ITT SEMICOND/ INTERMETA SOE D mm 4bA2711 000261? &64T MISI 1N4446 T+03-04 Silicon Epitaxial Planar Diode fast switching diode. 1 | max.1.9 This diode is also available in glass case DO-34 max.1.9% max Max ame Cathode Mark Cathode Mark Li IT [max.0.42 h min 6 e min.27.5 3.9 min 7 16 1 max. 0.52 These diodes are delivered taped. Glass case JEDEC DO-35 Glass case JEDEC DO-34 Details see Taping. 54 A 2 according to DIN 41880 Weight approx. 0.13 g Weight approx. 0.1 9 Dimensions in mm Dimensions in mm These diodes are branded on reel available branded or AMMOPAK in clear text or in international color code Absolute Maximum Ratings Symbol Value Unit Reverse Voltage Vr 75 Vv Peak Reverse Voltage Vrm 100 Vv Rectified Current (Average) lo 1501) mA Half Wave Rectification with Resist. Load at Tamb = 25 C and f >50 Hz Surge Forward Current at t<1s and Tj = 25 C lego 500 mA Power Dissipation at Tamp = 25 C case DO-35 Prot 5001) mW Power Dissipation at Tamp = 25 C case DO-34 Prot 3001) mw Junction Temperature case DO-35 T; 200 C Junction Temperature case DO-34 Tj 175 C Storage Temperature Range case DO-35 Ts 65 to +200 C Storage Temperature Range case DO-34 Ts 65to +175 C 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. 98 ITT SEMICOND/ INTERMETA SOE D M 4642711 00024148 716 MIST Characteristics at T, = 25 C Symbol Min. Typ. Max. Unit Forward Voltage Ve - - 1 Vv at lr = 10 mA Leakage Current at Va = 20V In - - 25 nA atVp=75V In - - 5 LA at Vp = 20 V, T, = 150 C Ir - , oc 50 LA Reverse Breakdown Voltage VBRIR 100 _ - Vv tested with 100 pA Pulses Capacitance Ctot - ho 4 pF at Ve = Va =0 Voltage Rise when Switching ON Ver - I= 2.5 Vv tested with 50 mA Forward Pulses tp = 0.1 us, Rise Time <30 ns, f, = 5 to 100 kHz Reverse Recovery Time ter - - 4 ns from Ir = 10 mA to la = 1 MA, VR =6V, R, = 100 2 Thermal Resistance case DO-35 Rtha - - 0.351) K/mW Junction to Ambient Air Thermal Resistance case DO-34 Rina - - 0.41) K/mWw Junction to Ambient Air Rectification Efficiency Ty 0.45 - - - at f = 100 MHz, Var = 2V 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature. {I 609 Vor =2V 2nF | 5kQ % Rectification Efficiency Measurement Circuit 99 ITT SEMICOND/ INTERMETA SOE D MM 4642731 0002819 bS2 mm Ist 1N4446 Forward characteristics Dynamic forward resistance versus forward current mA 1N4446 1N4446 7 T, = 100 C T= 25C 102 10 1 10 102 mA Admissible power dissipation Relative capacitance versus ambient temperature (case DO-35) versus reverse voltage Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature 1N4446 mw 1N4446 3000 rr 7,7 25C 900 Cio Ve) f =1MHz Crop (OV) 800 Prot 700 600 09 PS 500 N\ 400 300 200 Ne N 07 100 INQ 0 0 2 4 6 8 10V 0 100 200 C ip 100 ITT SEMICOND/ INTERMETA SOE D mm 4La?2711 o00e6eO 374 Mm ISI 1N4446 Leakage current versus junction temperature nA 1N4446 0 100 200 C oa Admissible repetitive peak forward current versus pulse duration (case DOQ-35) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature A 1N4446 vety/T T=1/p 01 , 2 s 104 2 5 103 2 5 Ws 101