IXTA26P20P - IXYS - Datasheet.Directory

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C - 200 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ- 200 V

VGSS Continuous ±20 V

VGSM Transient ±30 V

ID25 TC= 25°C - 26 A

IDM TC= 25°C, Pulse Width Limited by TJM - 70 A

IATC= 25°C - 26 A

EAS TC= 25°C 1.5 J

dv/dt IS≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C 10 V/ns

PDTC= 25°C 300 W

TJ- 55 ... +150 °C

TJM 150 °C

Tstg - 55 ... +150 °C

TL1.6mm (0.062 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-3P,TO-220 &TO-247) 1.13/10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

TO-3P 5.5 g

TO-247 6.0 g

DS99913D(01/13)

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = - 250μA - 200 V

VGS(th) VDS = VGS, ID = - 250μA - 2.0 - 4.0 V

IGSS VGS = ±20V, VDS = 0V ±100 nA

IDSS VDS = VDSS, VGS= 0V - 10 μA

TJ = 125°C -150 μA

RDS(on) VGS = -10V, ID = 0.5 • ID25, Note 1 170 mΩ

PolarPTM

Power MOSFETs

P-Channel Enhancement Mode

Avalanche Rated

IXTA26P20P

IXTP26P20P

IXTQ26P20P

IXTH26P20P

VDSS = - 200V

ID25 = - 26A

RDS(on) ≤≤

≤≤

≤ 170mΩΩ

ΩΩ

Ω

TO-263 AA (IXTA)

G

S

D (Tab)

TO-220AB (IXTP)

D (Tab)

S

D

G

G = Gate D = Drain

S = Source Tab = Drain

TO-247 (IXTH)

G

S

DD (Tab)

TO-3P (IXTQ)

D

G

SD (Tab)

Features

zInternational Standard Packages

zAvalanche Rated

zRugged PolarPTM Process

zLow Package Inductance

zFast Intrinsic Diode

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

Applications

zHigh-Side Switches

zPush Pull Amplifiers

zDC Choppers

zAutomatic Test Equipment

zCurrent Regulators

IXTA26P20P IXTP26P20P

IXTQ26P20P IXTH26P20P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = -10V, ID = 0.5 • ID25, Note 1 10 17 S

Ciss 2740 pF

Coss VGS = 0V, VDS = -25V, f = 1MHz 540 pF

Crss 100 pF

td(on) 18 ns

tr 33 ns

td(off) 46 ns

tf 21 ns

Qg(on) 56 nC

Qgs VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 18 nC

Qgd 20 nC

RthJC 0.42 °C/W

RthCS (TO-3P & TO-247) 0.21 °C/W

(TO-220) 0.50 °C/W

Safe Operating Area Specification

Symbol Test Conditions Characteristic Values

Min. Typ. Max.

SOA VDS = - 200V, ID = - 0.8A, TC = 70°C, Tp = 5s 160 W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V - 26 A

ISM Repetitive, Pulse Width Limited by TJM - 104 A

VSD IF = -13A, VGS = 0V, Note 1 - 3.2 V

trr 240 ns

QRM 2.2 μC

IRM -18.0 A

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Note 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

Resistive Switching Times

VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 3.3Ω (External)

IF = -13A, -di/dt = -100A/μs

VR = -100V, VGS = 0V

Pins: 1 - Gate 2 - Drain

TO-220 Outline

IXTA26P20P IXTP26P20P

IXTQ26P20P IXTH26P20P

TO-3P Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.7 5.3 .185 .209

A12.2 2.54 .087 .102

A22.2 2.6 .059 .098

b 1.0 1.4 .040 .055

b11.65 2.13 .065 .084

b22.87 3.12 .113 .123

C .4 .8 .016 .031

D 20.80 21.46 .819 .845

E 15.75 16.26 .610 .640

e 5.20 5.72 0.205 0.225

L 19.81 20.32 .780 .800

L1 4.50 .177

∅P 3.55 3.65 .140 .144

Q 5.89 6.40 0.232 0.252

R 4.32 5.49 .170 .216

TO-247 Outline

Terminals: 1 - Gate 2 - Drain

e

∅ P

1 2 3

TO-263 Outline

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom

Side

IXTA26P20P IXTP26P20P

IXTQ26P20P IXTH26P20P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

Fi g . 1. Ou tput C haracteristi cs @ T

J

= 25ºC

-28

-24

-20

-16

-12

-8

-4

0-4.5-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.50.0

V

DS

- Volts

I

D

- Ampere s

V

GS

= - 10V

- 8V

- 5

V

- 6

V

-7

V

Fi g . 2. Exte n d ed Ou tput Char acter istics @ T

J

= 25ºC

-90

-80

-70

-60

-50

-40

-30

-20

-10

0-30-25-20-15-10-50

V

DS

- V o lt s

I

D

- Amperes

V

GS

= -10V

- 9V

- 8

V

- 6

V

- 7

V

- 5

V

Fi g . 3. Ou tp ut Characteristi cs @ T

J

= 125º C

-28

-24

-20

-16

-12

-8

-4

0-9-8-7-6-5-4-3-2-10

V

DS

- Volts

I

D

- Amperes

V

GS

= -10V

- 8V

- 6

V

- 5

V

- 7V

Fig. 4. R

DS(on)

Normalized to I

D

= -13A Value vs.

Junction T emperature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

-50-250255075100125150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= -10V

I

D

= - 26

A

I

D

= -13

A

Fig. 5. R

DS(on)

Normalized to I

D

= -13A Valu e vs.

Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

-80-70-60-50-40-30-20-100

I

D

- Amp e res

R

DS(on)

- Normalized

V

GS

= -10V

T

J

= 25ºC

T

J

= 125ºC

Fi g. 6. Maximu m D r ai n Cu rren t vs.

Case T emperatu re

-28

-24

-20

-16

-12

-8

-4

0-50 -25 0 25 50 75 100 125 150

T

C

- Deg ree s Centigrad e

I

D

- Ampe res

IXTA26P20P IXTP26P20P

IXTQ26P20P IXTH26P20P

Fi g . 7. I n p u t Admittan ce

-45

-40

-35

-30

-25

-20

-15

-10

-5

0-7.0-6.5-6.0-5.5-5.0-4.5-4.0-3.5-3.0

V

GS

- Volt s

I

D

- Amperes

T

J

= - 40ºC

25ºC

125ºC

Fig. 8. Transconductance

0

4

8

12

16

20

24

28

32

-50-45-40-35-30-25-20-15-10-50

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

-80

-70

-60

-50

-40

-30

-20

-10

0-4.0-3.5-3.0-2.5-2.0-1.5-1.0-0.5

V

SD

- Volt s

I

S

- Amper es

T

J

= 125ºC

T

J

= 25ºC

Fi g . 10. Gate C h ar g e

-10

-9

-8

-7

-6

-5

-4

-3

-2

-1

00 5 10 15 20 25 30 35 40 45 50 55 60

Q

G

- NanoCoul ombs

V

GS

- Volt s

V

DS

= -100V

I

D

= -13A

I

G

= -1mA

Fi g . 11. C ap aci tan ce

10

100

1,000

10,000

-40-35-30-25-20-15-10-50

V

DS

- V olts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 12. Maximu m Tran si en t Th er mal I mped an ce

0.01

0.10

1.00

0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- º C / W

IXTA26P20P IXTP26P20P

IXTQ26P20P IXTH26P20P

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXYS REF: T_26P20P(B5)7-28-09-C

Fi g . 13. Fo r wa rd -B i as Safe Op er at in g Area

@ T

C

= 25ºC

0.1

1.0

10.0

100.0

1 10 100 1000

V

DS

- V o lt s

I

D

- Amp eres

T

J

= 150ºC

T

C

= 25ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

-

----

100ms

-

Fi g. 14 . F o rward-Bias Safe O p er ati ng Ar ea

@ T

C

= 70º C

0.1

1.0

10.0

100.0

1 10 100 1000

V

DS

- Volt s

I

D

- Amp eres

T

J

= 150ºC

T

C

= 70ºC

Single Pulse

25µs

1ms

100µs

R

DS(on)

Limit

10ms

DC

-

----

100ms

-