This is information on a product in full production.
May 2013 DocID024653 Rev 1 1/22
22
STB1 8NM60ND, STF18NM60ND,
STP18NM60ND, STW18NM60ND
N-channel 600 V - 0.25 Ω typ., 13 A FDmesh™ II Power MOSFET
(with fast diode) in D2PAK, TO- 220FP, T O-220 and TO-247 p ackages
Datasheet
−
production data
Figure 1. Internal schematic diagram
Features
•The worldwide best R
DS(on)
* ar ea among st the
fast recovery diode devices
•100% avalanche tested
•Low input capacitance and gate charge
•Low gate input resistance
•Extremely high dv/dt and avalanche
capabilities
Applications
•Switching applications
Description
These FDmesh™ II Power MOSFETs with
intrinsic fast-recovery body diode are produced
using the second generation of MDmesh™
technology. Utilizing a new strip-layout vertical
structure, these revolutionary d evices feature
extremely low on-resistance and superior
switching performance. They are ideal for bridge
topolo gie s and ZVS phase -shi ft converte rs.
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*
6
TO-220
TO-220FP
TO-247
D
2
PAK
1
3
TAB
123
123
TAB
123
Order codes V
DSS
@
T
Jmax
R
DS(on)
max I
D
STB18NM60ND
650 V <0.29 Ω13 A
STF18NM60ND
STP18NM60ND
STW18NM60ND
Table 1. Device summary
Order codes Marking Package Packaging
STB18NM60ND
18NM60 ND
D
2
PAK Tape and reel
STF18NM60ND TO-220FP
TubeSTP18NM60ND TO-220
STW18NM60ND TO-247
www.st.com
Contents STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
2/22 DocID024653 Rev 1
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
DocID024653 Rev 1 3/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
D
2
PAK, TO-
220, T O-247 TO-220FP
V
DS
Drain-s ourc e vol t ag e 600 V
V
GS
Gate-source voltage ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 13 13
(1)
1. Limited by maximum junction temperature
A
I
D
Drain current (continuous) at T
C
= 100 °C 8.19 8.19
(1)
A
I
DM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 52 52
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 130 30 W
dv/dt
(3)
3. I
SD
≤ 13 A, di/dt ≤ 400 A/µs , V
DD
= 80% V
(BR)DSS,
V
DS(peak)
≤ V
(BR)DSS
Peak diode r eco ve ry vol tage slo pe 40 V/ns
dv/dt (4)
4. V
DS
≤ 480 V
MOSFET dv/dt ruggedness 40 V/ns
V
ISO
Insulation withstand voltage (RMS) from all three
leads to external heat sink
(t=1 s;T
C
=25 °C) -- 2500 V
T
stg
Storage temperature -55 to 150 °C
T
j
Operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter D²PAK TO-220FP TO-220 TO-247 Unit
R
thj-case
Thermal resistance junction-case max 0.96 4.17 0.96 0.96 °C/W
R
thj-amb
Thermal resistance junction-amb max 62.5 50 °C/W
R
thj-pcb
Thermal resistance junction-pcb max 30 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
I
AS
Avalanche current, repetitive or not-repetitive (pulse
width limited by T
j max
)3.5 A
E
AS
Single pulse avalanche energy
(starting Tj = 25 °C, I
D
= I
AS
, V
DD
= 50 V) 187 mJ
Electrical characteristics STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
4/22 DocID024653 Rev 1
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage I
D
= 1 mA, V
GS
= 0 600 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0) V
DS
= 600 V,
V
DS
= 600 V, T
C
=125 °C 1
100 µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0) V
GS
= ±20 V ±100 nA
V
GS(th)
Gate thresh old voltage V
DS
= V
GS
, I
D
= 250 µA 345V
R
DS(on)
Static drain-source on
resistance V
GS
= 10 V, I
D
= 6.5 A 0.25 0.29 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance V
DS
= 50 V, f =1 MHz,
V
GS
= 0
- 1030 - pF
C
oss
Output capacitance - 30 - pF
C
rss
Reverse transfer
capacitance -3.2-pF
C
oss eq.(1)
1. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance VGS = 0, VDS = 0V to 48 0 V -148- pF
Rg Gate input resistance f=1 MHz Gate DC Bias=0
Test signal lev el=20 mV
open drain -3.6- Ω
QgTotal gate charg e VDD = 480 V, ID = 13 A
VGS = 10 V
(see Figure 18)
-34-nC
Qgs Gate-s ource cha r ge - 5.5 - n C
Qgd Gate-drain charge - 20 - nC
DocID024653 Rev 1 5/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Electrical characteristics
Table 7. Switching times
Symbol Parameter Test conditions Min Typ Max Unit
t
d(on)
Turn-on delay time V
DD
= 300 V, I
D
= 6.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 17)
-55-ns
t
r
Rise time - 15.5 - ns
t
d(off)
Turn-o f f del ay time - 13 - ns
t
f
Fall time - 18 - ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min Typ Max Unit
I
SD
Source-drain current - 13 A
I
SDM (1)
1. Pulse width limited by safe operating area
Source-drain current (pulsed) - 52 A
V
SD(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 13 A, V
GS
=0 - 1.6 V
t
rr
Reverse recovery time I
SD
=13 A, di/dt =100 A/µs,
V
DD
= 100 V
(see Figure 19)
-136 ns
Q
rr
Reverse recovery charge - 843 nC
I
RRM
Reverse recovery current - 12.5 A
t
rr
Reverse recovery time V
DD
= 100 V
di/dt =100 A/µs, I
SD
= 13 A
T
j
= 150 °C (see Figure 19)
-198 ns
Q
rr
Reverse recovery charge - 1425 nC
I
RRM
Reverse recovery current - 14.5 A
Electrical characteristics STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
6/22 DocID024653 Rev 1
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for D
2
PAK and
TO-220 Figure 3. Thermal impedance for D
2
PAK and
TO-220
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15785v1
Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP
I
D
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
10
AM15786v1
Figure 6. Safe operating area for T O-247 Figure 7. Thermal impedan ce for TO-247
I
D
10
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Single
pulse
AM15787v1
DocID024653 Rev 1 7/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Electrical characteristics
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
Figure 12. Capacitance variations Figure 13. Normalized gate threshold voltage
vs. temperature
I
D
6
4
2
0
010 V
DS
(V)
(A)
515
8
4V
5V
6V
V
GS
=7, 8, 9, 10V
20
10
12
14
16
18
20
22
24
26
28
AM15788v1
I
D
4
0
04V
GS
(V)
8
(A)
26
8
12
V
DS
=18V
14
16
10
2
6
10
18
20
22
24
26
28
30
AM15789v1
V
GS
6
4
2
0
0Q
g
(nC)
(V)
8
8
10
V
DD
=480V
300
200
100
0
400
V
DS
16
500
V
DS
(V)
I
D
=13A
24 32
AM15791v1
R
DS(on)
0.255
0.250
0.245
0.240
04I
D
(A)
(Ω)
26
0.260
810
V
GS
=10V
0.265
12
AM15790v1
C
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
1000
AM15792v1
V
GS(th)
0.85
0.80
0.75
0.70
T
J
(°C)
(norm)
-50
0.90
-25 50 100
0.95
025 75 125
1.00
1.05
1.10
ID=250 µA
AM15793v1
Electrical characteristics STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
8/22 DocID024653 Rev 1
Figure 14. Normalized on-resistance vs
temperature Figure 15. Source-drain diode forw ard
characteristics
R
DS(on)
1.3
1.1
0.9
0.7
T
J
(°C)
(norm)
0.5
-50 -25 025
I
D
=13 A
50 75 100 125
1.5
1.7
1.9
2.1
AM15794v1
V
SD
04I
SD
(A)
(V)
210
68
0.4
0.6
0.8
1
T
J
=-50°C
T
J
=150°C
T
J
=25°C
1.2
12
AM15795v1
Figure 16. Normali zed V
DS
vs temperature
V
DS
0.98
0.96
0.94
0.92
T
J
(°C)
(norm)
-50
1
I
D
=1mA
-25 50 100
1.02
025 75 125
1.04
1.06
1.08
AM15796v1
DocID024653 Rev 1 9/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Test circuit
3 Test circuit
Figure 17. Switching times test circuit for
resistive load Figure 18. Gate charge test circuit
Figure 19. Test circuit for inductive load
switching and diode recovery times Figure 20. Unclamped Inductive load tes t circuit
Figure 21. Unclamped inductive waveform Figure 22. Switching time waveform
Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
10/22 DocID024653 Rev 1
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID024653 Rev 1 11/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Package mechanical data
Table 9. D²PAK (TO-263) mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
A1 0.03 0.23
b0.70 0.93
b2 1.14 1.70
c0.45 0.60
c2 1.23 1.36
D8.95 9.35
D1 7.50
E 10 10.40
E1 8.50
e2.54
e1 4.88 5.28
H 15 15.85
J1 2.49 2.69
L2.29 2.79
L1 1.27 1.40
L2 1.30 1.75
R0.4
V2 0° 8°
Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
12/22 DocID024653 Rev 1
Figure 23. D²PAK (TO-263) drawing
Figure 24. D²PAK footprint
(a)
a. All dimension are in millimeters
0079457_T
16.90
12.20
9.75
3.50
5.08
1.60
Footprint
DocID024653 Rev 1 13/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Package mechanical data
Table 10. TO-220FP mechanical data
Dim. mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
14/22 DocID024653 Rev 1
Figure 25. TO-220FP drawing
7012510_Rev_K_B
DocID024653 Rev 1 15/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Package mechanical data
Table 11. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
16/22 DocID024653 Rev 1
Figure 26. TO-220 type A drawing
0015988_typeA_Rev_S
DocID024653 Rev 1 17/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Package mechanical data
Table 12. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
Package mechanical data STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND
18/22 DocID024653 Rev 1
Figure 27. TO-247 drawing
0075325_G
DocID024653 Rev 1 19/22
STB18NM60ND, STF18NM60ND, STP18NM60ND, STW18NM60ND Packaging mechanical data
5 Packaging mechanical data
Table 13. D²PAK (TO-263) tape and reel mechanical data
Tape Reel
Dim. mm Dim. mm
Min. Max. Min. Max.
A0 10.5 10.7 A 330
B0 15.7 15.9 B 1.5
D 1.5 1.6 C 12.8 13.2
D1 1.59 1.61 D 20.2
E 1.65 1.85 G 24.4 26.4
F 11.4 11.6 N 100
K0 4.8 5.0 T 30.4
P0 3.9 4.1
P1 11.9 12.1 Base qty 1000
P2 1.9 2.1 Bulk qty 1000
R50
T 0.25 0.35
W 23.7 24.3