MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 36
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC260
GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
v04.1007
General Description
Features
Functional Diagram
Passive: No DC Bias Required
Input IP3: +20 dBm
LO/RF Isolation: 39 dB
Small Size: 1.0 x 0.55 x 0.1 mm
Electrical Speci cations, TA = +25° C
Typical Applications
The HMC260 is ideal for:
• Point-to-Point Radios
• Point-to-Multi-Point Radios
*Unless otherwise noted, all measurements performed as downconverter, IF= 1 GHz.
The HMC260 is a passive double balanced mixer
that can be used as an upconverter or downconverter
between 14 and 26 GHz. The miniature monolithic
mixer (MMIC) requires no external components or
matching circuitry. The HMC260 provides excellent
LO to RF and LO to IF suppression due to optimized
balun structures. The mixer operates with LO drive
levels above +9 dBm. Measurements were made with
the chip mounted and bonded into in a 50 ohm test
xture. Data includes the parasitic effects of wire bond
assembly. Connections were made with a 3 mil rib-
bon bond with minimal length (<12 mil).
Parameter LO = +13 dBm, IF = 1 GHz Units
Min. Typ. Max.
Frequency Range, RF & LO 14 - 26 GHz
Frequency Range, IF DC - 8 GHz
Conversion Loss 7.5 10.5 dB
Noise Figure (SSB) 7.5 10.5 dB
LO to RF Isolation 30 39 dB
LO to IF Isolation 25 35 dB
RF to IF Isolation 18 25 dB
IP3 (Input) 13 20 dBm
IP2 (Input) 45 55 dBm
1 dB Gain Compression (Input) 6 11 dBm
MIXERS - DOUBLE-BALANCED - CHIP
4
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Conversion Gain vs.
Temperature @ LO = +13 dBm
Conversion Gain vs. LO Drive
Isolation @ LO = +13 dBm
IF Bandwidth @ LO = +13 dBm
Return Loss @ LO = +13 dBm
Upconverter Performance
Conversion Gain @ LO = +13 dBm
-15
-12
-9
-6
-3
0
12 14 16 18 20 22 24 26
+ 25 C
+ 85 C
- 55 C
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
12 14 16 18 20 22 24 26
LO
RF
RETURNLOSS (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
12 14 16 18 20 22 24 26
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-20
-16
-12
-8
-4
0
024681012
IF Return Loss
Conversion Gain
RESPONSE (dB)
FREQUENCY (GHz)
-15
-12
-9
-6
-3
0
12 14 16 18 20 22 24 26
+9 dBm
+11 dBm
+13 dBm
+15 dBm
CONVERSION GAIN (dB)
FREQUENCY (GHz)
-60
-50
-40
-30
-20
-10
0
12 14 16 18 20 22 24 26
RF/IF
LO/RF
LO/IF
ISOLATION (dB)
FREQUENCY (GHz)
HMC260
v04.1007 GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 38
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
MxN Spurious Outputs
Input IP2 vs.
Temperature @ LO = +13 dBm *
Input IP3 vs. LO Drive *
Input IP3 vs.
Temperature @ LO = +13 dBm *
Input IP2 vs. LO Drive *
* Two-tone input power = -5 dBm each tone, 1 MHz spacing.
Input P1dB vs.
Temperature @ LO = +13 dBm
nLO
mRF01234
0 xx 9 19 xx xx
12004637xx
26472688295
3xx92998394
4 xx xx 102 >110 >110
RF = 21 GHz @ -10 dBm
LO = 22 GHz @ +13 dBm
All values in dBc below the IF output power level.
40
50
60
70
80
90
100
14 16 18 20 22 24 26
+ 25 C
+ 85 C
- 55 C
IP2 (dBm)
LO FREQUENCY (GHz)
6
8
10
12
14
16
14 15 16 17 18 19 20 21 22 23 24 25 26
+ 25 C
+ 85 C
- 55 C
P1dB (dBm)
FREQUENCY (GHz)
40
50
60
70
80
90
100
14 16 18 20 22 24 26
+11 dBm
+13 dBm
+15 dBm
IP2 (dBm)
LO FREQUENCY (GHz)
0
5
10
15
20
25
14 16 18 20 22 24 26
+ 25 C
+ 85 C
- 55 C
IP3 (dBm)
LO FREQUENCY (GHz)
0
5
10
15
20
25
14 16 18 20 22 24 26
+11 dBm
+13 dBm
+15 dBm
IP3 (dBm)
LO FREQUENCY (GHz)
HMC260
v04.1007 GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 39
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
Absolute Maximum Ratings
RF / IF Input +15 dBm
LO Drive +27 dBm
Storage Temperature -65 to +150 °C
Operating Temperature -55 to +85 °C
IF DC Current ±4 mA
ESD Sensitivity (HBM) Class 1A
NOTES:
1. ALL DIMENSIONS ARE IN INCHES [MM].
2. DIE THICKNESS IS .004”.
3. TYPICAL BOND PAD IS .004” SQUARE.
4. BOND PAD SPACING CENTER TO CENTER IS .006”.
5. BACKSIDE METALLIZATION: GOLD.
6. BOND PAD METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS.
Die Packaging Information [1]
Standard Alternate
GP-5 (Gel Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC260
v04.1007 GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 40
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1LO This pin is DC coupled
and matched to 50 Ohms.
2RF This pin is DC coupled
and matched to 50 Ohms.
3IF
This pin is DC coupled. For applications not requiring
operation to DC this port should be DC blocked externally
using a series capacitor. Choose value of capacitor to pass
IF frequency desired. For operation to DC, this pin must
not sink/source more than 40 mA of current or failure may
result.
Die Bottom GND This pin must be connected to RF ground.
Pad Descriptions
HMC260
v04.1007 GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz
MIXERS - DOUBLE-BALANCED - CHIP
4
4 - 41
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Mounting & Bonding Techniques for Millimeterwave GaAs MMICs
The die should be attached directly to the ground plane eutectically or with
conductive epoxy (see HMC general Handling, Mounting, Bonding Note).
50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin  lm
substrates are recommended for bringing RF to and from the chip (Figure 1). If
0.254mm (10 mil) thick alumina thin  lm substrates must be used, the die should
be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface
of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick
die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then
attached to the ground plane (Figure 2).
Microstrip substrates should be brought as close to the die as possible in order to
minimize ribbon bond length. Typical die-to-substrate spacing is 0.076mm (3 mils).
Gold ribbon of 0.075 mm (3 mil) width and minimal length <0.31 mm (<12 mils) is
recommended to minimize inductance on RF, LO & IF ports.
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective
containers, and then sealed in an ESD protective bag for shipment. Once the
sealed ESD protective bag has been opened, all die should be stored in a dry
nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean
the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied.
Use shielded signal and bias cables to minimize inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with
a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and
should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting
surface should be clean and  at.
Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature
of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip
to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for
attachment.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
RF bonds made with 0.003” x 0.0005” ribbon are recommended. These bonds should be thermosonically bonded with a force of
40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made
with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150
°C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible,
less than 12 mils (0.31 mm).
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.127mm (0.005”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 1.
0.102mm (0.004”) Thick GaAs MMIC
Wire Bond
RF Ground Plane
0.254mm (0.010”) Thick Alumina
Thin Film Substrate
0.076mm
(0.003”)
Figure 2.
0.150mm (0.005”) Thick
Moly Tab
HMC260
v04.1007 GaAs MMIC FUNDAMENTAL
MIXER, 14 - 26 GHz