Discrete POWER & Signal Technologies 2N4401 MMBT4401 SOT-23 Mark: 2X NPN General Purpose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Sourced from Process 19. See PN2222A for characteristics. Absolute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units VcEo Collector-Emitter Voltage 40 Vv Voso Collector-Base Voltage 60 Vv Veo Emitter-Base Voltage 6.0 Vv Io Collector Current - Continuous 1.0 A Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units 2N4401 *MMBT4401 Pp Total Device Dissipation 625 350 mW Derate above 25C 5.0 2.8 mW/C Reuc Thermal Resistance, Junction to Case 83.3 C/W Rega Thermal Resistance, Junction to Ambient 200 357 C/W Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06." & 1997 Fairchild Semiconductor Corporation LOPV LAW / LOvy~Ne Electrical Characteristics NPN General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Visriceo Collector-Emitter Breakdown Voltage* | Ip = 1.0 mA, Iz =0 40 Vv Viericso Collector-Base Breakdown Voltage lo =0.1 mA, Ir =0 60 Vv VieryeBO Emitter-Base Breakdown Voltage le=0.1 mA, Ip =0 6.0 Vv let Base Cutoff Current Vor = 35 V, Veg = 0.4 V 0.1 uA loex Collector Cutoff Current Vor = 35 V, Veg =0.4 V 0.1 uA ON CHARACTERISTICS* Hee DC Current Gain lo = 0.1 MA, Vcoe = 1.0 V 20 lo =1.0 mA, Veg = 1.0 V 40 lg = 10 mA, Vee = 1.0 V 80 lo = 150 mA, Voge = 1.0 V 100 300 Io = 500 mA, Voz = 2.0 V 40 Veeieaty Collector-Emitter Saturation Voltage lo = 150 mA, Ip = 15 mA 0.4 Vv Io = 500 mA, Iz = 50 mA 0.75 Vv VeEaty Base-Emitter Saturation Voltage Io = 150 mA, Ip = 15 MA 0.75 0.95 Vv Io = 500 mA, Iz = 50 mA 1.2 Vv SMALL SIGNAL CHARACTERISTICS fr Current Gain - Bandwidth Product Io = 20 mA, Voge = 10 V, 250 MHz f = 100 MHz Cob Collector-Base Capacitance Vog = 5.0 V, Ie = 0, 6.5 pF f = 140 kHz Ceb Emitter-Base Capacitance Vee = 0.5 V, Io = 0, 30 pF f = 140 kHz hie Input Impedance lo = 1.0 mA, Voce = 10 V, 1.0 15 kQ f = 1.0 kHz re Voltage Feedback Ratio lo = 1.0 mA, Voce = 10 V, 0.1 8.0 x 107 f = 1.0 kHz Hie Small-Signal Current Gain lo = 1.0 mA, Voce = 10 V, 40 500 f = 1.0 kHz Hoe Output Admittance lo = 1.0 mA, Vee = 10 V, 1.0 30 umhos f = 1.0 kHz SWITCHING CHARACTERISTICS ty Delay Time Voc = 30 V, Veg = 0.2 V, 15 ns tr Rise Time lo = 150 mA, Ip, = 15 MA 20 ns ts Storage Time Veco = 30 V, Io = 150 MA 225 ns tt Fall Time lay =lp2 = 15 MA 30 ns * Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0% LOVPLEWW / LOvYNe