CMBT3904E NPN
CMBT3906E PNP
ENHANCED SPECIFICATION
SURFACE MOUNT
COMPLEMENTARY
SILICON TRANSISTORS
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CMBT3904E
(NPN) and CMBT3906E (PNP) are general purpose
transistors with enhanced specifications. These
devices are ideal for applications where ultra small
size and power dissipation are the prime requirements.
Packaged in the FEMTOmini™ SOT-923 package,
these transistors provide performance characteristics
suitable for the most demanding size constrained
applications.
MARKING CODES: CMBT3904E: B
CMBT3906E: G
MAXIMUM RATINGS: (TA=25°C) SYMBOL UNITS
Collector-Base Voltage VCBO 60 V
Collector-Emitter Voltage VCEO 40 V
Emitter-Base Voltage VEBO 6.0 V
Continuous Collector Current IC 200 mA
Power Dissipation PD 100 mW
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 1250 °C/W
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
NPN PNP
SYMBOL TEST CONDITIONS MIN TYP TYP MAX UNITS
ICEV V
CE=30V, VEB=3.0V 50 nA
BVCBO I
C=10µA 60 115 90 V
BVCEO I
C=1.0mA 40 60 55 V
BVEBO I
E=10µA 6.0 7.5 7.9 V
VCE(SAT) I
C=10mA, IB=1.0mA 0.057 0.050 0.100 V
VCE(SAT) I
C=50mA, IB=5.0mA 0.100 0.100 0.200 V
VBE(SAT) I
C=10mA, IB=1.0mA 0.650 0.750 0.750 0.850 V
VBE(SAT) I
C=50mA, IB=5.0mA 0.850 0.850 0.950 V
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♦Enhanced specification.
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FEATURES
• Very Small Package Size
• 200mA Collector Current
• Low VCE(SAT) (0.1V Typ @ 50mA)
• Miniature 0.8 x 0.6 x 0.4mm
Ultra Low height profile
FEMTOmini™ Surface Mount Package
APPLICATIONS
• DC / DC Converters
• Voltage Clamping
• Protection Circuits
• Battery powered applications including:
Cell Phones, Digital Cameras, Pagers,
PDAs, Laptop Computers, etc.
SOT-923 CASE
R1 (8-January 2010)
www.centralsemi.com