LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109 –1/3
MV2101~MV2115
1
3
2
CASE 318–08, STYLE 8
SOT– 23 (TO–236AB)
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2106 MV2108
MV2109 MV2111
MV2115
These devices are designed in the popular PLASTIC PACKAGE for
high volumerequirements of FM Radio and TV tuning and AFC, general
frequency control andtuning applications.They provide solid–state reliability
in replacement of mechanical tuning methods. Also available in Surface
Mount Package up to 33pF.
• High Q
• Controlled and Uniform Tuning Ratio
• Standard Capacitance Tolerance —10%
• Complete Typical Design Curves
Silicon Tuning Diode
MAXIMUM RATINGS(EACH DIODE)
Rating Symbol MV21XX MMBV21XXLT1 Unit
Reverse Voltage V R30 Vdc
Forward Current I F200 mAdc
Forward power Dissipation @T A = 25°C P D
280 225 m W
Derate above 25°C 2.8 1.8 mW/°C
Junction Temperature T J+150 °C
Storage Temperature Range T stg –55 to +150 °C
DEVICE MARKING
MMBV2101LT1=M4G MMBV2107LT1=4W
MMBV2103LT1=4H MMBV2108LT1=4X
MMBV2105LT1=4U MMBV2109L T1=4J
ELECTRICAL CHARACTERISTICS(TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Reverse Breakdown Voltage V (BR)R 30 — — Vdc
(IR=1.0µAdc)
Reverse Voltage Leakage Current I R— — 0.1 µAdc
(VR=25Vdc,TA=25°C)
Diode Capacitance Temperature Coefficient TCC— 280 — ppm/°C
(VR=4.0Vdc,f=1.0MHz)
6.8-100p
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
CATHODE 1
ANODE
LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109 –2/3
MV2101~MV2115
Min Nom M a x Ty p Min Typ Max
MMBV2101LT1/MV2101 6.1 6. 8 7. 5 450 2.5 2. 7 3 .2
MMBV2103LT1 9.0 10 11 40 0 2 .5 2.9 3.2
MV2104 10.8 12 13.2 400 2.5 2.9 3.2
MMBV2105LT1/MV2105 13.5 15 16.5 400 2.5 2.9 3.2
MMBV2107LT1 19.8 22 24.2 350 2.5 2.9 3.2
MMBV2108LT1/MV2108 24.3 27 29.7 300 2.5 3.0 3.2
MMBV2109LT1/MV2109 29.7 33 36.3 200 2.5 3.0 3.2
MV2111 42.3 47 51.7 150 2.5 3.0 3.2
MV2115 90 100 110 100 2.6 3.0 3.3
MMBV2101LT1, MMBV2103LT1, MMBV2105LT1, MMBV2107LT1 thru MMBV2109LT1, are also available in bulk.
Use the device title and drop the “T1” suffix when ordering any of these devices in bulk.
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
C T , Diode Capacitance
V R = 4.0 Vdc, f = 1.0 MHz
pF
T R, Tuning Ratio
C 2 /C 30
f = 1.0 MHz
Q, Figure of Merit
V R = 4.0 Vdc,
f = 50 MHz
P ARAMETER TEST METHODS
1. C T , DIODE CAPACITANCE
(C T = C C + C J ). C T is measured at 1.0 MHz using a
ca-pacitance bridge (Boonton Electronics Model
75A or equivalent).
2. T R, TUNING RATIO
T R is the ratio of C T measured at 2.0 Vdc divided by
C T measured at 30 Vdc.
3. Q, FIGURE OF MERIT
Q is calculated by taking the G and C readings of an
ad-mittance bridge at the specified frequency and
substitut-ing in the following equations:
Q = 2πfC
G
(Booton Electronics Model 33As8 or equivalent).Use
Lead Length
~
1/16”.
4.T CC,DIODE CAPACITANCE TEMPERATURE
COEFFICIENT
TCC is guaranteed by comparing CT at VR=4.0Vdc,f=1.0MHz,
TA= – 65°C with CT at VR=4.0Vdc,f=1.0MHz,TA= +85°C in the
following equation,which defines TC C:
CT(+85°C)– C
T(–65°C )10
6
TC C=85+65 . C T(25°C)
Accuracy limited by measurement of CT to±0.1pF.
Device
~
LESHAN RADIO COMPANY, LTD.
MMBV2101~MMBV2109 –3/3
MV2101~MV2115
TYPICAL DEVICE CHARACTERISTICS
MMBV2101LT1 MMBV2103LT1 MMBV2105LT1
MMBV2107LT1 MMBV2108LT1 MMBV2109LT1
MV2101 MV2104 MV2105 MV2108 MV2109
MV2111 MV2115
Figure 1. Diode Capacitance versus Reverse Voltage
Figure 2. Normalized Diode Capacitance versus
Junction Temperature Figure 3. Reverse Current versus Reverse Bias
Voltage
Figure 4. Figure of Merit versus Reverse Voltage
VR, REVERSE VOLTAGE (VOLTS)
1.0 2.00.2 10 3020
1.0
2.0
5.0
10
1000
50
20
100
500
5.0
0.5
0.1
200
CT, DIODE CAPACITANCE (pF)
MMBV2109LT1/MV2109
1.040
1.030
1.020
1.010
1.000
0.990
0.980
TJ, JUNCTION TEMPERATURE (°C)
+125-75 -25 0 +25 +50-50 +75
NORMALIZED DIODE CAPACITANCE
+100
0.970
0.960
VR = 2.0 Vdc
VR = 4.0 Vdc
VR = 30 Vdc
100
50
20
10
5.0
0.01
VR, REVERSE VOLTAGE (VOLTS)
5.0 10 2015 25
I
30
, REVERSE CURRENT (nA)
R
0.02
0.05
0.10
0.20
0.50
1.0
2.0
TA = 125°C
TA = 75°C
TA = 25°C
100
200
500
1000
5000
2000
1.0 2.0 5.0 7.0 10
3.0 20
VR, REVERSE VOLTAGE (VOLTS)
Q, FIGURE OF MERIT
2000
1000
200
500
300
100
f, FREQUENCY (MHz)
10 30 50 70
Q, FIGURE OF MERIT
100
3000
50
30
20
10 20 200 250
TA = 25°C
f = 50 MHz
MV2115
TA = 25°C
VR = 4.0 Vdc
MV2115
Figure 5. Figure of Merit versus Frequency
MMBV2105LT1/MV2105
MMBV2101LT1/MV2101
3.00.3
0
10
20
50
300
3000
30
30
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
5000
MMBV2101LT1/MV2101
MMBV2109LT1/MV2109
NORMALIZED TO CT
at TA = 25°C
VR = (CURVE)
MV2115
