GaAs INFRARED EMITTING DIODE OPTOELECTAOQNICS CQX14, CQX16 SEATING The CQX14/16 are 940nm LEDs in narrow angle, TO-46 PLANE) packages. = Good optical to mechanical alignment INCHES _| MILLIMETERS . SYMBOL vIn | MACT Min, MAC NOTES m Mechanically and wavelength matched to TO-18 A 255 6.47 phototransistor b 016 | 021 | 407 | 533 D 209 | .230 | 5.31 | 5.84 m Hermetically sealed package Dd, | 180 | 187 | 4.52 | 4.77 High irradiance level @ JOONOM. [| 2.54NOM. 2 1 et e | .0s0NOM. | 127NOM. 12 @ European Pro Electron registered h 030 76 j 031 | .044 79 | 1.11 036 | .046 $2 | 1.16 1 3 ( , ! ANODE CATHODE (CONNECTED TO CASE) stie04 NOTES: 1. MEASURED FROM MAXIMUM DIAMETER OF DEVICE. 2. LEADS HAVING MAXIMUM DIAMETER .021 (.533mm) MEASURED IN GAUGING PLANE .054" + .001 .000 (137 + 025 000mm) BELOW THE REFERENCE PLANE OF THE DEVICE SHALL BE WITHIN .007 (.778mm) THEIR TRUE POSITION RELATIVE TO MAXIMUM WIDTH TAB. 3. FROM CENTERLINE TAB. OPTOELECTRONICS GaAs INFRARED EMITTING DIODE 65C to +150C 65C to +125C Soldering: Lead Temperature (Iron) 2.0.0... cece eer e eee e net eeeneeeenes 240C for 5 sec.9756 Lead Temperature (Flow) ...... 0.0.0... 0 0c e ete eenenteenenees 260C for 10 sec.*** Continuous Forward Current... 0... cece ccc ect e neve e ne eeetenunttnrternees 100 mA Forward Current (pw, 1 S; 200 Hz) 2... cece e renee cee c etn e center nerenrenees 10A Reverse Voltage 0 cence een tence nent ene eeeevnteentenutebneenas 3 Volts Power Dissipation (Ty = 25C) 0.0.0... ccc cece ence eve vneeuetteveevutevnnes 170 mw" Power Dissipation (Tc = 25C) 2.2.0.0. c cece cen even eee en een entnttncenenns 1.3 We! PARAMETER SYMBOL . . . TEST CONDITIONS Forward Voltage Ve . V |; = 100 mA Reverse Leakage Current la BA Va=3V Peak Emission Wavelength Ap nm |; = 100 mA Emission Angle at 12 Power a + Degrees Total Power CQX14 Py mw I. = 100 mA Total Power COX16 . mw I. = 100 mA Rise Time 0-90% of output . Bs Fall Time 100-10% of output . us Derate power dissipation linearly 1.70MW/C above 25C ambient. Derate power dissipation linearly 13.0mW/C above 25C case. RMA flux is recommended. , Methanol or lsopranol alcohols are recommended as cleaning agents. . Soldering iron tip Vie (1.6 mm) minimum from housing. As long as leads are not under any stress or spring tension. . Total power output, Po, is the total power radiated by the device into a solid angle of 21 steradians. NOAA wmf OPTOELECTRONICS GaAs INFRARED EMITTING DIODE 100, 33] 14 20 12 PS 0 et oy tons 5. current fH 5 to e A 5 E Bo vo & NN & CONTINUOUS y OB zi. URRENT zg N & Ht 8 PN Bo i Ht 2 06 3 tt 3 do LY yomuaueo 5 2 Z Tas 25C Sos aw oO. > & % NORMALIZED TO NN 7 Tps100ma 0.0! Ta 25C 02 0.02 2.0) oy 1001 002 oO 0 02 ae) ol 02 os Lo 10 -80 -2 o 23 sO TS 100 rs] BO IF- FORWARD CURRENT~AMPERES T1271 Ta-AMBIENT TEMPERATURE -*C Fig. 1. Power Output vs. input Current s Fig. 2. Power Output vs. Temperature ST1276 10 oo bo Bo . 60 re Ft 60 a Zz FA 40 Lo ra 40 ys 20 4 g f / & La ry Zz, | z L Zou a 5 20 ( 08 a z 06 rain a [vor 2src -58C E 04 5 a & 7 7 2 oz f BS 7 F t : 2 6 7 7 7 & g i i 2 vo z qT q 08 t = * ost a" IL / [ 04 f / / y oe V / / 01 , 4 f a 1 z 4 3 6 9 10 . 0 - L2 13 ry 5 Ve~ FORWARD VOLTAGE - VOLTS Vp~ FORWARD VOLTAGE VOLTS Fig. 3. Forward Voltage vs. Forward Current 871272 Fig. 4. Forward Voltage vs. Forward Current 871275 100 5 3 o = 60 { 5 Q = 3 w y 4 = < 20 56 x 20 10 } 10 20 x 40 50 @-ANGULAR DISPLACEMENT FROM OPTICAL AXIS OEGREES Fig. 5. Typical Radiation Pattern $11273