2SB1201/2SD1801 Ordering number : EN2112C SANYO Semiconductors DATA SHEET 2SB1201/2SD1801 PNP/NPN Epitaxial Planar Silicon Transistor High-Current Switching Applications Applications * Voltage regulators, relay drivers, lamp drivers, electrical equipment Features * * * * Large current capacitance and wide ASO Adoption of FBET, MBIT processes * Fast switching speed Low collector-to-emitter saturation voltage Small and slim package making it easy to make 2SB1201/2SD1801-used sets smaller Specifications ( ): 2SB1201 Absolute Maximum Ratings at Ta=25C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit (--)60 V (--)50 V (--)6 V (--)2 A (--)4 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 1.5 5.5 4 0.5 1 2 2.3 0.8 1 7.5 0.8 1.6 0.6 1.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector 2.3 2 3 0 to 0.2 0.6 0.5 3 2.5 0.85 0.85 0.7 2SB1201S-TL-E 2SB1201T-TL-E 2SD1801S-TL-E 2SD1801T-TL-E 1.2 1.5 7.0 5.5 4 2.3 6.5 5.0 2SB1201S-E 2SB1201T-E 2SD1801S-E 2SD1801T-E 0.5 7.0 2.3 6.5 5.0 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA SANYO : TP Product & Package Information * Package : TP * JEITA, JEDEC : SC-64, TO-251 * Minimum Packing Quantity : 500 pcs./bag * Package : TP-FA * JEITA, JEDEC : SC-63, TO-252 * Minimum Packing Quantity : 700 pcs./reel Marking (TP, TP-FA) Packing Type (TP-FA) : TL Electrical Connection 2,4 B1201 RANK LOT No. 2,4 D1801 RANK 1 LOT No. 1 TL 2SB1201 3 2SD1801 3 http://semicon.sanyo.com/en/network 60612 TKIM TB-00000906, TA-4180/10904TN (KT)/92098HA (KT)/8259MO/4137KI/4076KI, TS No.2112-1/10 2SB1201/2SD1801 Continued from preceding page. Parameter Symbol Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Tc=25C Unit 0.8 W 15 W 150 C --55 to +150 C Electrical Characteristics at Ta=25C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE1 Emitter Cutoff Current DC Current Gain hFE2 Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time Ratings Conditions min typ VCB=(--)50V, IE=0A (--)100 nA VEB=(--)4V, IC=0A (--)100 nA VCE=(--)2V, IC=(--)100mA 100* VCE=(--)2V, IC=(--)1.5A VCE=(--)10V, IC=(--)50mA 40 560* 150 VCB=(--)10V, f=1MHz IC=(--)1A, IB=(--)50mA VCE(sat) VBE(sat) Unit max MHz (22)12 pF (--0.3)0.15 (--0.7)0.4 V (--)0.9 (--)1.2 V VCE=(--)1A, IC=(--)50mA IC=(--)10A, IE=0A (--)60 V IC=(--)1mA, RBE= (--)50 V V(BR)EBO ton IE=(--)10A, IC=0A (--)6 tstg tf See specified Test Circuit. V(BR)CBO V(BR)CEO V 60 ns (450)550 ns 30 ns * : The 2SB1201/2SD1801 are classified by 100mA hFE as follows : Rank R S T U hFE 100 to 200 140 to 280 200 to 400 280 to 560 Switching Time Test Circuit IB1 PW=20s D.C.b1% INPUT OUTPUT IB2 VR RB RL 25 50 + 100F VBE= --5V + 470F VCC=25V IC=10IB1= --10IB2=500mA, VCC=25V For PNP, the polarity is reversed. Ordering Information Package Shipping 2SB1201S-E Device TP 500pcs./bag 2SB1201T-E TP 500pcs./bag 2SD1801S-E TP 500pcs./bag 2SD1801T-E TP 500pcs./bag 2SB1201S-TL-E TP-FA 700pcs./reel 2SB1201T-TL-E TP-FA 700pcs./reel 2SD1801S-TL-E TP-FA 700pcs./reel 2SD1801T-TL-E TP-FA 700pcs./reel memo Pb Free No.2112-2/10 2SB1201/2SD1801 IC -- VCE --2.4 Collector Current, IC -- A --5 0m A Collector Current, IC -- A --20 --10mA --1.2 --8mA --6mA --0.8 --4mA --2mA --0.4 --0.4 --0.8 --1.2 --1.6 --2.0 Collector-to-Emitter Voltage, VCE -- V --2mA --1mA --200 0 0.8 4mA 2mA IB=0 0 IB=0 0 --2 --4 --6 --8 --10 2.0 2.4 ITR09145 2SD1801 5mA 4mA 3mA 600 2mA 400 1mA IB=0 0 2 4 6 8 10 12 Collector-to-Emitter Voltage, VCE -- V ITR09147 IC -- VBE IC -- VBE 2.4 2SB1201 VCE= --2V 2SD1801 VCE=2V --1.6 --1.2 --0.8 --0.4 0 --0.2 --0.4 --0.6 1.2 0.8 0.4 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V hFE -- IC 1000 1.6 Ta= 7 25 5C C --25 C Collector Current, IC -- A 2.0 Ta= 75 25C C --25 C Collector Current, IC -- A 1.6 7mA 6mA 800 0 --12 --2.0 0 --1.2 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V ITR09148 2SD1801 VCE=2V 7 5 Ta=75C 3 2 DC Current Gain, hFE 5 1.2 ITR09149 hFE -- IC 1000 2SB1201 VCE= --2V 7 DC Current Gain, hFE 1.2 200 --2.4 25C --25C 100 7 3 100 7 5 3 3 5 7 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 ITR09150 Ta=75C 25C --25C 2 5 2 0.8 IC -- VCE Collector-to-Emitter Voltage, VCE -- V ITR09146 0 0.4 Collector-to-Emitter Voltage, VCE -- V Collector Current, IC -- mA Collector Current, IC -- mA --3mA --400 8mA 1000 --4mA --600 1.2 1200 --5mA --800 15mA ITR09144 2SB1201 --7mA --6mA --1000 1.6 0 --2.4 IC -- VCE --1200 25mA 0.4 IB=0 0 0mA 4 2.0 mA --1.6 2SD1801 A 50m --2.0 0 IC -- VCE 2.4 2SB1201 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR09151 No.2112-3/10 2SB1201/2SD1801 f T -- IC 1000 5 3 2 100 7 5 3 2 10 --10 2 3 5 7 --100 2 3 5 7 --1000 2 Collector Current, IC -- A 5 3 2 2 3 5 7 100 2 3 5 7 1000 3 2 10 2 3 ITR09153 Cob -- VCB 2SD1801 f=1MHz 7 Output Capacitance, Cob -- pF Output Capacitance, Cob -- pF 7 100 5 5 3 2 10 7 5 --1.0 2 3 5 7 2 --10 3 5 Collector-to-Base Voltage, VCB -- V VCE(sat) -- IC --1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 5 3 2 --100 7 25 5 C C 75 Ta= C --25 3 2 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A VBE(sat) -- IC --10 2 25C 7 75C 5 5 7 --0.01 2 3 5 7 --0.1 2 3 5 Collector Current, IC -- A 7 --1.0 2 7 2 10 3 3 ITR09158 5 7 100 ITR09155 VCE(sat) -- IC 5 3 2 100 7 5 25 3 C C Ta=75 2 --25 5 7 0.01 2 3 5 C 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 ITR09157 VBE(sat) -- IC 2SD1801 IC / IB=20 7 3 Ta= --25C 5 10 5 --1.0 3 2SD1801 IC / IB=20 7 10 7 --1.0 2 3 ITR09156 2SB1201 IC / IB=20 7 2 Collector-to-Base Voltage, VCB -- V 1000 2SB1201 IC / IB=20 7 5 1.0 7 --100 ITR09154 Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 100 Collector Current, IC -- A 7 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2 10 2SB1201 f=1MHz 7 3 3 10 3 100 --10 5 ITR09152 Cob -- VCB 2 2SD1801 VCB=10V 7 Gain-Bandwidth Product, f T -- MHz Gain-Bandwidth Product, f T -- MHz 7 f T -- IC 1000 2SB1201 VCB=10V 5 3 2 1.0 25C Ta= --25C 7 75C 5 3 5 7 0.01 2 3 5 7 0.1 2 3 5 Collector Current, IC -- A 7 1.0 2 3 ITR09159 No.2112-4/10 2SB1201/2SD1801 ASO 5 tio C 25 nT a= 25 C 0.1 7 5 ms op era 2 10 0 3 c= nT tio DC era op Collector Current, IC -- A s 10m DC 1.0 7 5 2SB1201 / 2SD1801 Tc=25C Single pulse For PNP, the minus sign is omitted. 3 2 2 3 5 1.0 2 3 5 7 10 Collector Dissipation, PC -- W 14 2 0.01 2SB1201 / 2SD1801 15 s 3 PC -- Ta 16 1m 12 Id ea lh 10 ea td iss 8 ip 2 3 5 7 100 ITR09160 io 6 n 4 2 Collector-to-Emitter Voltage, VCE -- V at 0.8 0 No heat sink 0 20 40 60 80 100 120 Ambient Temperature, Ta -- C 140 160 ITR09161 No.2112-5/10 2SB1201/2SD1801 Taping Specification 2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E No.2112-6/10 2SB1201/2SD1801 Outline Drawing Land Pattern Example 2SB1201S-TL-E, 2SB1201T-TL-E, 2SD1801S-TL-E, 2SD1801T-TL-E Mass (g) Unit 0.282 mm * For reference Unit: mm 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2112-7/10 2SB1201/2SD1801 Bag Packing Specification 2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E No.2112-8/10 2SB1201/2SD1801 Outline Drawing 2SB1201S-E, 2SB1201T-E, 2SD1801S-E, 2SD1801T-E Mass (g) Unit 0.315 mm * For reference No.2112-9/10 2SB1201/2SD1801 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of June, 2012. Specifications and information herein are subject to change without notice. PS No.2112-10/10