MAXIMUM RATINGS: (TA=25°C)
SYMBOL UNITS
Continuous Reverse Voltage VR30 V
Continuous Forward Current IF200 mA
Peak Repetitive Forward Current IFRM 300 mA
Forward Surge Current, tp=10ms IFSM 600 mA
Power Dissipation PD350 mW
Operating and Storage
Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance ΘJA 357 °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS MAX UNITS
IRVR=25V 2.0 µA
VFIF=0.1mA 240 mV
VFIF=1.0mA 320 mV
VFIF=10mA 400 mV
VFIF=30mA 500 mV
VFIF=100mA 800 mV
CdVR=1.0V, f=1.0 MHz 10 pF
trr IF=IR=10mA, Irr=1.0mA, RL=100Ω5.0 ns
CBAT54
CBAT54A
CBAT54C
CBAT54S
SURFACE MOUNT
SILICON SCHOTTKY DIODES
SOT-23 CASE
Central
Semiconductor Corp.
TM
R0 (13-January 2005)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBAT54
Series types are Silicon Schottky Diodes in an
SOT-23 Surface Mount Package.
CBAT54: SINGLE MARKING CODE: CL4
CBAT54A: DUAL, COMMON ANODE MARKING CODE: CL42
CBAT54C: DUAL, COMMON CATHODE MARKING CODE: CL43
CBAT54S: DUAL, IN SERIES MARKING CODE: CL44
Central
Semiconductor Corp.
TM CBAT54
CBAT54A
CBAT54C
CBAT54S
SURFACE MOUNT
SILICON SCHOTTKY DIODES
R0 (13-January 2005)
SOT-23 CASE - MECHANICAL OUTLINE
MARKING
CODE: CL43
MARKING
CODE: CL44
MARKING
CODE: CL4
MARKING
CODE: CL42
CBAT54 CBAT54A CBAT54C CBAT54S
1) Anode 1) Cathode D2 1) Anode D2 1) Anode D2
2) No Connection 2) Cathode D1 2) Anode D1 2) Cathode D1
3) Cathode 3) Anode D1, Anode D2 3) Cathode D1, Cathode D2 3) Anode D1, Cathode D2
2
3
1
D1 D2
2
3
1
D1 D2
2
3
1
D1 D2
2
3
1
LEAD CODE: LEAD CODE: LEAD CODE:
LEAD CODE: