MBRS190TR, MBRS1100TR
Bulletin PD-20592 rev. E 07/04
2www.irf.com
Voltage Ratings
VFM Max. Forward Voltage Drop (1) 0.78 V @ 1A TJ = 25 °C
* See Fig. 1 0.62 V @ 1A TJ = 125 °C
IRM Max. Reverse Leakage Current (1) 0.5 mA TJ = 25 °C
* See Fig. 2 1.0 mA TJ = 125 °C
CTTypical Junction Capacitance 42 pF VR = 5VDC, (test signal range 100kHz to 1MHz) 25°C
LSTypical Series Inductance 2.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Volatge Rate of Charge 10000 V/ µs
(Rated VR)
VR = rated VR
Electrical Specifications
Parameters Value Units Conditions
(1) Pulse Width < 300µs, Duty Cycle < 2%
IF(AV) Max. Average Forward Current 1.0 A 50% duty cycle @ TL = 147 °C, rectangular wave form
IFSM Max. Peak One Cycle Non-Repetitive 870 A 5µs Sine or 3µs Rect. pulse
Surge Current 50 10ms Sine or 6ms Rect. pulse
EAS Non- Repetitive Avalanche Energy 1.0 mJ TJ = 25 °C, IAS = 0.5A, L = 8mH
IAR Repetitive Avalanche Current 0.5 A Current decaying linearly to zero in 1 µsec
Frequency limited by TJ max. Va = 1.5 x Vr typical
Parameters Value Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated VRRM applied
VRMax. DC Reverse Voltage (V) 90 100
VRWM Max. Working Peak Reverse Voltage (V)
Part number MBRS190TR MBRS1100TR
TJMax. Junction Temperature Range (*) - 55 to 175 °C
Tstg Max. Storage Temperature Range - 55 to 175 °C
RthJL Max. Thermal Resistance 36 °C/W DC operation (See Fig. 4)
Junction to Lead (**)
RthJA Max. Thermal Resistance 80 °C/W DC operation
Junction to Ambient
wt Approximate Weight 0.10 (0.003) g (oz.)
Case Style SMB Similar to DO-214AA
Device Marking IR19-IR10
Thermal-Mechanical Specifications
Parameters Value Units Conditions
(**) Mounted 1 inch square PCB
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)