Document Number: 93174 For technical questions, contact: ind-modules@vishay.com www.vishay.com
Revision: 04-Aug-08 1
Fast Recovery Diodes
(Hockey PUK Version), 350 A
SD303C..C Series
Vishay High Power Products
FEATURES
• High power FAST recovery diode series
• 1.0 to 2.0 µs recovery time
• High voltage ratings up to 2500 V
• High current capability
• Optimized turn-on and turn-off characteristics
• Low forward recovery
• Fast and soft reverse recovery
• Press PUK encapsulation
• Case style conform to JEDEC DO-200AA
• Maximum junction temperature 125 °C
• Lead (Pb)-free
TYPICAL APPLICATIONS
• Snubber diode for GTO
• High voltage freewheeling diode
• Fast recovery rectifier applications
PRODUCT SUMMARY
IF(AV) 350 A
DO-200AA
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
IF(AV)
350 A
Ths 55 °C
IF(RMS)
550 A
Ths 25 °C
IFSM
50 Hz 5770
A
60 Hz 6040
I2t
50 Hz 166
kA2s
60 Hz 152
VRRM Range 400 to 2500 V
trr
1.0 to 2.0 µs
TJ25
°C
TJ- 40 to 125
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2Revision: 04-Aug-08
SD303C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 350 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER VOLTAGE
CODE
VRRM, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
VRSM, MAXIMUM NON-REPETITIVE
PEAK REVERSE VOLTAGE
V
IRRM MAXIMUM
AT TJ = 125 °C
mA
SD303C..S10C
04 400 500
35
08 800 900
10 1000 1100
SD303C..S15C
12 1200 1300
14 1400 1500
16 1600 1700
SD303C..S20C 20 2000 2100
25 2500 2600
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at heatsink temperature IF(AV)
180° conduction, half sine wave
Double side (single side) cooled
350 (175) A
55 (75) °C
Maximum RMS current IF(RMS) 25 °C heatsink temperature double side cooled 550
A
Maximum peak, one-cycle ,
non-repetitive forward current IFSM
t = 10 ms No voltage
reapplied
Sinusoidal half wave,
initial TJ = TJ maximum
5770
t = 8.3 ms 6040
t = 10 ms 100 % VRRM
reapplied
4850
t = 8.3 ms 5080
Maximum I2t for fusing I2t
t = 10 ms No voltage
reapplied
166
kA2s
t = 8.3 ms 152
t = 10 ms 100 % VRRM
reapplied
117
t = 8.3 ms 107
Maximum I2√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1660 kA2√s
Low level value of threshold voltage VF(TO)1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.14 V
High level value of threshold voltage VF(TO)2 (I > π x IF(AV)), TJ = TJ maximum 1.63
Low level of forward slope resistance rf1 (16.7 % x π x IF(AV) < I < π x IF(AV)), TJ = TJ maximum 1.14 mΩ
High level of forward slope resistance rf2 (I > π x IF(AV)), TJ = TJ maximum 0.77
Maximum forward voltage drop VFM Ipk = 1100 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 2.26 V
RECOVERY CHARACTERISTICS
CODE
MAXIMUM VALUE
AT TJ = 25 °C TEST CONDITIONS TYPICAL VALUES
AT TJ = 125 °C
trr AT 25 % IRRM
(µs)
Ipk
SQUARE
PULSE
(A)
dI/dt
(A/µs)
Vr
(V)
trr AT 25 % IRRM
(µs)
Qrr
(µC)
Irr
(A)
S10 1.0
750 25 - 30
2.4 52 33
S15 1.5 2.9 90 44
S20 2.0 3.2 107 46
IFM trr
dir
dt
IRM(REC)
Qrr
t
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Revision: 04-Aug-08 3
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A Vishay High Power Products
Note
• The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating temperature range TJ- 40 to 125
°C
Maximum storage temperature range TStg - 40 to 150
Maximum thermal resistance,
junction to heatsink RthJ-hs
DC operation single side cooled 0.16
K/W
DC operation double side cooled 0.08
Mounting force, ± 10 % 4900 (500) N (kg)
Approximate weight 70 g
Case style See dimensions - link at the end of datasheet DO-200AA
ΔRthJ-hs CONDUCTION
CONDUCTION ANGLE
SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION
TEST CONDITIONS UNITS
SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE
180° 0.010 0.011 0.008 0.008
TJ = TJ maximum K/W
120° 0.012 0.013 0.013 0.013
90° 0.016 0.016 0.018 0.018
60° 0.024 0.024 0.025 0.025
30° 0.042 0.042 0.042 0.042
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4Revision: 04-Aug-08
SD303C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 350 A
Fig. 1 - Current Ratings Characteristics
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
Fig. 5 - Forward Power Loss Characteristics
Fig. 6 - Forward Power Loss Characteristics
60
70
80
90
100
110
120
130
0 20 40 60 80 100 120 140 160 180
30°
60° 90°
120°
180°
Averag e Forw ard Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD303C..C Series
(Single Side Cooled)
R (D C ) = 0.1 6 K /W
th J-hs
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300
30°
60°
90°
180° DC
120°
Average Forward Current (A)
Maxim um Allow able Heatsink Temperature (°C)
SD 303C ..C Series
(Single Side C oole d)
R ( D C ) = 0 . 16 K /W
thJ-hs
Conduction Period
40
50
60
70
80
90
100
110
120
130
0 50 100 150 200 250 300 350 400
30° 60° 90° 120°
180°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Angle
SD303C..C Series
(Double Side Cooled)
R (D C ) = 0 .08 K/W
thJ-h s
40
50
60
70
80
90
100
110
120
130
0 100 200 300 400 500 600
30° 60°
90°
180° DC
120°
Average Forward Current (A)
Maximum Allowable Heatsink Temperature (°C)
Conduction Period
SD303C..C Series
(D ouble Side Cooled)
R (DC) = 0.08 K/W
th J- hs
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400
180°
120°
90°
60°
30°
Average Forward Current (A)
Maximum Average Forward Power Loss (W)
RMS Limit
Conduction Angle
SD 3 03C ..C Se rie s
T = 125°C
J
0
100
200
300
400
500
600
700
800
900
1000
0100200300400500600
DC
180°
120°
90°
60°
30°
Average Forward Current (A)
RMS Lim it
Maximum Average Forward Power Loss (W )
Conduction Period
SD 303 C..C Se rie s
T = 125°C
J
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Revision: 04-Aug-08 5
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A Vishay High Power Products
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 9 - Forward Voltage Drop Characteristics
Fig. 10 - Thermal Impedance ZthJ-hs Characteristic
Fig. 11 - Typical Forward Recovery Characteristics
200 0
250 0
300 0
350 0
400 0
450 0
500 0
550 0
001011
N um b e r O f E q ua l Am p litude H a lf C yc le C u r r en t Puls es (N )
Peak Half Sine W ave Forward Current (A)
Initial T = 12 5°C
@ 60 Hz 0.0 083 s
@ 50 Hz 0.0 100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
SD 30 3C ..C Series
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
0.01 0.1 1
Pulse Train Duration (s)
Peak Half Sine Wave Forward Current (A)
Initial T = 125 °C
N o V o lt a g e R e a p p lie d
Ra te d V Reapp lie d
RRM
J
V e r su s P u ls e T r a in D u ra t io n .
M a x im um N on Re p etitive S urg e C urrent
SD303C..C Series
10
100
1000
10000
01 23 45678
Instanta neo us Fo rw a rd C urre nt (A )
Instantaneous Forward Voltage (V)
T = 25 °C
T = 125 ° C
J
J
SD 303C ..C Series
0.001
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100
Squ a re W a ve Pulse D ur atio n (s)
thJ-hs
Tran sient Therm al Impedance Z (K/W)
Stea dy State V alue
R = 0.1 6 K /W
(Sin gle Side C ooled)
R = 0.0 8 K /W
(D ouble Side C ooled)
(D C Ope ration )
thJ-hs
thJ-h s
SD 303 C ..C Se rie s
0
20
40
60
80
100
120
0 200 400 600 800 1000 1200 1400 1600 1800 2000
Forward Recovery (V)
Rate O ff Fa ll O f F orw a rd C u rrent d i/d t (A/use c)
T = 125°C
T = 25°C
J
J
SD 303C ..S20C Series
I
V
FP
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6Revision: 04-Aug-08
SD303C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 350 A
Fig. 12 - Recovery Time Characteristics
Fig. 13 - Recovery Charge Characteristics
Fig. 14 - Recovery Current Characteristics
Fig. 15 - Recovery Time Characteristics
Fig. 16 - Recovery Charge Characteristics
Fig. 17 - Recovery Current Characteristics
1.6
1.8
2
2.2
2.4
2.6
2.8
00101
Rate Of Fall Of Forward Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD 303C ..S1 0C Series
T = 125 °C, V = 30V
J
r
10
20
30
40
50
60
70
80
90
100
110
120
130
140
0 20406080100
Maximum Reverse Recovery Charge - Qrr (µC)
Ra te O f Fall Of Fo rward Cu rrent - d i/dt (A/µs)
400 A
200 A
I = 750 A
Sq u a re Puls e
FM
SD303C..S10C Series
T = 125 °C , V = 3 0V
J
r
20
30
40
50
60
70
80
90
100
20 30 40 5 0 60 70 80 90 100
M axim um Rev erse Re cov ery C urren t - Irr (A )
Rate Of Fall Of Forwa rd Curren t - di/d t (A/µs)
400 A
200 A
I = 75 0 A
Square Pulse
FM
SD 303C..S10C Serie s
T = 1 25 °C , V = 3 0 V
r
J
1.6
2
2.4
2.8
3.2
3.6
00101
Rate Of Fa ll Of Forward Current - di/dt (A/µs)
M aximum Reverse Re covery Time - Trr (µs)
400 A
200 A
I = 75 0 A
Sq u a re P ulse
FM
SD303C..S15C Series
T = 125 °C, V = 30V
r
J
50
60
70
80
90
100
110
120
130
140
150
160
170
10 20 30 40 50 60 70 80 90 100
M axim um Reverse Recovery Charge - Qrr (µC)
Ra te O f Fa ll O f Forw ard Current - di /d t (A /µs )
400 A
200 A
I = 750 A
Sq u a re Pulse
FM
SD303C..S15C Series
T = 125 °C, V = 30V
J
r
10
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M axim um Rev erse Re cov ery C urre n t - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 7 50 A
Sq u a re Pu ls e
FM
SD 3 03C ..S15 C Se rie s
T = 12 5 °C, V = 30V
J
r
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Revision: 04-Aug-08 7
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A Vishay High Power Products
Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics
Fig. 20 - Recovery Current Characteristics
Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics
2.4
2.6
2.8
3
3.2
3.4
3.6
00101
Rate Of Fall Of Fo rwa rd Current - di/dt (A/µs)
Maximum Reverse Recovery Time - Trr (µs)
400 A
200 A
I = 750 A
Square Pulse
FM
SD303C..S20C Series
T = 125 °C, V = 30V
J
r
50
100
150
200
250
300
10 20 30 40 50 60 70 80 90 100
Maximum Reverse Recovery Charge - Qrr (µC )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq ua re Pulse
FM
SD 3 03C ..S2 0C Se rie s
T = 1 2 5 ° C , V = 3 0 V
J
r
20
30
40
50
60
70
80
90
100
110
120
130
10 20 30 40 50 60 70 80 90 100
M a xim um R eve rse Rec o very C urrent - Irr (A )
Rate Of Fall Of Forward Current - di/dt (A/µs)
400 A
200 A
I = 750 A
Sq uare Pulse
FM
SD 303C ..S20C Serie s
T = 125 °C, V = 30V
J
r
1E1
1E2
1E3
1E4
1E1 1E2 1E3 1E4
12
0.1
Pulse Basewidth (µs)
Pea k Forward Current (A)
4
dv/d t = 1000V/µs
Sinusoida l Pulse
20 joules per pulse
10
0.4
0.2
0.04
0.02
0.01
SD303C..S10C S eries
T = 125°C , V = 1120V
J
RR M
tp
1E1 1E2 1E3 1E4
12
0.1
Pulse Basewidth (µs)
4
20 jou les p er pulse
10
0.4
0.2
Tr apezo id al Pul se
dv/dt = 1000V/µs; di/dt=50A/µs
SD303C..S10C Series
T = 125°C, V = 1120V
J
RRM
tp
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8Revision: 04-Aug-08
SD303C..C Series
Vishay High Power Products Fast Recovery Diodes
(Hockey PUK Version), 350 A
Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics
Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics
1E1
1E2
1E3
1E4
1E1 1E2 1E 3 1E4
1
2
0.1
Pulse B asew id th (µs)
Peak Forward Current (A)
4
dv/dt = 1000V/µs
Sinusoidal P ulse
20 joules per p ulse
10
0.4
0.2
0.04
0.02
SD303C..S15C Series
T = 125°C, V = 1760V
J
RRM
tp
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
4
20 jo ules per p ulse
10
0.4
0.2
Trapezoidal Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
T = 125°C, V = 1760V
J
RRM
SD303C..S15C Series
tp
1E1
1E2
1E3
1E4
1E1 1E2 1 E3 1E4
1
2
0.1
Pulse B asew idth (µ s)
Peak Forw ard Current (A)
4
dv/dt = 1000V/µs
Sinusoida l Pulse
20 joules per pulse
10
0.4
0.2
0.04
T = 125°C, V = 1760V
J
RR M
SD303C..S20C Series
tp
1E1 1E2 1E3 1E4
1
2
Pulse Basewidth (µs)
4
20 joule s per p ulse
10
0.4
0.2
Trapezoida l Pulse
dv/dt = 1000V/µs; di/dt=50A/µs
SD303C..S20C Series
T = 125°C, V = 1760V
J
RRM
tp
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Revision: 04-Aug-08 9
SD303C..C Series
Fast Recovery Diodes
(Hockey PUK Version), 350 A Vishay High Power Products
ORDERING INFORMATION TABLE
1- Diode
2- Essential part number
3- 3 = Fast recovery
4- C = Ceramic PUK
5- Voltage code x 100 = VRRM (see Voltage Ratings table)
6-t
rr code (see Recovery Characteristics table)
7- C = PUK case DO-200AA
Device code
51324
67
SD 30 3 C 25 S20 C
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95248
Document Number: 95248 For technical questions, contact: indmodules@vishay.com www.vishay.com
Revision: 06-Nov-07 1
DO-200AA
Outline Dimensions
Vishay Semiconductors
DIMENSIONS in millimeters (inches)
0.3 (0.01) MIN.
both ends
42 (1.65) DIA. MAX.
38 (1.50) DIA. MAX.
3.5 (0.14) ± 0.1 (0.004) DIA. NOM. x
1.8 (0.07) deep MIN. both ends
19 (0.75) DIA. MAX.
2 places
14.4 (0.57)
13.7 (0.54)
Quote between upper and lower pole pieces has to be considered after
application of mounting force (see Thermal and Mechanical Specifications)
Legal Disclaimer Notice
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Revision: 12-Mar-12 1Document Number: 91000
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