General operating conditions, with

the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 10

•Capacitive load C = 30 pF

•Measurement points are done at CMOS levels: 0.5  VDD

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output

alternate function characteristics (CK,SD,FS).

Table 88. SAI characteristics(1)

Symbol Parameter Conditions Min Max Unit

fMCLK SAI Main clock output - - 50 MHz

fCK SAI clock frequency(2)

Master transmitter

2.7  VDD  3.6

Voltage Range 1

-18.5

MHz

Master transmitter

1.71  VDD  3.6

Voltage Range 1

-12.5

Master receiver

Voltage Range 1 -25

Slave transmitter

2.7  VDD  3.6

Voltage Range 1

-22.5

Slave transmitter

1.71  VDD  3.6

Voltage Range 1

-14.5

Slave receiver

Voltage Range 1 -25

Voltage Range 2 - 12.5

tv(FS) FS valid time

Master mode

2.7  VDD  3.6 -22

Master mode

1.71  VDD  3.6 -40

th(FS) FS hold time Master mode 10 - ns

tsu(FS) FS setup time Slave mode 1 - ns

th(FS) FS hold time Slave mode 2 - ns

tsu(SD_A_MR) Data input setup time

Master receiver 2.5 -

tsu(SD_B_SR) Slave receiver 3 -

th(SD_A_MR) Data input hold time

Master receiver 8 -

th(SD_B_SR) Slave receiver 4 -

Electrical characteristics STM32L475xx

176/204 DS10969 Rev 5

Figure 31. SAI master timing waveforms

tv(SD_B_ST) Data output valid time

Slave transmitter (after enable edge)

2.7  VDD  3.6 -22

Slave transmitter (after enable edge)

1.71  VDD  3.6 -34

th(SD_B_ST) Data output hold time Slave transmitter (after enable edge) 10 - ns

tv(SD_A_MT) Data output valid time

Master transmitter (after enable edge)

2.7  VDD  3.6 -27

Master transmitter (after enable edge)

1.71  VDD  3.6 -40

th(SD_A_MT) Data output hold time Master transmitter (after enable edge) 10 - ns

1. Guaranteed by characterization results.

2. APB clock frequency must be at least twice SAI clock frequency.

Table 88. SAI characteristics(1) (continued)

Symbol Parameter Conditions Min Max Unit

MS32771V1

SAI_SCK_X

SAI_FS_X

(output)

1/fSCK

SAI_SD_X

(transmit)

tv(FS)

Slot n

SAI_SD_X

(receive)

th(FS)

Slot n+2

tv(SD_MT) th(SD_MT)

Slot n

tsu(SD_MR) th(SD_MR)

DS10969 Rev 5 177/204

STM32L475xx Electrical characteristics

190

Figure 32. SAI slave timing waveforms

SDMMC characteristics

Unless otherwise specified, the parameters given in Table 89 for SDIO are derived from

tests performed under the ambient temperature, fPCLKx frequency and VDD supply voltage

conditions summarized in Table 23: General operating conditions, with the following

configuration:

•Output speed is set to OSPEEDRy[1:0] = 11

•Capacitive load C = 30 pF

•Measurement points are done at CMOS levels: 0.5  VDD

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output

characteristics.

Table 89. SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V(1)

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 4/3 -

tW(CKL) Clock low time fPP = 50 MHz 8 10 - ns

tW(CKH) Clock high time fPP = 50 MHz 8 10 - ns

CMD, D inputs (referenced to CK) in MMC and SD HS mode

tISU Input setup time HS fPP = 50 MHz 2 - - ns

tIH Input hold time HS fPP = 50 MHz 4.5 - - ns

CMD, D outputs (referenced to CK) in MMC and SD HS mode

tOV Output valid time HS fPP = 50 MHz - 12 14 ns

tOH Output hold time HS fPP = 50 MHz 9 - - ns

CMD, D inputs (referenced to CK) in SD default mode

tISUD Input setup time SD fPP = 50 MHz 2 - - ns

tIHD Input hold time SD fPP = 50 MHz 4.5 - - ns

MS32772V1

SAI_SCK_X

SAI_FS_X

(input)

SAI_SD_X

(transmit)

tsu(FS)

Slot n

SAI_SD_X

(receive)

tw(CKH_X) th(FS)

Slot n+2

tv(SD_ST) th(SD_ST)

Slot n

tsu(SD_SR)

tw(CKL_X)

th(SD_SR)

1/fSCK

Electrical characteristics STM32L475xx

178/204 DS10969 Rev 5

Figure 33. SDIO high-speed mode

CMD, D outputs (referenced to CK) in SD default mode

tOVD Output valid default time SD fPP = 50 MHz - 4.5 5 ns

tOHD Output hold default time SD fPP = 50 MHz 0 - - ns

1. Guaranteed by characterization results.

Table 90. eMMC dynamic characteristics, VDD = 1.71 V to 1.9 V(1)(2)

1. Guaranteed by characterization results.

2. CLOAD = 20pF.

Symbol Parameter Conditions Min Typ Max Unit

fPP Clock frequency in data transfer mode - 0 - 50 MHz

- SDIO_CK/fPCLK2 frequency ratio - - - 4/3 -

tW(CKL) Clock low time fPP = 50 MHz 8 10 - ns

tW(CKH) Clock high time fPP = 50 MHz 8 10 - ns

CMD, D inputs (referenced to CK) in eMMC mode

tISU Input setup time HS fPP = 50 MHz 0 - - ns

tIH Input hold time HS fPP = 50 MHz 5 - - ns

CMD, D outputs (referenced to CK) in eMMC mode

tOV Output valid time HS fPP = 50 MHz - 13.5 15.5 ns

tOH Output hold time HS fPP = 50 MHz 9 - - ns

Table 89. SD / MMC dynamic characteristics, VDD=2.7 V to 3.6 V(1) (continued)

Symbol Parameter Conditions Min Typ Max Unit

DS10969 Rev 5 179/204

STM32L475xx Electrical characteristics

190

Figure 34. SD default mode

USB OTG full speed (FS) characteristics

The STM32L475xx USB interface is fully compliant with the USB specification version 2.0

and is USB-IF certified (for Full-speed device operation).

Note: When VBUS sensing feature is enabled, PA9 should be left at its default state (floating

input), not as alternate function. A typical 200 µA current consumption of the sensing block

(current to voltage conversion to determine the different sessions) can be observed on PA9

when the feature is enabled.

ai14888

D, CMD

(output)

tOVD tOHD

Table 91. USB OTG DC electrical characteristics

Symbol Parameter Conditions Min(1) Typ Max(1) Unit

VDDUSB

USB OTG full speed transceiver

operating voltage -3.0

(2) -3.6V

VDI(3) Differential input sensitivity Over VCM range 0.2 - -

VCM(3) Differential input common mode

range Includes VDI range 0.8 - 2.5

VSE(3) Single ended receiver input

threshold -0.8-2.0

VOL Static output level low RL of 1.5 k to 3.6 V(4) --0.3

VOH Static output level high RL of 15 k to VSS(4) 2.8 - 3.6

RPD(3) Pull down resistor on PA11,

PA12 (USB_FS_DP/DM) VIN = VDD 14.25 - 24.8 k

RPU(3)

Pull Up Resistor on PA12

(USB_FS_DP) VIN = VSS, during idle 0.9 1.25 1.575 k

Pull Up Resistor on PA12

(USB_FS_DP)

VIN = VSS during

reception 1.425 2.25 3.09 k

Pull Up Resistor on PA10

(OTG_FS_ID) ---14.5k

1. All the voltages are measured from the local ground potential.

2. The USB OTG full speed transceiver functionality is ensured down to 2.7 V but not the full USB full speed

electrical characteristics which are degraded in the 2.7-to-3.0 V VDD voltage range.

3. Guaranteed by design.

4. RL is the load connected on the USB OTG full speed drivers.

Electrical characteristics STM32L475xx

180/204 DS10969 Rev 5

Figure 35. USB OTG timings – definition of data signal rise and fall time

ai14137b

Cross over

points

Differential

data lines

VCRS

VSS

tftr

Table 92. USB OTG electrical characteristics(1)

Driver characteristics

Symbol Parameter Conditions Min Max Unit

trLS Rise time in LS(2) CL = 200 to 600 pF 75 300 ns

tfLS Fall time in LS(2) CL = 200 to 600 pF 75 300 ns

trfmLS Rise/ fall time matching in LS tr/tf80 125 %

trFS Rise time in FS(2) CL = 50 pF 4 20 ns

tfFS Fall time in FS(2) CL = 50 pF 4 20 ns

trfmFS Rise/ fall time matching in FS tr/tf90 111 %

VCRS Output signal crossover voltage (LS/FS) - 1.3 2.0 V

ZDRV Output driver impedance(3) Driving high or low 28 44 

1. Guaranteed by design.

2. Measured from 10% to 90% of the data signal. For more detailed informations, please refer to USB

Specification - Chapter 7 (version 2.0).

3. No external termination series resistors are required on DP (D+) and DM (D-) pins since the matching

impedance is included in the embedded driver.

Table 93. USB BCD DC electrical characteristics(1)

Symbol Parameter Conditions Min. Typ. Max. Unit

IDD(USBBCD)

Primary detection mode

consumption ---300A

Secondary detection mode

consumption ---300A

RDAT_LKG Data line leakage

resistance -300--k

VDAT_LKG Data line leakage voltage - 0.0 - 3.6 V

RDCP_DAT Dedicated charging port

resistance across D+/D- ---200

VLGC_HI Logic high - 2.0 - 3.6 V

VLGC_LOW Logic low - - - 0.8 V

VLGC Logic threshold - 0.8 - 2.0 V

DS10969 Rev 5 181/204

STM32L475xx Electrical characteristics

190

CAN (controller area network) interface

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output alternate

function characteristics (CAN_TX and CAN_RX).

VDAT_REF Data detect voltage - 0.25 - 0.4 V

VDP_SRC D+ source voltage - 0.5 - 0.7 V

VDM_SRC D- source voltage - 0.5 - 0.7 V

IDP_SINK D+ sink current - 25 - 175 A

IDM_SINK D- sink current - 25 - 175 A

1. Guaranteed by design.

Table 93. USB BCD DC electrical characteristics(1) (continued)

Symbol Parameter Conditions Min. Typ. Max. Unit

Electrical characteristics STM32L475xx

182/204 DS10969 Rev 5

6.3.28 FSMC characteristics

Unless otherwise specified, the parameters given in Table 94 to Table 99 for the FMC

interface are derived from tests performed under the ambient temperature, fHCLK frequency

and VDD supply voltage conditions summarized in Table 23, with the following configuration:

•Output speed is set to OSPEEDRy[1:0] = 11

•Capacitive load C = 30 pF

•Measurement points are done at CMOS levels: 0.5VDD

Refer to Section 6.3.14: I/O port characteristics for more details on the input/output

characteristics.

Asynchronous waveforms and timings

Figure 36 and Figure 37 represent asynchronous waveforms and Table 94 through Table 97

provide the corresponding timings. The results shown in these tables are obtained with the

following FMC configuration:

•AddressSetupTime = 0x1

•AddressHoldTime = 0x1

•DataSetupTime = 0x1 (except for asynchronous NWAIT mode, DataSetupTime = 0x5)

•BusTurnAroundDuration = 0x0

In all timing tables, the THCLK is the HCLK clock period.

DS10969 Rev 5 183/204

STM32L475xx Electrical characteristics

190

Figure 36. Asynchronous multiplexed PSRAM/NOR read waveforms

NBL

Data

FMC_ NBL[1:0]

FMC_ AD[15:0]

v(BL_NE)

th(Data_NE)

Address

FMC_ A[25:16]

v(A_NE)

FMC_NWE

tv(A_NE)

MS32755V1

Address

FMC_NADV

tv(NADV_NE)

tw(NADV)

tsu(Data_NE)

h(AD_NADV)

FMC_ NE

FMC_NOE

tw(NE)

tw(NOE)

tv(NOE_NE) th(NE_NOE)

th(A_NOE)

th(BL_NOE)

tsu(Data_NOE) th(Data_NOE)

FMC_NWAIT

tsu(NWAIT_NE)

th(NE_NWAIT)

Electrical characteristics STM32L475xx

184/204 DS10969 Rev 5

Table 94. Asynchronous multiplexed PSRAM/NOR read timings(1)(2)

1. CL = 30 pF.

2. Guaranteed by characterization results.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 3THCLK-0.5 3THCLK+2

tv(NOE_NE) FMC_NEx low to FMC_NOE low 2THCLK-0.5 2THCLK+0.5

tw(NOE) FMC_NOE low time THCLK+0.5 THCLK+1

th(NE_NOE) FMC_NOE high to FMC_NE high hold time 0 -

tv(A_NE) FMC_NEx low to FMC_A valid - 3

tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 1

tw(NADV) FMC_NADV low time THCLK-0.5 THCLK+1

th(AD_NADV)

FMC_AD(address) valid hold time after

FMC_NADV high 0 -

th(A_NOE) Address hold time after FMC_NOE high THCLK-0.5 -

th(BL_NOE) FMC_BL time after FMC_NOE high 0 -

tv(BL_NE) FMC_NEx low to FMC_BL valid - 2

tsu(Data_NE) Data to FMC_NEx high setup time THCLK-2 -

tsu(Data_NOE) Data to FMC_NOE high setup time THCLK-1 -

th(Data_NE) Data hold time after FMC_NEx high 0 -

th(Data_NOE) Data hold time after FMC_NOE high 0 -

Table 95. Asynchronous multiplexed PSRAM/NOR read-NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed by characterization results.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 8THCLK+2 8THCLK+4

tw(NOE) FMC_NWE low time 5THCLK-1 5THCLK+1.5

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 5THCLK+1.5 -

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK+1 -

DS10969 Rev 5 185/204

STM32L475xx Electrical characteristics

190

Figure 37. Asynchronous multiplexed PSRAM/NOR write waveforms

NBL

Data

FMC_ NEx

FMC_ NBL[1:0]

FMC_ AD[15:0]

v(BL_NE)

th(Data_NWE)

FMC_NOE

Address

FMC_ A[25:16]

v(A_NE)

tw(NWE)

FMC_NWE

tv(NWE_NE) th(NE_NWE)

th(A_NWE)

th(BL_NWE)

tv(A_NE)

tw(NE)

MS32756V1

Address

FMC_NADV

tv(NADV_NE)

tw(NADV)

tv(Data_NADV)

h(AD_NADV)

FMC_NWAIT

tsu(NWAIT_NE)

th(NE_NWAIT)

Electrical characteristics STM32L475xx

186/204 DS10969 Rev 5

Synchronous waveforms and timings

Figure 38 and Figure 39 represent synchronous waveforms and Table 98 and

Table 99 provide the corresponding timings. The results shown in these tables are

obtained with the following FMC configuration:

•BurstAccessMode = FMC_BurstAccessMode_Enable

•MemoryType = FMC_MemoryType_CRAM

•WriteBurst = FMC_WriteBurst_Enable

•CLKDivision = 1

•DataLatency = 1 for NOR Flash; DataLatency = 0 for PSRAM

Table 96. Asynchronous multiplexed PSRAM/NOR write timings(1)(2)

1. CL = 30 pF.

2. Guaranteed by characterization results.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 4THCLK-0.5 4THCLK+2

tv(NWE_NE) FMC_NEx low to FMC_NWE low THCLK-0.5 THCLK+1

tw(NWE) FMC_NWE low time 2xTHCLK-1.5 2xTHCLK+1.

th(NE_NWE) FMC_NWE high to FMC_NE high hold time THCLK-0.5 -

tv(A_NE) FMC_NEx low to FMC_A valid - 3

tv(NADV_NE) FMC_NEx low to FMC_NADV low 0 1

tw(NADV) FMC_NADV low time THCLK-0.5 THCLK+1

th(AD_NADV)

FMC_AD(adress) valid hold time after

FMC_NADV high THCLK-2 -

th(A_NWE) Address hold time after FMC_NWE high THCLK-1 -

th(BL_NWE) FMC_BL hold time after FMC_NWE high THCLK+0.5 -

tv(BL_NE) FMC_NEx low to FMC_BL valid - 1.5

tv(Data_NADV) FMC_NADV high to Data valid - THCLK +4

th(Data_NWE) Data hold time after FMC_NWE high THCLK +0.5 -

Table 97. Asynchronous multiplexed PSRAM/NOR write-NWAIT timings(1)(2)

1. CL = 30 pF.

2. Guaranteed by characterization results.

Symbol Parameter Min Max Unit

tw(NE) FMC_NE low time 9THCLK-0.5 9THCLK+2

tw(NWE) FMC_NWE low time 7THCLK-1.5 7THCLK+1.5

tsu(NWAIT_NE) FMC_NWAIT valid before FMC_NEx high 6THCLK+2 -

th(NE_NWAIT) FMC_NEx hold time after FMC_NWAIT invalid 4THCLK-3 -

DS10969 Rev 5 187/204

STM32L475xx Electrical characteristics

190

In all timing tables, the THCLK is the HCLK clock period.

Figure 38. Synchronous multiplexed NOR/PSRAM read timings

FMC_CLK

FMC_NEx

FMC_NADV

FMC_A[25:16]

FMC_NOE

FMC_AD[15:0] AD[15:0] D1 D2

FMC_NWAIT

(WAITCFG = 1b,

WAITPOL + 0b)

FMC_NWAIT

(WAITCFG = 0b,

WAITPOL + 0b)

tw(CLK) tw(CLK)

Data latency = 0

BUSTURN = 0

td(CLKL-NExL) td(CLKH-NExH)

td(CLKL-NADVL)

td(CLKL-AV)

td(CLKL-NADVH)

td(CLKH-AIV)

td(CLKL-NOEL) td(CLKH-NOEH)

td(CLKL-ADV)

td(CLKL-ADIV)

tsu(ADV-CLKH)

th(CLKH-ADV)

tsu(ADV-CLKH) th(CLKH-ADV)

tsu(NWAITV-CLKH) th(CLKH-NWAITV)

MS32757V1

Electrical characteristics STM32L475xx

188/204 DS10969 Rev 5

Table 98. Synchronous multiplexed NOR/PSRAM read timings(1)(2)

1. CL = 30 pF.

2. Guaranteed by characterization results.

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK-1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2

td(CLKH_NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK+0.5 -

td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2.5

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 1 -

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 3.5

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK -

td(CLKL-NOEL) FMC_CLK low to FMC_NOE low - 1.5

td(CLKH-NOEH) FMC_CLK high to FMC_NOE high THCLK+1 -

td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 4

td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -

tsu(ADV-CLKH) FMC_A/D[15:0] valid data before FMC_CLK high 0 -

th(CLKH-ADV) FMC_A/D[15:0] valid data after FMC_CLK high 2.5 -

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 0 -

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -

DS10969 Rev 5 189/204

STM32L475xx Electrical characteristics

190

Figure 39. Synchronous multiplexed PSRAM write timings

MSv38001V1

FMC_CLK

FMC_NEx

FMC_NADV

FMC_A[25:16]

FMC_NWE

FMC_AD[15:0] AD[15:0] D1 D2

FMC_NWAIT

(WAITCFG = 0b,

WAITPOL + 0b)

tw(CLK) tw(CLK)

Data latency = 0

BUSTURN = 0

td(CLKL-NExL) td(CLKH-NExH)

td(CLKL-NADVL)

td(CLKL-AV)

td(CLKL-NADVH)

td(CLKH-AIV)

td(CLKH-NWEH)

td(CLKL-NWEL)

td(CLKH-NBLH)

td(CLKL-ADV)

td(CLKL-ADIV) td(CLKL-Data)

tsu(NWAITV-CLKH) th(CLKH-NWAITV)

td(CLKL-Data)

FMC_NBL

Electrical characteristics STM32L475xx

190/204 DS10969 Rev 5

6.3.29 SWPMI characteristics

The Single Wire Protocol Master Interface (SWPMI) and the associated SWPMI_IO

transceiver are compliant with the ETSI TS 102 613 technical specification.

Table 99. Synchronous multiplexed PSRAM write timings(1)(2)

1. CL = 30 pF.

2. Guaranteed by characterization results.

Symbol Parameter Min Max Unit

tw(CLK) FMC_CLK period 2THCLK-1 -

td(CLKL-NExL) FMC_CLK low to FMC_NEx low (x=0..2) - 2

td(CLKH-NExH) FMC_CLK high to FMC_NEx high (x= 0…2) THCLK+0.5 -

td(CLKL-NADVL) FMC_CLK low to FMC_NADV low - 2.5

td(CLKL-NADVH) FMC_CLK low to FMC_NADV high 1 -

td(CLKL-AV) FMC_CLK low to FMC_Ax valid (x=16…25) - 3.5

td(CLKH-AIV) FMC_CLK high to FMC_Ax invalid (x=16…25) THCLK -

td(CLKL-NWEL) FMC_CLK low to FMC_NWE low - 2

td(CLKH-NWEH) FMC_CLK high to FMC_NWE high THCLK+1 -

td(CLKL-ADV) FMC_CLK low to FMC_AD[15:0] valid - 4

td(CLKL-ADIV) FMC_CLK low to FMC_AD[15:0] invalid 0 -

td(CLKL-DATA) FMC_A/D[15:0] valid data after FMC_CLK low - 5.5

td(CLKL-NBLL) FMC_CLK low to FMC_NBL low - 2.5

td(CLKH-NBLH) FMC_CLK high to FMC_NBL high THCLK+1 -

tsu(NWAIT-CLKH) FMC_NWAIT valid before FMC_CLK high 0 -

th(CLKH-NWAIT) FMC_NWAIT valid after FMC_CLK high 4 -

Table 100. SWPMI electrical characteristics(1)

1. Guaranteed by design.

Symbol Parameter Conditions Min Typ Max Unit

tSWPSTART SWPMI regulator startup time SWP Class B

2.7 V  VDD  3,3V - - 300 s

tSWPBIT SWP bit duration

VCORE voltage range 1 500 - -

VCORE voltage range 2 620 - -

DS10969 Rev 5 191/204

STM32L475xx Package information

200

7 Package information

In order to meet environmental requirements, ST offers these devices in different grades of

ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®

specifications, grade definitions and product status are available at: www.st.com.

ECOPACK® is an ST trademark.

7.1 LQFP100 package information

Figure 40. LQFP - 100 pins, 14 x 14 mm low-profile quad flat package outline

1. Drawing is not to scale.

IDENTIFICATION

PIN 1

GAUGE PLANE

0.25 mm

SEATING PLANE

ccc C

125

100

75 51

1L_ME_V5

Package information STM32L475xx

192/204 DS10969 Rev 5

Table 101. LQFP - 100 pins, 14 x 14 mm low-profile quad flat package

mechanical data

Symbol

millimeters inches(1)

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630

A1 0.050 - 0.150 0.0020 - 0.0059

A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

b 0.170 0.220 0.270 0.0067 0.0087 0.0106

c 0.090 - 0.200 0.0035 - 0.0079

D 15.800 16.000 16.200 0.6220 0.6299 0.6378

D1 13.800 14.000 14.200 0.5433 0.5512 0.5591

D3 - 12.000 - - 0.4724 -

E 15.800 16.000 16.200 0.6220 0.6299 0.6378

E1 13.800 14.000 14.200 0.5433 0.5512 0.5591

E3 - 12.000 - - 0.4724 -

e - 0.500 - - 0.0197 -

L 0.450 0.600 0.750 0.0177 0.0236 0.0295

L1 - 1.000 - - 0.0394 -

k 0.0° 3.5° 7.0° 0.0° 3.5° 7.0°

ccc - - 0.080 - - 0.0031

DS10969 Rev 5 193/204

STM32L475xx Package information

200

Figure 41. LQFP - 100 pins, 14 x 14 mm low-profile quad flat

recommended footprint

1. Dimensions are expressed in millimeters.

Device marking

The following figure gives an example of topside marking orientation versus pin 1 identifier

location.

The printed markings may differ depending on the supply chain.

Other optional marking or inset/upset marks, which identify the parts throughout supply

chain operations, are not indicated below.

75 51

5076 0.5

0.3

16.7 14.3

100 26

12.3

1.2

16.7

ai14906c

Package information STM32L475xx

194/204 DS10969 Rev 5

Figure 42. LQFP100 marking (package top view)

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified

and therefore not approved for use in production. ST is not responsible for any consequences resulting

from such use. In no event will ST be liable for the customer using any of these engineering samples in

production. ST’s Quality department must be contacted prior to any decision to use these engineering

samples to run a qualification activity.

MSv37698V1

Revision code

Product identification(1)

Date code

Pin 1

indentifier

STM32L475

VGT6 3

YWW

Optional gate mark

DS10969 Rev 5 195/204

STM32L475xx Package information

200

7.2 LQFP64 package information

Figure 43. LQFP - 64 pins, 10 x 10 mm low-profile quad flat package outline

1. Drawing is not to scale.

Table 102. LQFP - 64 pins, 10 x 10 mm low-profile quad flat

package mechanical data

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

A - - 1.600 - - 0.0630

A1 0.050 - 0.150 0.0020 - 0.0059

A2 1.350 1.400 1.450 0.0531 0.0551 0.0571

b 0.170 0.220 0.270 0.0067 0.0087 0.0106

c 0.090 - 0.200 0.0035 - 0.0079

D - 12.000 - - 0.4724 -

D1 - 10.000 - - 0.3937 -

D3 - 7.500 - - 0.2953 -

E - 12.000 - - 0.4724 -

E1 - 10.000 - - 0.3937 -

5W_ME_V3

SEATING PLANE

ccc C

IDENTIFICATION

PIN 1

116

GAUGE PLANE

0.25 mm

Package information STM32L475xx

196/204 DS10969 Rev 5

Figure 44. LQFP - 64 pins, 10 x 10 mm low-profile quad flat package

recommended footprint

1. Dimensions are expressed in millimeters.

Device marking

The following figure gives an example of topside marking orientation versus pin 1 identifier

location.

The printed markings may differ depending on the supply chain.

Other optional marking or inset/upset marks, which identify the parts throughout supply

chain operations, are not indicated below.

E3 - 7.500 - - 0.2953 -

e - 0.500 - - 0.0197 -

K 0°3.5°7° 0°3.5°7°

L 0.450 0.600 0.750 0.0177 0.0236 0.0295

L1 - 1.000 - - 0.0394 -

ccc - - 0.080 - - 0.0031

1. Values in inches are converted from mm and rounded to 4 decimal digits.

Table 102. LQFP - 64 pins, 10 x 10 mm low-profile quad flat

package mechanical data (continued)

Symbol

millimeters inches(1)

Min Typ Max Min Typ Max

64 17

116

1.2

0.3

10.3

12.7

10.3

0.5

7.8

12.7

ai14909c

DS10969 Rev 5 197/204

STM32L475xx Package information

200

Figure 45. LQFP64 marking (package top view)

1. Parts marked as ES or E or accompanied by an Engineering Sample notification letter are not yet qualified

and therefore not approved for use in production. ST is not responsible for any consequences resulting

from such use. In no event will ST be liable for the customer using any of these engineering samples in

production. ST’s Quality department must be contacted prior to any decision to use these engineering

samples to run a qualification activity.

MSv38000V2

Date code

Pin 1 identifier

STM32L475

RGT6

Product identification(1)

Revision code

Y WW

Package information STM32L475xx

198/204 DS10969 Rev 5

7.3 Thermal characteristics

The maximum chip junction temperature (TJmax) must never exceed the values given in

Table 22: General operating conditions.

The maximum chip-junction temperature, TJ max, in degrees Celsius, may be calculated

using the following equation:

TJ max = TA max + (PD max x JA)

Where:

•TA max is the maximum ambient temperature in °C,

•JA is the package junction-to-ambient thermal resistance, in °C/W,

•PD max is the sum of PINT max and PI/O max (PD max = PINT max + PI/Omax),

•PINT max is the product of all IDDXXX and VDDXXX, expressed in Watts. This is the

maximum chip internal power.

PI/O max represents the maximum power dissipation on output pins where:

PI/O max =  (VOL × IOL) +  ((VDDIOx – VOH) × IOH),

taking into account the actual VOL / IOL and VOH / IOH of the I/Os at low and high level in the

application.

7.3.1 Reference document

JESD51-2 Integrated Circuits Thermal Test Method Environment Conditions - Natural

Convection (Still Air). Available from www.jedec.org

7.3.2 Selecting the product temperature range

When ordering the microcontroller, the temperature range is specified in the ordering

information scheme shown in Section 8: Ordering information.

Each temperature range suffix corresponds to a specific guaranteed ambient temperature at

maximum dissipation and, to a specific maximum junction temperature.

As applications do not commonly use the STM32L475xx at maximum dissipation, it is useful

to calculate the exact power consumption and junction temperature to determine which

temperature range will be best suited to the application.

The following examples show how to calculate the temperature range needed for a given

application.

Table 103. Package thermal characteristics

Symbol Parameter Value Unit

JA

Thermal resistance junction-ambient

LQFP64 - 10 × 10 mm / 0.5 mm pitch 45

°C/W

Thermal resistance junction-ambient

LQFP100 - 14 × 14mm 42

DS10969 Rev 5 199/204

STM32L475xx Package information

200

Example 1: High-performance application

Assuming the following application conditions:

Maximum ambient temperature TAmax = 82 °C (measured according to JESD51-2),

IDDmax = 50 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low

level with IOL = 8 mA, VOL= 0.4 V and maximum 8 I/Os used at the same time in output

at low level with IOL = 20 mA, VOL= 1.3 V

PINTmax = 50 mA × 3.5 V= 175 mW

PIOmax = 20 × 8 mA × 0.4 V + 8 × 20 mA × 1.3 V = 272 mW

This gives: PINTmax = 175 mW and PIOmax = 272 mW:

PDmax = 175 + 272 = 447 mW

Using the values obtained in Table 103 TJmax is calculated as follows:

– For LQFP64, 45 °C/W

TJmax = 82 °C + (45 °C/W × 447 mW) = 82 °C + 20.115 °C = 102.115 °C

This is within the range of the suffix 6 version parts (–40 < TJ < 105 °C) see Section 8:

Ordering information.

In this case, parts must be ordered at least with the temperature range suffix 6 (see Part

numbering).

Note: With this given PDmax we can find the TAmax allowed for a given device temperature range

(order code suffix 6 or 7).

Suffix 6: TAmax = TJmax - (45°C/W × 447 mW) = 105-20.115 = 84.885 °C

Suffix 7: TAmax = TJmax - (45°C/W × 447 mW) = 125-20.115 = 104.885 °C

Example 2: High-temperature application

Using the same rules, it is possible to address applications that run at high ambient

temperatures with a low dissipation, as long as junction temperature TJ remains within the

specified range.

Assuming the following application conditions:

Maximum ambient temperature TAmax = 100 °C (measured according to JESD51-2),

IDDmax = 20 mA, VDD = 3.5 V, maximum 20 I/Os used at the same time in output at low

level with IOL = 8 mA, VOL= 0.4 V

PINTmax = 20 mA × 3.5 V= 70 mW

PIOmax = 20 × 8 mA × 0.4 V = 64 mW

This gives: PINTmax = 70 mW and PIOmax = 64 mW:

PDmax = 70 + 64 = 134 mW

Thus: PDmax = 134 mW

Using the values obtained in Table 103 TJmax is calculated as follows:

– For LQFP64, 45 °C/W

TJmax = 100 °C + (45 °C/W × 134 mW) = 100 °C + 6.03 °C = 106.03 °C

This is above the range of the suffix 6 version parts (–40 < TJ < 105 °C).

In this case, parts must be ordered at least with the temperature range suffix 7 (see

Section 8: Ordering information) unless we reduce the power dissipation in order to be able

to use suffix 6 parts.

Package information STM32L475xx

200/204 DS10969 Rev 5

Refer to Figure 46 to select the required temperature range (suffix 6 or 7) according to your

ambient temperature or power requirements.

Figure 46. LQFP64 PD max vs. TA

MSv32143V1

600

100

200

300

400

500

700

65 75 85 95 105 115 125 135

Suffix 6

Suffix 7

PD (mW)

TA (°C)

DS10969 Rev 5 201/204

STM32L475xx Ordering information

203

8 Ordering information

For a list of available options (speed, package, etc.) or for further information on any aspect

of this device, please contact your nearest ST sales office.

Table 104. STM32L475xx ordering information scheme

Example: STM32 L 475 R G T 6 TR

Device family

STM32 = Arm® based 32-bit microcontroller

Product type

L = ultra-low-power

Device subfamily

475: STM32L475xx

Pin count

R = 64 pins

V = 100 pins

Flash memory size

C = 256 KB of Flash memory

E = 512 KB of Flash memory

G = 1 MB of Flash memory

Package

T = LQFP ECOPACK®2

Temperature range

6 = Industrial temperature range, -40 to 85 °C (105 °C junction)

7 = Industrial temperature range, -40 to 105 °C (125 °C junction)

3 = Industrial temperature range, -40 to 125 °C (130 °C junction)

Packing

TR = tape and reel

xxx = programmed parts

Revision history STM32L475xx
202/204 DS10969 Rev 5
9 Revision history
           Table 105. Document revision history 
Date Revision Changes
05-Feb-2016 1 Initial release.
03-Mar-2016 2
Removed NAND from supported memories on cover 
page.
Added ADC 3 impacting:
Cover page
Section 2: Description.
Table 2: STM32L475xx family device features and 
peripheral counts.
Table 5: Functionalities depending on the working 
mode.
Section 3.15.1: Temperature sensor.
Section 3.15.3: VBAT battery voltage monitoring.
Table 16: STM32L475xx pin definitions.
Section 2: Description.
Updated Section 3.26: Universal 
synchronous/asynchronous receiver transmitter 
(USART).
Updated Section 3.27: Low-power universal 
asynchronous receiver transmitter (LPUART).
Added Table 53: Wakeup time using USART/LPUART.
Updated Table 65: EMS characteristics.
Updated Table 66: EMI characteristics.
09-Oct-2017 3
Replaced reference manual reference RM0395 by 
RM0351 in the whole document.
Replaced DFSDM by DFSDM1 and DFSDMx by 
DFSDM1_FLTx in the whole document.
Updated Section 3.11: Clocks and startup.
Updated Section 3.14: Interrupts and events.
Added Table 10: DFSDM1 implementation.
Added IRTIM in Table 6: STM32L475xx peripherals 
interconnect matrix, Section 3.23.5: Infrared interface 
(IRTIM).
Updated baudrate in Section 3.26: Universal 
synchronous/asynchronous receiver transmitter 
(USART).
Updated introduction of Section 6.2: Absolute maximum 
ratings.
Updated TBD in Table 26: Embedded internal voltage 
reference.
Updated Section 6.3.5: Supply current characteristics.
Updated Table 44: Wakeup time using 
USART/LPUART.
Updated footnote of Table 59: I/O current injection 
susceptibility.

DS10969 Rev 5 203/204
STM32L475xx Revision history
203
          
09-Oct-2017 3
(continued)
Updated Table 60: I/O static characteristics.
Added footnote to Figure 22: Recommended NRST pin 
protection.
Added Section 6.3.16: Extended interrupt and event 
controller input (EXTI) characteristics.
Updated Table 65: Analog switches booster 
characteristics.
Updated Section 6.3.18: Analog-to-Digital converter 
characteristics.
Updated Section 6.3.19: Digital-to-Analog converter 
characteristics.
Added Ibias parameter on Table 75: COMP 
characteristics.
Updated Section : USB OTG full speed (FS) 
characteristics.
Added Section 6.3.29: SWPMI characteristics.
Updated Section 7: Package information.
23-Apr-2018 4
Updated DAC terminology in all the document for 
clarification: single DAC instance (= DAC1) with 2 output 
channels.
Updated Table 72: DAC characteristics.
Added power up/down sequence requirements in 
Section 3.9.1: Power supply schemes.
Added Figure 3: Power-up/down sequence.
Updated Section 6.3.2: Operating conditions at power-
up / power-down.
Updated Table 60: I/O static characteristics.
Updated Table 72: DAC characteristics.
26-Mar-2019 5
Updated energy benchmarks on cover page, see Bullet
Updated I/Os definition on cover page see Bullet.
Updated Figure 4: Clock tree.
Updated Vhyst in Table 75: COMP characteristics.
Table 105. Document revision history (continued)
Date Revision Changes

STM32L475xx

204/204 DS10969 Rev 5

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