Rev.0 Aug. 01, 2008 page 1 of 4
HL6545MG
Visible High Power Laser Diode for Recordable-DVD ODE2036-00 (M)
Rev.0
Aug. 01, 2008
Description
The HL6545MG is a 0.65 μm band AlGalnP laser diode (LD) with a multi-quantum well (MQW) structure. It is
suitable as a light source for large capacity optical disc memories, such as H/H type Recordable-DVD, and various
other types of opti cal equipment.
Features
• Operating temperature: 75°C Max
(300 mW(pulse), pw = 30 ns, duty = 35 %)
• Visible light output : λp = 660 nm Typ
• Low operating current:
Iop(1) = 175 mA Typ (Po = 120 mW)
Iop(2) = 350 mA Typ
(Po = 300 mW(pulse), pw = 30 ns, duty = 35 %)
LD
1
3
2
Internal CircuitPackage Type
• HL6545MG: MG
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Ratings Unit
Optical output power PO 130 mW
Pulse optical output power PO(pulse) 300 * mW
LD reverse voltage VR(LD) 2 V
CW Operating temperature Topr(CW) –10 to +75 °C
Pulse Operating temperature Topr(pulse) –10 to +75 °C
Storage temperature Tstg –40 to +85 °C
Note: Pulse condition : Pulse width = 30 ns , duty = 35 %
Optical and Electrical Characteristics
(TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Threshold current Ith — 60 75 mA —
Operating current(1) IOP(1) — 175 210 mA PO = 120 mW
Operating current(2) IOP(2) — 350 — mA PO = 300 mW(pulse)
pw = 30 ns, duty = 35 %
Operating voltage VOP — 2.5 3.0 V PO = 120 mW
Lasing wavelength λp 652 660 664 nm PO = 120 mW
Beam divergence
parallel to the junction(1) θ//(1) 7.5 10.0 12.0 deg. PO = 120 mW
Beam divergence
perpendicular to the junction θ⊥ 15 17 19 deg. PO = 120 mW
Beam divergence
parallel to the junction(2) θ//(2) 7.5 — — deg. PO = 5 mW
Astigmatism AS — 1 — μm PO = 5 mW, NA = 0.55
HL6545MG
Rev.0 Aug. 01, 2008 page 2 of 4
Typical Characteristic Curves
Slope efficiency, ηS (mW/mA)
Case temperature, TC (°C)
Slope Efficiency vs. Case Temperature
1.2
1.0
0.6
0.8
0.4
001020304050607080
Threshold current, Ith (mA)
Case temperature, TC (°C)
Threshold Current vs. Case Temperature
08070605040302010
100
10
0.2
50
020015010050
120
Optical output power, PO (mW)
0
Forward current, IF (mA)
Optical Output Power vs. Forward Current
0200100
300
200
Optical output power, PO(Pulse) (mW)
100
0
Forward current, IF (mA)
Pulse Optical Output Power vs. Forward Current
300
250 300 400 500
pw = 30ns
duty = 35%
80
40
TC = 25°C
TC = 75°C
TC = 25°C
TC = 0°C
TC = 75°C
Lasing Wavelength, λp (nm)
Case temperature, TC (°C)
Wavelength vs. Case Temperature
0604020
680
665
660
655
650
80
670
PO = 120mW
100
TC = 0°C
675
645
640
Relative intensity
Angle, θ ( ° )
Far Feild Pattern
–40 –100 102030–20–30 40
1.0
0.8
0.6
0.4
0.2
0
PO = 120mW
TC = 25°C
Perpendicular
Parallel
HL6545MG
Rev.0 Aug. 01, 2008 page 3 of 4
Package Dimensions
OPJ Code
JEDEC
JEITA
Mass
(reference value)
LD/MG
—
—
0.3 g
1
2
3
5.6
+0
–0.025
φ
1.0 ± 0.1
(0.4)
(90°)
1.6 ± 0.2
φ
0.4
+0.1
–0
φ
φ
4.1 ± 0.3
3.55 ± 0.1
0.25
Glass
1.27
φ
3 – 0.45 ± 0.1
6.5 ± 1.0
1.2 ± 0.1 2.3 ± 0.2
φ
123
2.0 ± 0.2
Emitting Point
As of July, 2002
Unit: mm
HL6545MG
Rev.0 Aug. 01, 2008 page 4 of 4
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, includin g intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten hum an life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no responsibility for failure or damage wh en used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to rep roduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Op
next Ja
p
an, Inc
.
Taka
g
i Bld
g
., 3F, 1-3-9, Iwamoto-cho, Chi
y
oda-ku, Tok
y
o 101-0032, Japan
Tel: (03) 3865-5591
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