ELECTRICAL CHARACTERISTICS @ 25°C, unless otherwise specified.
CDI MINIMUM MAXIMUM MAXIMUM MAXIMUM REVERSE MAXIMUM
TYPE BREAKDOWN FORWARD FORWARD LEAKAGE CURRENT CAPACITANCE @ ESDS
NUMBER VOLTAGE VOLTAGE VOLTAGE V R= 0 VOLTS CLASS
f = 1.0 MHZ
VBR @ 10
µ
AV
F @ 1 mA VF @ IF1R@ VRCT
VOLTS VOLTS VOLTS@mA NA VOLTS PICO FARADS
1N5711UR-1 70 0.41 1.0 @ 15 200 50 2.0 1
1N5712UR-1 20 0.41 1.0@35 150 16 2.0 1
1N6857UR-1 20 0.35 0.75@ 35 150 16 4.5 2
1N6858UR-1 70 0.36 0.65 @ 15 200 50 4.5 2
CDLL2810 20 0.41 1.0 @ 35 100 15 2.0 1
CDLL5711 70 0.41 1.0 @ 15 200 50 2.0 1
CDLL5712 20 0.41 1.0 @ 35 150 16 2.0 1
CDLL6263 60 0.41 1.0 @ 15 200 50 2.2 1
CDLL6857 20 0.35 0.75 @ 35 150 16 4.5 2
CDLL6858 70 0.36 0.65 @ 15 200 50 4.5 2
NOTE: Effective Minority Carrier Lifetime (
ττ
) is 100 Pico Seconds
NOTICE: Qualification testing to J, JX, JV and JS levels for 6857 and 6858 types is underway. Contact the
factory for qualification completion dates. These two part numbers are being introduced by CDI as
“drop-in” replacements for the 5711 and 5712. They provide a more robust mechanical design and
a higher ESDS class with the only trade-off being an increase in capacitance.
6 LAKE STREET, LAWRENCE, MASSACHUSETTS 01841
PHONE (978) 620-2600 FAX (978) 689-0803
WEBSITE: http://www.microsemi.com 145
MILLIMETERS INCHES
DIM MIN MAX MIN MAX
D 1.60 1.70 0.063 0.067
F 0.41 0.55 0.016 0.022
G 3.30 3.70 .130 .146
G1 2.54 REF. .100 REF.
S 0.03 MIN. .001 MIN.
FIGURE 1
DESIGN DATA
CASE: DO-213AA, Hermetically sealed
glass case. (MELF, SOD-80, LL34)
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (ROJEC):
100 °C/W maximum at L = 0 inch
THERMAL IMPEDANCE: (ZOJX): 40
°C/W maximum
POLARITY: Cathode end is banded.
MOUNTING SURFACE SELECTION:
The Axial Coefficient of Expansion
(COE) Of this Device is Approximately
+6PPM/°C. The COE of the Mounting
Surface System Should Be Selected To
Provide A Suitable Match With This
Device.
MAXIMUM RATINGS
Operating Temperature: -65°C to +150°C
Storage Temperature: -65°C to +150°C
Operating Current: 5711 & 6263 TYPES :33mA dc @ TEC = +140°C
2810, 5712 & 6858 Types :75mA dc @ TEC = +130°C
6857 Types :150mA dc @ TEC = +110°C
Derating: :All Types: Derate to 0 (zero) mA dc @ +150°C
• 1N5711UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS
PER MIL-PRF-19500/444
• 1N5712UR-1 AVAILABLE IN JAN, JANTX, JANTXV and JANS
PER MIL-PRF 19500/444
• SCHOTTKY BARRIER DIODES
• LEADLESS PACKAGE FOR SURFACE MOUNT
• METALLURGICALLY BONDED, DOUBLE PLUG CONSTRUCTION
1N5711UR-1
1N5712UR-1
1N6857UR-1
1N6858UR-1
CDLL2810
CDLL5711
CDLL5712
CDLL6263
CDLL6857
CDLL6858
146
1N5711UR-1, 1N5712UR-1, 1N6857UR-1,
1N6858UR-1, CDLL5711, CDLL5712, CDLL2810,
CDLL6263, CDLL6857 and CDLL6858
0 .2 .4 .6 .8 1.0 1.2
VF – FORWARD VOLTAGE (V)
Figure 1.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for the CDLL2810
and CDLL5712 Schottky Diodes.
0 .2 .4 .6 .8 1.0 1.2
VF – FORWARD VOLTAGE (V)
Figure 3.
I-V Curve Showing Typical
Forward Voltage Variation with
Temperature for Schottky Diode
CDLL5711.
0 5.0 10 15 20 25 30
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 2.
CDLL2810 and CDLL5712
Typical Variation of Reverse
Current (IR) vs. Reverse Voltage
(VR) at Various Temperatures.
01020 3040 50 60
VR – REVERSE VOLTAGE (V)
(PULSED)
Figure 4.
CDLL5711 Typical
Variation of Reverse Current (IR)
vs. Reverse Voltage (VR) at Various
Temperatures.
.1 1.0 10 100
IF – FORWARD CURRENT (mA)
(PULSED)
Figure 5.
Typical Dynamic
Resistance (RD) vs. Forward
Current (IF).
IF– FORWARD CURRENT (mA)
IF– FORWARD CURRENT (mA)
IR – REVERSE CURRENT (nA)
IR – REVERSE CURRENT (nA)
RD – DYNAMIC RESISTANCE (!!)
100
10
1.0
.1
.01
100,000
10,000
1000
1
10
1
50
10
5
1
.5
.1
.05
.01
1000
100
10
1
10,000
1000
100
10
1.0
