T
T1
P1
FP
HiRel
Silicon PIN Diode BXY 43
Semiconductor Group 1 Draft A03 1998-04-01
Features
¥
HiRel
Discrete and Microwave Semiconductor
¥ Current controlled RF resistor for RF attenuators and
switches
¥ High reverse voltage
¥ Hermetically sealed microwave package
¥ qualified
¥ ESA/SCC Detail Spec. No.: 5513/030
ESD: E
lectro
s
tatic
d
ischarge sensitive device, observe
handling precautions!
Type Marking Ordering
Code
Pin
Configuration
Pack.
BXY 43-T (ql)
-
see below T
BXY 43-T1 (ql)
-
see below T1
BXY 43-P1 (ql)
-
see below P1
BXY 43-FP (ql)
-
see below FP
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702X151
H: High Rel Quality, Ordering Code: on request
S: Space Quality, Ordering Code: on request
ES: ESA Space Quality, Ordering Code: Q62702X169
(see
Chapter Order Instructions
for ordering example)
BXY 43
Semiconductor Group 2 Draft A03 1998-04-01
Table 1 Maximum Ratings
Parameter Symbol Limit Values Unit
Reverse voltage
V
R
150 V
Forward current
I
F
400 mA
Power dissipation
P
tot
500 mW
Operating temperature range
T
op
-
55 to + 150
°
C
Storage temperature range
T
stg
-
65 to + 175
°
C
Soldering temperature
T
sol
+ 235
°
C
Junction temperature
T
j
175
°
C
Thermal resistance junction-case
BXY 43-T
BXY 43-T1
BXY 43-P1
BXY 43-FP
R
th(j-c)
100
125
90
100
K/W
BXY 43
Semiconductor Group 3 Draft A03 1998-04-01
Electrical Characteristics
Table 2 DC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Parameter Symbol Limit Values Unit
min. typ. max.
Reverse current 1
V
R1
= 150 V
I
R1
--
100 nA
Reverse current 2
V
R2
= 100 V
I
R2
--
10 nA
Forward voltage
I
F
= 100 mA
V
F
-
0.97 1 V
Table 3 AC Characteristics
at
T
A
= 25
°
C unless otherwise specified
Parameter Symbol Limit Values Unit
min. typ. max.
Total capacitance
V
R
= 50 V,
f
= 1 MHz
BXY 43-T, -T1
BXY 43-P1
BXY 43-FP
C
T
-
0.3
0.4
0.30
0.50
0.60
0.45
0.75
0.85
pF
Forward resistance
f
= 100 MHz,
I
F1
= 20
m
A
R
F1
-
55 70
W
Forward resistance
f
= 100 MHz,
I
F2
= 1 mA
R
F2
-
2.2 3.0
W
Forward resistance
f
= 100 MHz,
I
F3
= 10 mA
R
F3
-
0.9 1.5
W
Minority carrier lifetime
I
F
= 10 mA,
I
R
= 6 mA,
I
R
= 3 mA
t
L
250 650
-
ns
BXY 43
Semiconductor Group 4 Draft A03 1998-04-01
Order Instructions
Full type variant including package variant and quality level must be specified by the
orderer. For
HiRel Discrete and Microwave Semiconductors the ordering code specifies
device family and quality level only.
Ordering Form:
Ordering Code: QÉ
BXY43- (x) (ql)
(x): Package Variant
(ql): Quality Level
Ordering Example:
Ordering Code: Q62702X169
BXY43-FP ES
For BXY43 in Flatpack Package; ESA Space Quality Level
Further Information
See our WWW-Pages:
Ð Discrete and RF-Semiconductors (Small Signal Semiconductors)
www.siemens.de/semiconductor/products/35/35.htm
ÐHiRel Discrete and Microwave Semiconductors
www.siemens.de/semiconductor/products/35/353.htm
Please contact also our marketing division:
Tel.: ++89 6362 4480
Fax.: ++89 6362 5568
e-mail: martin.wimmers@hl.siemens.de
BXY 43
Semiconductor Group 5 Draft A03 1998-04-01
Figure 1 T Package
Symbol Millimetre
min. max.
A 1.30 1.45
B 1.15 1.35
C-0.40
BXY 43
Semiconductor Group 6 Draft A03 1998-04-01
Figure 2 T1 Package
Symbol Millimetre
min. max.
A 1.30 1.45
B 1.15 1.35
C-0.40
D 0.10 0.50
E-0.30
F 0.06 0.10
G 5.50 -
H 0.40 0.60
BXY 43
Semiconductor Group 7 Draft A03 1998-04-01
Figure 3 P1 Package
Symbol Millimetre
min. max.
ÆA 2.0 2.2
ÆB 3.0 3.2
C 1.45 1.7
D 0.4 0.6
BXY 43
Semiconductor Group 8 Draft A03 1998-04-01
Figure 4 FP Package
Symbol Millimetre
min. max.
B 3.10 3.55
B1 3.00 3.30
D 1.30 1.70
D1 0.55 0.65
d 0.10 0.15
d1 0.25 0.40
F 2.40 2.60
L 5.50 -