© 2000 IXYS All rights reserved 1 - 4
VMK 90-02T2 VDSS = 200 V
ID25 = 83 A
RDS(on) = 25 mW
Data per MOSFET unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 200 V
VGS(th) VDS = VGS, ID = 3 mA 2 4 V
IGSS VGS = ±20 V DC, VDS = 0 500 nA
IDSS VDS = 0.8 • VDSS,V
GS = 0 V, TJ = 25°C 400 mA
VGS = 0 V, TJ = 125°C2mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 25 mW
Pulse test, t £ 300 ms, duty cycle d £ 2 %
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 200 V
VDGR TJ= 25°C to 150°C; RGS = 6.8 kW200 V
VGS Continuous ±20 V
VGSM Transient ±30 V
ID25 TC= 25°C83A
ID80 TC= 80°C62A
IDM TC= 25°C, tp = 10 ms, pulse width limited by TJM 330 A
PDTC= 25°C, TJ = 150°C, 380 W
TJ-40 ... +150 °C
TJM 150 °C
Tstg -40 ... +125 °C
VISOL 50/60 Hz t = 1 min 2500 V~
IISOL £ 1 mA t = 1 s 3000 V~
MdMounting torque(M5 or 10-32 UNF) 2.5-4.0/22-35 Nm/lb.in.
Terminal connection torque (M5) 2.5-4.0/22-35 Nm/lb.in.
Weight Typical including screws 90 g
Common-Source connected
N-Channel Enhancement Mode 4213657
Features
●Two MOSFET with common source
●International standard package
JEDEC TO-240 AA
●Direct copper bonded Al2O3 ceramic
base plate
●Isolation voltage 3000 V~
●Low RDS(on) HDMOSTM process
●Low package inductance for high
speed switching
●Kelvin source contact
●Keyed twin plugs
Applications
●Push-pull inverters
●Switched-mode and resonant-mode
power supplies
●Uninterruptible power supplies (UPS)
●AC static switches
Advantages
●Easy to mount with two screws
●Space and weight savings
●High power density
●Low losses
750
Dual Power
MOSFET Module
2
136745
TO-240 AA
1, 3 = Drain, 2 = Common Source
5, 6 = Gate, 4, 7 = Kelvin Source
E 72873
© 2000 IXYS All rights reserved 2 - 4
VMK 90-02T2
TO-240 AA Outline
Dimensions in mm (1 mm = 0.0394")
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 10 V; ID = 0.5 • ID25 pulsed 60 S
Ciss 9000 15000 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 1600 4500 pF
Crss 600 1500 pF
td(on) 70 ns
trVGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 ns
td(off) RG = 1 W (External), resistive load 200 ns
tf100 ns
Qg380 450 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 70 110 nC
Qgd 190 230 nC
RthJC 0.33 K/W
RthJK with heat transfer paste 0.53 K/W
dSCreepage distance on surface 12.7 mm
dAStrike distance through air 9.6 mm
aMax. allowable acceleration 50 m/s2
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 83 A
ISM Repetitive; pulse width limited by TJM 330 A
VSD IF = IS; VGS = 0 V, 1.0 1.2 V
Pulse test, t £ 300 ms, duty cycle d £ 2 %
trr IF = IS, -di/dt = 100 A/ms, VDS = 100 V, VGS = 0 V 400 750 ns
IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
© 2000 IXYS All rights reserved 3 - 4
VMK 90-02T2
0123456
0
25
50
75
100
125
150
175
200
5 V
VDS
ID
V
A
ID
8 V
6 V
7 V
9 V
012345678
0
25
50
75
100
125
150
175
200
V
VGS
TJ = 125
°
C
TJ = 25°C
0 25 50 75 100 125 150
0
20
40
60
80
100
°C
TC
ID
A
-50 -25 0 25 50 75 100 125 150
0.7
0.8
0.9
1.0
1.1
1.2
VDSS
°C
VGS(th)
-50 -25 0 25 50 75 100 125 150
0.50
0.75
1.00
1.25
1.50
1.75
2.00
2.25
2.50 ID = 45 A
norm.
°C
0 25 50 75 100 125 150
0.8
0.9
1.0
1.1
1.2
1.3
1.4 RDS(on)
norm.
RDS(on)
TJ
A
ID
VDSS
A
TJ
VGS = 10 V VDS = 30 V
VGS = 10 V
VGS = 15 V
norm.
VGS(th)
normalized to
RDS(on) @0.5 ID25, VGS = 10 V
Fig. 1 Typical output characteristics ID = f (VDS) Fig. 2 Typical transfer characteristics ID = f (VGS)
Fig. 3 Typical normalized RDS(on) = f (I D) Fig. 4 Typical normalized RDS(on) = f (TJ)
Fig. 5 Continuous drain current ID = f (TC) Fig. 6 Typical normalized VDSS = f (TJ), VGS(th) = f (TJ)
© 2000 IXYS All rights reserved 4 - 4
VMK 90-02T2
0.001 0.01 0.1 1 10
0.001
0.01
0.1
1
D=0.02
D=0.05
D = single pulse
D = 0.1
D = 0.2
D = 0.5
s
K/W
ZthJK
0 100 200 300 400
0
2
4
6
8
10
Qg
nC
VDS = 100 V
ID = 40 A
IG = 2 mA
VGS
V
ID
1 10 100 1000
1
10
100
1000
Limited by RDS(on)
t = 100 ms
t = 10 ms
t = 1 ms
VDS
V
0 20406080100120
0
20
40
60
80
100
t
s
ID
gfs
A
0.00 0.25 0.50 0.75 1.00 1.25 1.50
0
50
100
150
200
V
A
0 5 10 15 20 25
0.1
1
10
100
nF
VSD
IS
Ciss
VDS
V
C
A
0
non-repetitive
TJ = 150°C
TK = 25°C
Crss
Coss
TJ = 25°C
TJ = 125°C
Fig. 7 Typical turn-on gate charge characteristics Fig. 8 Forward Safe Operating Area, ID = f (VDS)
Fig. 9 Typical capacitances C = f (VDS), f = 1 MHz Fig. 10 Typical forward characteristics of reverse
diode, IS = f (VSD)
Fig. 11 Typical transconductance gfs = f (ID) Fig. 12 Transient thermal resistance ZthJK = f (tp)
