DAC 1222 LCD Nsc D/A-IC 12 Bit, 0,2% Linearity, 500ns Settling, -40...+85 18-DIC DAC 4220...1222 LCN Nsc D/A-1C =DAC 1220LCD...1222LD: 0...+70 418-DIP DAC 1220...1222LD Nsc DyA-IC =DAC 1220LCD...1222LCD: -55..4125 18-DIG DAC 1230 LCD Nsc D/A-IC 12 Bit, 0,012% Linearity, 11s Settling, -40...+85 20-DIe - DAC 1231 LCD Nsc D/A-IC 12 Bit, 0,024% Linearity, 1s Settling, -40...+85 20-DIC DAC 1232 LCD Wsc D/AIC- = 12 Bit, 0,05% Linearity, 1pss Settling, -40...+85 20-DIC - DAG 1280 ACD Wso D/A-IC 12 Bit, 0,012% Linearity, 0...+70 24-DIC - ee DAC 1280 CD Nse D/A-IC 12 Bit, 0,024% Linearity, 0...+70 24-DIC - DAC 1280....1 _ Nsc D/A-IC _=DAC 1280(A): -25...+85 _ 24-DIC _ : DAC 1285 ACD,HCD Nse D/A-IC 12 Bit, 0,012% Linearity, -25...+85 24-DIC - - a DAC 1285 AD Nec D/A-IC =DAC 1285ADC,HDC: -55...4125 4-DIG ; . DAC1408(A...C)DC,PC Feh D/A-IC 8 Bit, multiplying, hi-speed(85ns Settl.), 0...+70 16-DIC,DIP AM 1408..., MC 1408... A<+0,19%, B<+0,39%, C<+0,78% Accuracy DAC 1508 DM Fch D/A-IC =DAC 1408...: <20,19% Accuracy, -55,..+125 16-DIC _ AM 1508..., MC 1508... DAN 801 Rhm Si-Di =DAN 401: 8 Di, Common Cathode 9-SIP - - DAN 803 Rhm Si-Di =DAN 401: 8 Di, Common Cathode 9-SIP - DAP 801 Rthm Si-Di =DAN 401: 8 Di, Common Anode 9-SIP - DAP 803 Ahm S-Di, = =DAN 404; 8 Di, Common Anode 9-SIP - OB Si-N =28D1418-DB (SMD-Marking) 39 SOT-89 >28D1418 DB Si-N =28D1619 (SMD-Marking) 39 SOT-89 2SD1619 DB Si-N =2$D1766 (SMD-Marking) 39 SOT-89 2SD1766 DBis} Si-P =BCW 67B (SMD-Marking) 35 SOT-23 >BCW 67B DB Si-P =BF 623 (SMD-Marking} 39 SOT-89 >BF 623 DB Si-P =BF 723 (SMD-Marking) =39 SOT-223 >BF 723 DB MOS-N-FET-e =PA572T (SMD-Marking) 45(2mm) SOT-353 >YPAS72T DB 1 _ Si-Di____=BAR 43A (SMD-Marking) ee 35 SOT-23 >BAR 43A ee DB1A...P Gien,Rea Si-Br Br Rr, 50...1000V, 1A, Uf<1,1V(1A) 4-DIP (+-==) A0503...0580, DF 01...10 _ A=50, B=200, D=400, F=50,M=600,N=800,P=1000V DB2 Si-Di =BAR 43B (SMD-Marking) 35 SOT-23 ; >BAR 438 DB3 Tho Diac Ub=28...36V, Ib<0,3mA 311 DOQ-7,D0-41 - DB 3-|-35 Diac Ub=28...36V, Ib<0,05mA 311 DO-7 - DB 4 Tho Diac =DB 3: Ub=35...45V 3il DO-7 - DBE Tho Diac =DB 3: Ub=56...70V atl DO-7 - So DB6 Si-Di =BAY 85S (SMD-Marking) 35 SOT-23 _ >BAY 85S DBC 146-4(A....C) ___ SiN =BC 146: _ 36b BC 146 ee DBC 201 Si-P =BC 201: 36b >BC 201 DBC 202 Si-P =BC 202: 36b BC 202 DBG 203 Si-P =BC 203: 36b. oe >BC 203 DBP Si-N =28D1766-P (SMD-Marking) 39 SOT-89 28D1766 DBQ Si-N =28D1766-0 (SMD-Marking) 39 SOT-89 28D1766 DBR Si-N =2$D1766-R (SMD-Marking) 39 SOT-89 >28D1766 pe GP __=AF 137 _ AF 2398 5g AF 137 bc Si-N =2803444-C (SMD-Marking) 39 SOT-89 2803444 BC Si-N =28D1418-DC (SMD-Marking) 39 SOT-89 >28D1418 oC Si-N =2SD1620 (SMD-Marking} 39 SOT-89 25D1620 oc Si-N =2$D1767 (SMD-Marking} 39 SOT-89 2SD1767 DC(s} Si-P =BCW 67C (SMD-Marking) 35 SOT-23 BCW 67C DC Si-N =BF 620 (SMD-Marking} 39 SOT-89 >BF 620 oC Si-N =BF 720 (SMD-Marking} =39 SOT-223 >BE 720 Oo SiN __-=BFN 20 (SMD-Marking) 39) SOT-89_ BEN 20 _ DC 018 Cigital E. VO-1C Ser.-Par./Par.-Ser. Converter 40-DiP DS 8609DC pco2t Cigitale. DIG-IC 8-Bit Bustreiber/Bus Driver, bidirectional 20-DIP DS 86380 DC 34 Tho Diac Ub=30...38V, Ib<50nA 3iI DO-35 - DC 38 Tho Diac Ub=34...42V, Ib<50UA 311 DO-35 - DC 42 Tho Diac Ub=39...45V, Ib<SOUA 3il DO-35 . - DeP Si-N =28D1767-P (SMD-Marking} 39 SOT-89 28D1767 dca Si-N =28D1767-Q (SMD-Marking) 39 SOT-89 28D1767 OCR Si-N =28D1767-R (SMD-Marking) 39 SOT-89 28D1767 OD Si-N =2802463-D (SMD-Marking) 35 SOT-23 2802463 BD Si-N - =2803441-D (SMD-Marking) 35 SOT-23 2803441 OD Si-N =2803444-D (SMD-Marking) 39 SOT-89 2803444 oD Si-N =28D1419-DD (SMD-Marking} 39 SOQT-89 28D1419 DD Si-N =2$D1621 (SMD-Marking) 39 SOT-89 28D1621 DD Si-N =BFN 16 (SMD-Marking) 39 SOT-89 >BFN 16 oo Z-Di _=8M 6T 6V8 (SMD-Marking} T1a(6x4mm) SOD-6 ->$M 6T.... DD 7661 LIN-IC TV Tuning Processor 40-DIP - DD 7662 __ ___LIN-IC TV-Tuning Processor 16-DIP - DE Si-P =2SA1037KLN-E (Typ-Code/Stempel/mark.} 35 0T-23 2SA1037KLN DE Si-N =2$C2463-E (SMD-Marking) 35 SOT-23 28C2463 DE Si-N =2$03441-E (SMD-Marking) 35 S0T-23 2803441 DE Si-N =2803444-E (SMD-Marking) 39 SOT-89 2803444 DE Si-N =28D1419-DE (SMD-Marking) 39 SOT-89 28D1419 DE Si-N 228D1622 (SMD-Marking) 39 SOT-89 28D1622 DE Si-N-Darl =28D1834 (SMD-Marking) 39 SOT-89 +28D1834 DE Si-N =BFN 18 (SMD-Marking) 39 SOT-89 >BFN 18 DE 2-Di =SM 6T 6V8A (SMD-Marking) 7ia{6x4mm) SOD-6 SM ET... DF Si-N =2$02463-F (SMD-Marking) 35 SOT-23 2802463 OF Si-N =2$C3441-F (SMD-Marking) 35 80-23 2803441 OF Si-N =28D1623 (SMD-Marking) 39 SOT-89 2$D1623 DF(s) Si-P =BCW 68F (SMD-Marking) 35 SOT-23 >BCW 68F OF Si-P =BF 621 {SMD-Marking) 39 S0T-89 BF 621 DF Si-P =BF 721 (SMD-Marking) =39 SOT-223 BF 721 OF Si-P =BFN 21 (SMD-Marking) 39 SOT-89 BFN 21 DF Z-Di =SM 6T 7V5 (SMD-Marking} 71a(6x4mm) SOD-6 SM 6T.... __ OF 01 C-Di AC 3ta _ _ DF 01(M,S} Cie Si-Br Br Rr, 100V, 1A, Uf<1,1V(1A) 4-DIP A 0526, DB 1B DF 02(M,S) Cie Si-Br =DF 01(M), 200V 4-DIP A 0553, DB 1B OF 04(M,S) Cie Si-Br =DF 01(M): 400V 4-DIP A 0580, DB 1D DF 005(M,S) Gie Si-Br =DF 01(M): 50V 4-DIP A 0506, DB 1A DF 06(M,S) Gie Si-Br =DF 01(M): 600V 4-DIP DB 1M DF 08(M,S} Cile Si-Br =DF 01(M): 800V 4-DIP DB-1N DBF 40(M,S) Gie Si-Br =DF O1(M): 1000V 4-BIP DB 1P