p-channel JFETs designed for... = Small-Signal Amplifiers # Analog Multipliers Modulators psf Siliconix Performance Curves PC See Section 5 BENEFITS @ Ease of Amplifier Design Ipsg & Gf, Closely Specified NOTES: 2. Derate linearly to 175C free-air temperature at rate of 2.0 mW/C *ABSOLUTE MAXIMUM RATINGS (25C) TO-72 : See Section 7 Gate-Drain and Gate-Source Voltage (Note 1)........ 20 V Gate Current ..............00005s tee eee eee 10mA Total Device Dissipation at (or below) 25C Free-Air Temperature (Note 2).......... 300 mW D Storage Temperature Range.............. -65 to +200C : Lead Temperature D c (1/16 from case for 10 seconds).............. 230C s 6 8 *ELECTRICAL CHARACTERISTICS (25C unless otherwise noted) 2N3329 2N3330 2N3331 2N3332 a Characteristic Unit Test Conditions Min Max Min | Max Min Max Min Max 1 0.01 0.01 0.01 0.01 Vs = 10 V, Vos = i Igss Gate Reverse Current BA Gs Vos =0 > 2 10 10 10 10 Vgs = 10 V, Vos =0, Ta = 150C al 5 |BVess vote? Breakdown | 99 20 20 20 IG = 10#A, Vpg = 0 |_| + v 4] 4] vesiott voles Cutoff 5 6 8 6 Vps =-15 V, Ip = -10 2A 41 5] lpss Saturation Drain Current -1 -3 ~2 -6 -] -15 -1 -6 mA | Vos =-10 V, Veg =0 L_| 6] | rDston) pain Source ON 1000 800 600 Q | Ip =-100 nA, Veg = 0 Common-Source Input 71 |gis Con luctance P 0.2 0.2 0.2 0.2 | 8 Common-Source Reverse 0.1 01 01 0.1 2N3329: Ip = -1 mA ors Transfer Conductance . . . . 2N3330: Ip =-2mA - xumhol Vps = -10V 2N3331: Ip = -5 mA f=1kHz 9] D | gos commonsou ree Output 20 40 100 20 ioe i... 2N3332: Ip=-1 mA | 10] N Common-Source Forward | 1000| 2000 | 1500 | 3000 | 2000| 4000 | 1000 | 2200 tt] an Mts Transconductance 900 1350 1800 900 T= 10Mbe t . 12| | Ciss Comenee Input 20 20 20 20 | pF | Vps=-10V, Veg=1V f= 1 MHz on Vos =-5 V, Ip =-1 mA = 13 NF Noise Figure 3 3 4 1 tp Rgen = 1 MO f= 1 kHz oR Vos =-5 V, Ip =-1mMA = 14 NF Noise Figure 5 Rgen = 10 MS f=10Hz *JEDEC registered data Pc 1. Due to symmetrical geometry, these units may be operated with source and drain ieads interchanged. 33 1979 Siticonix incorporated CECENT LECENT OCCENT 6ZTEENT xIuUgogI PC iconix GATE ALSO BACKSIDE CONTACT SAND D ARE SYMMETRICAL | 0.0035 7) 8.990 40,762) ALL DIMENSIONS IN INCHES JALL DIMENSIONS IN MILLIMETERS} Output Characteristic v Ip DRAIN CURRENT (mA} Vos ORAIN-SOURCE VOLTAGE (VOLTS) Transfer Characteristic =-5V An Ta =+26C Ta = +150C Ip ~ DRAIN CURRENT {yA} 0 02 04 O06 08 10 12 14 Vgs GATE-SOURCE VOLTAGE (VOLTS) Noise Figure vs Generator Resistance F=1kHz Vos *-5V Ves =0 NF NOISE FIGURE (dB) Roan ~ GENERATOR RESISTANCE {OHMS) hannel JFET Uesigned for = General Purpose Amplifiers and Attenuators TYPE PACKAGE Single TO-18 Single TO-72 Single Chip PERFORMANCE CURVES (25C unless otherwise noted) Gate Reverse Current vs Ambient Temperature o & =0 1 4 & uw 2 a a > Q $ 1 = S10- a c 149-2 -50 -25 O25 150 T AMBIENT TEMPERATURE (C) Common-Source Capacitances vs Gate-Source Voltage 10 Vos =0 f= 1MMz = & w 2 - 1 2 2 a 0.1 0 4 8 12 16 20 Vos GATE-SOURCE VOLTAGE {VOLTS} Noise Figure vs Frequency Vos=-5 Vv Ves=0 a z a ec > 3 = wu 2 9 z 1 . 2 f FREQUENCY (kHz) BS PRINCIPAL DEVICES 2N2608, 2N2608JAN, 2N2843 2N3329-32, 2N3909, VCRSP 2N2608CHP, 2N2843CHP, 2N3329CHP-32CHP, 2N3909CHP VCRS5PCHP Drain Current & Transconductance vs Gate-Source Voltage 4 3 Vos=-5V fs @ f= T kHz -8 [pss @ Vas ~ 3 3 (soyu) 3ONVLONONOOSNVYL GHYMHOS 4H -4 3 -2 Ipss - SATURATION DRAIN CURRENT (mA) 0 1 2 3 4 5 6 Vesioft} GATE-SOURCE CUTOFF VOLTAGE (VOLTS) Common-Source Output Conductance vs Drain Current 100 Vos =-5V t=4 Qos QUTPUT CONDUCTANCE (mhos) O14 01 01 -1.0 ip DRAIN CURRENT (mA) Equivalent Input Noise Voltage vs Frequency 5 Ves=0 iz) 3p NOISE VOLTAGE {nV/, 1K 10K f FREQUENCY (Hz) 5-36 1979 Siliconix incorporated