1214-300V R1
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
GENERAL DESCRIPTION
The 1214-300V is an internally matched, COMMON BASE transistor capable
of providing 300 Watts of pulsed RF output power at three hundred thirty
microseconds pulse width, ten percent duty factor across the band 1200 to
1400 MHz. This hermetically solder-sealed transistor is specifically designed
for L-Band radar applications. It utilizes gold metallization and diffused
emitter ballasting to provide high reliability and supreme ruggedness.
CASE OUTLINE
55ST, STYLE 1
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25oC 420 Watts
Maximum Voltage and Current
BVces Collector to Emitter Voltage 75 Volts
BVebo Emitter to Base Voltage 3.0 Volts
Ic Collector Current 20 Amps
Maximum Temperatures
Storage Temperature - 65 to + 200oC
Operating Junction Temperature + 200oC
RF ELECTRICAL CHARACTERISTICS @ 25 OC
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pg
η
ηη
ηc
Rl
Droop
Flatness
VSWR-S
VSWR-T
Power Out
Power Gain
Collector Efficiency
Input Return loss
Droop
Flatness
Load Mismatch Stability
Load Mismatch Tolerance
Freq = 1200 – 1400 MHz
Vcc = 50 Volts
Pin = 40 Watts
Pulse Width = 330 µS
Duty Factor = 10%
300
8.75
50
10
55
410
0.5
1. 0
1.5:1
2.5:1
Watts
dB
%
dB
dB
dB
Note: test @ 1.2, 1.3, and 1.4 GHz.
FUNCTIONAL CHARACTERISTICS @ 25°
°°
°C
Bvces
Ices
θ
θθ
θjc1
Collector to Emitter Breakdown
Collector to Emitter Leakage
Thermal Resistance
Ic = 100 mA
Vce = 50 Volts
Rated Pulse Condition
75
10
0.29
Volts
mA
oC/W
1214-300V
300 Watts - 50 Volts, 330µs, 10%
Radar 1200 - 1400 MHz
1214-300V R1
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
Typical Performance Curves:
1214-300V
Pin vs. Pout
0
50
100
150
200
250
300
350
400
450
500
0 102030405060
Pin (W)
Pout (W)
1200 MHz
1300 MHz
1400 MHz
1214-300V
Pin vs. Eff
0.0
10.0
20.0
30.0
40.0
50.0
60.0
70.0
0 102030405060
Pin (W)
Eff (%)
1200 MHz
1300 MHz
1400 Mhz
1214-300V
Pin vs. Gain
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
0 102030405060
Pin (W)
Gain (dB)
1200 MHz
1300 MHz
1400 MHz
Impedance Information
Impedance
Freq Zs Zl
1200 1.28-j2 4.24-j9.03
1300 1.27-j1.41 2.1-j3.4
1400 1.29-j0.87 1.86-j2.56
1214-300V
Board Material RT 6010.2 LM 25 Mil
1214-300V R1
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
BROADBAND TEST CIRCUIT
1214-300V
1214-300V R1
MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT
VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT.
Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324
1214-300V
