Document Number: 86029 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 1
Fast Avalanche Sinterglass Diode
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
Vishay Semiconductors
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
• Glass passivated junction
• Hermetically sealed package
• Low reverse current
• Soft recovery characteristics
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
• Halogen-free according to IEC 61249-2-21
definition
APPLICATIONS
• Fast rectification and switching diode
949539
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYT52A VR = 50 V; IFAV = 1.4 A SOD-57
BYT52B VR = 100 V; IFAV = 1.4 A SOD-57
BYT52D VR = 200 V; IFAV = 1.4 A SOD-57
BYT52G VR = 400 V; IFAV = 1.4 A SOD-57
BYT52J VR = 600 V; IFAV = 1.4 A SOD-57
BYT52K VR = 800 V; IFAV = 1.4 A SOD-57
BYT52M VR = 1000 V; IFAV = 1.4 A SOD-57
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Reverse voltage = repetitive peak
reverse voltage See electrical characteristics
BYT52A VR = VRRM 50 V
BYT52B VR = VRRM 100 V
BYT52D VR = VRRM 200 V
BYT52G VR = VRRM 400 V
BYT52J VR = VRRM 600 V
BYT52K VR = VRRM 800 V
BYT52M VR = VRRM 1000 V
Peak forward surge current tp = 10 ms, half sine wave IFSM 50 A
Average forward current On PC board IFAV 0.85 A
l = 10mm IFAV 1.4 A
Non repetitive reverse avalanche
energy I(BR)R = 0.4 A
BYT52J ER10 mJ
BYT52K ER10 mJ
BYT52M ER10 mJ
Junction and storage temperature
range Tj = Tstg - 55 to + 175 °C
www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 86029
2DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com Rev. 1.7, 30-Jul-10
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
Vishay Semiconductors Fast Avalanche Sinterglass Diode
TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Max. Thermal Resistance vs. Lead Length
Fig. 2 - Max. Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Max. Reverse Current vs. Junction Temperature
MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient Lead length l = 10 mm, TL = constant RthJA 45 K/W
On PC board with spacing 25 mm RthJA 100 K/W
ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 1 A VF--1.3V
Reverse current VR = VRRM IR--5μA
VR = VRRM, Tj = 150 °C IR- - 150 μA
Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr - - 200 ns
0
20
40
80
60
100
120
151050 202530
RthJA - Ther. Resist. Junction/Ambient (K/W)
l - Lead Length (mm)949552
ll
T
L
= constant
IF - Forward Current (A)
0.001
0.01
0.1
1
10
0 0.5 1.0 1.5 2.0 3.02.5
VF - Forward Voltage (V)
16328
Tj = 25 °C
Tj = 175 °C
16329
I
FAV
- Average Forward Current (A)
0 20406080100120140160180
Tamb - Ambient Temperature (°C)
1.6
1.2
1.4
1.0
0.8
0.6
0.4
0.2
0
V
R
= V
RRM
half sinewave
R
thJA
= 100 K/W
PCB: d = 25 mm
R
thJA
= 45 K/W
I = 10 mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16330
IR - Reverse Current (μA)
VR = VRRM
BYT52A, BYT52B, BYT52D, BYT52G, BYT52J, BYT52K, BYT52M
Fast Avalanche Sinterglass Diode Vishay Semiconductors
Document Number: 86029 For technical questions within your region, please contact one of the following: www.vishay.com
Rev. 1.7, 30-Jul-10 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com 3
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
50
250
100
300
150
350
200
450
400
500
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16331
P
R
- Reverse Power Dissipation (mW)
P
R
-Limit
at 100 % V
R
P
R
-Limit
at 80 % V
R
V
R
= V
RRM
0
5
10
15
25
35
20
30
40
0.1 1 10 100
VR - Reverse Voltage (V)
16332
CD - Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min. 4 (0.157) max. 26 (1.024) min.
0.82 (0.032) max.
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Revision: 12-Mar-12 1Document Number: 91000
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