BF198 SILICON PLANAR TRANSISTOR N-P-N transistor in a plastic TO-92 package. The BF 198 has a very low feedback capacitance and js intended for use in the forward gain control stage of the television 1.f. amplifier. QUICK REFERENCE DATA Collector-base voltage (open emitter) VCBO max. 40 Vv Collector-emitter voltage (open base} VCEQ max. 30 V Collector current (d.c.} Ic max. 25 mA Total power dissipation up to Tamp = 25 OC Prot max. 500 mW Junction temperature Tj max. 150 9C Transition frequency at f = 100 MHz Ic =4mA; Vee = 10 V fT typ. 400 MHz Feedback capacitance at f = 10,7 MHz [c= 1mA;VceE = 10V Cre typ. 200 fF MECHANICAL DATA Dimensions in mm Fig. 1 TO-92. Pinning c j 1 = base b- Pe 2 = emitter ' 3 = collector fears e od 5.2 max v 12.7 min "| 7 Yo4 a . 48 4 ae 4 040 48 L. a max 254 Pe | ' ne 1. p | a) MBC Note (1) Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. September 1994 453 BF198 RATINGS Limiting values in accordance with the Absolute Maximum System (EC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value) Total powcr dissipation up to Tamb = 25 C Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient in free air VoBo VoRo VieBo 1oM Prot Tsty Rth j-a max, 40 marx. 30 max, 4 max. 25 max. 25 max. 500 65 to +150 max. 150 = 0,25 Vy mA mA mW OC: oC K/mW 454 September 1994 BF198 CHARACTERISTICS Tamb = 25 C unless otherwise specified Base current at about 50 dB gain control Ie = 6 mA; Vor =2V tl le = 15 mA; Vey = SV Base current Ic = 4 mA; Vor =10V Base-cmitter voltage 1) Ic = 4 mA; Vor =10V Feedback capacitance at f = 10.7 Milz lo = 1 mA: Vep = 10V Transition frequency at f = 100 MIlz Iq = 4mA; Voy = 10 V 1) VBE decreases by about 1,7 mV/K with increasing temperature. Ip Ip VBE Ky typ. typ. typ. typ. 270 1,5 60 150 760 850 200 400 yA mA LA pA mV mV fF MHz September 1994 455