2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Rev. V2 Features * Available in JAN, JANTX, JANTXV, JANS and JANSR 100K rads(Si) per MIL-PRF-19500/393 * TO-5 & TO-39 (TO-205AD) Package Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. V(BR)CEO Vdc 60 80 -- Off Characteristics Collector - Emitter Breakdown Voltage Collector - Emitter Cutoff Current Collector - Emitter Cutoff Current Emitter - Base Cutoff Current IC = 50 mAdc 2N3418, S, 2N3420, S 2N3419, S, 2N3421, S VCE = 80 Vdc, VBE = -0.5 Vdc 2N3418, S, 2N3420, S VCE = 120 Vdc, VBE = -0.5 Vdc 2N3419, S, 2N3421, S VCE = 45 2N3418, S, 2N3420, S VCE = 60 2N3419, S, 2N3421, S VEB = 6 Vdc, IC = 0 VEB = 8 Vdc, IC = 0 ICEX Adc -- 0.3 0.3 ICEO IEBO Adc Adc -- -- 5.0 5.0 0.5 10.0 On Characteristics1 Forward Current Transfer Ratio Base - Emitter Voltage Collector - Emitter Saturation Voltage IC = 100 mAdc, VCE = 2 Vdc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 1 Adc, VCE = 2 Vd 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 2 Adc, VCE = 2 Vdc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 5 Adc, VCE = 5 Vdc 2N3418, S, 2N3419, S 2N3420, S, 2N3421, S IC = 1 Adc, IB = 0.1 Adc IC = 2 Adc, IB = 0.2 Adc IC = 1 Adc, IB = 0.1 Adc IC = 2 Adc, IB = 0.2 Adc HFE - VBE(SAT) Vdc VCE(SAT) Vdc 1 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 20 40 -- -- 20 40 60 120 15 30 -- -- 10 15 0.6 0.7 -- -- 1.2 1.4 -- 0.25 0.50 2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Rev. V2 Electrical Characteristics Parameter Test Conditions Symbol Units Min. Max. Dynamic Characteristics Magnitude of Common Emitter Small-Signal Short-Circuit Forward Current Transfer Ratio IC = 0.1 Adc, VCE= 10 Vdc, f = 20 MHz | HFE | - 1.3 8.0 Output Capacitance VCB = 10 Vdc, IE = 0, 100 kHz f 1 MHz COBO pF -- 150 Delay Time Rise Time VBE (OFF) = -3.7 Vdc; IC = 1 Adc; IB2 = 100 mAdc TD TR s -- 0.08 0.22 Storage Time Fall Time VBE (OFF) = -3.7 Vdc; IC = 1 Adc; IB2 = 100 mAdc TS TF s -- 1.10 0.20 Switching Characteristics Safe Operating Area DC Tests: Test 1: Test 2: Test 3: TC = +100 C, I Cycle, t = 1.0 s VCE = 5 Vdc, IC = 3.0 Adc VCE = 37 Vdc, IC = 0.4 Adc VCE = 60 Vdc, IC = 0.185 mAdc 2N3418, S; 2N3420, S VCE = 80 Vdc, IC = 0.120 mAdc 2N3419, S; 2N3421, S Absolute Maximum Ratings Ratings Symbol Value 2N3418, S 2N3420, S Value 2N3419, S 2N3421, S Collector - Emitter Voltage VCEO 60 Vdc 80 Vdc Collector - Base Voltage VCBO 85 Vdc 125 Vdc Emitter - Base Voltage VEBO 8 Vdc IC 3 Adc 5 Adc PT 1W 5W TOP, TSTG -65C to +200C Collector Current TP 1 ms, duty cycle 50% Total Power Dissipation @ TA = 25C @ TC = 100C Operating & Storage Temperature Range 2 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Rev. V2 Outline Drawing (TO-5 & TO-39) Dimensions LTR Inches Millimeters Note MIN MAX MIN MAX CD 0.305 0.335 7.75 8.51 -- CH 0.240 0.260 6.10 6.60 -- HD 0.335 0.370 8.51 9.40 -- LC 0.200 TP 5.08 TP 7 LD 0.016 0.019 0.041 0.048 8, 9 LL 0.500 0.750 12.7 19.05 -- LU 0.016 0.019 0.041 0.048 8, 9 L1 -- 0.050 -- 1.27 8, 9 L2 0.250 -- 6.35 -- 8, 9 P 0.100 -- 2.54 -- 7 Q -- 0.030 -- 0.76 5 TL 0.029 0.045 0.74 1.14 -- TW 0.028 0.034 0.71 0.86 -- r -- 0.010 -- 0.25 10 a 45 TP 45 TP 7 1, 2, 10, 12, 13, 14 1. 2. 3. 4. 5. 6. 7. Dimensions are in inches. Millimeters are given for general information only. Beyond r (radius) maximum, TW shall be held for a minimum length of .011 (0.28 mm). Dimension TL measured from maximum HD. Body contour optional within zone defined by HD, CD, and Q. CD shall not vary more than .010 inch (0.25 mm) in zone P. This zone is controlled for automatic handling. Leads at gauge plane .054 +.001 -.000 inch (1.37 +0.03 -0.00 mm) below seating plane shall be within 0.007 inch (0.18 mm) radius of true position (TP) at maximum material condition (MMC) relative to tab at MMC. The device may be measured by direct methods or by gauging procedure. 8. Dimension LU applies between L, and L,. Dimension LD applies between L, and LL minimum. Diameter is uncontrolled in and beyond LL minimum. 9. All three leads. 10. The collector shall be internally connected to the case. 11. Dimension r (radius) applies to both inside corners of tab. 12. In accordance with ASME Y14.5M, diameters are equivalent to x symbology. 13. Lead 1 = emitter, lead 2 = base, lead 3 = collector. 14. For non-S-suffix devices (T0-5), dimension LL = 1.5 inches (38.10 mm) min. and 1.75 inches (44.45 mm) max. For S-suffix types (T0-39), dimension LL = 0.5 inch (12.70 mm) min. and 750 inch (19.05 mm) max. 3 VPT Components and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. Visit www.vptcomponents.com for additional data sheets and product information. For further information and support please visit: www.vptcomponents.com 2N3418(S) - 2N3421(S) Series NPN Medium Power Silicon Transistor Rev. V2 VPT Components All rights reserved. Information in this document is provided in connection with VPT Components' products. These materials are provided by VPT Components as a service to its customers and may be used for informational purposes only. Except as provided in VPT Components' Terms and Conditions of Sale for such products or in any separate agreement related to this document, VPT Components assumes no liability whatsoever. VPT Components assumes no responsibility for errors or omissions in these materials. 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