VRRM = 13.5 kV
VDRM = 13.5 kV
IPULSE =60kA
VDcmax =12kV
Features
•
Multichip Design wi th 4 Wafers in Series
•
For Single Pulse Applications
•
Voltage Sharing possibility
•
Free Floating Silicon Technology
•
Glazed Ceramic Presspack Housing
•
Compact Design
•
High Reliability
VDRM Repetitive for ward blocking 13.5 kV
VRRM Repetitive reverse block ing 13.5 kV
VDC Permanent DC voltage for 100
FIT failure rate 9kV
Tvj = 0 … 125°C
At Tj ≤ 50 °C. Ambient cosmic r adiat ion
at sea level in open air.
VDC Max. DC volt age 12 kV For ≤ 60 sec at Tj ≤ 50°C
IPULSE Max. Pulse Current 60 kA Half sine wave, Tj ≤ 50°C, tp ≤ 500 µs
di/dt Max. curr ent rate of r ise 500 A/µsIG = 2 mA / diG/dt = 1,5 A/µs
I2t Limiting load integr al 0.9 x106A2sTp = 500 µs, Tj = 50 °C
VTForward voltage drop 2.16 V Per Wafer level IF = 3000 A, Tj = 50 °C
VT0 Threshold voltag e 1.02 V Per Wafer level at Tj = 50 °C
rTSlope resistance 0.38 mΩPer W afer level at Tj = 50 °C
tdTurn- on delay time ≤ 2.0 µsVD = 0.4 Vdrm, IG = 2.0 A
A special HV Gate Drive Unit, incl uding sharing resistors is available. See Datasheet P/N 5SPY 94-04 (RAM 94-04)
ABB Switzerland Ltd reserves the right to change specificati ons without notice
High Voltage High Current
Thyristor Switch for
Pulsed Power Applications
5STF 07Z1350
Pulse Power Device 5STF 07Z1350
Mechanical data min. 17 kN
max. 24 kN
DpPole-piece diameter 47 mm
H Housing thickness 51 mm
MWeight 1,0kg
DSSurface cr eepage distance 42 mm
DaAir strik e dist ance 29 mm
122
ABB Switzerland Lt d, Semi conductors
Pulse Power
Fabri kstra sse 3
CH-5600 Lenzburg, Switzerland
Tel.: +41-58-586-1742
Fax: +41-58-586-1310
E-Mail: pulsepower.abbsem@ch.abb.com
Internet: www.abb.com/semiconductors
