28-40 GHz GaAs MMIC Low Noise Amplifier AA038N1-00, AA038N2-00 17 dB Typical Small Signal Gain 2.599 2.445 2.183 3.8 dB Typical Noise Figure at 38 GHz 1.961 Single Bias Supply Operation (4.5 V) Chip Outline 1.560 Features 1.355 1.274 1.267 0.25 m Ti/Pd/Au Gates Description Alpha's four-stage reactively-matched 28-40 GHz GaAs MMIC low noise amplifier has typical small signal gain of 17 dB with a typical noise figure of 3.8 dB at 38 GHz. The chip uses Alpha's proven 0.25 m low noise PHEMT technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. 0.087 0.124 2.710 2.600 2.146 1.813 1.264 0.000 0.246 100% Visual Inspection to MIL-STD-883 MT 2010 0.588 0.000 100% On-Wafer RF, DC and Noise Figure Testing Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Value Operating Temperature (TC) -55C to +90C Storage Temperature (TST) -65C to +150C Bias Voltage (VD) 6 VDC Power In (PIN) 10 dBm Junction Temperature (TJ) 175C Electrical Specifications at 25C (VDS = 4.5 V) AA038N1-00 Parameter Condition Drain Current Symbol Min. IDS Small Signal Gain F = 28-40 GHz Noise Figure G 15 Typ.3 Max. Unit 35 50 mA 17 dB F = 38 GHz NF 3.8 4.2 dB Input Return Loss F = 28-40 GHz RLI -10 -6 dB Output Return Loss F = 28-40 GHz RLO -8 -6 F = 38 GHz P1 dB 6 dBm JC 101 C/W Output Power at 1 dB Gain Compression1 Thermal Resistance2 dB AA038N2-00 Parameter Condition Drain Current Symbol Min. IDS Small Signal Gain Noise Figure Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression1 Thermal Resistance2 1. Not measured on a 100% basis. 2. Calculated value based on measurement of discrete FET. 17 Typ.3 Max. Unit 35 50 mA F = 37-39.5 GHz G F = 38 GHz NF 3.8 19 4.2 dB dB F = 37-39.5 GHz RLI -14 -6 dB F = 37-39.5 GHz RLO -11 -8 dB F = 38 GHz P1 dB 6 dBm JC 101 C/W 3. Typical represents the median parameter value across the specified frequency range for the median chip. Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 12/99A 1 28-40 GHz GaAs MMIC Low Noise Amplifier AA038N1-00, AA038N2-00 Typical Performance Data Bias Arrangement .01 F 30 VD2 20 50 pF S21 (dB) 10 0 S22 -10 RF IN S11 RF OUT -20 -30 18 20 22 24 26 28 30 32 34 36 38 40 42 .01 F VD1 50 pF Frequency (GHz) Typical Small Signal Performance S-Parameters (VD = 4.5 V) 31 11 Gain* 3.0 V, 5.5 V 10 Gain 2.5 V 9 Gain 4.5 V 27 8 25 7 23 21 6 NF 4.5 V 5 NF* 3.0 V, 5.5 V 19 NF 2.5 V 4 Circuit Schematic 29 D Gain (dB) Noise Figure (dB) For biasing on, adjust VD from zero to the desired value (4.5 V recommended). For biasing off, reverse the biasing on procedure. 17 3 15 2 13 G Detail A 18 20 22 24 26 28 30 32 34 36 38 40 42 Frequency (GHz) VD2 Typical Gain and Noise Figure Performance for Three Bias Conditions *Special Bias: VD1 = 3.0 V, VD2 = 5.5 V RF IN SEE DETAIL A 36 21 34 Gain 19 32 17 30 15 28 13 26 11 24 ID 9 22 7 20 5 G G G D D D D Drain Current (mA) 38 GHz Gain (dB) and 38 GHz Noise Figure (dB) 23 G 18 NF 3 16 1.0 2.0 3.0 4.0 5.0 6.0 VD1 and VD2 (V) Typical Gain and Noise Figure Performance vs. Drain Bias (VD1 = VD2) 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 12/99A RF OUT VD1