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TECHNICAL DATA SHEET
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: ( 978) 689-0803
Website: http: //www.microsemi.com
P-CHANNEL J-FET
Equivalent To MIL-PRF-19500/476
T4-LDS-0006 Rev. 1 (063387) Page 1 of 2
DEVICES LEVELS
2N5114 MQ = JAN Equivalent
2N5115 MX = JANTX Equivalent
2N5116 MV = JANTXV Equivalent
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions Symbol All Devices Unit
Gate-Source Voltage (1) V
GS 30 Vdc
Drain-Source Voltage (1) V
DS 30 Vdc
Drain-Gate Voltage VDG 30 Vdc
Gate Current IG 50 mAdc
Power Dissipation TA = +25°C (2) PT 0.500 W
Storage Temperature Range Tstg -65 to +200
°C
(1) Symmetrical geometry allows operation of those units with source / drain leads interchanged.
(2) Derate linearly 3.0 mW/°C for TA > 25°C.
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions Symbol Min. Max. Unit
Gate-Source Breakdown Voltage
VDS = 0, IG = 1.0 μA dc
V(BR)GSS 30 Vdc
Drain-Source “On” State Voltage
VGS = 0V dc, ID = -15mA dc
VGS = 0V dc, ID = -7.0mA dc
VGS = 0V dc, ID = -3.0mA dc
2N5114
2N5115
2N5116 VDS(on) -1.3
-0.8
-0.6 Vdc
Gate Reverse Current
VDS = 0, VGS = 20V dc
IGSS 500 pAdc
Drain Current Cutoff
VGS = 12V dc, VDS = -15V dc
VGS = 7.0V dc, VDS = -15V dc
VGS = 5.0V dc, VDS = -15V dc
2N5114
2N5115
2N5116 ID(off) -500
-500
-500 pAdc
Zero Gate Voltage Drain Current
VGS = 0, VDS = -18V dc
VGS = 0, VDS = -15V dc
VGS = 0, VDS = -15V dc
2N5114
2N5115
2N5116 IDSS -30
-15
-5.0
-90
-60
-25 mAdc
Gate-Source Cutoff
VDS = -15, ID = -1.0nA dc
VDS = -15, ID = -1.0nA dc
VDS = -15, ID = -1.0nA dc
2N5114
2N5115
2N5116 VGS(off) 5.0
3.0
1.0
10
6.0
4.0 Vdc
TO-18
(TO-206AA)