2SA1209 / 2SC2911
No.0779-1/5
Features
•Adoption of FBET process.
•High breakdown voltage.
•Good linearity of hFE and small Cob.
•Fast switching time.
Specifications ( ) : 2SA1209
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)180 V
Collector-to-Emitter Voltage VCEO (--)160 V
Emitter-to-Base Voltage VEBO (--)5.0 V
Collector Current IC(--)140 mA
Collector Current (Pulse) ICP (--)200 mA
Collector Dissipation PC1.0 W
Tc=25°C10W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN0779E
61307CB TI IM TC-00000752 / 70502TN (KT) / 71598HA (KT) / D251MH / 5147KI / 3135KI / O193KI,TS
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer
'
s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer
'
s products or
equipment.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
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SANYO Semiconductors
DATA SHEET
2SA1209 / 2SC2911
PNP / NPN Epitaxial Planar Silicon Transistors
160V / 140mA High-Voltage Switching
and AF 100W Predriver Applications
2SA1209 / 2SC2911
No.0779-2/5
Electrical Characteristics at Ta=25°C
Ratings
Parameter Symbol Conditions min typ max Unit
Collector Cutoff Current ICBO VCB=(--)80V, IE=0A (--)0.1 µA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)0.1 µA
DC Current Gain hFE VCE=(--)5V, IC=(--)10mA 100* 400*
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)10mA 150 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (4.0)3.0 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)50mA, IB=(--)5mA
(--0.14)0.07
(--0.4)0.3 V
Turn-On T ime ton See specified Test Circuit. 0.1 µs
Storage Time tstg See specified Test Circuit. 1.5 µs
Fall T ime tfSee specified Test Circuit. 0.1 µs
* : The 2SA1209/2SC2911 are classified by 10mA hFE as follows :
Rank R S T
hFE 100 to 200 140 to 280 200 to 400
Package Dimensions Switching Time Test Circuit
unit : mm (typ)
7515-002
Collector-to-Emitter Voltage, VCE -- V
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Collector Current, IC -- mA
IC -- VCE
ITR03021
0--10 --20 --30 --40 --50 --60 --70 0 10 20 30 40 50 60 70
0
--20
--40
--60
--80
--100
--120
--140
0
20
40
60
80
100
120
140
ITR03022
--0.1mA
--0.2mA
--0.3mA
--0.4mA
--0.5mA
--0.6mA
IB=0mA
2SA1209 2SC2911
0.1mA
0.2mA
0.3mA
0.4mA
0.6mA
IB=0mA
0.5mA
8.0 4.0
1.6
0.8
0.6
0.8
7.0
3.0 1.5
11.0
15.5
0.5
2.7
123
3.0
4.8
1.2
2.4
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126
IN OUT
20V
50Ω
3kΩ
5kΩ
2kΩ
1µF1µF
--2VIC=10IB1=--10IB2=10mA
++
RB
IB1
IB2
For PNP, minus sign is omitted.
2SA1209 / 2SC2911
No.0779-3/5
10
100
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
10
100
Collector-to-Base Voltage, VCB -- V
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, fT -- MHz
fT -- IC
Collector Current, IC -- mA
10
100
Cob -- VCB
Gain-Bandwidth Product, fT -- MHz
fT -- IC
Collector Current, IC -- mA
10
100
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- mA
Collector Current, IC -- mA
DC Current Gain, hFE
hFE -- IC
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- mA
IC -- VBE
0
--20
--40
--60
--80
--100
--120
--140
20
0
40
60
80
100
120
140
ITR03024
ITR03023
--
0.4
--
0.6
--
0.8
--
1.0
--
0.20 0.4 0.6 0.8 1.00.20
2SA1209 2SC2911
ITR03025
57753257322
--10 --100--1.0
1000
5
3
7
100
10
2
5
3
7
2
57753257322
10 1001.0
1000
5
3
7
100
10
2
5
3
7
2
ITR03026
2SA1209
VCE=--5V 2SC2911
VCE=5V
ITR03028
100
10
3
2
3
2
5
7
ITR03027
573257322
--10 --100--1.0
100
10
3
2
3
2
5
7
573257322
10 1001.0
2SC2911
VCE=10V
2SA1209
VCE=--10V
ITR03030
ITR03029
23 57 75
--10--1.0 --100
23
10
1.0
2
3
2
3
7
5
5
7
100
23 57 75
101.0 100
23
10
1.0
2
3
2
3
7
5
5
7
100
2SA1209
f=1MHz 2SC2911
f=1MHz
2SA1209 / 2SC2911
No.0779-4/5
0
0.2
0.4
0.6
0.8
1.0
1.2
2006040 80 100 140120 160
PC -- Ta
ITR03036
No heat sink
A S O
2SA1209 / 2SC2911
PC -- Tc
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
Ambient Temperature, Ta -- °C
Collector Dissipation, PC -- W
Case Temperature, Tc -- °C
Collector Dissipation, PC -- W
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
Collector Current, IC -- mA
VCE(sat) -- IC
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
ITR03032
ITR03031
--0.1
--1.0
2
3
3
2
7
5
2
5
7
0.1
1.0
2
3
2
7
5
3
5
7
--1.0
57 57 75
--10 --100
223231.0
57 57 75
10 100
22323
2SC2911
IC / IB=10
2SA1209
IC / IB=10
ITR03033
--1.0 --10
57 --100
7222335 751.0 10
57 100
7222335 75
ITR03034
2SA1209
IC / IB=10
--1.0
--10
3
7
5
3
2
5
7
1.0
10
3
5
7
5
3
2
7
2SC2911
IC / IB=10
ITR03035
10 100
723 5 723 5 23 5
10
2
3
5
7
100
2
3
5
2
3
5
7
1ms
1s
DC operation
ICP=200mA
IC=140mA
020406080100 120 160140
ITR03037
0
2
4
8
6
12
10
2SA1209 / 2SC2911
Collector Current, IC -- mA
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- mA
VBE(sat) -- IC
Base-to-Emitter Saturation Voltage, VBE(sat) -- V
2SA1209 / 2SC2911
DC Single pulse
For PNP, minus sign is omitted
2SA1209 / 2SC2911
No.0779-5/5PS
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