8/17/04
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IRF7473PbF
HEXFET® Power MOSFET
lTelecom and Data-Com 24 and 48V
input DC-DC converters
lMotor Control
lUninterrutible Power Supply
lLead-Free
Benefits
Applications
lUltra Low On-Resistance
lHigh Speed Switching
lLow Gate Drive Current Due to Improved
Gate Charge Characteristic
lImproved Avalanche Ruggedness and
Dynamic dv/dt
lFully Characterized Avalanche Voltage
and Current
Parameter Max. Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 6.9
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 5.5 A
IDM Pulsed Drain Current 55
PD @TA = 25°C Power Dissipation 2.5 W
Linear Derating Factor 0.02 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery dv/dt 5.8 V/ns
TJOperating Junction and -55 to + 150
TSTG Storage Temperature Range
Soldering Temperature, for 10 seconds 300 (1.6mm from case ) °C
Absolute Maximum Ratings
Notes through are on page 8
Typical SMPS Topologies
l Full and Half Bridge 48V input Circuit
lForward 24V input Circuit
SO-8
Top View
8
1
2
3
45
6
7
D
D
D
DG
S
A
S
S
A
Symbol Parameter Typ. Max. Units
RθJL Junction-to-Drain Lead –– – 20
RθJA Junction-to-Ambient ––– 50 °C/W
Thermal Resistance
VDSS RDS(on) max ID
100V 26mW@VGS = 10V 6.9A
PD- 95559
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Parameter Min. Typ. Max. Units Conditions
gfs Forward Transconductance 10 ––– ––– S VDS = 50V, I D = 4.1A
QgTotal Gate Charge ––– 6 1 –– – I D = 4.1A
Qgs Gate-to-Source Charge ––– 21 ––– nC VDS = 50V
Qgd Gate-to-Drain ("Miller") Charge ––– 19 ––– VGS = 10V,
td(on) Turn-On Delay Time ––– 24 ––– VDD = 50V
trRise Time ––– 20 ––– ID = 4.1A
td(off) Turn-Off Delay Time ––– 29 ––– RG = 6.0 Ω
tfFall Time ––– 11 ––– VGS = 10V
Ciss Input Capacitance ––– 3180 ––– VGS = 0V
Coss Output Capacitance ––– 230 ––– VDS = 25V
Crss Reverse Transfer Capacitance ––– 120 ––– pF ƒ = 1.0MHz
Coss Output Capacitance ––– 830 ––– VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
Coss Output Capacitance ––– 150 ––– VGS = 0V, VDS = 80V, ƒ = 1.0MHz
Coss eff. Effective Output Capacitance ––– 230 ––– VGS = 0V, VDS = 0V to 80V
Dynamic @ TJ = 25°C (unless otherwise specified)
ns
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy––– 140 mJ
IAR Avalanche Current––– 4.1 A
Avalanche Characteristics
S
D
G
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode) ––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 4.1A, VGS = 0V
trr Reverse Recovery Time ––– 55 ––– n s TJ = 25°C, IF = 4.1A
Qrr Reverse RecoveryCharge ––– 140 ––– nC di/dt = 100A/µs
Diode Characteristics
2.3
55
A
Static @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 – –– – –– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– 22 26 mΩVGS = 10V, ID = 4.1A
VGS(th) Gate Threshold Voltage 3.5 –– – 5. 5 V VDS = VGS, ID = 250µA
––– ––– 1.0 µA VDS = 95V, VGS = 0V
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 nA VGS = -20V
IGSS
IDSS Drain-to-Source Leakage Current
IRF7473PbF
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Fig 2. Typical Output CharacteristicsFig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance
Vs. Temperature
-60 -40 -20 020 40 60 80 100 120 140 160
0.0
0.5
1.0
1.5
2.0
2.5
T , Junction T e mperature( C)
R , Drain-to-Source On Resistance
(Normalized)
J
DS(on)
°
V =
I =
GS
D
10V
6.9A
0.1
1
10
100
1000
0.1 1 10 100
20µs PU LSE WIDTH
T = 150 C
J°
TOP
BOTTOM
VGS
15V
12V
10V
8.0V
7.0V
6.5V
6.0V
5.5V
V , Drain-to-Source Voltage (V)
I , Drain-to-Source Current (A)
DS
D
5.5V
0.01
0.1
1
10
100
1000
5678910 11 12
V = 2 5 V
20µs PULSE WIDTH
DS
V , Gate-to-Source Voltage (V)
I , Drain-to-Source Current (A)
GS
D
T = 25 C
J°
T = 150 C
J°
0.1 110 100
VDS, Drain-to-Sour ce Vol tage (V)
0.01
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
6.0V
20µs PU LSE WIDT H
Tj = 25°C
VGS
TOP 15V
12V
10V
8.0V
7.0V
6.5V
6.0V
BOTTOM 5.5V
IRF7473PbF
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Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
020 40 60 80 100
0
4
8
12
16
20
Q , Total Gate Charge (nC)
V , Gate-to-Source Voltage (V)
G
GS
I =
D4.1A
V = 20V
DS
V = 50V
DS
V = 80V
DS
Fig 7. Typical Source-Drain Diode
Forward Voltage
0.1
1
10
100
0.0 0.4 0.8 1.2 1.6
V ,Source-to-Drain Voltage (V)
I , Reverse Drain Current (A)
SD
SD
V = 0 V
GS
T = 25 C
J°
T = 150 C
J°
Fig 8. Maximum Safe Operating Area
110 100
VDS, Dr ain-to-Source Voltage (V )
10
100
1000
10000
100000
C, Capacitance(pF)
Coss
Crss
Ciss
VGS = 0V, f = 1 MHZ
Ciss = C
gs + Cgd, C
ds SHORTED
Crss
= C
gd
Coss
= C
ds + Cgd
0.1 1 10 100 1000
VDS , Dr ain- toS ource Voltage (V )
0.1
1
10
100
1000
ID, Drain-to-Source Current (A)
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
10msec
OPERATION IN THIS AREA
LIMITED BY RDS(on)
100µsec
IRF7473PbF
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Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.01
0.1
1
10
100
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Notes:
1. D u ty fa c to r D = t / t
2. Peak T =P x Z + T
1 2
JDM thJA A
P
t
t
DM
1
2
t , Rectangular Pul se Durati on ( sec)
Thermal R esponse (Z )
1
thJA
0.01
0.02
0.05
0.10
0.20
D = 0.50
SINGLE PULSE
(THERMAL RESPONSE)
Fig 10a. Switching Time Test Circuit
V
DS
9
0%
1
0%
V
GS t
d(on)
t
r
t
d(off)
t
f
Fig 10b. Switching Time Waveforms
VDS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
RD
VGS
RG
D.U.T.
10V
+
-
VDD
25 50 75 100 125 150
0.0
2.0
4.0
6.0
8.0
T , Case Temperature ( C )
I , Drain Current (A)
°
C
D
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
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Fig 13. On-Resistance Vs. Gate Voltage
Fig 12. On-Resistance Vs. Drain Current
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
D.U.T. V
D
S
I
D
I
G
3mA
V
GS
.3µF
50KΩ
.2µF
12V
Current Regulator
Same Type as D.U.T.
Current Sampling Resistors
+
-
VGS
Q
G
Q
GS
Q
GD
V
G
Charge
25 50 75 100 125 15
0
0
100
200
300
400
Starting T , Junction Tempe r ature ( C)
E , Singl e Pulse Avalanche Energy (mJ)
J
AS
°
ID
TOP
BOTTOM
1.8A
3.3A
4.1A
6.0 8.0 10.0 12.0 14.0 16.0
VGS, G ate -to - Source Voltage (V )
0.020
0.025
0.030
0.035
RDS(on), Drain-to -Source On Resistance (Ω)
ID = 6.9A
020 40 60
ID , Drain Current (A)
0.022
0.024
0.026
0.028
RDS ( on) , Drain-to-Source On Resistance ( Ω)
VGS = 10V
tp
V
(BR)DSS
I
AS
R
G
I
AS
0.01
Ω
t
p
D.U.T
L
VDS
+
-V
DD
DRIVER
15V
20V
10V
IRF7473PbF
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SO-8 Package Outline
Dimensions are shown in millimeters (inches)
SO-8 Part Marking
e1
D
E
y
b
A
A1
H
K
L
.189
.1497
0°
.013
.050 BASIC
.0532
.0040
.2284
.0099
.016
.1968
.1574
8°
.020
.0688
.0098
.2440
.0196
.050
4.80
3.80
0.33
1.35
0.10
5.80
0.25
0.40
0°
1.27 BASIC
5.00
4.00
0.51
1.75
0.25
6.20
0.50
1.27
MIN MAX MILLIMETERSINCHES MIN MAX
DIM
8°
e
c .0075 .0098 0.19 0.25
.025 BASIC 0.635 BASIC
87
5
65
D B
E
A
e
6X
H
0.25 [.010] A
6
7
K x 4 5°
8X L 8X c
y
0.25 [.010] C A B
e1 A
A1
8X b
C
0.10 [.004]
4312
FOOTPRINT
8X 0.72 [.028]
6.46 [.255]
3X 1.27 [. 050]
4. OUTLINE CONFORMS T O JEDEC OUTLINE MS-012AA.
NOTES:
1. DIMEN SIONING & TOLERANCING PER ASME Y14.5M-1994.
2. CONTROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE SHO WN IN MILLIMETERS [INCHES].
5 DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS.
6 DIMENSION DOES NOT INC LUDE MOLD PROTRUSIONS.
MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.010].
7 DIMENSION IS THE LENGTH OF LEAD FOR SOLDERING TO
A SUBSTRATE.
MOLD PROTRUSIONS NOT TO EXCEED 0.15 [.006].
8X 1.78 [.070
]
DATE CODE (YWW)
XXXX
INTERNATIONAL
RECTIFIER
LOGO
F7101
Y = LAST DIGIT OF THE YE AR
PART NUMBER
LOT CODE
WW = WEEK
EXAMPLE: THIS IS AN IRF7101 ( MOSFET)
P = DES IGNAT ES LEAD-F RE E
PRODUCT (OPTIONAL)
A = ASSE MBL Y SITE CODE
IRF7473PbF
8www.irf.com
Repetitive rating; pulse width limited by
max. junction temperature.
Notes:
Starting TJ = 25°C, L = 16mH
RG = 25Ω, IAS = 4.1A.
Pulse width ≤ 400µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 4.1A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. O U TLIN E C O NFORMS TO EIA-481 & EIA-541.
FEED DIRECTION
TE RM I NAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
N
OTES:
1
. CONTROLLING DIMENSION : MILLIMETER.
2
. ALL DIMENSIONS ARE SHOWN IN MILLI METERS(INCHES).
3
. OUTLINE CONF ORMS T O EIA-481 & E IA-541.
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.08/04