VUB120-16NOXT 3~ Rectifier Standard Rectifier Module Brake Chopper VRRM = 1600 V VCES = 1200 V I DAV = 180 A I C25 = 180 A I FSM = 1100 A VCE(sat) = 1.7 V 3~ Rectifier Bridge + Brake Unit + NTC Part number VUB120-16NOXT Backside: isolated M1/O1 W5 W6 S1 NTC U1/ W1 ~A6 ~E6 ~K6 M10/O10 W U S/T 10 10 10 Features / Advantages: Applications: Package: V2-Pack Package with DCB ceramic base plate Improved temperature and power cycling Planar passivated chips Very low forward voltage drop Very low leakage current NTC X2PT - 2nd generation Xtreme light Punch Through Rugged X2PT design results in: - short circuit rated for 10 sec. - very low gate charge - low EMI - square RBSOA @ 2x Ic Thin wafer technology combined with X2PT design results in a competitive low VCE(sat) and low thermal resistance 3~ Rectifier with brake unit for drive inverters Isolation Voltage: 3600 V~ Industry standard outline RoHS compliant Soldering pins for PCB mounting Height: 17 mm Base plate: DCB ceramic Reduced weight Advanced power cycling Terms and Conditions of Usage The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20170405g VUB120-16NOXT Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C VRRM max. repetitive reverse blocking voltage TVJ = 25C 1600 IR reverse current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25C 100 A TVJ = 125C 2 mA IF = TVJ = 25C 1.16 V 1.55 V 1.09 V IF = 60 A TVJ = 125 C 60 A I F = 180 A bridge output current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 90 C rectangular R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current It CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 1.59 V T VJ = 150 C 180 A TVJ = 150 C 0.81 V 4.4 m d= for power loss calculation only Ptot V VR = 1600 V I F = 180 A I DAV max. Unit 1700 V 0.6 K/W 0.2 K/W TC = 25C 205 W t = 10 ms; (50 Hz), sine TVJ = 45C 1.10 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 1.19 kA t = 10 ms; (50 Hz), sine TVJ = 150 C 935 A t = 8,3 ms; (60 Hz), sine VR = 0 V 1.01 kA t = 10 ms; (50 Hz), sine TVJ = 45C 6.05 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V 5.89 kAs t = 10 ms; (50 Hz), sine TVJ = 150 C 4.37 kAs t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25C 4.25 kAs 37 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20170405g VUB120-16NOXT Ratings Brake IGBT + Diode Symbol VCES Definition Conditions min. VGES max. DC gate voltage 20 V VGEM max. transient gate emitter voltage 30 V I C25 collector current TC = 25C 180 A TC = 80 C 140 A 500 W 2.1 V TVJ = collector emitter voltage I C80 Ptot total power dissipation VCE(sat) collector emitter saturation voltage VGE(th) gate emitter threshold voltage I C = 4 mA; VGE = V CE TVJ = 25C I CES collector emitter leakage current VCE = VCES ; V GE = 0 V TVJ = 25C I GES gate emitter leakage current VGE = 20 V Q G(on) total gate charge VCE = 600 V; VGE = 15 V; I C =100 A t d(on) turn-on delay time TC = 25C I C = 100 A; V GE = 15 V TVJ = 25C 1.7 TVJ = 125C 1.9 TVJ = 125C tr current rise time t d(off) turn-off delay time tf current fall time Eon turn-on energy per pulse Eoff turn-off energy per pulse RBSOA reverse bias safe operating area typ. 25C inductive load 6.8 TVJ = 125C VGE = 15 V; R G = 6.8 SCSOA short circuit safe operating area t SC short circuit duration VCEK = 1200 V VCE = 720 V; VGE = 15 V I SC short circuit current RG = 6.8 ; non-repetitive R thJC thermal resistance junction to case R thCH thermal resistance case to heatsink 7.5 V 0.1 mA 0.1 mA nA 340 nC 230 ns 70 ns 380 ns 230 ns 12.5 mJ 11.5 mJ TVJ = 125C VCEK = 1200 V I CM V 500 VCE = 600 V; IC = 100 A VGE = 15 V; R G = 6.8 6 max. Unit 1200 V TVJ = 125C 300 A 10 s A 450 0.25 K/W K/W 0.10 Brake Diode VRRM max. repetitive reverse voltage TVJ = 25C 1200 V I F25 forward current TC = 25C 48 A TC = 80 C 32 A TVJ = 25C 2.75 V TVJ = 25C 0.25 mA TVJ = 125C 1 mA I F80 VF forward voltage I F = 30 A IR reverse current VR = VRRM Q rr reverse recovery charge VR = I RM max. reverse recovery current -di F /dt = 1000 A/s trr reverse recovery time IF = 30 A E rec reverse recovery energy R thJC thermal resistance junction to case RthCH thermal resistance case to heatsink TVJ = 125C IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved 600 V TVJ = 125C 1.60 V 5.2 C 50 A 300 ns 1.9 mJ 0.9 K/W 0.3 Data according to IEC 60747and per semiconductor unless otherwise specified K/W 20170405g VUB120-16NOXT Package Ratings V2-Pack Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 max. 100 Unit A -40 150 C -40 125 C 125 C 76 Weight MD 2 mounting torque d Spp/App creepage distance on surface | striking distance through air d Spb/Apb VISOL typ. t = 1 minute 2.5 Nm terminal to terminal 6.0 mm terminal to backside 12.0 mm 3600 V 3000 V t = 1 second isolation voltage g 50/60 Hz, RMS; IISOL 1 mA Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) yywwAA Part Number Lot.No: xxxxxx UL Date code Prod. Index Ordering Standard Ordering Number VUB120-16NOXT Marking on Product VUB120-16NOXT Similar Part VUB120-16NOX Package V2-Pack Delivery Mode Box Quantity 6 Code No. 520468 Voltage class 1600 105 Temperature Sensor NTC Symbol Definition Conditions R25 resistance TVJ = 25 B25/50 temperature coefficient min. 4.75 typ. 5 3375 max. Unit 5.25 k K 104 R [ ] 103 Equivalent Circuits for Simulation I V0 R0 * on die level Rectifier Brake Diode V 0 max threshold voltage 0.81 1.31 R0 max slope resistance * 3.2 8 IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved T VJ = 150 C 102 0 V m 25 50 75 100 TC [C] 125 150 Typ. NTC resistance vs. temperature Data according to IEC 60747and per semiconductor unless otherwise specified 20170405g VUB120-16NOXT Outlines V2-Pack Marking Remarks: EJOT PT(R) self-tapping screws of the dimension K25 are recommended for the mechanical connection between module and PCB. Choose the right length according to your board thickness at a maximum depth of 6 mm of the module holes. The recommended mounting torque is 1.5 Nm. M1/O1 W5 W6 S1 NTC U1/ W1 ~A6 ~E6 ~K6 M10/O10 IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved W U S/T 10 10 10 Data according to IEC 60747and per semiconductor unless otherwise specified 20170405g VUB120-16NOXT Rectifier 200 10 4 900 TVJ = 125C TVJ = 25C 800 IF IFSM TVJ= 45C TVJ = 45C 150 2 700 It 600 [A s] TVJ= 150C 100 [A] [A] 2 50 TVJ = 150C 500 0 0.0 50Hz, 80% VRRM 0.5 1.0 1.5 400 0.001 2.0 0.01 VF [V] 0.1 10 3 1 1 2 t [s] Fig. 1 Forward current vs. voltage drop per diode 3 4 5 6 7 8 910 t [ms] 2 Fig. 2 Surge overload current vs. time per diode Fig. 3 I t vs. time per diode 140 RthA: 0.1 K/W 0.3 K/W 0.6 K/W 1.0 K/W 1.5 K/W 2.5 K/W DC = 1 0.5 0.4 0.33 0.17 0.08 80 60 Ptot 40 DC = 1 0.5 0.4 0.33 0.17 0.08 120 100 IdAV 80 [A] 60 [W] 40 20 20 0 0 0 10 20 30 40 50 60 70 0 20 40 IF(AV)M [A] 60 80 100 120 140 160 0 25 50 Tamb [C] 75 100 125 150 TC [C] Fig. 4 Power dissipation vs. forward current and ambient temperature per diode Fig. 5 Max. forward current vs. case temperature per diode 0.6 0.5 Constants for ZthJC calculation: 0.4 ZthJC 0.3 [K/W] 0.2 0.1 0.0 1 10 100 1000 i Rth (K/W) ti (s) 1 0.040 0.004 2 0.003 0.010 3 0.140 0.030 4 0.120 0.300 5 0.197 0.080 10000 t [s] Fig. 6 Transient thermal impedance junction to case vs. time per diode IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20170405g VUB120-16NOXT Brake IGBT + Diode 200 200 150 13 V VCE = 20 V 150 150 25C IC 200 VGE = 19 V 17 V 15 V IC 125C 100 11 V TVJ = 150C IC 100 100 [A] [A] [A] 125C 50 50 50 25C 9V 0 0.0 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 VCE [V] 400 RG = 6.8 Ohm VCE = 600 V VGE = 15 V TVJ = 125C 30 3 6 4 7 RG = 6.8 Ohm VCE = 600 V VGE = 15 V TVJ = 125C 40 300 td(on) Eon tr 20 200 [mJ] [ns] 10 11 12 13 Eoff 60 500 50 400 t t d(off) 30 40 300 [mJ] [ns] tf 20 200 IF 30 [A] 125C 20 tr 10 9 Fig. 3 Typ. transfer charact. IGBT Fig.2 Typ. output characteristics IGBT 50 8 VGE [V] VCE [V] Fig.1 Output characteristics IGBT 40 2 100 10 100 10 25C Eon 0 0 0 50 100 150 0 200 0 IC [A] Fig. 4 Typ. turn-on energy & switch. times vs. collector current 8 80 RG = 6.8 Ohm VR = 600 V TVJ = 125C I rr 6 Eoff Erec Irr 4 40 [A] [mJ] 100 150 200 IC [A] Fig. 5 Typ. turn-off energy & switch. times vs. collector current 2.5 2.0 60 Erec 0 10 20 30 40 50 0 60 1.5 2.0 2.5 1 100 Erec IGBT 1.5 75 [mJ] ZthJC Irr 1.0 50 0.1 [K/W] [A] 20 Erec 1.0 Diode 0.5 0 0.5 VF [V] Fig. 6 Typ. forward characteristics Diode 125 TVJ = 125C VR = 600 V IF = 30 A Irr 2 0 0.0 0 50 25 0.0 4 8 12 16 20 0 24 0.01 0.001 IGBT Ri ti 0.050 0.0010 0.035 0.0100 0.120 0.0300 0.045 0.0800 0.01 Diode Ri ti 0.365 0.0050 0.180 0.0003 0.255 0.0397 0.100 0.1000 0.1 1 IF [A] RG [Ohm] t [s] Fig. 7 Typ. reverse recovery characteristics Diode Fig. 8 Typ. reverse recovery characteristics Diode Fig. 9 Transient thermal resistance junction to case IXYS reserves the right to change limits, conditions and dimensions. (c) 2017 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20170405g Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: IXYS: VUB120-16NOXT