KSD-
2006-000
1
S
D
Z
4
V
3
Z
ener Diode
Featu
res
•
Compact type
•
Radi
ation size 1.3mm
×
2.4mm
•
Surface mount lead confi
gur
ati
on
Orderin
g
Inform
ation
T
y
p
e
N
O
.
M
a
r
k
i
n
g
P
a
c
k
a
g
e
C
o
d
e
S
D
Z
4
V
3
W
9
S
O
T
-
2
3
O
u
t
l
i
n
e
D
i
m
e
n
s
i
o
n
s
u
n
i
t
:
mm
PIN Conne
cti
ons
1. Anode
2. NC
3. Cath
ode
1
3
2
S
S
e
e
m
m
i
i
c
c
o
o
n
n
d
d
u
u
c
c
t
t
o
o
r
r
2.4
±
0.1
1.30
±
0.1
0.45~0.60
0.4 T
yp.
2.9
±
0.1
1.12 Ma
x.
0.38
0~0.1
0.124
-0.03
+0.05
3
1
2
1.90 T
yp.
0.2 Mi
n.
KSD-
2006-000
2
SDZ4V3
A
b
s
o
l
u
t
e
m
a
x
i
m
u
m
r
a
t
i
n
g
s
(T
a=25
°
°
°
°
C)
Characteristic Symbol
Ratings
Unit
P
o
wer dissipation
P
D
200
mW
Junction temper
ature
T
j
150
°
C
Storage t
emperatu
re
T
stg
-55~150
°
C
E
l
e
c
t
r
i
c
a
l
C
h
a
r
a
c
t
e
r
i
s
t
i
c
s
(T
a=25
°
°
°
°
C)
Characteristic Symbol
T
est
Condition
Min.
T
yp.
Max.
Unit
Ze
ne
r
v
o
l
t
a
g
e
V
Z
I
Z
=5mA 4.11
-
4.49
V
Dynamic impedan
ce
Z
ZT
I
Z
=5mA -
-
88
Ω
KNEE dyn
a
mic impedan
ce
Z
ZK
I
Z
=0.25mA -
-
2500
Ω
R
ev
erse current
I
R
V
R
=1V -
-
5
µ
A
KSD-
2006-000
3
SDZ4V3
Fig. 1 P
D-
T
a
Fig. 2 I
Z-
V
Z
Electri
cal Cha
racteri
stic Cu
rves
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