S1F70000 SeriesEPSON5–1
Technical Manual
S1F77200Y Series
S1F77200Y
Series
DESCRIPTION
The S1F77200Y series products are non-adjusting volt-
age detectors being developed utilizing he base of the
CMOS silicon gate process.
This voltage detector consists of the reference voltage
circuit, voltage comparator, hysteresis circuit and out-
put circuit, all operating on smaller current.
A voltage range to be detected is internally set on re-
spective detectors. A wide variety of our standard prod-
ucts are grouped as shown below according to the out-
put format employed for the voltage detector output pin.
The S1F77200Y series employs N-channel open drain
output approach. And the S1F77210Y series and S1F
77220Y series employ the CMOS output and P-channel
output, respectively.
The package used is the SOT89-3 pin plastic package.
Our voltage detectors are used for determining battery
life, and also for monitoring supply voltage fed to mi-
crocomputers and LSI systems.
FEATURES
• Full lineups: 19 types are prepared for the detection
range between 2.0V to 5.0V.
For the detection range from 0.8V to 2.5V, 7 types
are available (products designed for lower voltage
detection).
• Low operating current: Typ. 2.0 µA (VDD = 5.0V).
• Low operating voltage: 1.5V at minimum.
• Absolute maximum rated voltage: 15V maximum.
• Highly stable built-in reference voltage source: Typ.
1.0V.
• Better temperature characteristics of output voltage:
Typ. -100ppm/°C.
S1F77200Y Series CMOS Voltage Detectors
S1F77200Y Series
5–2EPSONS1F70000 Series
Technical Manual
LINEUP Table 5-1
Product Voltage detectable Output type Output phase
Min. Typ. Max. Less than VDET VDET or above
S1F77210Y1C0 2.10 2.15 2.20 CMOS Low level High level
S1F77210Y1P0 2.20 2.25 2.30 CMOS Low level High level
S1F77210Y1S0 2.30 2.35 2.40 CMOS Low level High level
S1F77210Y1E0 2.50 2.55 2.60 CMOS Low level High level
S1F77210Y1F0 2.60 2.65 2.70 CMOS Low level High level
S1F77210Y1R0 2.73 2.80 2.87 CMOS Low level High level
S1F77210Y1G0 2.93 3.00 3.07 CMOS Low level High level
S1F77210Y1H0 3.13 3.20 3.27 CMOS Low level High level
S1F77210Y130 3.43 3.50 3.57 CMOS Low level High level
S1F77210Y1T0 3.90 4.00 4.10 CMOS Low level High level
S1F77210Y1M0 4.10 4.20 4.30 CMOS Low level High level
S1F77210Y1J0 4.30 4.40 4.50 CMOS Low level High level
S1F77210Y120 4.50 4.60 4.70 CMOS Low level High level
S1F77210Y1K0 4.70 4.80 4.90 CMOS Low level High level
S1F77210Y1L0 4.90 5.00 5.10 CMOS Low level High level
S1F77210Y2C0 2.10 2.15 2.20 CMOS High level Low level
S1F77210Y2F0 2.60 2.65 2.70 CMOS High level Low level
Product Voltage detectable Output type Output phase
Min. Typ. Max. Less than VDET VDET or above
S1F77200Y1T0 3.90 4.00 4.10 N ch Open Drain Low level Hi–Z
S1F77200Y1F0 2.60 2.65 2.70 N ch Open Drain Low level Hi–Z
S1F77200Y1C0 2.10 2.15 2.20 N ch Open Drain Low level Hi–Z
S1F77200Y1N0 1.85 1.90 1.95 N ch Open Drain Low level Hi–Z
S1F77200Y1B0 1.10 1.15 1.20 N ch Open Drain Low level Hi–Z
S1F77200Y1Y0 1.05 1.10 1.15 N ch Open Drain Low level Hi–Z
S1F77200Y1A0 1.00 1.05 1.10 N ch Open Drain Low level Hi–Z
S1F77200Y1V0 0.90 0.95 1.00 N ch Open Drain Low level Hi–Z
S1F77220Y2D0 1.20 1.25 1.30 P ch Open Drain High level Hi–Z
Table 5-2
S1F70000 SeriesEPSON5–3
Technical Manual
S1F77200Y Series
S1F77200Y
Series
BLOCK DIAGRAM
S1F77200Y1*0 Type S1F77200Y2*0 Type
S1F77210Y1*0 Type S1F77210Y2*0 Type
S1F77220Y1*0 Type S1F77220Y2*0 Type
Note: A different code can be employed for the ones preceded by * marking depending on their detecting
voltage specification.
V
DD
(2pin)
OUT
(1pin)
T
+
—
V
SS
(3pin)
T
V
REF
V
DD
(2pin)
OUT
(1pin)
T
+
—
V
SS
(3pin)
T
V
REF
V
DD
(2pin)
OUT
(1pin)
T
+
—
V
SS
(3pin)
T
V
REF
V
DD
(2pin)
OUT
(1pin)
T +
—
V
SS
(3pin)
T
V
REF
VDD
(2pin)
OUT
(1pin)
T
VSS
(3pin)
T
+
—
V
REF
V
DD
(2pin)
OUT
(1pin)
T
V
SS
(3pin)
T
+
—
V
REF
S1F77200Y Series
5–4EPSONS1F70000 Series
Technical Manual
PIN DESCRIPTIONS
Pin No. Pin name Description
1 OUT Voltage detection output pin
2VDD Input voltage pin (positive side)
3VSS Input voltage pin (negative side)
PIN ASSIGNMENTS SOT89-3pin
FUNCTIONAL DESCRIPTIONS
The S1F77200Y series has the circuit configuration as
shown in the figure below. For the detection, divided
potential (VREG) across the resistors inserted across the
power supply and the reference voltage (VREF) gener-
ated on the IC are entered to the voltage comparator.
Since the voltage comparator is designed to detect a tar-
get voltage even when potential difference between
VREG and Vref minute, hysteresis is added so that the
comparator may not fail due to noise on the power sup-
ply and such. In the example shown in the figure below,
detection voltage (VDET) for the input voltage drop and
relief voltage (VREL) for the increased input voltage are
set based the following formula.
Detection voltage: VDET = R1+R2+R3 • VREF
R2+R3
Relief voltage: VREL = R1+R2+R3 • VREF
R3
132
V
DD
(2pin)
V
SS
(3pin)
OUT
(1pin)
T
R1
R3
R2
+
—
T
(V
REG
)
V
REF
S1F70000 SeriesEPSON 5–5
Technical Manual
S1F77200Y Series
S1F77200Y
Series
The following figures show the input and output characteristics of the S1F77200Y series.
[S1F772*0Y1*0 Type] S1F772*0Y2*0 Type
Note: The above input/output characteristics assumes that the pull up resistor is connected to the output pin for
the S1F77200Y series. For the S1F77220 series, it assumes that the pull down resistor is connected
between the OUT and VDD pins.
If the input voltage that is applied between VDD and VSS terminals drops below the lower limit of voltage
for IC operation, the output condition of the OUT terminal may become unsteady.
Ensure to prevent problems from occurring in circuit operation.
ABSOLUTE MAXIMUM RATINGS
OUT
0
0V
DD
(V1)
V
HYS
V
DET
: Detection voltage
V
REL
: Relief voltage
V
REL
V
DET
Operating voltage
upper limit
Operating voltage
lower limit
OUT
0
0V
DD
(V1)
V
HYS
V
DET
: Detection voltage
V
REL
: Relief voltage
V
REL
V
DET
Operating voltage
upper limit
Operating voltage
lower limit
Parameter Symbol Rating Unit
Supply voltage range VDD – VSS 15 V
VDD + 0.3 to VSS – 0.3
(S1F77210)
Output voltage VO15 to VSS – 0.3 V
(S1F77200)
VDD + 0.3 to VDD – 15
(S1F77220)
Output current IO50 mA
Allowable dissipation PD200 mW
Operating temperature Topr –40 to +85 °C
–30 to +85
(designed for lower voltage operation)
Storage temperature Tstg –65 to +150 ˚C
Soldering temperature Tsol 260 · 10 ˚C · s
and time (at leads)
S1F77200Y Series
5–6EPSONS1F70000 Series
Technical Manual
ELECTRIC CHARACTERISTICS
S1F77210Y1P0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.20 2.25 2.30 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 3.0V — –1.00 –0.25 mA
OUT = 2.7V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F77210Y1C0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.10 2.15 2.20 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 3.0V — –1.00 –0.25 mA
OUT = 2.7V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F70000 SeriesEPSON5–7
Technical Manual
S1F77200Y Series
S1F77200Y
Series
S1F77210Y1S0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.30 2.35 2.40 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 3.0V — –1.00 –0.25 mA
OUT = 2.7V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F77210Y1E0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.50 2.55 2.60 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 3.0V — –1.00 –0.25 mA
OUT = 2.7V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y Series
5–8EPSONS1F70000 Series
Technical Manual
S1F77210Y1F0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.60 2.65 2.70 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 3.0V — –1.00 –0.25 mA
OUT = 2.7V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F77210Y1R0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.73 2.80 2.87 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 3.0V — –1.00 –0.25 mA
OUT = 2.7V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F70000 SeriesEPSON5–9
Technical Manual
S1F77200Y Series
S1F77200Y
Series
S1F77210Y1G0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.93 3.00 3.07 V
Hysteresis width VHYS VHYS = VREL – VDET 0.09 0.15 0.21 V
Operating current IDD VDD = 4.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 4.0V — –1.60 –0.40 mA
OUT = 3.6V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 4V→3V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 4V→3V — — 200 µs
Ta = –30°C to +85°C
S1F77210Y1H0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 3.13 3.20 3.27 V
Hysteresis width VHYS VHYS = VREL – VDET 0.09 0.15 0.21 V
Operating current IDD VDD = 4.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 4.0V — –1.60 –0.40 mA
OUT = 3.6V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 4V→3V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 4V→3V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y Series
5–10EPSONS1F70000 Series
Technical Manual
S1F77210Y130 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 3.43 3.50 3.57 V
Hysteresis width VHYS VHYS = VREL – VDET 0.09 0.15 0.21 V
Operating current IDD VDD = 4.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 4.0V — –1.60 –0.40 mA
OUT = 3.6V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 4V→3V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 4V→3V — — 200 µs
Ta = –30°C to +85°C
S1F77210Y1T0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 3.90 4.00 4.10 V
Hysteresis width VHYS VHYS = VREL – VDET 0.13 0.20 0.27 V
Operating current IDD VDD = 5.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 5.0V — –2.00 –0.50 mA
OUT = 4.5V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 5V→4V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 5V→4V — — 200 µs
Ta = –30°C to +85°C
S1F70000 SeriesEPSON5–11
Technical Manual
S1F77200Y Series
S1F77200Y
Series
S1F77210Y1M0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 4.10 4.20 4.30 V
Hysteresis width VHYS VHYS = VREL – VDET 0.13 0.20 0.27 V
Operating current IDD VDD = 5.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 5.0V — –2.00 –0.50 mA
OUT = 4.5V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 5V→4V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 5V→4V — — 200 µs
Ta = –30°C to +85°C
S1F77210Y1J0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 4.30 4.40 4.50 V
Hysteresis width VHYS VHYS = VREL – VDET 0.13 0.20 0.27 V
Operating current IDD VDD = 5.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 5.0V — –2.00 –0.50 mA
OUT = 4.5V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 5V→4V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 5V→4V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y Series
5–12EPSONS1F70000 Series
Technical Manual
S1F77210Y120 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 4.50 4.60 4.70 V
Hysteresis width VHYS VHYS = VREL – VDET 0.08 0.15 0.22 V
Operating current IDD VDD = 5.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 5.0V — –2.00 –0.50 mA
OUT = 4.5V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 5V→4V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 5V→4V — — 200 µs
Ta = –30°C to +85°C
S1F77210Y1K0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 4.70 4.80 4.90 V
Hysteresis width VHYS VHYS = VREL – VDET 0.13 0.20 0.27 V
Operating current IDD VDD = 5.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 5.0V — –2.00 –0.50 mA
OUT = 4.5V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 5V→4V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 5V→4V — — 200 µs
Ta = –30°C to +85°C
S1F70000 SeriesEPSON5–13
Technical Manual
S1F77200Y Series
S1F77200Y
Series
S1F77210Y1L0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 4.90 5.00 5.10 V
Hysteresis width VHYS VHYS = VREL – VDET 0.13 0.20 0.27 V
Operating current IDD VDD = 6.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 6.0V — –2.40 –0.60 mA
OUT = 5.4V
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 6V→4V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 6V→4V — — 200 µs
Ta = –30°C to +85°C
S1F77210Y1C0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.10 2.15 2.20 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 2.0V — –0.40 –0.10 mA
OUT = 1.8V
Low level output current IOL VDD = 3.0V 0.50 2.00 — mA
OUT = 0.3V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y Series
5–14EPSONS1F70000 Series
Technical Manual
S1F77210Y1F0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.60 2.65 2.70 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
High level output current IOH VDD = 2.0V — –0.40 –0.10 mA
OUT = 1.8V
Low level output current IOL VDD = 3.0V 0.50 2.00 — mA
OUT = 0.3V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y1T0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 3.90 4.00 4.10 V
Hysteresis width VHYS VHYS = VREL – VDET 0.13 0.20 0.27 V
Operating current IDD VDD = 5.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 5V→4V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 5V→4V — — 200 µs
Ta = –30°C to +85°C
S1F70000 SeriesEPSON5–15
Technical Manual
S1F77200Y Series
S1F77200Y
Series
S1F77200Y1F0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.50 — 12.0 V
Detection voltage VDET Ta = 25°C 2.60 2.65 2.70 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 2.0V 0.20 1.00 — mA
OUT = 0.2V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y1C0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 0.80 — 10.0 V
Detection voltage VDET Ta = 25°C 2.10 2.15 2.20 V
Hysteresis width VHYS VHYS = VREL – VDET 0.05 0.10 0.15 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 1.5V 0.15 0.75 — mA
OUT = 0.15V
VDD = 3V→2V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 3V→2V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y Series
5–16EPSONS1F70000 Series
Technical Manual
S1F77200Y1N0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 0.80 — 10.0 V
Detection voltage VDET Ta = 25°C 1.85 1.90 1.95 V
Hysteresis width VHYS VHYS = VREL – VDET 0.03 0.05 0.08 V
Operating current IDD VDD = 3.0V — 2.00 5.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 1.5V 0.15 0.75 — mA
OUT = 0.15V
VDD = 2V→1V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 2V→1V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y1B0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 0.80 — 10.0 V
Detection voltage VDET Ta = 25°C 1.10 1.15 1.20 V
Hysteresis width VHYS VHYS = VREL – VDET 0.03 0.05 0.08 V
Operating current IDD VDD = 1.5V — 1.50 4.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 0.8V 0.05 0.40 — mA
OUT = 0.16V
VDD = 1.5V→0.8V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 1.5V→0.8V — — 200 µs
Ta = –30°C to +85°C
S1F70000 SeriesEPSON 5–17
Technical Manual
S1F77200Y Series
S1F77200Y
Series
S1F77200Y1Y0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 0.80 — 10.0 V
Detection voltage VDET Ta = 25°C 1.05 1.10 1.15 V
Hysteresis width VHYS VHYS = VREL – VDET 0.03 0.05 0.08 V
Operating current IDD VDD = 1.5V — 1.50 4.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 0.8V 0.05 0.40 — mA
OUT = 0.16V
VDD = 1.5V→0.8V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 1.5V→0.8V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y1A0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 0.80 — 10.0 V
Detection voltage VDET Ta = 25°C 1.00 1.05 1.10 V
Hysteresis width VHYS VHYS = VREL – VDET 0.03 0.05 0.08 V
Operating current IDD VDD = 1.5V — 1.50 4.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 0.8V 0.05 0.40 — mA
OUT = 0.16V
VDD = 1.5V→0.8V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 1.5V→0.8V — — 200 µs
Ta = –30°C to +85°C
S1F77200Y Series
5–18EPSONS1F70000 Series
Technical Manual
S1F77200Y1V0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 0.80 — 10.0 V
Detection voltage VDET Ta = 25°C 0.90 0.95 1.00 V
Hysteresis width VHYS VHYS = VREL – VDET 0.03 0.05 0.08 V
Operating current IDD VDD = 1.5V — 1.50 4.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 0.8V 0.05 0.40 — mA
OUT = 0.16V
VDD = 1.5V→0.8V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 1.5V→0.8V — — 200 µs
Ta = –30°C to +85°C
S1F77220Y2D0 (Ta = –30°C to +85°C is assumed except where otherwise specified.)
Parameter Symbol Conditions (VSS = 0.0V) Min. Typ. Max. Unit
Operating voltage VDD 1.5 — 12.0 V
Detection voltage VDET Ta = 25°C 1.20 1.25 1.30 V
Hysteresis width VHYS VHYS = VREL – VDET 0.03 0.05 0.08 V
Operating current IDD VDD = 3.0V — 1.50 4.00 µA
Detection voltage ∆VDET –300 –100 +100 ppm/°C
temperature characteristics VDET
Low level output current IOL VDD = 1.5V — –0.03 –0.06 mA
OUT = 0.64V
VDD = 1.5V→0.8V —840 µs
Detection voltage TPHL Ta = 25°C
response time VDD = 1.5V→0.8V — — 200 µs
Ta = –30°C to +85°C
S1F70000 SeriesEPSON 5–19
Technical Manual
S1F77200Y Series
S1F77200Y
Series
EXAMPLES OF EXTERNAL CONNECTION
(3pin)
(2pin)
(1pin)
V
DD
V
SS
OUT
S1F77210Y
Series
Input voltage (+)
Input voltage (—)
Voltage detection output
(3pin)
(2pin)
(1pin)
OUT
Input voltage (+)
Input voltage (—)
Voltage detection output
Power supply for pull up resistor
V
DD
V
SS
S1F77210Y
Series
(3pin)
(2pin)
(1pin)
OUT
Power supply for
pull down resistor
Input voltage (+)
Input voltage (—)
Voltage detection output
V
DD
V
SS
S1F77210Y
Series
S1F77200Y Series
5–20EPSONS1F70000 Series
Technical Manual
SAMPLE CIRCUITS (S1F77210Y Series)
CR timer circuit
When the S1F77210Y circuit configured as shown in Figure 5-14, it can be used as a CR timer circuit.
Figure 5-14 CR timer circuit
Battery backup circuit
The following is an example of the supply voltage switching circuit for the battery backup supply configured featur-
ing the S1F77210Y series.
Figure 5-15 Battery backup circuit
V
DD
V
DD
V
O
V
SS
OUT
R
C
S1F77210Y
VDD VCC
VBAT
VDD
VO
VSS
PNP transistor
NPN transistor
Enable signal
S1F77210Y
S1F70000 SeriesEPSON 5–21
Technical Manual
S1F77200Y Series
S1F77200Y
Series
SAMPLE CIRCUITS (S1F77200Y Series)
CR timer circuit
When the S1F77200Y circuit is configured as shown in Figure 5-16, it can be used as a CR timer circuit.
Figure 5-16 CR timer circuit
Battery backup circuit
The following is an example of the supply voltage switching circuit for the battery backup configured featuring the
S1F77200Y series.
Figure 5-17 Battery backup circuit
V
DD
V
CC
V
BAT
V
DD
V
O
V
SS
PNP transistor
NPN transistor
Enable signal
S1F77200Y
V
DD
V
DD
V
DD
V
O
V
SS
OUT
R
C
S1F77200Y
S1F77200Y Series
5–22EPSONS1F70000 Series
Technical Manual
S1F
77210Y
PRECAUTIONS
Short cut current on the S1F77210 (CMOS output voltage detector)
Since the S1F77200Y series employs CMOS output, as an input voltage nears the detection voltage range, short cut
current is flown between VDD and VSS. The short cut current is voltage sensitive, and approximately 2 mA flows at
5V level or so (our products are not check for short cut current after volume production has been started).
Although duration of the short cut current depends on operating conditions (such as type the circuit used and supply
impedance), normally it is assumed to continue several usec to several dozens of usec.
If a load with high impedance is inserted across the power supply, oscillation can be introduced by the short cut
current. In order to reject this trouble, the following measures should be considered:
(1) Reduce the resistance value.
(2) Insert a capacitor.
(3) Replace with the S1F77200Y series (it employs N-channel open drain approach).
