D5V0P4UR6SO
Document number: DS38235 Rev. 1 - 2
1 of 5
www.diodes.com
May 2016
© Diodes Incorporated
D5V0P4UR6SO
ADVANCE INFO R MA T I O N
4 CHANNEL LOW CAPACITANCE TVS DIODE ARRAY
Product Summary
VBR (Min)
IPP (Max)
4.5V
45A
Description
The D5V0P4UR6SO is a high-performance device suitable for
protecting four high-speed I/Os. These devices are assembled in
SOT26 package and have high ESD surge capability and low
capacitance.
Applications
Typically used at high-speed ports such as USB 2.0, IEEE1394
(Firewire®, iLink™), Serial ATA, DVI, HDMI and PCI.
Features
Low Clamping Voltage: Typical 7.5V at 12A 100ns, TLP, I/O to
VSS; Typical 5.8V at 12A 100ns, TLP, VCC to VSS
IEC 61000-4-2 (ESD): Air ±30kV, Contact ±30kV
IEC 61000-4-4 (EFT): ±80A (5/50ns)
IEC 61000-4-5 (Lighting): 20A, I/O to VSS; 45A, VCC to VSS
TLP Dynamic Resistance: 0.15, I/O to VSS; 0.07, VCC to VSS
Low Channel Input Capacitance of 2.1pF Typical
4 Channels of ESD Protection
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Mechanical Data
Case: SOT26
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Schematic
Terminals Finish Matte Tin Pleated Leadframe.
Solderable per MIL-STD-202, Method 208
Weight: 0.016 grams (Approximate)
Ordering Information (Note 4)
Product
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
D5V0P4UR6SO-7
Standard
DE1
7
8
3,000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Date Code Key
Year
2016
2017
2018
2019
2020
2021
Code
D
E
F
G
H
I
Month
Jan
Feb
Mar
Apr
May
Jun
Jul
Aug
Sep
Oct
Nov
Dec
Code
1
2
3
4
5
6
7
8
9
O
N
D
Top View
Device Schematic
DE1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: D = 2016)
M = Month (ex: 9 = September)
Note: Represents Internal Code
SOT26
A17
YM
DE1
FireWire is a registered trademark of Apple Computer, Inc.
iLink is a trademark of CEM Corporation.
D5V0P4UR6SO
Document number: DS38235 Rev. 1 - 2
2 of 5
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May 2016
© Diodes Incorporated
D5V0P4UR6SO
ADVANCE INFO R MA T I O N
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Conditions
Peak Pulse Current, per IEC 61000-4-5
IPP
20
A
I/O to VSS, 8/20μs
Peak Pulse Current, per IEC 61000-4-5
IPP
45
A
VCC to VSS, 8/20μs
Peak Pulse Power, per IEC 61000-4-5
PPP
180
W
I/O to VSS, 8/20μs
Operating Supply Voltage (DC)
VDC
3.6
V
VCC to VSS
ESD Protection Contact Discharge, per IEC 61000-4-2
VESD_CONTACT
±30
kV
I/O to VSS, VCC to VSS
ESD Protection Air Discharge, per IEC 61000-4-2
VESD_AIR
±30
kV
I/O to VSS, VCC to VSS
Operating Temperature
TOP
-55 to +85
°C
Storage Temperature
TSTG
-55 to +150
°C
Thermal Characteristics
Characteristic
Symbol
Value
Unit
Power Dissipation Typical (Note 5)
PD
300
mW
Thermal Resistance, Junction to Ambient Typical (Note 5)
RθJA
417
°C/W
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Conditions
Reverse Working Voltage
VRWM
3.3
V
VCC to VSS
Reverse Leakage Current (Note 6)
ILEAK
5
μA
VCC = 3.3V, VCC to VSS
Channel Leakage Current (Note 6)
ICH-LEAK
1
μA
VI/O = 3.3V, I/O to VSS
Reverse Breakdown Voltage
VBR
4.5
7
V
IBR = 1mA, VCC to VSS
Forward Clamping Voltage
VF
0.8
1.2
V
IF = 15mA, VSS to VCC
Reverse Clamping Voltage (Note 7)
VC_5A
6
V
IPP = 5A, I/O to VSS, 8/20μs
4.8
V
IPP = 5A, VCC to VSS, 8/20μs
ESD Clamping Voltage
VESD
7.5
V
TLP, 12A, tP = 100ns, I/O to VSS
5.8
TLP, 12A, tP = 100ns, VCC to VSS
Dynamic Resistance
RDIF
0.15
TLP, 12A, tP = 100ns, I/O to VSS
0.07
TLP, 12A, tP = 100ns, VCC to VSS
Channel Input Capacitance
CI/O
2.1
2.5
pF
VI/O = 1.65V, VCC = 3.3V, f = 1MHz
2.4
3.0
0
pF
VI/O = 1.65V, VCC = floated, f = 1MHz
Variation of Channel Input Capacitance
CI/O
0.05
pF
VSS = 0V, I/O = 1.65V, VCC = 3.3V, f = 1MHz,
I/O_x to VSS I/O_y to VSS
0.04
pF
VSS = 0V, I/O = 1.65V, VCC = floated, f = 1MHz,
I/O_x to VSS I/O_y to VSS
Notes: 5. Device mounted on FR-4 PCB pad layout (2oz copper) as shown on Diodes, Inc. website at http://www.diodes.com/package-outlines.html.
6. Short duration pulse test used to minimize self-heating effect.
7. Clamping voltage value is based on an 8x20µs peak pulse current (IPP) waveform.
D5V0P4UR6SO
Document number: DS38235 Rev. 1 - 2
3 of 5
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May 2016
© Diodes Incorporated
D5V0P4UR6SO
ADVANCE INFO R MA T I O N
T , AMBIENT TEMPERATURE C)
Figure 1 Pulse Derating Curve
A
PEAK PULSE DERATING IN % OF
PEAK POWER OR CURRENT
Peak Value I PP
Half Value I /2
PP
8x20 Waveform
as defined by R.E.A.
tp
I , PEAK PULSE CURRENT (%I )
PP pp
t, TIME (µS)
Figure 2 Pulse Waveform
t = 8µS
R
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
I/O to V , f=1MHz
SS
V = Floated
CC
V = 3.3V
CC
C , INPUT CAPACITANCE (pF)
I/O
V , INPUT VOLTAGE (V)
I/O
Figure 3 Input Capacitance vs. Input Voltage
0
2
4
6
8
10
12
14
16
18
0 1 2 3 4 5 6 7 8 9
CURRENT FROM I/O TO V (A)
SS
VOLTAGE FROM I/O TO V (V)
SS
Figure 5 Current vs. Voltage
0
2
4
6
8
10
12
14
16
18
0 1 2 3 4 5 6 7 8
CURRENT FROM I/O TO V (A)
SS
VOLTAGE FROM I/O TO V (V)
SS
Figure 6 Current vs. Voltage
(oC)
t, Time (µs)
VCC = 3.3V
VCC = Floated
CURRENT FROM VCC TO VSS (A)
VOLTAGE FROM VCC TO VSS (V)
0
1
2
3
4
5
6
7
8
9
10
11
12
3 6 9 12 15 18 21 24 27 30 33 36 39 42 45 48
VC,CLAMPING VOLTAGE (V)
CURRENT FROM I/O TO VSS (A)
Figure 4 Clamping Voltage Characteristic
I/O pin to GND pin
IEC61000-4-5
(Lighting)
VCC pin to GND pin
D5V0P4UR6SO
Document number: DS38235 Rev. 1 - 2
4 of 5
www.diodes.com
May 2016
© Diodes Incorporated
D5V0P4UR6SO
ADVANC E INF O R MA TI O N
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT26
SOT26
Dim
Min
Max
Typ
A1
0.013
0.10
0.05
A2
1.00
1.30
1.10
A3
0.70
0.80
0.75
b
0.35
0.50
0.38
c
0.10
0.20
0.15
D
2.90
3.10
3.00
e
0.95
e1
1.90
E
2.70
3.00
2.80
E1
1.50
1.70
1.60
L
0.35
0.55
0.40
a
a1
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT26
Dimensions
Value (in mm)
C
2.40
C1
0.95
G
1.60
X
0.55
Y
0.80
Y1
3.20
a1
D
e
E1 E
b
A2 A1
Seating Plane
L
c
a
e1
A3
C1
Y1 G
X
Y
C
D5V0P4UR6SO
Document number: DS38235 Rev. 1 - 2
5 of 5
www.diodes.com
May 2016
© Diodes Incorporated
D5V0P4UR6SO
ADVANC E INF O R M A TIO N
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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