PHP191NQ06LT,127 - NEXPERIA - Datasheet.Directory

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On 7 February 2017 the former NXP Standard Product business became a new company with the

tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS

semiconductors with its focus on the automotive, industrial, computing, consumer and wearable

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In data sheets and application notes which still contain NXP or Philips Semiconductors references, use

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Team Nexperia

PHP191NQ06LT

N-channel TrenchMOS logic level FET

Rev. 02 — 14 January 2010 Product data sheet

1. Product profile

1.1 General description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic

package using TrenchMOS technology. This product is designed and qualified for use in

computing, communications, consumer and industria l applications only.

1.2 Features and benefits

Low conduction losses due to low

on-state resistance

Suitable for logic level gate drive

sources

1.3 Applications

DC-to-DC convertors

General industrial applications

Motors, lamps and soleno ids

Uninterruptible power supplies

1.4 Quick reference data

Table 1. Quick reference

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - - 55 V

IDdrain current Tmb =25°C; V

GS =10V;

see Figure 1 and 3--75A

Ptot total power

dissipation Tmb = 25 °C; see Figure 2 - - 300 W

Dynamic characteristics

QGD gate-drain charge VGS =5V; I

D=25A;

VDS =44V; T

j=25°C;

see Figure 11

- 37.6 - nC

Static characteristics

RDSon drain-source

on-state resistance VGS =10V; I

D=25A;

Tj= 25 °C; see Figure 10

and 9

-3.13.7mΩ

Product data sheet Rev. 02 — 14 January 2010 2 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

2. Pinning information

3. Ordering information

4. Limiting values

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1G gate

SOT78 (T O - 22 0 A B )

2D drain

3S source

mb D mounting base; connected to

drain

bb076

Table 3. Orderi ng informatio n

Type number Package

Name Description Version

PHP191NQ06L T T O-220AB plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead

TO-220AB SOT78

Table 4. Limiting values

In accordance with the Absolute Maxi mum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤175 °C - 55 V

VDGR drain-gate voltage Tj≥25 °C; Tj≤175 °C; RGS =20kΩ-55V

VGS gate-source voltage -15 15 V

IDdrain current VGS =10V; T

mb = 100 °C; see Figure 1 -75A

VGS =10V; T

mb =25°C; see Figure 1 and 3-75A

IDM peak drain current tp≤10 µs; pulsed; Tmb =25°C; see Figure 3 -240A

Ptot total power dissipation Tmb =25°C; see Figure 2 -300W

Tstg storage temperature -55 175 °C

Tjjunction temperature -55 175 °C

Source-drain diode

ISsource current Tmb =25°C - 75 A

ISM peak source current tp≤10 µs; pulsed; Tmb =25°C - 240 A

Avalanche rugg edness

EDS(AL)S non-repetitive

drain-source avalanche

energy

VGS =10V; T

j(init) =25°C; I

D=75A; V

sup ≤55 V;

unclamped; RGS =50Ω; tp≤0.21 ms -560mJ

Product data sheet Rev. 02 — 14 January 2010 3 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

Fig 1. Normalized continuous drain current as a

function of mounting base temperature Fig 2. Normalized total power dissipation as a

function of mounting base temperature

Fig 3. Safe operating area; continuous and peak drain curren ts as a function of drain-source voltage

03aq99

120

0 50 100 150 200

Ider

(%)

Tmb (°C) Tmb (°C)

0 20015050 100

03aa16

120

Pder

(%)

03ar01

VDS (V)

1 102

102

103

(A)

100 ms

10 ms

1 ms

tp = 10 μs

100 μs

Limit RDSon = VDS /ID

Product data sheet Rev. 02 — 14 January 2010 4 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

5. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction

to mounting base see Figure 4 --0.5K/W

Rth(j-a) thermal resistance from junction

to ambie nt vertical in still air - 60 - K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration

0.2

03ar00

tp (s)

10−4110−1

10−310−2

10−1

Zth(j-mb)

(K/W)

10−2

δ = 0.5

0.1

0.05

0.02 single pulse

δ =

Product data sheet Rev. 02 — 14 January 2010 5 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source

breakdown voltage ID=250µA; V

GS =0V; T

j=-55°C 50 - - V

ID=250µA; V

GS =0V; T

j=25°C 55 - - V

VGS(th) gate-source threshold

voltage ID=1mA; V

DS = VGS; Tj=-55°C;

see Figure 7 and 8--2.2V

ID=1mA; V

DS = VGS; Tj= 175 °C;

see Figure 7 and 80.5 - - V

ID=1mA; V

DS = VGS; Tj=25°C;

see Figure 7 and 811.52V

IDSS drain leakage current VDS =55V; V

GS =0V; T

j=25°C --1µA

VDS =55V; V

GS =0V; T

j= 175 °C - - 500 µA

IGSS gate leakage current VGS =15V; V

DS =0V; T

j= 25 °C - 2 100 nA

VGS =-15V; V

DS =0V; T

j= 25 °C - 2 100 nA

RDSon drain-source on-state

resistance VGS =4.5V; I

D=25A; T

j=25°C;

see Figure 9 --4.4mΩ

VGS =5V; I

D=25A; T

j=25°C;

see Figure 10 and 9-3.54.2mΩ

VGS =10V; I

D=25A; T

j= 175 °C;

see Figure 10 and 9--7.4mΩ

VGS =10V; I

D=25A; T

j=25°C;

see Figure 10 and 9-3.13.7mΩ

Dynamic character i stics

QG(tot) total gate charge ID=25A; V

DS =44V; V

GS =5V;

Tj=25°C; see Figure 11 - 95.6 - nC

QGS gate-source charge - 17.2 - nC

QGD gate-drain charge - 37.6 - nC

Ciss input capacitance VDS =25V; V

GS = 0 V; f = 1 MHz;

Tj=25°C; see Figure 12 - 7665 - pF

Coss output capacitance - 1045 - pF

Crss reverse transfer

capacitance - 465 - pF

td(on) turn-on delay time VDS =30V; R

L=1.2Ω; VGS =5V;

RG(ext) =10Ω; Tj=25°C -63-ns

trrise time - 232 - ns

td(off) turn-off delay time - 273 - ns

tffall time - 178 - ns

Source-drain diode

VSD source-drain voltage IS=25A; V

GS =0V; T

j=25°C;

see Figure 13 - 0.79 1.2 V

trr reverse recovery time IS=20A; dI

S/dt = -100 A/µs; VGS =0V;

VDS =25V; T

j=25°C -78-ns

Qrrecovered charge - 171 - nC

Product data sheet Rev. 02 — 14 January 2010 6 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

Fig 5. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 6. Transfer characteristics: drain current as a

function of gate-source vo ltage; typical values

Fig 7. Gate-source threshold voltage as a function of

junction temperature Fig 8. Sub-threshold drain current as a function of

gate-source voltage

03ar02

160

240

0 0.5 1 1.5 2

VDS (V)

(A)

Tj = 25 °C

VGS = 2.4 V

10 V

3.2 V

2.8 V

5 V

3.6 V4 V

03ar04

0123

VGS (V)

(A)

VDS > ID x RDSon

Tj = 175 °C 25 °C

03aa33

0.5

1.5

2.5

-60 0 60 120 180

Tj (°C)

VGS(th)

(V)

max

typ

min

03aa36

10-6

10-5

10-4

10-3

10-2

10-1

0123

VGS (V)

(A)

maxtypmin

Product data sheet Rev. 02 — 14 January 2010 7 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

Fig 9. Normalized drain-source on-state resistance

factor as a function of junction temperature Fig 10. Drain-source on-state resistance as a function

of drain current; typical values

Fig 11. Gate-source voltage as a function of gate

charge; typical values Fig 12. Sub-threshold drain current as a function of

gate-source voltage

03ne89

0.5

1.5

-60 0 60 120 180

Tj (°C)

03ar03

0 80 160 240

ID (A)

RDSon

(mΩ)

VGS = 3.2 VTj = 25 °C

10 V

5 V

3.6 V

4 V

03ar07

0 50 100 150 200

(nC)

VGS

(V)

ID = 25 A

Tj = 25 °C

VDD = 44 V14 V

03ar06

102

103

104

105

10−1 1 10 102

VDS (V)

(pF)

Ciss

Coss

Crss

Product data sheet Rev. 02 — 14 January 2010 8 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

Fig 13. Sourc e current as a function of source-dr ain vo ltage; typical values

03ar05

0 0.3 0.6 0.9 1.2

VSD (V)

(A)

Tj = 25 °C175 °C

VGS = 0 V

Product data sheet Rev. 02 — 14 January 2010 9 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

7. Package outline

Fig 14. Package outline SOT78 (TO-220AB)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT78 SC-46

3-lead TO-220AB

SOT7

08-04-23

08-06-13

Notes

1. Lead shoulder designs may vary.

2. Dimension includes excess dambar.

UNIT A

mm 4.7

4.1

1.40

1.25

0.9

0.6

0.7

0.4

16.0

15.2

6.6

5.9

10.3

9.7

15.0

12.8

3.30

2.79

3.8

3.5

DIMENSIONS (mm are the original dimensions)

lastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB

0 5 10 mm

scale

b b1(2)

1.6

1.0

c D

1.3

1.0

b2(2) D1E e

2.54

L L1(1) L2(1)

max.

3.0

p q

3.0

2.7

2.6

2.2

123

L1(1)

b1(2)

(3×)

b2(2)

(2×)

b(3×)

L2(1)

mounting

base

Product data sheet Rev. 02 — 14 January 2010 10 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PHP191NQ06LT_2 20100114 Product data sheet - PHP_PHB191NQ06LT-01

Modifications: •The format of this data sheet has been redesigned to comply with the new identity

guidelines of NXP Semiconductors.

•Legal texts have been adapted to the new company name where appropriate .

•Type number PHP191NQ06LT separated from data sheet PHP_PHB191NQ06LT-01.

PHP_PHB191NQ06LT-01

(9397 750 13168) 20040505 Product data sheet - -

Product data sheet Rev. 02 — 14 January 2010 11 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued document before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest pro duct

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warrant ies as to t he accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sheet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not b e relied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre va il.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agr eed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this document is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warrant ies, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitation - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semiconductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semiconductors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersedes and replaces all informa tion supplied prior

to the publication hereof .

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in medical, military, aircraft,

space or life support equipment, nor in applicati ons where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Applications — Applications that are described herein for any of these

products are for il lustrative purposes only. NXP Semiconductors makes no

representation or warranty that such applications will be suitable for the

specified use without further testing or modification.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on a weakness or default in the

customer application /use or t he application/use of customer’s third party

customer(s) (hereinafter both referred to as “Application”). It is customer’s

sole responsibility to check whether the NXP Semiconductors product is

suitable and fit for the Appl ica tion plann ed. Customer has to do all necessary

testing for the Application in order to avoid a def ault of the Applicat ion and the

product. NXP Semiconductors does not accept any liability in this respect.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanently and irreversibly affect

the quality and reliability of the device.

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individua l agreement. In case an individual

agreement is concluded only the ter ms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document may be interpreted or

construed as an of fer t o sell product s that is open for accept ance or the gr ant,

conveyance or implication of any license under any copyrights, patents or

other industrial or intellectual property right s.

Document status [1][2] Product status[3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.

Product [short] dat a sheet Production This document contains the product specification.

Product data sheet Rev. 02 — 14 January 2010 12 of 13

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

Export control — This document as well as the item(s) descri bed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from national authorities.

Non-automotive qualified products — Unless the data sheet of an NXP

Semiconductors product expressly states that the product is automotive

qualified, the product is not suitable for automotive use. It is neither qualified

nor tested in accordan ce with a uto moti ve t estin g or ap plicat ion requiremen ts.

NXP Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in auto motive equipment or applications. In

the event that cust omer uses the product for design-in and use in automot ive

applications to automotive specifica tions and standards, customer (a) shall

use the product without NXP Semiconductors’ warranty of the product for

such automotive applications, use and specifications, and (b) whenever

customer uses the product for automotive application s beyond NXP

Semiconductors’ specifications such use shall be solely at customer’s own

risk, and (c) customer fully indemnifies NXP Semiconductors for any liability,

damages or failed product claims resulting from customer design and use of

the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All refe renced brands, produc t names, service names and trademarks

are the property of their respective ow ners.

TrenchMOS — is a trademark of NXP B.V.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PHP191NQ06LT

N-channel TrenchMOS logic level FET

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 14 January 2010

Document identifier: PHP191NQ06LT_2

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . .9

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .10

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .11

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .11

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .11

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

10 Contact information. . . . . . . . . . . . . . . . . . . . . .12