2SB1201/2SD1801
No.2112-1/10
Applications
• Voltage regulators, relay drivers, lamp drivers, electrical equipment
Features
• Adoption of FBET, MBIT processes • Large current capacitance and wide ASO
• Low collector-to-emitter saturation voltage • Fast switching speed
• Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller
Specifi cations ( ): 2SB1201
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO (--)60 V
Collector-to-Emitter Voltage VCEO (--)50 V
Emitter-to-Base Voltage VEBO (--)6 V
Collector Current IC(--)2 A
Collector Current (Pulse) ICP (--)4 A
Continued on next page.
Package Dimensions unit : mm (typ) Package Dimensions
unit : mm (typ)
7518-003 7003-003
Ordering number : EN2112C
60612 TKIM TB-00000906, TA-4180/10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS
SANYO Semiconductors
DATA SHEET
2SB1201/2SD1801
PNP/NPN Epitaxial Planar Silicon Transistor
High-Current Switching
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : TP • Package : TP-FA
•
JEITA, JEDEC : S
C-64, TO-251 •
JEITA, JEDEC :
SC-63, TO-252
•
Minimum Packing Quantity
:
500 pcs./bag •
Minimum Packing Quantity
:
700 pcs./reel
Marking Packing Type (TP-FA) : TL Electrical Connection
(TP, TP-FA)
TL
6.5
5.0
2.3
0.5
12
4
3
0.85
0.7
1.2
0.6 0.5
2.3 2.3
7.07.5
1.6
0.8
5.5 1.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
6.5
5.0
2.3
0.5
12
4
3
0.85
0.6
0.5
1.2
1.2
2.3 2.3
7.0
2.5
5.5 1.5
0.8
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-F
A
2SB1201S-E
2SB1201T-E
2SD1801S-E
2SD1801T-E
2SB1201S-TL-E
2SB1201T-TL-E
2SD1801S-TL-E
2SD1801T-TL-E
B1201 D1801
LOT No.
RANK
LOT No.
RANK
2,4
3
1
2SD1801
2,4
3
1
2SB1201
2SB1201/2SD1801
No.2112-2/10
Continued from preceding page.
Parameter Symbol Conditions Ratings Unit
Collector Dissipation PC0.8 W
Tc=25°C15W
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Collector Cutoff Current ICBO VCB=(--)50V, IE=0A (--)100 nA
Emitter Cutoff Current IEBO VEB=(--)4V, IC=0A (--)100 nA
DC Current Gain hFE1V
CE=(--)2V, IC=(--)100mA 100* 560*
hFE2V
CE=(--)2V, IC=(--)1.5A 40
Gain-Bandwidth Product fTVCE=(--)10V, IC=(--)50mA 150 MHz
Output Capacitance Cob VCB=(--)10V, f=1MHz (22)12 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=(--)1A, IB=(--)50mA
(--0.3)0.15 (--0.7)0.4
V
Base-to-Emitter Saturation Voltage VBE(sat) VCE=(--)1A, IC=(--)50mA (--)0.9 (--)1.2 V
Collector-to-Base Breakdown Voltage V(BR)CBO IC=(--)10μA, IE=0A (--)60 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=(--)1mA, RBE=∞ (--)50 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=(--)10μA, IC=0A (--)6 V
Turn-On Time ton See specifi ed Test Circuit.
60
ns
Storage Time tstg
(450)550
ns
Fall Time tf30 ns
* : The 2SB1201/2SD1801 are classifi ed by 100mA hFE as follows :
Rank R S T U
hFE 100 to 200 140 to 280 200 to 400 280 to 560
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
2SB1201S-E TP 500pcs./bag
Pb Free
2SB1201T-E TP 500pcs./bag
2SD1801S-E TP 500pcs./bag
2SD1801T-E TP 500pcs./bag
2SB1201S-TL-E TP-FA 700pcs./reel
2SB1201T-TL-E TP-FA 700pcs./reel
2SD1801S-TL-E TP-FA 700pcs./reel
2SD1801T-TL-E TP-FA 700pcs./reel
VRRB
VCC=25VVBE= --5V
++
50Ω
INPUT RL
25Ω
OUTPUT
100μF 470μF
PW=20μsIB1
D.C.b1% IB2
IC=10IB1= --10IB2=500mA, VCC=25V
For PNP, the polarity is reversed.
2SB1201/2SD1801
No.2112-3/10
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- A
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VCE
Collector-to-Emitter Voltage, VCE -- V
Collector Current, IC -- mA
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
IC -- VBE
Base-to-Emitter Voltage, VBE -- V
Collector Current, IC -- A
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
hFE -- IC
Collector Current, IC -- A
DC Current Gain, hFE
--2.4
--1.6
--1.2
--0.8
--0.4
--2.0
00 --0.4 --0.8 --2.4--2.0--1.6--1.2
ITR09144 ITR09145
2.4
1.6
1.2
0.8
0.4
2.0
00 0.4 0.8 2.42.01.61.2
--50mA
--20mA
IB=0
--10mA
--2mA
--8mA
--6mA
--4mA
2SB1201
IB=0
2mA
15mA
25mA
40mA
50mA
4mA
8mA
2SD1801
0 --0.2 --0.4 --0.6 --0.8 --1.2--1.0
--1.6
--1.2
--2.4
--2.0
--0.8
--0.4
0
ITR09148
Ta=75°C
25°C
--25°C
2SB1201
VCE= --2V
ITR09149
2
3
5
7
7
1000
2
3
5
100
23 557 7 7
--0.01 --0.1 23523 --1.0ITR09150
2SB1201
VCE= --2V
Ta=75°C
25°C
--25°C
ITR09151
0 0.2 0.4 0.6 0.8 1.21.0
1.6
1.2
2.4
2.0
0.8
0.4
0
Ta=75°C
25
°
C
--25°C
2SD1801
VCE=2V
--1200
--800
--600
--400
--200
--1000
00 --2 --4 --12--10--8--6
IB=0
ITR09146
2SB1201
--7mA
--6mA
--5mA
--4mA
--3mA
--2mA
--1mA
ITR09147
1200
800
600
400
200
1000
0024 121086
2SD1801
IB=0
7mA
6mA
5mA
4mA
3mA
2mA
1mA
2
3
5
7
7
1000
2
3
5
100
23 557 7 7
0.01 0.1 23523 1.0
Ta=75°C
25°C
--25°C
2SD1801
VCE=2V
2SB1201/2SD1801
No.2112-4/10
VCE(sat) -- IC
Collector Current, IC -- A
VCE(sat) -- IC
Collector Current, IC -- A
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
fT -- IC
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
fT -- IC
Gain-Bandwidth Product, fT -- MHz
Collector Current, IC -- A
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
Cob -- VCB
Output Capacitance, Cob -- pF
Collector-to-Base Voltage, VCB -- V
VBE(sat) -- IC
Collector Current, IC -- A
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
VBE(sat) -- IC
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector Current, IC -- A
23
--100--10 23 523 57 7
--1000
1000
10
7
5
2
3
100
7
5
2
3
ITR09152
2SB1201
VCB=10V
23
10010 23 523 57 7
1000
1000
10
7
5
2
3
100
7
5
2
3
ITR09153
2SD1801
VCB=10V
5
7
7
3
2
5
3
--1.0
--10
57 7 7
--0.01 2323 523 5 --0.1 --1.0ITR09158
2SB1201
IC / IB=20
25°C
75°C
Ta= --25
°
C
5
7
7
3
2
5
3
1.0
10
57 7 7
0.01 2323 523 5 0.1 1.0
25°C
75°C
Ta= --25
°
C
ITR09159
2SD1801
IC / IB=20
--1.0 --10
7
3
5
7
5
100
10
2
2
2735 --100
2735
ITR09154
2
5
7
7
3
2
5
3
--1000
--10
--100
2357 7 75
--0.01 23 5 3
--0.1 2
--1.0ITR09156
2SB1201
IC / IB=20
25
°
C
Ta=75°C
--25
°
C
2
5
7
7
3
2
5
3
1000
10
100
2357 7 75
0.01 23 5 3
0.1 2
1.0 ITR09157
2SD1801
IC / IB=20
25
°
C
Ta=75°C
--25
°
C
2SB1201
f=1MHz
1.0 10
7
3
5
7
5
100
10
2
2735 100
2735
ITR09155
2SD1801
f=1MHz
2SB1201/2SD1801
No.2112-5/10
A S O
Collector Current, IC -- A
Collector-to-Emitter Voltage, VCE -- V
Collector Dissipation, PC -- W
Ambient Temperature, T a -- °C
PC -- Ta
1.0
0.1
0.01
5
3
2
5
3
5
7
7
3
2
2
1.0 10
2257733 100
2535
ITR09160
0
16
12
15
14
8
10
6
4
0.8
2
0 20 40 60 100 120 140 16080
ITR09161
2SB1201 / 2SD1801
100ms
10ms
1ms
DC operation Tc=25°C
DC operation Ta=25
°
C
Tc=25°C
Single pulse
For PNP, the minus sign is omitted.
No heat sink
Ideal heat dissipation
2SB1201 / 2SD1801
2SB1201/2SD1801
No.2112-6/10
Taping Specifi cation
2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E
2SB1201/2SD1801
No.2112-7/10
Outline Drawing Land Pattern Example
2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E
Mass (g) Unit
0.282
* For reference
mm Unit: mm
7.0
1.5
2.3
2.02.5
2.3
7.0
2SB1201/2SD1801
No.2112-8/10
Bag Packing Specifi cation
2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E
2SB1201/2SD1801
No.2112-9/10
Outline Drawing
2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E
Mass (g) Unit
0.315
* For reference
mm
2SB1201/2SD1801
No.2112-10/10PS
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
