ST780C..L Series
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Bulletin I25192 rev. C 04/00
ELECTRICAL SPECIFICATIONS
Voltage Ratings
Voltage VDRM/VRRM, max. repetitive VRSM , maximum non- IDRM/IRRM max.
Type number Code peak and off-state voltage repetitive peak voltage @ TJ = TJ max
VVmA
04 400 500
06 600 700
IT(AV) Max. average on-state current 1350 (500) A 180° conduction, half sine wave
@ Heatsink temperature 55 (85) °C double side (single side) cooled
IT(RMS) Max. RMS on-state current 2700 DC @ 25°C heatsink temperature double side cooled
ITSM Max. peak, one-cycle 24400 t = 10ms No voltage
non-repetitive surge current 25600 A t = 8.3ms reapplied
20550 t = 10ms 100% VRRM
21500 t = 8.3ms reapplied Sinusoidal half wave,
I2t Maximum I2t for fusing 2986 t = 10ms No voltage Initial TJ = TJ max.
2726 t = 8.3ms reapplied
2112 t = 10ms 100% VRRM
1928 t = 8.3ms reapplied
I2√t Maximum I2√t for fusing 29860 KA2√s t = 0.1 to 10ms, no voltage reapplied
VT(TO)1Low level value of threshold
voltage
VT(TO)2High level value of threshold
voltage
rt1 Low level value of on-state
slope resistance
rt2 High level value of on-state
slope resistance
VTM Max. on-state voltage 1.31 V Ipk= 3600A, TJ = TJ max, tp = 10ms sine pulse
IHMaximum holding current 600
ILTypical latching current 1000
0.80 (16.7% x π x IT(AV) < I < π x IT(AV)), TJ = TJ max.
0.14 (16.7% x π x IT(AV) < I < π x IT(AV)), T J = TJ max.
0.13 (I > π x IT(AV)),TJ = TJ max.
Parameter ST780C..L Units Conditions
0.90 (I > π x IT(AV)),TJ = TJ max.
On-state Conduction
KA2s
V
mΩ
mA TJ = 25°C, anode supply 12V resistive load
di/dt Max. non-repetitive rate of rise Gate drive 20V, 20Ω, tr ≤ 1µs
of turned-on current TJ = TJ max, anode voltage ≤ 80% VDRM
Gate current 1A, dig/dt = 1A/µs
Vd = 0.67% VDRM, TJ = 25°C
ITM = 750A, TJ = TJ max, di/dt = 60A/µs, VR = 50V
dv/dt = 20V/µs, Gate 0V 100Ω, tp = 500µs
Parameter ST780C..L Units Conditions
Switching
1000 A/µs
tdTypical delay time 1.0
tqTypical turn-off time 150
µs
ST780C..L 80