© 2017 IXYS CORPORATION, All Rights Reserved DS100201B(8/17)
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTY02N120P
IXTP02N120P
VDSS = 1200V
ID25 = 0.2A
RDS(on)
75
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.
BVDSS VGS = 0V, ID = 250μA 1200 V
VGS(th) VDS = VGS, ID = 100μA 2.0 4.0 V
IGSS VGS = 20V, VDS = 0V 50 nA
IDSS VDS = VDSS, VGS = 0V 1 A
TJ = 125C 25 A
RDS(on) VGS = 10V, ID = 0.5 • ID25, Note 1 75
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25C to 150C 1200 V
VDGR TJ= 25C to 150C, RGS = 1M1200 V
VGSS Continuous 20 V
VGSM Transient 30 V
ID25 TC= 25C 0.2 A
IDM TC= 25C, Pulse Width Limited by TJM 0.6 A
IATC= 25C 0.2 A
EAS TC= 25C40mJ
dv/dt IS IDM, VDD VDSS, TJ 150°C 10 V/ns
PDTC= 25C33W
TJ-55 ... +150 C
TJM 150 C
Tstg -55 ... +150 C
TLMaximum Lead Temperature for Soldering 300 °C
TSOLD 1.6 mm (0.062in.) from Case for 10s 260 °C
MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in
Weight TO-252 0.35 g
TO-220 3.00 g
G = Gate D = Drain
S = Source Tab = Drain
GDS
TO-220 (IXTP)
D (Tab)
TO-252 (IXTY)
G
S
D (Tab)
Features
International Standard Packages
Low QG
Avalanche Rated
Low Package Inductance
Fast Intrinsic Rectifier
Advantages
High Power Density
Easy to Mount
Space Savings
Applications
DC-DC Converters
Switch-Mode and Resonant-Mode
Power Supplies
AC and DC Motor Drives
Laser Drivers
Igniters, RF Generators
Robotics and Servo Controls
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY02N120P
IXTP02N120P
Note 1. Pulse test, t 300s, duty cycle, d 2%.
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065B1 6,683,344 6,727,585 7,005,734B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123B1 6,534,343 6,710,405B2 6,759,692 7,063,975B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728B1 6,583,505 6,710,463 6,771,478B2 7,071,537
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
ISVGS = 0V 0.2 A
ISM Repetitive, Pulse Width Limited by TJM 0.8 A
VSD IF = IS, VGS = 0V, Note 1 1.3 V
trr 1.6 μs
IRM 3.5 A
QRM 2.8 μC
IF = 0.2A, -di/dt = 100A/μs,
VR = 100V
TO-252 AA Outline
1 - Gate
2,4 - Drain
3 - Source
L1
b2
e1
L4
E A
c2
H
A1
A2
L2
L
A
e c
0
e1 e1 e1 e1 e1
OPTIONAL 5.55MIN
1.25MIN
6.50MIN
2.28
6.40
BOTTOM
VIEW
2.85MIN
LAND PATTERN RECOMMENDATION
4
1 2 3
4
L3
b3
TO-220 Outline
1 - Gate
2,4 - Drain
3 - Source
E1
E A
D1
D
Q
L1
oP
H1
A1
L
A2
D2
e c
e1
e1 3X b2
e 3X b
EJECTOR
PIN
Symbol Test Conditions Characteristic Values
(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max
gfs VDS = 10V, ID = 0.5 • ID25, Note 1 0.12 0.20 S
Ciss 104 pF
Coss VGS = 0V, VDS = 25V, f = 1MHz 8.6 pF
Crss 1.9 pF
td(on) 6 ns
tr 10 ns
td(off) 21 ns
tf 39 ns
Qg(on) 4.70 nC
Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 0.37 nC
Qgd 3.20 nC
RthJC 3.8 C/W
RthCS TO-220 0.50 C/W
Resistive Switching Times
VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
RG = 50 (External)
© 2017 IXYS CORPORATION, All Rights Reserved
IXTY02N120P
IXTP02N120P
Fig. 1. Output Characteristics @ T
J
= 25
o
C
0
20
40
60
80
100
120
140
160
180
200
02468101214
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
7V
6V
5V
4V
3V
Fig. 2. Extended Output Characteristics @ T
J
= 25
o
C
0
100
200
300
400
500
600
700
800
900
1000
0 50 100 150 200 250 300 350
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
8V
7V
5V
4V
6V
Fig. 3. Output Characteristics @ T
J
= 125
o
C
0
20
40
60
80
100
120
140
160
180
200
0 5 10 15 20 25 30
V
DS
- Volts
I
D
- MilliAmperes
V
GS
= 10V
7V
5V
4V
6V
Fig. 4. R
DS(on)
Normalized to I
D
= 100mA Value vs.
Junction Temperature
0.2
0.6
1.0
1.4
1.8
2.2
2.6
3.0
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 200mA
I
D
= 100mA
Fig. 5. R
DS(on)
Normalized to I
D
= 100mA Value vs.
Drain Current
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0 100 200 300 400 500 600 700 800 900 1000
I
D
- MilliAmperes
R
DS(on)
- Normalized
V
GS
= 10V
T
J
= 125oC
T
J
= 25oC
Fig. 6. Maximum Drain Current vs. Case Temperature
0
40
80
120
160
200
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- MilliAmperes
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXTY02N120P
IXTP02N120P
IXYS REF: T_02N120P(F2) 10-01-09
Fig. 7. Input Admittance
0
50
100
150
200
250
300
350
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
V
GS
- Volts
I
D
- MilliAmperes
T
J
= 125
o
C
25
o
C
- 40
o
C
Fig. 8. Transconductance
0
50
100
150
200
250
300
350
400
0 50 100 150 200 250 300 350
I
D
- MilliAmperes
g
f s
- MilliSiemens
T
J
= - 40
o
C
125
o
C
25
o
C
Fig. 9. Forward Voltage Drop of Intrinsic Diode
0
100
200
300
400
500
600
700
800
0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- MilliAmperes
T
J
= 125
o
C
T
J
= 25
o
C
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0.00.51.01.52.02.53.03.54.04.55.0
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 600V
I
D
= 100mA
I
G
= 1mA
Fig. 11. Capacitance
1
10
100
1,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Maximum Transient Thermal Impedance
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- K / W
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