STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND N-channel 600 V - 0.25 typ., 13 A FDmeshTM II Power MOSFET (with fast diode) in D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data Features TAB Order codes 3 1 VDSS @ TJmax RDS(on) max ID 650 V <0.29 13 A 3 D2PAK 1 2 STB18NM60ND TO-220FP STF18NM60ND STP18NM60ND TAB STW18NM60ND 3 1 2 2 3 * 100% avalanche tested 1 TO-220 * The worldwide best RDS(on)* area amongst the fast recovery diode devices * Low input capacitance and gate charge TO-247 * Low gate input resistance Figure 1. Internal schematic diagram ' 7$% * Extremely high dv/dt and avalanche capabilities Applications * Switching applications * Description 6 $0Y These FDmeshTM II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmeshTM technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance and superior switching performance. They are ideal for bridge topologies and ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging D2PAK Tape and reel STB18NM60ND STF18NM60ND 18NM60ND TO-220FP STP18NM60ND TO-220 STW18NM60ND TO-247 May 2013 This is information on a product in full production. DocID024653 Rev 1 Tube 1/22 www.st.com 22 Contents STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 2/22 ................................................ 9 DocID024653 Rev 1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D2PAK, TO220, TO-247 TO-220FP VDS Drain-source voltage 600 V VGS Gate-source voltage 25 V ID Drain current (continuous) at TC = 25 C 13 13 (1) A ID Drain current (continuous) at TC = 100 C 8.19 8.19 (1) A IDM (2) Drain current (pulsed) 52 52 (1) A PTOT Total dissipation at TC = 25 C 130 30 W dv/dt (3) dv/dt (4) Peak diode recovery voltage slope 40 V/ns MOSFET dv/dt ruggedness 40 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 C) Tstg Storage temperature Tj -- 2500 V -55 to 150 C 150 C Operating junction temperature 1. Limited by maximum junction temperature 2. Pulse width limited by safe operating area 3. ISD 13 A, di/dt 400 A/s, VDD = 80% V(BR)DSS, VDS(peak) V(BR)DSS 4. VDS 480 V Table 3. Thermal data Symbol Parameter DPAK Rthj-case Thermal resistance junction-case max 0.96 Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max TO-220FP TO-220 TO-247 4.17 0.96 62.5 30 Unit 0.96 C/W 50 C/W C/W Table 4. Avalanche characteristics Symbol Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 3.5 A EAS Single pulse avalanche energy (starting Tj = 25 C, ID = IAS, VDD = 50 V) 187 mJ DocID024653 Rev 1 3/22 Electrical characteristics 2 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS= 0 Min. Typ. Max. 600 Unit V VDS = 600 V, VDS = 600 V, TC=125 C 1 100 A A Gate body leakage current (VDS = 0) VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 A 4 5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 6.5 A 0.25 0.29 Min. Typ. Max. Unit - 1030 - pF - 30 - pF - 3.2 - pF IDSS Zero gate voltage drain current (VGS = 0) IGSS 3 Table 6. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Test conditions VDS = 50 V, f =1 MHz, VGS = 0 Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VGS = 0, VDS = 0V to 480 V - 148 - pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain - 3.6 - Qg Total gate charge VDD = 480 V, ID = 13 A - 34 - nC Qgs Gate-source charge VGS = 10 V - 5.5 - nC Gate-drain charge (see Figure 18) - 20 - nC Qgd 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/22 DocID024653 Rev 1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Electrical characteristics Table 7. Switching times Symbol td(on) tr td(off) tf Parameter Test conditions Turn-on delay time VDD = 300 V, ID = 6.5 A, Rise time RG = 4.7 , VGS = 10 V Turn-off delay time (see Figure 17) Fall time Min Typ Max Unit - 55 - ns - 15.5 - ns - 13 - ns - 18 - ns Min Typ Max Unit Table 8. Source drain diode Symbol ISD Parameter Test conditions Source-drain current - 13 A ISDM (1) Source-drain current (pulsed) - 52 A VSD(2) Forward on voltage - 1.6 V ISD = 13 A, VGS=0 trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD =13 A, di/dt =100 A/s, VDD = 100 V (see Figure 19) VDD = 100 V di/dt =100 A/s, ISD = 13 A Tj = 150 C (see Figure 19) - 136 ns - 843 nC - 12.5 A - 198 ns - 1425 nC - 14.5 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% DocID024653 Rev 1 5/22 Electrical characteristics 2.1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Electrical characteristics (curves) Figure 2. Safe operating area for D2PAK and TO-220 Figure 3. Thermal impedance for D2PAK and TO-220 AM15785v1 Op Lim erat ite ion d b in y m this ax are a R is ID (A) DS (o n) 10 10s 100s 1ms 1 Tj=150C Tc=25C 10ms Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP AM15786v1 ID (A) s ai re n) si a DS(o th R in ax n it o y m b a er ed Op mit i L 10 1 10s 100s 1ms 10ms Tj=150C Tc=25C 0.1 Single pulse 0.01 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 AM15787v1 is ID (A) ) 10s DS (on Op Lim erat ite ion d b in y m this ax are a R 10 1 100s 1ms Tj=150C Tc=25C 10ms Single pulse 0.1 0.1 6/22 1 10 100 VDS(V) DocID024653 Rev 1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Figure 8. Output characteristics Figure 9. Transfer characteristics AM15788v1 ID (A) 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 VGS=7, 8, 9, 10V 6V 5V 4V 5 15 10 20 VDS(V) Figure 10. Gate charge vs gate-source voltage AM15791v1 VDS VGS (V) (V) VDD=480V ID=13A VDS ID (A) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 8 400 0.260 6 300 0.255 4 200 0.250 2 100 0.245 8 24 16 32 0 Qg(nC) Figure 12. Capacitance variations 2 4 10 8 6 VGS(V) AM15790v1 0.240 0 VGS=10V 4 2 8 6 10 12 ID(A) Figure 13. Normalized gate threshold voltage vs. temperature AM15792v1 C (pF) VDS=18V RDS(on) () 0.265 0 0 AM15789v1 Figure 11. Static drain-source on-resistance 500 10 Electrical characteristics AM15793v1 VGS(th) (norm) ID=250 A 1.10 Ciss 1000 1.05 1.00 0.95 100 0.90 Coss 0.85 10 0.80 Crss 1 0.1 1 10 100 VDS(V) 0.75 0.70 -50 -25 DocID024653 Rev 1 0 25 50 75 100 125 TJ(C) 7/22 Electrical characteristics STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Figure 14. Normalized on-resistance vs temperature Figure 15. Source-drain diode forward characteristics AM15794v1 RDS(on) AM15795v1 VSD (V) (norm) TJ=-50C ID=13 A 2.1 1.2 1.9 1.7 TJ=25C 1 1.5 1.3 TJ=150C 0.8 1.1 0.9 0.6 0.7 0.5 -50 -25 0 25 50 75 100 125 TJ(C) 0.4 0 Figure 16. Normalized VDS vs temperature AM15796v1 VDS (norm) ID=1mA 1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 -50 -25 8/22 0 25 50 75 100 125 TJ(C) DocID024653 Rev 1 2 4 6 8 10 12 ISD(A) STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND 3 Test circuit Test circuit Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit Figure 19. Test circuit for inductive load switching and diode recovery times Figure 20. Unclamped Inductive load test circuit Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform DocID024653 Rev 1 9/22 Package mechanical data 4 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10/22 DocID024653 Rev 1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Table 9. Package mechanical data DPAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0 8 DocID024653 Rev 1 11/22 Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Figure 23. DPAK (TO-263) drawing 0079457_T Figure 24. DPAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimension are in millimeters 12/22 DocID024653 Rev 1 Footprint STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Table 10. Package mechanical data TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024653 Rev 1 13/22 Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Figure 25. TO-220FP drawing 7012510_Rev_K_B 14/22 DocID024653 Rev 1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Table 11. Package mechanical data TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 DocID024653 Rev 1 15/22 Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S 16/22 DocID024653 Rev 1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Table 12. Package mechanical data TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024653 Rev 1 5.70 17/22 Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Figure 27. TO-247 drawing 0075325_G 18/22 DocID024653 Rev 1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND 5 Packaging mechanical data Packaging mechanical data Table 13. DPAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID024653 Rev 1 Min. Max. 330 13.2 26.4 30.4 19/22 Packaging mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Figure 28. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F B1 W K0 B0 For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v1 Figure 29. Reel T REEL DIMENSIONS 40mm min. Access hole At slot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 20/22 DocID024653 Rev 1 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND 6 Revision history Revision history Table 14. Document revision history Date Revision 15-May-2013 1 Changes First release DocID024653 Rev 1 21/22 STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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