MBRT40045 thru MBRT400100R Silicon Power Schottky Diode VRRM = 20 V - 100 V IF = 400 A Features * High Surge Capability * Types up to 100 V VRRM Three Tower Package * Isolation Type Package Maximum ratings, at Tj = 25 C, unless otherwise specified ("R" devices have leads reversed) Conditions MBRT40045 (R) MBRT40060 (R) MBRT40080 (R) MBRT400100 (R) Unit Parameter Symbol Repetitive p p peak reverse voltage g VRRM 45 60 80 100 V RMS reverse voltage VRMS 32 42 57 70 V DC blocking voltage VDC 100 V 45 60 80 Continuous forward current IF TC 100 C 400 400 400 400 A Surge non-repetitive forward current, Half Sine Wave IF,SM TC = 25 C, tp = 8.3 ms 3000 3000 3000 3000 A Operating temperature Storage temperature Tj Tstg -40 to 150 -40 to 175 -40 to 150 -40 to 175 -40 to 150 -40 to 175 -40 to 150 -40 to 175 C C Electrical characteristics, at Tj = 25 C, unless otherwise specified Symbol Conditions Diode forward voltage VF Reverse current IR IF = 200 A, Tj = 25 C VR = 20 V, Tj = 25 C VR = 20 V, Tj = 125 C Parameter MBRT40045 (R) MBRT40060(R) MBRT40080 (R) MBRT400100 (R) Unit 0.75 1 20 0.8 1 20 0.88 1 20 0.88 1 20 0.14 0.14 0.14 0.14 V mA Thermal characteristics Thermal resistance, junction case www.genesicsemi.com RthJC 1 C/W MBRT40045 thru MBRT400100R www.genesicsemi.com 2