BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Vishay Semiconductors Fast Avalanche Sinterglass Diode FEATURES * Glass passivated junction * Hermetically sealed package * Low reverse current * Soft recovery characteristics * Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC 949539 * Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA APPLICATIONS Case: SOD-57 * Fast rectification and switching diode Terminals: plated axial leads, solderable per MIL-STD-750, method 2026 Polarity: color band denotes cathode end Mounting position: any Weight: approx. 369 mg PARTS TABLE PART TYPE DIFFERENTIATION PACKAGE BYT52A VR = 50 V; IFAV = 1.4 A SOD-57 BYT52B VR = 100 V; IFAV = 1.4 A SOD-57 BYT52D VR = 200 V; IFAV = 1.4 A SOD-57 BYT52G VR = 400 V; IFAV = 1.4 A SOD-57 BYT52J VR = 600 V; IFAV = 1.4 A SOD-57 BYT52K VR = 800 V; IFAV = 1.4 A SOD-57 BYT52M VR = 1000 V; IFAV = 1.4 A SOD-57 ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage = repetitive peak reverse voltage Peak forward surge current Average forward current Non repetitive reverse avalanche energy Junction and storage temperature range Document Number: 86029 Rev. 1.7, 30-Jul-10 See electrical characteristics PART SYMBOL VALUE UNIT BYT52A VR = VRRM 50 V BYT52B VR = VRRM 100 V BYT52D VR = VRRM 200 V BYT52G VR = VRRM 400 V BYT52J VR = VRRM 600 V BYT52K VR = VRRM 800 V BYT52M VR = VRRM 1000 V A tp = 10 ms, half sine wave IFSM 50 On PC board IFAV 0.85 A l = 10mm IFAV 1.4 A I(BR)R = 0.4 A BYT52J ER 10 mJ BYT52K ER 10 mJ BYT52M ER 10 mJ Tj = Tstg - 55 to + 175 C For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 1 BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M Fast Avalanche Sinterglass Diode Vishay Semiconductors MAXIMUM THERMAL RESISTANCE (Tamb = 25 C, unless otherwise specified) PARAMETER Junction ambient TEST CONDITION SYMBOL VALUE Lead length l = 10 mm, TL = constant RthJA 45 UNIT K/W On PC board with spacing 25 mm RthJA 100 K/W ELECTRICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. IF = 1 A VF - - 1.3 V VR = VRRM IR - - 5 A VR = VRRM, Tj = 150 C IR - - 150 A IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 200 ns Forward voltage Reverse current Reverse recovery time PART UNIT 1.6 120 IFAV - Average Forward Current (A) RthJA - Ther. Resist. Junction/Ambient (K/W) TYPICAL CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) 100 80 60 l l 40 20 TL = constant VR = VRRM half sinewave 1.4 1.2 RthJA = 45 K/W I = 10 mm 1.0 0.8 0.6 RthJA = 100 K/W PCB: d = 25 mm 0.4 0.2 0 0 0 5 10 15 20 25 30 l - Lead Length (mm) 949552 0 Fig. 1 - Max. Thermal Resistance vs. Lead Length 20 40 60 80 100 120 140 160 180 Tamb - Ambient Temperature (C) 16329 Fig. 3 - Max. Average Forward Current vs. Ambient Temperature 1000 10 IR - Reverse Current (A) IF - Forward Current (A) VR = VRRM Tj = 175 C 1 Tj = 25 C 0.1 0.01 100 10 1 25 0.001 0 16328 0.5 1.0 1.5 2.0 2.5 3.0 VF - Forward Voltage (V) Fig. 2 - Max. Forward Current vs. Forward Voltage www.vishay.com 2 16330 50 75 100 125 150 175 Tj - Junction Temperature (C) Fig. 4 - Max. Reverse Current vs. Junction Temperature For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Document Number: 86029 Rev. 1.7, 30-Jul-10 BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M 500 Vishay Semiconductors 40 f = 1 MHz VR = VRRM 450 CD - Diode Capacitance (pF) PR - Reverse Power Dissipation (mW) Fast Avalanche Sinterglass Diode 400 350 PR-Limit at 100 % VR 300 250 200 150 PR-Limit at 80 % VR 100 35 30 25 20 15 10 5 50 0 25 50 75 100 125 150 0 0.1 175 Tj - Junction Temperature (C) 16331 16332 Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature 1 10 100 VR - Reverse Voltage (V) Fig. 6 - Diode Capacitance vs. Reverse Voltage 3.6 (0.142) max. 0.82 (0.032) max. PACKAGE DIMENSIONS in millimeters (inches): SOD-57 26 (1.024) min. 4 (0.157) max. 26 (1.024) min. 20543 Document Number: 86029 Rev. 1.7, 30-Jul-10 For technical questions within your region, please contact one of the following: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com www.vishay.com 3 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000